• Title/Summary/Keyword: Pulsed Current

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A Study on Characteristic of the 14/50/50 PLZT Thin Film for DRAM Capacitor (고집적 DRAM소자용 14/50/50 PLZT 박막의 특성에 관한 연구)

  • 박용범;장낙원;백동수;마석범;최형욱;박창엽
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.118-121
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    • 1999
  • PLZT thin films were fabricated with different energy density by pulsed laser deposition. PLZT films deposited on Pt/Ti/SiO$_2$/Sr substrate. This PLZT thin films of 5000$\AA$ thickness were crystallized at $600^{\circ}C$, 200mTorr $O_2$ pressure for 2 J/$\textrm{cm}^2$ laser energy density. 14/50/50 PLZT thin film showed a maximum dielectric constant value of $\varepsilon$$_{r}$=1289.9 P-E hysteresis loop of 14/ 50/50 PLZT thin film was slim ferroelectric. Leakage current density of 14/50/50 PLZT thin film was 10/ sup -7/=A/$\textrm{cm}^2$.>.

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Magnetic Characterization of the Nd Based Permanent Magnet by Newly-Developed Bipolar Pulse-Type Hysteresis Loop Tracer

  • Rhee, J.R.
    • Journal of Magnetics
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    • v.4 no.3
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    • pp.73-75
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    • 1999
  • By appliying an slternate pulsed magnetic field -generated by using a sequential ignition circuit and a magnet exciting circuit- with peak value of about 10 T to the rod type Nd based magnet Nd2Fe12.7Cr1.3B with length of 5 mm and diameter of 3.6 mm, the basic magnetic properties such as saturation magnetization, residual magnetization, coercivity, maximum energy products, magnetic anisotropy and anisotropic field are investigated with obtaining the major and minor J-H loops of the magnet. The increase in coercivity due to eddy currents in ac measurement of coercivity is calculated considering eddy current loss by analyzing a wave of generating magnetic field. The average coercivity calculated for the magnet is about 12.2 kOe, anisotropy magnetic field and anisotropic constant are measured as 60 kOe 2.43 Mj/$m^3$, respectively.

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A Study of Mili-wave Pulse Accelerating For High Power Electron Beam (대 전력 전자빔 가속용 밀리파 펄스 연구)

  • Kim, Won-Sop;Kim, Jeong-Man;Kim, Yeong-Min
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1554-1555
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    • 2006
  • We have studied the backward wave oscillator, a power pulsed generator oscillator at 20 GHz has higher frequency then current one. An absolute instability linear analysis was used for the purpose of designing the slow wave structure. A large diameter of the slow wave structure was adopted to prevent the breakdown brought about by the increase of power density.

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Sputtering of Magnesium Oxide this film for Plasma Display Panel Application (PDP용 MgO 박막의 스퍼터 연구)

  • Choi, Young-Wook;Kim, Jee-Hyun
    • Proceedings of the KIEE Conference
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    • 2003.07c
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    • pp.1732-1734
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    • 2003
  • An MgO thin film sputtering system for the PDP (Plasma Display Panel) applications has been developed. This system was manufactured with a vertical In-Line type of 42 inch, which has the length of 520 mm and the width of 900 mm. A reactive magnetron discharge for this sputtering was generated using an unipolar pulsed power supply which has functions of constant voltage (Max. 500 V) and current (Max. 15 A) control, frequency of $10{\sim}100$ kHz and duty ratio of $10{\sim}60$ %. The experiment was conducted under various conditions : $3{\sim}10$ mTorr of pressure, the ratio of $O_2$/Ar = $0.1{\sim}0.5$, 50 % of duty and power of $0.5{\sim}1.7$ kW. From the experiment, the deposition rate of a static state and a moving state were measured to be about 45 nm/min and 6 nm m/min at the distance of 50 mm between the target and the substrate, respectively.

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Highly-Efficient Optical Gating in Vanadium Dioxide Junction Device

  • Lee, Yong-Wook
    • Journal of Sensor Science and Technology
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    • v.20 no.4
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    • pp.230-233
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    • 2011
  • In this paper, highly-efficient optical gating in a junction device based on vanadium dioxide($VO_2$) thin film grown by a sol-gel method was investigated as a gate terminal of a three-terminal device using infrared light with a wavelength of ~1554.6 nm. Due to the photoinduced phase transition, the threshold voltage of the $VO_2$ junction device, at which the device current abruptly jumps, could be tuned with a sensitivity of ~96.5 V/W by adjusting the optical power of the infrared light directly illuminating the device. Compared with the tuning efficiency of the previous device fabricated using $VO_2$ thin film deposited by a pulsed laser deposition method, the threshold voltage of this device could be tuned by ~76.8 % at an illumination power of ~39.8 mW resulting in a tuning efficiency of ~1.930 %/mW, which is ~4.9 times larger than the previous device.

