• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.48 no.12
• /
• pp.54-61
• /
• 2011

We propose a surveillance-alert system based on optimal placements of PDR(Pulsed Doppler Radar) sensors in USN. By using the detection information of moving target from PDR sensor and by considering the covered detection region and geographical property of the strategic area, three optimal placements of sensors are proposed. The proposed placement are named as the grid type, the linear type and the zigzag type. Also, the surveillance alert system based on three sensor placements are developed. The alert level of the proposed surveillance-alert system are 'Perception', 'Caution', 'Warning' and 'Danger' which are decided by the distance change between the moving targets and the command post. The performace of the developed system is verified via outdoor experiments.

• Journal of the Institute of Electronics Engineers of Korea SC
• /
• v.40 no.5
• /
• pp.333-340
• /
• 2003

Doppler processing is the heart of pulsed Doppler radar. It gives a clutter elimination and coherent integration. With the improvement of digital signal processors (DPSs), the implementation using them is more widely used in radar systems. Generally, so as for Doppler processor to process the input data in real time, a parallel processing concept using multiple DSPs should be used. This paper implements a programmable Doppler processor, which consists of MTI filter, DFB and square-law detector, using 8 ADSP21060s. Formulating the distribution time of the input data, the transfer time of the output data and the time required to compute each algorithm, it estimates total processing time and the number of required DSP. Finally, using the TSG that provides radar control pulses and simulated target signals, performances of the implemented Doppler processor are evaluated.

• Proceedings of the KIEE Conference
• /
• 2009.07a
• /
• pp.1370_1372
• /
• 2009

A conventional linear accelerator system requires a flat-topped pulse with less than $\pm$ 0.5% ripple to meet the beam energy spread requirements and to improve pulse efficiency of RF systems. A a line-type pulsed modulator is widely used in pulsed power circuits for applications such as accelerators, radar, medical radiation, or ionization systems. The high-voltage pulse generator system with an output voltage of 284 kV, a pulse width of $10{\mu}s$, and a rise time of $0.84{\mu}s$ has been designed and fabricated to drive a klystron which has 30-MW peak and 60-kW average RF output power. The high-voltage test was performed using the klystron load. This thesis describes the design and test results of high-power pulse generator system for industrial accelerator application. The experimental results were analyzed and compared with the design.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.27 no.1
• /
• pp.76-79
• /
• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.10 no.6
• /
• pp.889-899
• /
• 1999

A technique to obtain an exact frequency characteristics of desired targets in radar measurements is presented. The pulsing network composed of two RF switches was installed between the Network Analyzer and the antenna, and the backscattering from a metal sphere was measured at X-band. It is shown that the pulsing effectively eliminated undesired returns from antenna and other circuitry of the systems. The antenna return was suppressed by more than 60 dB, and the signal-to-noise ratio was improved drastically. The pulsed frequency data were processed to extract the responses of the desired target. The result agrees well with the theoretical backscattering characteristics of the sphere. The methods presented here are applicable to RCS measurements in compact ranges, and also to the backscattering measurements of distributed targets outdoors.

• Proceedings of the KAIS Fall Conference
• /
• 2010.11a
• /
• pp.168-171
• /
• 2010

본 논문에서는 GaN HEMT 소자를 이용한 고출력 고효율 특성을 가지는 광대역 SSPA의 개발을 다루고 있다. 개발한 SSPA는 8W 급과 15W 급의 GaN HEMT 소자를 사용하여 Pre-Drive 증폭단을 구성하였으며, Drive 증폭단은 50W/150W급 GaN HEMT 소자를 직/병렬구조로 사용하였다. Main 증폭단은 4-way 분배기와 결합기를 이용한 Balanced Structure를 적용하여 높은 출력을 구현하였으며, 안정적인 동작을 위하여 음(-)전원 제어 회로와 출력신호 검출 회로를 포함하고 있다. 제작된 SSPA의 사용가능 대역은 2.9GHz~3.3GHz로 단일전원을 사용하고 있으며 100us 펄스 폭, 10% Duty Cycle 조건에서 60dB의 전압이득, 1kW 출력과 약 28% 효율 특성을 가지는 것으로 측정되었다. 본 논문에서 개발한 SSPA는 S-대역을 사용하는 레이더시스템의 송신단에 적용될 수 있다.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
• /
• v.23 no.9
• /
• pp.1079-1086
• /
• 2012

