Journal of the Korean institute of surface engineering (한국표면공학회지)

The Korean Institute of Surface Engineering (한국표면공학회)
권호 표지

Effect of Ga, S Additions in CuInSe$_2$ for Solar Cell Applications

  • Kim, Kyoo-Ho (School of Metallurgical and Materials Engineering, Yeungnam University)
  • Published : 2004.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Gallium or sulphur additions in $CuInSe_2$ were prepared using RF magnetron sputtering and pulsed laser deposition respectively. All of the observed thin films shows a chalcopyrite structure with the S and Ga addition increases the favourable (112) peak. The optical absorption coefficients were slightly decreased. The energy band gap of films could be shifted from 1.04 to 1.68 eV by adjusting the mole ratio of S/(S+Se) and Ga/(In+Ga). It is possible to obtain the optimum energy band gap by adding S or Ga solute at a certain ratio in favour of Se and In respectively. It is also necessary to control the ratio of Ga and S additions and to retain a certain portion of In and Se to provide better properties of thin films.

Keywords

References

  1. M. A. Contreras et al., Sol. En. Mat. and Sol. Cel., 41-42 (1996) 231-246 https://doi.org/10.1016/0927-0248(95)00145-X
  2. J. M. Stewart et al., Proc. ICTMC-7 ed. by S.K. Deb and A. Zunger, (1987)
  3. T. Dullweber et al., Thin Solid Films, 361-362 (2000) 478-481 https://doi.org/10.1016/S0040-6090(99)00845-7
  4. T. Yamaguchi et al., J. Appl. Phys., 69 (1991) 7714 https://doi.org/10.1063/1.347545
  5. G. B. Dubrovski, Sov. Phys Solid State, 3 (1961) 943
  6. H. W. Schock et al., J. Appl. Phys., 76 (1994) 2904 https://doi.org/10.1063/1.357528
  7. T. Walter et al., Thin Solid Films, 224 (1993) 74 https://doi.org/10.1016/0040-6090(93)90461-W
  8. C. A. D. Rincon et al., Mat. Chem. and Phys., 70 (2001) 300-304 https://doi.org/10.1016/S0254-0584(00)00518-6
  9. K. Mitchell et aI., IEEE Trans. on Electron Devices, 37 (1990) 410 https://doi.org/10.1109/16.46375