Development of $Al_2O_3-Ni$ FGMs Produced by Spark Plasma Sintering

  • Casari, Francesco;Zadra, Mario;Girardini, Luca;Molinari, Alberto
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.87-88
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    • 2006
  • Ceramic-Metal Functionally Graded Materials (FGM) are of great interest for application as Thermal Barrier Coating (TBC) or Wear Resistant Coating (WRC). Spark Plasma Sintering (SPS) is a promising techniques for time-saving consolidation of laminated/graduated powder systems: SPS is a pressure-assisted electrical sintering method which directly applies a pulsed DC current as heat source. In the present work, production of $Al_2O_3-Ni$ FGMs by means of Spark Plasma Sintering is considered; effect of sintering condition on density, hardness and fracture toughness is studied. Problems correlated to this new processing technology are discussed.

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Fabrication of Nano-laminar Glass Composite Using Thin Flake

  • Kakisawa, Hideki;Minagawa, Kazumi;Halada, Kohmei
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.330-331
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    • 2006
  • Fabrication of a nano-laminar ceramic composite by sintering thin ceramic plates was examined. Silver-coated glass flakes with a thickness of less than $1{\mu}m$ were consolidated by pulsed current sintering or hotpressing to obtain model composites. The samples sintered at the optimum conditions were fairly dense, and the flakes were aligned by uniaxial press. The metal coating remained on the flakes through the sintering process, and became an interface layer between the flakes. No crack propagation through the transverse direction of the lamellar was observed in the indentation test. The possibilities of high resistance against crack propagation was suggested.

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Effect of grain size of Pb(La,Ti)O$_3$thin films grown by pulsed laser deposition for memory device application (메모리 소자 응용을 위한 펄스 레이저 증착법으로 제작된 PLT박막의 열처리 효과 연구)

  • 허창회;심경석;이상렬
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.861-864
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    • 2000
  • Ferroelectric thin film capacitors with high dielectric constant are important for the application of memory devices. In this work, thin films of PLT(28)(Pb$\sub$0.72/La$\sub$0.28/Ti$\sub$0.93/O$_3$) were fabricated on Pt/Ti/SiO$_2$/Si substrates in-situ annealing and ex-situ annealing have been compared depending on the annealing time. We have systematically investigated the variation of grain sizes depending on the condition of post-annealing and the variation of deposition rate. C-V measurement, ferroelectric properties, leakage current and SEM were performed to investigate the electrical properties and the microstructural properties of Pb(La,Ti)O$_3$.

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Hydrogen Annealing effect on the dielectric properties of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ thin film

  • Lee, Eun-Sun;Chung, Hyun-Woo;Lim, Sung-Hoon;Lee, Sang-Yeol
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.41-43
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    • 2004
  • Dielectric thin films of $(Pb_{0.72}La_{0.28})Ti_{0.93}O_3$ were deposited on $Pt(111)/Ti/SiO_2/Si$ substrates in situ by pulsed laser deposition(PLD) and annealed with different gases which are forming gas and oxygen gas, respectively. The diffusion of hydrogen into the ferroelectric film was caused by annealing process and resulted in the destruction of polarization. The dielectric properties of forming gas annealed PLT thin films, which are dielectric constant, ferroelectric characteristic, and leakage current characteristics, were degraded

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Temperature Analysis of the De-icing System for Overhead Contact Wire (전차선로 해빙시스템의 온도특성)

  • Ko, Byeong-Hun;Park, Young;Jung, Ho-Sung;Kwon, Sam-Young;Park, Hyun-June
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.11
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    • pp.1004-1008
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    • 2007
  • The ice coats are built on 25 kV overhead contact wire when the temperature is lower than $0^{\circ}C$. It generates shockwaves at the mechanical interface of the collecting strips of the pantograph and the contact wire. The de-icing processes should be performed to avoid shockwaves which are generated by a pulsed high-voltage arc discharge. This paper presents temperature analysis of the de-icing effects which could be applied to the overhead contact wire of railways using Joule heat. The results show that 350 A is the proper current for $0^{\circ}C$ conductor according to environmental condition such as velocity of air stream, ambient temperature and moisture.