In this paper, X-band 60 W Solid-State Power Amplifier with sequential control circuit and pulse width variation circuit for improve bias of SSPA module was designed. The sequential control circuit operate in regular sequence drain bias switching of GaAs FET. The distortion and efficiency of output signals due to SSPA nonlinear degradation is increased by making operate in regular sequence the drain bias wider than that of RF input signals pulse width if only input signal using pulsed width variation. The GaAs FETs are used for the 60 W SSPA module which is consists of 3-stage modules, pre-amplifier stage, driver-amplifier stage and main-power amplifier stage. The main power amplifier stage is implemented with the power combiner, as a balanced amplifier structure, to obtain the power greater than 60 W. The designed SSPA modules has 50 dB gain, pulse period 1 msec, pulse width 100 us, 10 % duty cycle and 60 watts output power in the frequency range of 9.2~9.6 GHz and it can be applied to solid-state pulse compression radar using pulse SSPA.

• Journal of IKEEE
• /
• v.26 no.4
• /
• pp.537-544
• /
• 2022

This paper analyzes the occurrence and cause of bond wires fusing used in the manufacture of pulsed high power amplifiers. Recently GaN HEMT has been spotlight in the fields of electronic warfare, radar, base station and satellite communication. In order to produce the maximum output power, which is the main performance of the high-power amplifier, optimal impedance matching is required. And the material, diameter and number of bond wires must be determined in consideration of not only the rated current but also the heat generated by the transient current. In particular, it was confirmed that compound semiconductor with a wide energy band gap such as GaN trigger fusing of the bond wire due to an increase in thermal resistance when the design efficiency is low or the heat dissipation is insufficient. This data has been simulated for exothermic conditions, and it is expected to be used as a reference for applications using GaN devices as verified through IR microscope.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2022.05a
• /
• pp.101-103
• /
• 2022

CCTV is mainly used as a real-time detection system for critical facilities. In the case of CCTV, although the accuracy is high, the viewing angle is narrow, so it is used in combination with a sensor such as a radar. LiDAR is a technology that acquires distance information by detecting the time it takes to reflect off an object using a high-power pulsed laser. In the case of lidar, there is a problem in that the utilization is not high in terms of cost and technology due to the limitation of the number of simultaneous processing sensors in the server due to the data throughput. The detection method by the optical mesh sensor is also vulnerable to strong winds and extreme cold, and there is a problem of maintenance due to damage to animals. In this paper, by using the 1550nm wavelength band instead of the 905nm wavelength band used in the existing lidar sensor, the effect on the weather environment is strong and we propose to develop a system that can integrate and control multiple sensors.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.22 no.6
• /
• pp.149-154
• /
• 2022

Due to high power capabilities and high linearity of GaN devices, GaN Low-Noise Amplifiers (LNAs) without a limiter can be implemented in order to improve noise figure and reduce chip area in radar receivers. In this paper, a GaN LNA is presented for Ka-band radar receivers. The designed LNA was realized in a 150-nm GaN HEMT process and measurement results show that the voltage gain of >23 dB and the noise figure of <6.5 dB including packaging loss in the target frequency range. Under the high-power stress test, measured gain and noise figure of the GaN LNA is degraded after the first stress test, but no more degradation is observed under multiple stress tests. Through post-stress noise and s-parameter measurements, we verified that the GaN LNA is resilient to pulsed input power of ~40 dBm.