• Journal of Adhesion and Interface
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• v.7 no.1
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• pp.23-29
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• 2006

Polymer thin films of pentafluorostyrene (PFS) were prepared by RF plasma (13.56 MHz) polymerization in continuous wave (CW) mode, as a function of plasma power and monomer pressure. Conditions for film preparation were optimized by measuring the solvent resistance of plasma polymer thin films in DMAc, NMP, THF, acetone and chloroform, as well as by evaluating the optical clarity via UV-VIS measurements. Pulsed mode plasma polymerization was also utilized to enhance the optical properties of the films by varying the period of on-time and duty cycle. Finally, the films were subjected to refractive index measurements and analyzed by ${\alpha}$-step, TGA and FT-IR.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• Journal of Information Display
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• v.11 no.1
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• pp.12-16
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• 2010

The effect of the crystallization and activated annealing of Si films using an excimer laser and the new CW blue laser are described and compared with furnace annealing for application in advanced TFTs and for future applications. Pulsed excimer laser annealing (ELA) is currently being used extensively as a low-temperature poly-silicon (LTPS) process on glass substrates as its efficiency is high in the ultra-violet (UV) region for thin Si films with thickness of 40-60 nm. ELA enables extremely low resistivity relating to high crystallinity for both the n- and p-type Si films. On the other hand, CW blue laser diode annealing (BLDA) enables the smooth Si surface to have arbitral crystal grains from micro-grains to an anisotropic huge grain structure only by controlling its power density. Both annealing techniques are expected to be applied in the future advanced TFT systems.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2000.11a
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• pp.748-751
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• 2000

Microlens made by laser radiation method have advantages in the easiness of their fabrication. The process is based on the projection of a chromium-on-quartz reticle on to the Polymer using a pulsed 248nm KrF excimer laser. Fabrication process is a fluence-dependent rate and density. The lens shape is defined by a rotationally symmetric sluence distribution with smooth radial variation in the image plane of the reticle. A typical lens of 50㎛ diameter was fabricated by irradiating 2000 laser pulses within 40 seconds. The experimental results show microlens fabrication by UV laser is possible and well worth studying further.

• Proceedings of the KIEE Conference
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• 2000.11c
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• pp.422-424
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Bulletin of the Korean Chemical Society
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• v.31 no.4
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• pp.798-802
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• 2010

From time-resolved optical emission spectra, we have investigated the effects of a transverse magnetic field on the expansion of a plasma plume produced by laser ablation of a ZnO:$P_2O_5$ ceramic target in oxygen active atmosphere. The emission spectra of $Zn^{+*}$, $P^{+*}$, and $Zn^*$ neutrals in the presence of magnetic field turn out to be considerably different from those without magnetic field. The characteristics of the deposited films grown on amorphous fused silica substrates by pulsed laser deposition (PLD) are examined by analyzing their photoluminescence (PL), X-ray diffraction (XRD), and UV-visible spectra.

• Journal of Sensor Science and Technology
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• v.22 no.5
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• pp.357-363
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• 2013

An ultraviolet pulsed laser ablation of polyimide film coated with platinum has been used to enhance the sensitivity for the application as an electrochemical biosensor. Densely packed cones are formed on polyimide surface after UV irradiation which results in increase of surface area. In order to apply the sensitivity improvement of laser ablated polyimide film electrodes, the glucose oxidase modified biosensor was fabricated by using an encapsulation in the gel matrix through sol-gel transition of tetraethoxysliane on the surface of laser ablated polyimide film. The optimum conditions for glucose determination have been characterized with respect to the applied potential and pH. The linear range and detection limit of glucose detection were from 2.0 mM to 18.0 mM and 0.18 mM, respectively. The sensitivity of glucose biosensors fabricated with laser ablated polyimide film is about three times higher than that of plain polyimide film due to increase in surface area by laser ablation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.317-318
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• 2007

In this study, transparent conducting oxide indium zinc oxide (IZO) thin films were deposited by pulsed laser deposition (PLD) Process as a function of the deposition time on the glass substrates at $400^{\circ}C$. The crystal structures, electrical and optical properties of IZO films analyzed by XRD, AFM, and UV spectrometer. High quality IZO thin film with the resistivity of $9.1{\times}10^{-4}$ ohm cm and optical transmittance over 85% was obtained for sample when deposition time was 15min. Thin films with the preferred orientations along the c axis were observed as the deposition time increased.

• Parasites, Hosts and Diseases
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• v.31 no.3
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• pp.277-284
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• 1993

Leishmaniasis is one of the important tropical diseases in the world. Although it is not prevalent In Korea, imported cases have been recorded. The karyotype of Leishmcnic sp. has been observed to be variable by localities or by strains, but the karyotype of a strain is known to be stable. This study was performed to observe if the karyotype of a Leishmonio sp. would be changed under some stressful conditions. The karyotype, analyzed by pulsed Held gradient gel electrophoresis, was not grossly changed by heat shock, chemotherapeutics, UV illumination, and gamma irradiation. Radiation destroyed the chromosomes mechanically but subcultured organisms after irradiation showed unaffected karyotype. The present findings suggest that the karyotype of a Leishmnnia strain is so stable that it is not altered by temporary stimulation with heat, drugs, and radiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.355-356
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• 2008

In this work, ZnO films doped with different contents of Indium (0.1at.%, 0.3at.%, 0.6at.%, respectively) were deposited on Si (111) substrate that has 1~20 $\Omega$cm by pulsed laser deposition (PLD) at $600^{\circ}C$ for 30min. The thickness of the films are about 250 nm. The structural, optical and electrical properties of the films were investigated using X-ray Diffraction (XRD), Atomic force microscope (AFM), Photoluminescence (PL) and Hall measurement. It has been found that RMS of the films is decreased and grain size is increased with increasing the contents of doped Indium. The results of the Photoluminescence properties were indicated that the films have UV emission about 380nm and shows a little red shitf with increasing contents of doped indium. The result of the Hall measurement shows that the concentration and resisitivity in doped ZnO are as changing as one order, respectively ${\sim}10^{18}/cm^2$, ${\sim}10^{-2}cm{\Omega}cm$.