• Journal of Powder Materials
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• v.23 no.1
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• pp.1-7
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• 2016

Cu-Mn compacts are fabricated by the pulsed current activated sintering method (PCAS) for sputtering target application. For fabricating the compacts, optimized sintering conditions such as the temperature, pulse ratio, pressure, and heating rate are controlled during the sintering process. The final sintering temperature and heating rate required to fabricate the target materials having high density are $700^{\circ}C$ and $80^{\circ}C/min$, respectively. The heating directly progresses up to $700^{\circ}C$ with a 3 min holding time. The sputtering target materials having high relative density of 100% are fabricated by employing a uniaxial pressure of 60 MPa and a sintering temperature of $700^{\circ}C$ without any significant change in the grain size. Also, the shrinkage displacement of the Cu-Mn target materials considerably increases with an increase in the pressure at sintering temperatures up to $700^{\circ}C$.

• Korean Journal of Materials Research
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• v.20 no.1
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• pp.47-50
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• 2010

Various thicknesses of Al-doped ZnO (AZO) films were deposited on glass substrate using pulsed dc magnetron sputtering with a cylindrical target designed for large-area high-speed deposition. The structural, electrical, and optical properties of the films of various thicknesses were characterized. All deposited AZO films have (0002) preferred orientation with the c-axis perpendicular to the substrate. Crystal quality and surface morphology of the films changed according to the film thickness. The samples with higher surface roughness exhibited lower Hall mobility. Analysis of the measured data of the optical band gap and the carrier concentration revealed that there were no changes for all the film thicknesses. The optical transmittances were more than 85% regardless of film thickness within the visible wavelength region. The lowest resistivity, $4.13\times10^{-4}\Omega{\cdot}cm^{-1}$ was found in 750 nm films with an electron mobility $(\mu)$ of $10.6 cm^2V^{-1} s^{-1}$ and a carrier concentration (n) of $1.42\times10^{21} cm^{-3}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Journal of the Korean institute of surface engineering
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• v.36 no.4
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• pp.296-300
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• 2003

Extended cylindrical magnetron sputtering system with rotating 600-mm long and 90-mm diameter graphite cathode and pulsed power supply voltage generator were developed and fabricated. Time-dependent Langmuir probe characteristics as well as carbon films thickness were measured. It was shown that ratio of ions flux to carbon atoms flux for pulsed magnetron discharge mode was equal to $\Phi_{i}$ $\Phi$sub C/ = 0.2. It did not depend on the discharge current in the range of $I_{d}$ / = 10∼60 A since both the plasma density and the film deposition rate were found approximately proportional to the discharge current. In spite of this fact carbon film structure was found to be strongly dependent on the discharge current. Grain size increased from 100 nm at $I_{d}$ = 10∼20 A to 500 nm at $I_{d}$ = 40∼60 A. To deposit fine-grained hard nanocrystalline or amorphous carbon coating current regime with $I_{d}$ = 20 A was chosen. Pulsed negative bias voltage ($\tau$= 40 ${\mu}\textrm{s}$, $U_{b}$ = 0∼10 ㎸) synchronized with magnetron discharge pulses was applied to a substrate and voltage of $U_{b}$ = 3.4 ㎸ was shown to be optimum for a hard carbon film deposition. Lower voltages were not sufficient for amorphization of a growing graphite film, while higher voltages led to excessive ion bombardment and effects of recrystalization and graphitization.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.430-430
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• 2012

