• 제목/요약/키워드: Pulse Mode

검색결과 753건 처리시간 0.023초

전자 밀도 분포 측정을 위한 극단 펄스 레플렉토메터리 (Ultrashort Pulse Reflectometry for the Measurement of Electron Density Profiles)

  • 노영수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권1호
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    • pp.8-14
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    • 2004
  • An O-mode Ultrashort Pulse Reflectometry (USPR) system has been designed and developed for the measurement of electron density profiles on the Sustained Spheromak Physics Experiment (SSPX) spheromak. In the original design of SSPX, peak densities were envisioned to be in the range of 0.5-3${\times}$10$^{14}$ cm$^{-3}$ . The total duration of formation and sustained discharges is typically ∼2 msec. Moreover, diagnostic access on SSPX is severely restricted. Such high density and short duration plasmas coupled with stringent diagnostic access are quite challenging for conventional reflectometer systems. In USPR, the SSPX diagnostic requirements have been successfully satisfied by employing up-converting mixers and monostatic horn/waveguide configuration. As a result, the USPR system has proven its applicability for the density measurement of a future fusion device. In the density profile measurements, the USPR system is capable of routinely generating density profiles with a temporal resolution of 57 $\mu$s. This paper presents details regarding the USPR fundamental principles, associated subsystems and laboratory tests as well as the experimental results obtained on SSPX

Zero-Voltage-Transition Pulse-Width-Modulation Boost 컨버터의 전달 특성 (Transfer Characteristics of the Zero- VoltageTransition Pulse-Width - Modulation Boost Converter)

  • 김진성;박석하;김양모
    • 전자공학회논문지B
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    • 제33B권10호
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    • pp.148-156
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    • 1996
  • Increasing the switching frquency is essential to achieve the high density of switched mode power supplies, but this leads to the increase of switching losses. A number of new soft switching converters have been presented ot reduce switching losses, but most of them may have some demerits, such as the increase of voltage/current stresses and high conduction losses. To overcome these problems, the ZVT-PWM converter has recently been presented. in this paper, the operation characteristics of the ZVT-PWM boost converter is analyzed, and the steady-states (DC) and small-signal model of this converter are derived and analyzed, and then the transfer functions of this converter are derived. The transfer functions of ZVT-PWM boost converter are similar to those of the conventional PWM boost converter, but the transfer characteristics are affecsted by te duty ratio and the switching frequency.

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전류형 인버터를 이용한 계통 연계형 태양광 발전 시스템에 관한 연구 (Study on Grid-Connected Photovoltaic System using Current-Source Inverter)

  • 임정민;박성준;이상훈;문채주;최준호
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2005년도 전력전자학술대회 논문집
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    • pp.677-681
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    • 2005
  • This Paper presents a 6 pulse shift operation control mode of current-source-inverter to make improvement of efficiency and to reduce the frequency of inverter switching for photovoltaic generation system using PWM current-source-inverter. This system is connected solar cell energy directly without using a storage cell. The proposed circuit can maintain maximum voltage of photovoltaic generation of take advantage of six Buck-Boost converter and a full-bridge inverter determines the polarity of AC output. That is controlled by using digital signal processor TMS320F2812 for operation about a 6 pulse shift operation control of current-source-inverter, and it is verified through the experimental results.

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Analysis, Design, and Implementation of a High-Performance Rectifier

  • Wang, Chien-Ming;Tao, Chin-Wang;Lai, Yu-Hao
    • Journal of Power Electronics
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    • 제16권3호
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    • pp.905-914
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    • 2016
  • A high-performance rectifier is introduced in this study. The proposed rectifier combines the conventional pulse width modulation, soft commutation, and instantaneously average line current control techniques to promote circuit performance. The voltage stresses of the main switches in the rectifier are lower than those in conventional rectifier topologies. Moreover, conduction losses of switches in the rectifier are certainly lower than those in conventional rectifier topologies because the power current flow path when the main switches are turned on includes two main power semiconductors and the power current flow path when the main switches are turned off includes one main power semiconductor. The rectifier also adopts a ZCS-PWM auxiliary circuit to derive the ZCS function for power semiconductors. Thus, the problem of switching losses and EMI can be improved. In the control strategy, the controller uses the average current control mode to achieve fixed-frequency current control with stability and low distortion. A prototype has been implemented in the laboratory to verify circuit theory.

