• Title/Summary/Keyword: Pumping device

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Waterhammer for the Intake Pumping Station with the Pump Control Valve (펌프제어밸브를 사용한 취수펌프장에서의 수격현상)

  • Kim, Kyung-Yup;Oh, Sang-Hyun
    • The KSFM Journal of Fluid Machinery
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    • v.4 no.4 s.13
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    • pp.16-21
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    • 2001
  • The field tests on the waterhammer were carried out for PalDang intake pumping station of the metropolitan water supply 5th stage project. The pumping station was equipped with the pump control valve as the main surge suppression device and the surge relief valve as auxiliary. However, the pump control valve had not been early controlled in the planned closing mode, and the slamming occurred to the valve which abruptly closed during the large reverse flow. Because the pressure wave caused by the pump failure was superposed on the slam surge, the upsurge increased so extremely that the shaft of the valve was damaged. It was desirable that the surge relief valve was installed in the pumping station or near the pump exit for the delay of response. After reforming the oil dashpot of the pump control valve, the sliming disappeared and the measured pressure was in fairly good agreement with the results of simulation. In case of three pumps for ${\phi}2,600$ pipeline being simultaneously tripped, the pressure head in the pumping station increased to 95.6 m, and the upsurge caused by the emergency stop of four pumps for ${\phi}2,800$ pipeline was 89.6m. We concluded that the pumping station acquired the safety and reliability for the pressure surge.

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Charge Pumping Measurements Optimized in Nonvolatile Polysilicon Thin-film Transistor Memory

  • Lee, Dong-Myeong;An, Ho-Myeong;Seo, Yu-Jeong;Kim, Hui-Dong;Song, Min-Yeong;Jo, Won-Ju;Kim, Tae-Geun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.331-331
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    • 2012
  • With the NAND Flash scaling down, it becomes more and more difficult to follow Moore's law to continue the scaling due to physical limitations. Recently, three-dimensional (3D) flash memories have introduced as an ideal solution for ultra-high-density data storage. In 3D flash memory, as the process reason, we need to use poly-Si TFTs instead of conventional transistors. So, after combining charge trap flash (CTF) structure and poly-Si TFTs, the emerging device SONOS-TFTs has also suffered from some reliability problem such as hot carrier degradation, charge-trapping-induced parasitic capacitance and resistance which both create interface traps. Charge pumping method is a useful tool to investigate the degradation phenomenon related to interface trap creation. However, the curves for charge pumping current in SONOS TFTs were far from ideal, which previously due to the fabrication process or some unknown traps. It needs an optimization and the important geometrical effect should be eliminated. In spite of its importance, it is still not deeply studied. In our work, base-level sweep model was applied in SONOS TFTs, and the nonideal charge pumping current was optimized by adjusting the gate pulse transition time. As a result, after the optimizing, an improved charge pumping current curve is obtained.

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Determination of Memory Trap Distribution in Charge Trap Type SONOSFET NVSM Cells Using Single Junction Charge Pumping Method (Single Junction Charge Pumping 방법을 이용한 전하 트랩형 SONOSFET NVSM 셀의 기억 트랩분포 결정)

  • 양전우;홍순혁;서광열
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.10
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    • pp.822-827
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    • 2000
  • The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor field effect transistor) NVSM (nonvolatile semiconductor memory) cell is investigated by single junction charge pumping method. The device was fabricated by 0.35㎛ standard logic fabrication process including the ONO stack dielectrics. The thickness of ONO dielectricis are 24$\AA$ for tunnel oxide, 74 $\AA$ for nitride and 25 $\AA$ for blocking oxide, respectively. By the use of single junction charge pumping method, the lateral profiles of both interface and memory traps can be calculated directly from experimental charge pumping results without complex numerical simulation. The interface traps were almost uniformly distributed over the whole channel region and its maximum value was 7.97$\times$10$\^$10/㎠. The memory traps were uniformly distributed in the nitride layer and its maximum value was 1.04$\times$10$\^$19/㎤. The degradation characteristics of SONOSFET with write/erase cycling also were investigated.

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Waterhammer for In-line Booster Pump (직결식 펌프의 수격현상)

  • Kim, Sang-Gyun;Lee, Gye-Bok;Kim, Kyung-Yup
    • The KSFM Journal of Fluid Machinery
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    • v.8 no.6 s.33
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    • pp.7-14
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    • 2005
  • The waterhammer occur when the pumps are started or stopped for the operation or tripped due to the power failure, and the hydraulic transients take place as a result of the sudden change in velocity. Several times, the field tests of the waterhammer were carried out for Pangyo booster pumping station. Pangyo pumping station was installed with the booster pumps of 6 sets and the in-line pumps of 2 sets. The in-line pumps are additionally needed to the surge suppression device so that the pumping station acquire the safety and reliability for the pressure surge.

