• Journal of the Korean Electrochemical Society
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• v.11 no.2
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• pp.109-114
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• 2008

Though ethanol can theoretically generate 12 electrons during oxidation to carbon dioxide, the complete oxidation of ethanol is hard to achieve due to the strong bond between the two carbons in its molecular structure. Therefore, development of high activity catalyst for ethanol oxidation is necessary for the commercialization of direct ethanol fuel cell. In this study, some binary and ternary electrocatalysts of PtSn/C and PtSnAu/C have been synthesized and characterized. The catalysts were fabricated with modified polyol method with the amounts of 20 wt%, where the Pt : Sn ratios in the PtSn/C were 1 : 0, 4 : 1, 3 : 1, 2 : 1, 1.5 : 1, 1 : 1, 1 : 1.5 and Pt:Sn:Au ratios in the PtSnAu/C were 5 : 5 : 0, 5 : 4 : 1, 5 : 3 : 2, 5 : 2 : 3. From the XRD and TEM analysis results, the catalysts were found to have face centered cubic structure with particle size of around $1.9{\sim}2.4\;nm$. The activity in the ethanol oxidation was examined with cyclic voltammetry and the results indicated that PtSn(1.5 : 1)/C and PtSnAu(5 : 2 : 3)/C had the highest activity in each catalyst system. Further tests with single cell were performed with those catalysts. It was found that PtSn/C(1.5 : 1) exhibited the best performance while the long term stability of PtSnAu/C(5 : 2 : 3) is better than PtSn/C(1.5 : 1).

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.117-123
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• 1992

$Pt-SnO_{2-x}$ thin film sensing devices has been fabricated by thermal oxidation of stacked Pt-Sn thin film on the heater. The thickness of Sn thin film deposited by thermal evaporation was $4000{\AA}$ and the thickness of Pt deposited by D. C. sputtering on Sn thin film was $14{\sim}71{\AA}$ range. The XRD analysis show that the $Pt-SnO_{2-x}$ thin films are formed by grains with a diameter of about $200{\AA}$ randomly connected and the crystalline phase of the thin films are preferentally oriented in the (110) direction. $Pt-SnO_{2-x}$ thin film device (Pt thickness : $43{\AA}$) to 6000 ppm CO shows the sensitivity of 80% and high selectivity to CO. And the operating temperature and the thermal oxidation temperature of $Pt-SnO_{2-x}$ thin film device with high sensitivity to CO were $200^{\circ}C$ and $500^{\circ}C$, respectively.

• Journal of Electrochemical Science and Technology
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• v.6 no.3
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• pp.95-105
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• 2015

In the present work, Carbon supported Pt₁₀₀, Pt₈₀Sn₂₀, Pt₈₀Ni₂₀ and Pt₈₀Sn₁₀Ni₁₀ electrocatalysts with different atomic ratios were prepared by ethylene glycol-reduction method to study the electro-oxidation of ethanol in membraneless fuel cell. The electrocatalysts were characterized in terms of structure, morphology and composition by using XRD, TEM and EDX techniques. Transmission electron microscopy measurements revealed a decrease in the mean particle size of the catalysts for the ternary compositions. The electrocatalytic activities of Pt₁₀₀/C, Pt₈₀Sn₂₀/C, Pt₈₀Ni₂₀/C and Pt₈₀Sn₁₀Ni₁₀/C catalysts for ethanol oxidation in an acid medium were investigated by cyclic voltammetry (CV) and chronoamperometry (CA). The electrochemical results showed that addition of Ni to Pt/C and Pt-Sn/C catalysts significantly shifted the onset of ethanol and CO oxidations toward lower potentials. The single membraneless ethanol fuel cell performances of the Pt₈₀Sn₁₀Ni₁₀/C, Pt₈₀Sn₂₀/C and Pt₈₀Ni₂₀/C anode catalysts were evaluated at room temperature. Among the catalysts investigated, the power density obtained for Pt₈₀Sn₁₀Ni₁₀/C (37.77 mW/cm² ) catalyst was higher than that of Pt₈₀Sn₂₀/C (22.89 mW/cm² ) and Pt₈₀Ni₂₀/C (16.77 mW/ cm² ), using 1.0 M ethanol + 0.5 M H₂SO₄ as anode feed and 0.1 M sodium percarbonate + 0.5 M H₂SO₄ as cathode feed.

• Journal of the Korean Ceramic Society
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• v.27 no.5
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• pp.638-644
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• 1990

The C3H8 gas sensitivities of SnO2, Pd-SnO2, Pt-SnO2 gas sensor are looked over with the impregnation method of PdCl2, H2PtCl6 solution on SnO2. The Cl- ion due to incomplete decomposition of PdCl2 at 80$0^{\circ}C$ for 30 min decrease the C3H8 gas sensitivity of SnO2, and the sensitivity is increased by the impreganation of H2PtCl6 solution on SnO2 because of its lower decomposition temperature compared with PdCl2. The C3H8 gas sensitivities of Pd-SnO2, Pt-SnO2 impregnated slightly after 1st sintering are larger than that of pure SnO2 sensor because very small amount of Cl- ion exist in sample due to smaller amount of impregnaiton.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.23-30
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• 2004

