• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.319-319
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• 2013

Even though the fabrication methods of metal oxide based thin film capacitor have been well established such as RF sputtering, Sol-gel, metal organic chemical vapor deposition (MOCVD), ion beam assisted deposition (IBAD) and pulsed laser deposition (PLD), an applicable capacitor of printed circuit board (PCB) has not realized yet by these methods. Barium Strontium Titanate (BST) and other high-k ceramic oxides are important materials used in integrated passive devices, multi-chip modules (MCM), high-density interconnect, and chip-scale packaging. Thin film multi-layer technology is strongly demanded for having high capacitance (120 nF/$mm^2$). In this study, we suggest novel multi-layer thin film capacitor design and fabrication technology utilized by plasma assisted deposition and photolithography processes. Ba0.6Sr0.4TiO3 (BST) was used for the dielectric material since it has high dielectric constant and low dielectric loss. 5-layered BST and Pt thin films with multi-layer sandwich structures were formed on Pt/Ti/$SiO_2$/Si substrate by RF-magnetron sputtering and DC-sputtering. Pt electrodes and BST layers were patterned to reveal internal electrodes by photolithography. SiO2 passivation layer was deposited by plasma-enhanced chemical vapor deposition (PE-CVD). The passivation layer plays an important role to prevent short connection between the electrodes. It was patterned to create holes for the connection between internal electrodes and external electrodes by reactive-ion etching (RIE). External contact pads were formed by Pt electrodes. The microstructure and dielectric characteristics of the capacitors were investigated by scanning electron microscopy (SEM) and impedance analyzer, respectively. In conclusion, the 0402 sized thin film multi-layer capacitors have been demonstrated, which have capacitance of 10 nF. They are expected to be used for decoupling purpose and have been fabricated with high yield.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.1-4
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• 2004

Three group samples with difference thickness of $CeO_2$ capping layer deposited by PLD were studied. Among them, one group $CeO_2$ films were deposited on stainless steel tape coated with IBAD- YSZ and $CeO_2$ buffer layer ($CeO_2$/IBAD-YSZ/SS); other two groups of $CeO_2 YSZ Y_2O_3$multi-layer were deposited on NiW substrates for fabrication of YBCO coated conductor through RABiTS approach. The pulsed laser deposition (PLD) and DC magnetron sputtering were employed to deposit these buffer layers. On the top of buffer layer, YBCO film was deposited by PLD. The effect of thickness of $CeO_2$ film on the texture of $CeO_2$ film and critical current density ($J_c$) of YBCO film were analyzed. For the case $CeO_2$ on $CeO_2$/IBAD-YSZ/SS, there was a self-epitaxy effect with the increase of $CeO_2$ film. For $YSZ/Y_2O_3$ NiW which was deposited by PLD or DC magnetron sputtering, there is not self-epitaxy effect. However, the capping layer of $CeO_2$ film deposited by PLD improved the quality of buffer layer for $YSZ/Y_2O_3$ which was deposited by DC magnetron sputtering, therefore increased the $J_c$ of YBCO film.

• 전기학회논문지
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• 제56권10호
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• pp.1782-1785
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• 2007

In this paper, the effect of substrate temperature on structural, electrical and optical properties of aluminium-doped zinc oxide (AZO) films were investigated. AZO thin films were prepared on glass substrate by pulsed DC magnetron sputtering technique. The properties of AZO were measured by using XRD, AFM, UV spectrophotometer, and hall effect measurement system. The resistivity of AZO films was improved under the condition of high substrate temperature. The resistivity decreased from $9.95{\times}10^{-2}\;{\Omega}-cm\;to\;1.1{\times}10^{-3}\;{\Omega}-cm$ as a result of high substrate temperature and the average transmittances in visible range were above 80%.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.158-158
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• 2009

TiN 코팅은 뛰어난 기계적 성질 및 내식성으로 산업전반에 걸쳐 널리 이용되고 있다. 본 연구에서는 비대칭 바이폴라 펄스 DC 반응성 마그네트론 장비를 이용하여 바이어스전압, 펄스주파수 및 Duty를 변화시키면서 TiN 박막을 제작하였다. 위와 같은 3가지 플라즈마 변수의 변화에 따른 TiN 박막의 결정 배향성 및 미세구조에 미치는 영향에 대해 주목하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.183-183
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• 2011

리튬 이온 배터리의 cathode 및 electrolyte 재료로 사용되는 LiCoO2을 sputtering이나 pulsed laser deposition을 이용하여 박막으로 증착하기 위해서는 target이 필요하다. Target은 원료 분말을 가압 성형한 후 고온에서 소결하여 제조된다. LiCoO2 target 제조과정에서 고밀도를 얻기 힘들고 Li 성분의 증발이 일어난다. 또한 Li2O 분말은 흡습성이 매우 크다. 본 연구에서는 시간과 온도를 조절하여 최적화된 소결 과정을 통해 target의 밀도가 이론밀도와 근사한 값을 갖도록 하고, LiCoO2 또는 Co3O4 분말에 각각 흡습성이 낮은 Li2CO3 분말을 첨가하여 Li 성분을 조절하였다. Li과 Co의 조성비가 1:1-2:1인 고밀도의 LiCoO2 target을 제조하여 박막 증착 후 Li과 Co의 조성비가 1:1이 되도록 하였다.

• 한국표면공학회지
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• 제37권4호
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• pp.191-195
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• 2004

Gallium or sulphur additions in $CuInSe_2$ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.346-347
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• 2007

Aluminum nitride (AlN) thin films were deposited on Polycrystalline (poly) 3C-SiC buffer layers using pulsed reactive magnetron sputtering. Characteristics of AlN films were investigated experimentally by means of FE-SEM, X-ray diffraction, and FT-IR, respectively. As a result, highly (002) oriented AlN thin films with almost free residual stress were achieved using 3C-SiC buffer layers. Therefore, AlN thin films grown on 3C-SiC buffer layers can be used for various piezoelectric fields and M/NEMS applications.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.211.1-211.1
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• 2013

We fabricate the conductive zinc oxide(ZnO) thin film using UV-enhanced atomic layer deposition. ZnO is semiconductor with a wide band gap(3.37eV) and transparent in the visible region. ZnO can be deposited with various method, such as metal organic chemical vapour deposition, magnetron sputtering and pulsed laser ablation deposition. In this experiment, ZnO thin films was deposited by atomic layer deposition using diethylzinc (DEZ) and D.I water as precursors with UV irradiation during water dosing. As a function of UV exposure time, the resistivity of ZnO thin films decreased dramatically. We were able to confirm that UV irradiation is one of the effective way to improve conductivity of ZnO thin film. The resistivity was investigated by 4 point probe. Additionally, we confirm the thin film composition is ZnO by X-ray photoelectron spectroscopy. We anticipate that this UV-enhanced ZnO thin film can be applied to electronics or photonic devices as transparent electrode.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.