Determination of Memory Trap Distribution in Charge Trap Type SONOSFET NVSM Cells Using Single Junction Charge Pumping Method (Single Junction Charge Pumping 방법을 이용한 전하 트랩 형 SONOSFET NVSM 셀의 기억 트랩 분포 결정)

  • 양전우;흥순혁;박희정;김선주;서광열
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.453-456
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    • 1999
  • The Si-SiO$_2$interface trap and nitride bulk trap distribution of SONOSFET(polysilicon-oxide-nitride-oxide-semiconductor)NVSM(nonvolatile semiconductor memory) cell were investigated by single charge pumping method. The used device was fabricated by 0.35 7m standard logic fabrication including the ONO cell process. This ONO dielectric thickness is tunnel oxide 24 $\AA$, nitride 74 $\AA$, blocking oxide 25 $\AA$, respectively. Keeping the pulse base level in accumulation and pulsing the surface into inversion with increasing amplitudes, the charge pumping current flow from the single junction. Using the obtained I$_{cp}$-V$_{h}$ curve, the local V$_{t}$ distribution, doping concentration, lateral interface trap distribution and lateral memory trap distribution were extracted. The maximum N$_{it}$($\chi$) of 1.62$\times$10$^{19}$ /cm$^2$were determined.mined.d.

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Numerical Study on the Waterhammer of PalDang Intake Pumping Station (팔당 취수펌프장의 수격현상에 관한 수치해석적 연구)

  • Kim, Kyung-Yup;Yu, Teak-In
    • The KSFM Journal of Fluid Machinery
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    • v.3 no.4 s.9
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    • pp.52-58
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    • 2000
  • The numerical study on the waterhammer was carried out for the intake pumping station of the metropolitan water supply 6th stage project. Because the waterhammer problems as a result of the pump power failure were the most important, these situations were carefully investigated. The surge tank and the stand pipes effectively protected the tunnels md the downstream region of pipeline from the pressure surge. In case the moment of inertia of the pump and motor was above $5080\;kg{\cdot}m^2$, the column separation did not occur in the pipeline between the pumping station and the inlet of 1st tunnel. As the moment of inertia increased, the pressure surges decreased in the pipeline conveying raw water. The pump control valve was chosen as the main surge suppression device for the intake pumping station. After power failure, the valve disc should be rapidly closed in 2.5 seconds and controlled the final closure to 15 seconds by the oil dashpot. If the slamming happened to the pump control valve, there was some danger of this system damaging. As the reverse flow through the valve increased, the upsurge extremely increased.

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Exploration of Water Pumping Station Digital Twin System Development Process According to Software Development Methodologies (소프트웨어 개발 방법론에 따른 양배수장 디지털 트윈 시스템 개발과정 고찰)

  • Lee, Byungjoon;Kim, Nanyoung;Yoon, Seongsoo
    • Journal of The Korean Society of Agricultural Engineers
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    • v.66 no.3
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    • pp.53-62
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    • 2024
  • The purpose of this study is to examine the methodology for applying digital twin technology to pumping station, identify the factors to be determined at each stage, and present its applicability. When analyzing the requirements for developing a digital twin for pumping station, they were categorized into service requirements, IoT device requirements, and gateway requirements, with a total of 39 requirements established. In system design, it was structured according to the principles of modularity, abstraction, stepwise decomposition, and information hiding, allowing the implementation of planned items for diagnosis and operational management. There are difficulties in setting communication-related protocols and applying them in the field due to the complexity of overseeing the entire system with data. Therefore, it is necessary to clarify the purpose of the system, and there are challenges in identifying the characteristics of individual facilities, such as pumps in pumping station, and fully incorporating them into the system process. Thus, the framework of the initial design is crucial for implementing a digital twin.

Numerical Analysis of the Flow Characteristics in the Nano Fountain-Pen Using Membrane Pumping (박막펌핑을 이용한 Nano Fountain-Pen의 유동 특성에 관한 수치적 연구)

  • Lee, J.H.;Lee, Y.K.;Lee, S.H.;Kim, Hun-Mo;Kim, Youn-J.
    • The KSFM Journal of Fluid Machinery
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    • v.9 no.2 s.35
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    • pp.19-24
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    • 2006
  • Nano fountain-pen is a novel device to make the constant patterning in micro process using new designed probe. Fountain-pen nanolithography (FPN) is applied for constant supply of liquid in conjunction of patterns and surface variation in the micro process. In this study, nuo fountain-pen is composed with reservoir, micro channels, tip and scondary chamber. Instead of traditional method only using capillary force, liquid can be definitely and exactly injected with membrane pumping by the repulse force of tip. It is dfficult to perform experiments in the micro range so that we carried out a numerical analysis for internal flow, using a commercial code, FlUENT, The velocity, pressure and flow rate are obtained under laminar, unsteady, three-dimensional incompressible flow with no-slip condition, and results are graphically described.

Design of the vacuum pumping system for the KSTAR NBI device (KSTAR 중성빔 입사(NBI) 장치 배기계통 설계)

  • 오병훈;인상렬;조용섭;김계령;최병호
    • Journal of the Korean Vacuum Society
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    • v.8 no.4B
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    • pp.548-555
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    • 1999
  • The NBI (Neutral BGeam Injection) System for the Korea Superconducting Tokamak Advanced Research (KSTAR) is composed of ion sources, neutralizers, bending magnets, ion dumps, and calorimeter. The vacuum chamber, in which all of the beam line components are enclosed, is composed of differential pumping system for the effective transfer of the neutral beams. The needed pumping speeds of each of the divided vacuum chamber and the optimized gas flow rate ot the neutralizer were calculated with the help of the particle balance equations. The minimum gas flow rate to the ion sources for producing needed beam current (120kV, 65A, 78MW), the pressure distributions in the vacuum chamber for minimizing re-ionization loss, and the beam loss rate on the beam line components were used as the input in the calculation. Also the scenario for short pulse operation was determined by analysing the time dependent equations. It showed that beam extraction during less than 0.5 sec could be made only with TMP.

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