Fabrication of Plasma Electrolytic Oxidation Coatings on Magnesium AZ91D Casting Alloys

  • Lee, Sung-Hyung;Yashiro, Hitoshi;Kure-Chu, Song-Zhu
    • 한국표면공학회지
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    • 제50권6호
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    • pp.432-438
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    • 2017
  • AZ91D casting alloy requires an advanced plasma anodizing processing because large amount of defects are liable to generate during anodization. In this study, plasma electrolytic oxidation (PEO) of AZ91D Mg alloy was conducted by the application of either constant voltage or current using a pulse mode and its effects on pore formation, surface roughness and corrosion resistance were investigated. The PEO films showed a three-layer structure. The PEO film thickness was found to increase linearly with voltage. The surface roughness, Ra, ranged between $0.2{\mu}m$ and $0.3{\mu}m$. The corrosion resistance increased from RN 3.5 to 9.5 by the PEO treatment when evaluated according to the 72 hour salt spray test. The PEO-treated surface exhibited higher pitting potential than the raw material.

1.57 BRAIN MRI검사에서의 작동제어모드를 통한 두부 SAR측정과 변화인자에 관한 고찰 (Implementation about measurement of the head SAR and variable parameter according to operation control mode in brain MR study with 1.5Tesia)

  • 이규수;심현;문지훈;오재철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2007년도 심포지엄 논문집 정보 및 제어부문
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    • pp.58-60
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    • 2007
  • Magnetic Resonance Imaging(MRI) has become a very widely used medical procedur e. Clo.sed and open systems are typically used with static magnetic fields at or below 2 Tesla. BWhole body SAR(specific absorbsion rate) is the value of SAR averaged over the entire body of the patient over any period of 15 minutes. Head SAR is the value of SAR averaged over the head of the patient for any period of 10 minutes. SAR is a measure of the absorption of electromagnetic energy in the body' (typically in watts per kilogram (W/kg)). The normal operating mode comprises values of head SAR not higher than 3 W/kg. The second level controlled operating mode comprises values higher than 3 W/kg. Current FDA guidance limits the SAR in the whole body. including the head to a range of 1.5 to 4.0 W/kg, depending on the patient's clinical condition. SAR, limit restrictions are incorporated in all MRI systems. and domestic' s guidance limits the SAR in a part body. including the head to 3.2w/kg and less. The purpose of this study is to evaluate on change of head SAR in using MRI pulse sequence and to check if exceed 3.2(w/kg) level in domestic a part exposure through measured head SAR. 23 patient's the average head SAR of pulse sequence is that T2WI sagittal is 0.5375. T2WI axial(FSE) is 0.4817, T1WI axial(SE) is, 0.8179. FLAIR axial is 0.4580. GRE axial is 0.0077, Diffusion is 0.0824w/kg. The head SAR exposed per patient was proved 2.3845w/kg less than the international standard. Coefficient of correlation for the relations body weight and SAR or for the relations ETL(echo train length) and SAR is 1 value. Coefficient of correlation for the relations between TR(time to repeat) and SAR is -0.602 value. so SAR increased relative to weight body and ETL. But the relations between TR and SAR is negative definite.

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GaN HEMT를 이용한 스위칭 모드 전력증폭기 설계 및 전력증폭기의 Ruggedness 특성 분석 (The Design of Switching-Mode Power Amplifier and Ruggedness Characteristics Analysis of Power Amplifier Using GaN HEMT)

