• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.77-78
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• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• 한국세라믹학회지
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• 제31권3호
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• pp.312-320
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• 1994

Effect of the laser shot number on the particulates density of the pulsed laser deposited YBa2Cu3O7-x thin films and the laser irradiated surface morphology of the YBa2Cu3O7-x bulk target have been investigated. Until 100 laser shots of cumulative irradiation, the films has the particulates density of ~103 mm-2. However, after 100 laser shots, the density was increased more than 10 times. This results has been explained by the change of particulate ejection path with the development of conical structure at the target surface.

• 한국세라믹학회지
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• 제41권8호
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• pp.593-598
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• 2004

1 $\mu$m이하의 전고상 리튬 박막전지의 구현을 위해 펄스 레이저 증착법을 이용하여 Pt/TiO$_2$/SiO$_2$/Si 기판위에 LiCoO$_2$정극을 증착온도와 Li/Co 간의 몰 비율을 변화시켜가며 성장시켰다. 특히, Li/Co=1.2의 조성을 갖는 LiCoO$_2$를 50$0^{\circ}C$의 증착온도에서 성장시킬 경우 53 $\mu$Ah/$cm^2$-$\mu$m의 높은 초기 용량값을 가지며 100 싸이클 후에도 67.6%의 용량값을 유지하였다. LiCoO$_2$/Pt/TiO$_2$/SiO$_2$/Si위에 고체 전해질인 (Li, La)TiO$_3$를 비정질상으로 하여 PLD방법으로 낮은 온도대역에서 증착온도를 다양하게 하여 증착하였다. 10$0^{\circ}C$의 증착온도에서 LiCoO$_2$Pt/TiO$_2$/SiO$_2$/Si위에 성장시킨 (Li, La)TiO를 가지고 LiClO$_4$ in PC 안에서 Li anode와 충$.$방전 측정 결과 약 51$\mu$Ah/$cm^2$-$\mu$m의 초기 용량값을 나타내었으며 100싸이클 후에도 90%의 훌륭한 방전용량의 보존력을 나타내었다. 비정질상의 (Li, La)TiO$_3$ 고체 전해질은 전고상 박막전지로의 구현이 가능하다.

• 센서학회지
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• 제15권2호
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• pp.84-89
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• 2006

Highly concentrated p-type ZnO thin films can be obtained by doping of N, P and As elements. In this study, undoped ZnO buffer layers were prepared on a (0001) sapphire substrate by a ultra high vaccum pulsed laser deposition(UHV-PLD) method. ZnO buffer layers were deposited with various deposition temperature($400{\sim}700^{\circ}C$) at 350 mtorr of oxygen working pressure. Arsenic doped(1 wt%) ZnO thin films were deposited on the ZnO buffer layers by UHV-PLD. Crystallinity of the samples were evaluated by X-ray diffractometer and scanning electron microscopy. Optical, electrical properties of the ZnO thin films were estimated by photoluminescence(PL) and Hall measurements. The optimal condition of the undoped ZnO buffer layer for the deposition of As-doped ZnO thin films was at $600^{\circ}C$ of deposition temperature.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• 한국세라믹학회지
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• 제50권6호
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• pp.551-556
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• 2013

AlN films with c-axis orientation and thermal conductivity characteristics were deposited by using Pulsed Laser Deposition and the films were characterized by changing the deposition conditions. In particular, we investigated the optimal conditions for the application of a heat sinking plane AlN thin film. Epitaxial AlN films were deposited on sapphire ($c-Al_2O_3$) single crystals by pulsed laser deposition (PLD) with an AlN target. AlN films were deposited at a fixed pressure of $2{\times}10^{-5}$ Torr, while the substrate temperature was varied from 500 to $700^{\circ}C$. According to the experimental results of the growth temperature of the thin film, AlN thin films were confirmed with a highly c-axis orientation, maximum grain size, and high thermal conductivity at $650^{\circ}C$. The thermal conductivity of the AlN thin film was found to increase compared to bulk AlN near the band gap value of 6.2 eV.

• 한국초전도ㆍ저온공학회논문지
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• 제20권4호
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• pp.41-45
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• 2018

We have investigated the effect of $Y_2O_3$ nanoparticles on the pinning properties of $Y_2O_3$-doped $GdBa_2Cu_3O_{7-{\delta}}$ (GdBCO) films. Both undoped and $Y_2O_3$-doped GdBCO films were grown on $CeO_2$-buffered MgO (100) single crystal substrates by pulsed laser deposition (PLD) using KrF (${\lambda}=248nm$) laser. The $Y_2O_3$ doping contents were controlled up to ~ 2.5 area% by varying the internal angles of $Y_2O_3$ sectors put on the top surface of GdBCO target. Compared with the $Gd_2O_3$-doped GdBCO films previously reported by our group [1], the $Y_2O_3$-doped GdBCO films exhibited less severe critical temperature ($T_c$) drop and thus slightly enhanced critical current densities ($J_c$) and pinning force densities ($F_p$) at 65 K for the applied field parallel to the c-axis of the GdBCO matrix (B//c) with increasing the doping content. Below 40 K, the in-field $J_c$ and $F_p$ values of all $Y_2O_3$-doped GdBCO films exhibited higher than those of undoped GdBCO film, suggesting that $Y_2O_3$ inclusions might act as effective pinning centers.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.115-119
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• 1999

Ba$_2Cu_3O_{7-{\delta}}$ (YBCO) thin films were deposited by pulsed laser deposition using differently prepared targets: One was a conventionally solid-state sintered (SSS) target and the other was a modified melt-textured grown (MTC) target. Compared with SSS targets, MTG targets showed a well-connected microstructure consisting of much larger grains and the surface was Bess roughened with the cumulative laser incidence. YBCO films deposited from MTC targets showed a denser and smoother surface of the basal film than the case of SSS targets. The investigations of ${\alpha}$-axis outgrowths in the films indicated that the deposition using MTG targets would result in a more homogeneous and stable film growth as compared to the SSS targets. Also, TEM analysis revealed that the film deposited from MTG targets had a less granular microstructure that would reduce weak-link effects in the film.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.207-207
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• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.41-42
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• 2005

The characteristics of ZnO films are reported depending on different deposition conditions for film bulk acoustic resonators (FBARs). The ZnO films have been deposited on Al films evaporated on p-type (100) silicon substrate by pulsed laser deposition (PLD) technique using a Nd:YAG laser. These films exhibit an electrical resistivity higher than $10^7$ $\Omega$m. X-ray diffraction measurements have shown that ZnO films are highly c-axis oriented with full width at half maximum (FWHM) below $0.5^{\circ}$. These results show the possibility of FBAR devices using by PLD.