Interfacial reaction of Pb-free $Sn0.7wt{\%}Cu$ and $Sn3.8wt{\%}Ag0.7wt{\%}Cu$ solders and Pt during aging has been investigated. After the $Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens were reflowed at $250^{\circ}C$ for 30s and the $Sn0.7wt{\%}Cu/Pt$ specimens were reflowed at $260^{\circ}C$, the specimens were aged at $125^{\circ}C,\;150^{\circ}C$ and $170^{\circ}C$ for 25-121 hours. The intermetallic thitkness and morphology change during aging were characterized using SEM, EDS and XRD. $PtSn_4$ and $PtSn_2$ were observed in the solder/pt interface and the intermetallic formation was governed by diffusion. The activation energy of intermetallic formation was 145.3 kJ/mol for$Sn3.8wt{\%}Ag0.7wt{\%}Cu/Pt$ specimens for $Sn0.7wt{\%}Cu/Pt$ specimens from the measurement of the intermetallic thickness with aging temperature and time.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.5 no.1
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• pp.83-86
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• 2004

A high temperature tolerant microelectronic-based carbon monioxde(CO) gas sensor has been developed. The gas sensing performance has been studied over a wide temperature range$(100-300^\circ{C)}$. The gas sensitivity of the sensor is high, its initial sensing behavior is very fast, and the sensor is reproducible. Pt-SiC and $Pt-SnO_2-SiC$ diodes are fabricated using standard semiconductor processes and their CO gas-sensing behaviors are analyzed as a function of CO gas concentration and temperature by I-V and $\Delta{I-t}$ methods under steady-state and transient conditions. The sensitivity of the device with $Pt-SnO_2$ catalytic gate is higher than that of the Pt gate. The experimental results indicate that $SnO_2$ layer improves the catalytic reaction of the Pt layer.

• Journal of the Korean Ceramic Society
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• v.37 no.12
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• pp.1135-1139
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• 2000

본 연구에서는 Pt/Sn $O_2$박막의 CO 감지특성을 향상시키기 위하여 표면 형상을 제어하였다. Pt/Sn $O_2$계 박막센서의 최적 동작온도는 175$^{\circ}C$이었다. Pt가 12초 동안 증착된 Sn $O_2$가 200ppm의 CO 가스에 대하여 1.23의 최대감도를 나타내었고, 그 이상의 Pt 증착시간 증가에 따라 Sn $O_2$위의 Pt의 coverage가 증가하여 센서의 감도를 감소시켰다. 다층박막(multi-layer thin film)의 단층의 Pt/Sn $O_2$복합체 위에 다시 Sn $O_2$및 Pt의 cluster 층들을 연속적으로 증착함으로서 제작되었다. 단지 하나의 Pt 층만을 증착한 Sn $O_2$막보다 다층의 Pt/Sn $O_2$막이 더욱 우수한 감도( $R_{air}$/ $R_{co}$=1.72, CO: 200 ppm)를 나타내었다. Pt/Sn $O_2$다층박막의 우수한 감도의 원인은 Pt와 Sn $O_2$사이의 계면적 증대 때문인 것으로 생각되어 진다.다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.7 no.2
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• pp.276-283
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• 1997

A dry impregnation method was used for preparing pellet type Pt/$SnO_2$ gas sensor. The crystal structure, direction of the crystal, crystal size and microstructure between the catalyst and the support ($SnO_2$) were characterized with electron diffraction analysis, transmission electron microscopy, scanning electron microscopy. The characterization indicates that when Pt/$SnO_2$ sample is calcined at $400^{\circ}C$, the Cl content associated with the Pt phase diminishes and the part of Pt is moved into $SnO_2$ support. This results in the enhancement of gas sensitivity. After the reactor with a Pt/$SnO_2$ sample was run with a flow rate of 30 sccm (a mixture of 0.5% $H_2$ in $_N2$) for a while, the resistance of $SnO_2$ was saturated, but the $SnO_2$ kept absorbing $H_2$ gas. This indicates that the surface state was saturated. For the 14 ppm $H_2$ gas, the sensitivity of Pt/$SnO_2$ devices was about 81% at an operating temperature of $300^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.805-808
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• 2002

A carbon monoxide gas sensor utilizing Pt-SiC, Pt-SnO2-SiC diode structure was fabricated. Since the operating temperature for silicon devices in limited to 200oC, sensor which employ the silicon substrate can not at high temperature. In this study, CO gas sensor operating at high temperature which utilize SiC semiconductor as a substrate was developed. Since the SiC is the semiconductor with wide band gap. the sensor at above $700^{\circ}C$. Carbon monoxide-sensing behavior of Pt-SiC, Pt-SnO2-SiC diode is systematically compared and analyzed as a function of carbon monoxide concentration and temperature by I-V and ${\Delta}$I-t method under steady-state and transient conditions.

• Journal of Magnetics
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• v.14 no.1
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• pp.7-10
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• 2009

In this work, we studied the effects of Sn addition on the ordering temperature of FePt thin film. The coercivity of FePtSn film was about 1000 Oe greater than the coercivity of FePt film for an annealing temperature of $600^{\circ}C$. Therefore, Sn addition was effective in promoting the $L1_0$ ordering and in reducing the ordering temperature of the FePt film. From our X-ray diffraction results, we found that in the as-deposited film, the addition of Sn induced a lattice expansion in disordered FePt thin films. After the annealing process, the excess Sn diffuses out from the ordered FePt thin film because of the difference in the solid solubility of Sn between the disordered and ordered phases. The existence of precipitates of Sn from the FePt lattice was deduced by Curie temperature measurements of the FePt and FePtSn films. Therefore, the key role played by the addition of Sn to the FePt film can be explained by a reduction in the activation energy for the $L1_0$ order-disorder transformation of FePt which originates from the high internal stress in the disordered phase induced by the supersaturated Sn atoms.