  • 최길웅;이복형;김형주;김상훈;최진주;김동환;김선주
    • 한국전자파학회논문지
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    • 제24권4호
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    • pp.394-402
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    • 2013
  • 본 논문은 GaN(Gallium Nitride) HEMT(High Electron Mobility Transistor)를 이용한 S대역 레이더용 전력증폭기 설계하고 제작된 스위칭 모드 전력증폭기의 ruggedness 시험에 관련된 내용을 기술하였다. 고효율 특성을 위해 전력증폭기를 Class-F로 설계하였으며, 측정을 위한 입력 신호는 $100{\mu}s$의 pulse width 및 10 %의 duty cycle인 pulse 신호를 사용하였다. 제작된 Class-F 전력증폭기의 중심 주파수에서 측정한 결과, 8.7 dB의 전력 이득과 42 dBm의 출력 전력, 54.2 %의 전력 부가 효율(PAE) 및 62.6 %의 드레인 효율이 측정되었다. 또한, 전력증폭기의 신뢰성 시험의 일환으로 Ruggedness 시험을 위한 실험 구성을 제안하고, VSWR(Voltage Standing Wave Ratio)을 변화시켜 출력 전력과 효율을 측정하였다. 설계된 전력증폭기가 VSWR 변화에 따라 출력 전력 32.6~41.1 dBm까지 변화하고, 드레인 효율은 23.4~63 %까지 변하는 특성을 얻을 수 있었다.

Effects of Panel Temperature on the Discharge Characteristics of Micro Discharge Cells

  • Shim, Kyung-Ryeol;Park, Chung-Hoo;Lee, Ho-Jun
    • KIEE International Transactions on Electrophysics and Applications
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    • 제4C권5호
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    • pp.215-219
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    • 2004
  • The effects of ambient temperature on the discharge characteristics of Ne-Xe based micro discharge cells for ac-PDP (plasma display panel) have been studied. In ramp voltage driving, which is generally used as a reset method of PDP, two dissimilar modes of strong and weak discharge were found. As the interval between the former sustaining discharge and ramp voltage discharge becomes greater, the probability of a strong discharge increases. This suggests that a sufficient number of priming particles is necessary for initiating weak mode (Townsend discharge). It was discovered that under higher ambient temperatures, weak discharge occurs more frequently. The discharge time lag observed in square pulse driving of single cells becomes surprisingly smaller under higher ambient temperatures for the constant gas number density condition.

Plasma Display Panel용 산화마그네슘 박막의 산화영역에서의 스퍼터 성막기술 (A sputtering technique of magnesium oxide thin film in oxide mode for plasma display panel)

  • 최영욱;김지현
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 하계학술대회 논문집 C
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    • pp.1874-1875
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    • 2004
  • A high rate deposition sputtering process of magnesium oxide thin film in oxide mode has been developed using a 20 kW unipolar pulsed power supply. The powersupply was operated at a maximum constant voltage of 500 V and a constant current of 40 A. The pulse repetition rate and the duty were changed in the ranges of 10 ${\sim}$ 50 kHz and 10 ${\sim}$ 60 %, respectively. The deposition rate increased with increasing incident power to the target. Maximum incident power to the magnesium target was obtained by the control of frequency, duty and current. The deposition rate of a moving state was 9 nm m/min at the average power of 1.5 kW. This technique is proposed to apply high through-put sputtering system for plasma display panel.

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반도체 광증폭기 루프 거울을 포함한 8자형 레이저를 이용한 10Gb/s RZ 신호의 전광 클럭 추출 (All optical clock recovery from 10 Gb/s RZ signal using an actively mode-locked figure eight laser incorporating a SLALOM)

  • 정희상;주무정;김광준;이종현
    • 한국광학회지
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    • 제11권6호
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    • pp.400-404
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    • 2000
  • 능동 모드 잠김 8자형 레이저를 이용하여 10Gb/s RZ 신호로부터 클럭을 추출하고 이 클럭 성분의 품질을 평가하였다. 10ps의 펄스폭을 갖는 광원을 $2^{23}-1$ PRBS로 외부 변조하였으며 이를 클럭 추출회로에 인가함으로써 12ps의 펄스폭을 갖는 클럭을 얻었다. 이렇게 얻어진 펄스를 다시 같은 외부 변조기에 입력하여 BER을 측정한 결과 $10_{11}$의 BER에서 패널티가 거의 나타나지 않았다.

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