Modulated pulsed power (MPP) 스퍼터링은 펄스 전압 shape, amplitude, duration의 modulation을 통해 증착율 손실을 극복하는 고출력 펄스 마그네트론 스퍼터링의 한 종류이다. Micro second 범위에서 on/off 시간을 다중 세트 형태로 자유롭게 프로그램 할 수 있어서 아킹 없이 고전류 영역의 마그네트론 동작을 할 수 있으므로, 고주파 유도 결합 플라즈마원이나 마이크로웨이브 투입 등의 부가적인 플라즈마 없이도 스퍼터링 재료의 이온화 정도를 획기적으로 높일 수 있는 장점을 가지고 있다. 본 연구에서는 $2{\times}1{\times}0.2$의 sputtering system에서 기판 캐리어를 이용해서 $400{\times}400mm$ 기판을 $272{\times}500mm$ 크기의 AZO target (Al 2 wt%)이 설치되어 있는 moving magnet cathode (MMC)을 이용하여 MPP로 증착했다. 두 종류의 micro pulse set을 하나의 macro pulse에 사용함으로서 weakly ionized plasma와 strongly ionized plasma를 만들 수 있다. 다양한 micro pulse set을 이용하여 평균 전력 2 kW에서 peak 전력을 4 kW에서 45 kW까지 상승 시킬 수 있으며, 이 때 타겟-기판 거리 80 mm에서 이온전류밀도는 $5mA/cm^2$에서 $20mA/cm^2$까지 상승했다. MPP는 같은 평균 전력에서 repetition frequency가 증가할 때, 증착 속도가 증가했으며, 같은 repetition frequency에서 macro pulse length가 증가할 때도, 증착 속도가 증가했다. 최적화된 marco, micro pulse set에서 증착 속도는 평균 전력 2 kW에서 110 nm/min이었고, 700 nm의 박막에서 비저항은 $1-2{\times}10^{-3}ohm{\cdot}cm$였다. 표면거칠기 Rrms는 약 3 nm였고, 400-700 nm 영역의 평균 투과도는 72-76%였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.92-92
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• 2011

IZTO and ITO thin films with a thickness of 200nm were deposited on Corning glass substrate to investigate the effects of substrate temperature on their electrical and optical properties by using pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90 wt.%, SnO2 10 wt.%). We investigated the structural, electrical, and optical properties of IZTO and ITO films. The structural and electrical properties of both films are sensitive on the substrate temperature. As the substrate temperature is increased, the electrical resistivity of ITO films is improved, but that of IZTO film increase over than $100^{\circ}C$. All IZTO and ITO thin films have good optical properties, which showed an average of transmittance over 80%. As a result, IZTO films can be a possible material for flexible display due to the low processing temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.93-93
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• 2011

The Indium Zinc Tin Oxide (IZTO) and Indium Tin Oxide (ITO) thin films are grown on PI substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt.%, ZnO 15 wt.%, SnO2 15 wt.%) and ITO (In2O3 90wt.%, SnO2 10wt.%). The structural, electrical, and optical properties are investigated. The IZTO thin films deposited at low temperature showed relatively low electrical resistivity compared to ITO thin films deposited at low temperature. As a result, we could prepare the IZTO thin films with the resistivity as low as $5.6{\times}10^{-4}({\Omega}{\cdot}m)$. Both of the films deposited on PI substrate showed an average transmittance over 80% in visible range (400.800nm). Overall, IZTO thin film is a promising candidate as an alternative TCO material to ITO in flexible and OLED devices.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.148-154
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• 2003

Short ($\tau$=40 $mutextrm{s}$) and high-voltage ($U_{sub}$=2~8 kV) negative substrate bias pulses were used to assist pulsed magnetron sputtering DLC films deposition. Space- and time-resolved probe measurements of the plasma characteristics have been performed. It was shown that in case of high-voltage substrate bias spatial non-uniformity of the magnetron discharge plasma density greatly affected DLC deposition process. By Raman spectroscopy it was found that maximum percentage of s $p^3$-bonded carbon atoms (40 ~ 50%) in the coating was attained at energy $E_{c}$ ~700 eV per deposited carbon atom. Despite rather low diamond-like phase content these coatings are characterized by good adhesion due to ion mixing promoted by high acceleration voltage. Short duration of the bias pulses is also important to prevent electric breakdowns of insulating DLC film during its growth.wth.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.901-904
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• 2001

For the c-axis oriented epitaxial YBa$_2$Cu$_3$O$_{7-{\delta}}$ thin film on r-cut sapphire substrate it is necessary to deposit buffer layers. The CeO$_2$buffer layer was deposited on sapphire substrate using RF magnetron sputtering system. We investigated XRD pattern of CeO$_2$thin films at various sputtering conditions such as sputtering gas ratio, sputtering power, target to substrate distance, sputtering pressure and substrate temperature. The optimum condition was 15 mTorr with deposition pressure, 1:1.2 with $O_2$and Ar ratio and 9cm with target to substrate distance. The CeO$_2$(200) peak was notable for a deposition temperature above 75$0^{\circ}C$. The YBa$_2$Cu$_3$O$_{7-{\delta}}$ was deposited on CeO$_2$buffered r-cut sapphire substrate using pulsed laser ablation. The YBa$_2$Cu$_3$O$_{7-{\delta}}$CeO$_2$(200)/A1$_2$O$_3$thin film was exhibited a critical temperature of 89K.xhibited a critical temperature of 89K.