• Title/Summary/Keyword: Pt film

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Fatigue Characteristics of PZT Thin Films Deposited by ECR-PECVD

  • Chung, Su-Ock;Lee, Won-Jong
    • Transactions on Electrical and Electronic Materials
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    • v.6 no.4
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    • pp.177-185
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    • 2005
  • Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

Novel Application of Platinum Ink for Counter Electrode Preparation in Dye Sensitized Solar Cells

  • Kim, Sang Hern;Park, Chang Woo
    • Bulletin of the Korean Chemical Society
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    • v.34 no.3
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    • pp.831-836
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    • 2013
  • Platinized counter electrode is common in most of the dye sensitized solar cell (DSSC) researches because of its high catalytic activity and corrosion stability against iodine in the electrolyte. Platinum (Pt) film coating on fluorine doped tin oxide (FTO) glass surface by using alcoholic solution of hexachloroplatinic acid ($H_2PtCl_6$), paste containing Pt precursors or sputtering are widely used techniques. This paper presents a novel application of Pt ink containing nanoparticles for making platinized counter electrode for DSSC. The characteristics of Pt films coated on FTO glass surface by different chemical methods were compared along with the performance parameters of the DSSCs made by using the films as counter electrodes. The samples coated with Pt inks were sintered at $300^{\circ}C$ for 30 minutes whereas Pt-film and Pt-paste were sintered at $400^{\circ}C$ for 30 minutes. The Pt ink diluted in n-hexane was found to a promising candidate for the preparation of platinized counter electrode. The ink may also be applicable for DSSC on flexible substrates after optimization its sintering temperature.

Deposition of Electrolyte for Intermediate Temperature Solid Oxide Fuel Cells by Combined Thin Film Deposition Techniques (복합 박막 증착 공정을 이용한 중저온 고체산화물 연료전지용 전해질 증착)

  • Ha, Seungbum;Jee, Sanghoon;Tanveer, Waqas Hassan;Lee, Yoonho;Cha, Suk Won
    • 한국신재생에너지학회:학술대회논문집
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    • 2011.11a
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    • pp.84.1-84.1
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    • 2011
  • Typical solid oxide fuel cells (SOFCs) have limited applications because they operate at high temperature due to low ionic conductivity of electrolyte. Thin film solid oxide fuel cell with yttria stabilized zirconia (YSZ) electrolyte is developed to decrease operating temperature. Pt/YSZ/Pt thin film SOFC was fabricated on anodic aluminum oxide (AAO). The crystalline structure of YSZ electrolyte by sputter is heavily depends on the roughness of porous Pt layer, which results in pinholes. To deposit YSZ electrolyte without pinholes and electrical shortage, it is necessary to deposit smoother and denser layer between Pt anode layer and YSZ layer by sputter. Atomic Layer Deposition (ALD) technique is used to deposit pre-YSZ layer, and it improved electrolyte quality. 300nm thick Bi-layered YSZ electrolyte was successfully deposited without electrical shortage.

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Fabrication of SnOx/Pt Thin Film Gas Sensors and Their Sensing Characteristics (SnOx/Pt 薄膜 가스感知素子의 製造 및 그 感知特性)

  • Lee, Sung-Pil;Chung, Wan-Young;Lee, Duk-Dong;Sohn, Byung-Ki
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1315-1322
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    • 1988
  • $SnO_X$/Pt thin film gas sensors were fabricated and their performance characteristics were measured. The $SnO_X$/Pt films were deposited by vacuum evaporating the $SnO_2$ target mixed with 2 wt% Pt. The conductivity showed the temperature dependence and the sensitivity to CO gas was proportional to the square root of gas concentration below 2000 ppm. The optimum operating temperature of the fabricated devices was about 300$^{\circ}$C and the response time in 5000 ppm CO gas was about 20 sec.

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Magnetic Properties and the Order-disorder Phase Transformation of (Fe1-XCoX) Pt Magnetic Thin Films

  • Na, K.H.;Park, C.H.;Na, J.G.;Jang, P.W.;Kim, C.S.;Lee, S.R.
    • Journal of Magnetics
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    • v.4 no.4
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    • pp.119-122
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    • 1999
  • Magnetic properties and crystal structures of (Fe1-XCoX) Pt (X = 0, 0.2, 0.4, 0.5, 0.6, 0.8 and 1.0) ternary thin films were investigated. The order-disorder phase transformation of FePt thin films during annealing was also studied by x-ray diffraction and M ssbauer spectroscopy. The magnetic thin films were deposited on glass substrates using a dc sputtering method and were subsequently annealed at 400~$700^{\circ}C$ in a high vacuum. The as-deposited films exhibited a high degree of the <111> preferred orientation and the preferred orientation was not destroyed even after the subsequent post annealing. The coercivity of the ($Fe_xCo_{1-x}$) Pt thin films annealed at $700^{\circ}C$ showed a minimum value at the equiatomic composition of the Fe and Co atoms. The ordered structure of the FePt alloy was thought to have formed from the disordered structure by an inhomogeneous process, which was confirmed by the asymmetric peak shapes and M ssbauer spectra.

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Electrodeposition of AuPt Alloy Nanostructures on a Biotemplate with Hierarchically Assembled M13 Virus Film Used for Methanol Oxidation Reaction

  • Manivannan, Shanmugam;Seo, Yeji;Kim, Kyuwon
    • Journal of Electrochemical Science and Technology
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    • v.10 no.3
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    • pp.284-293
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    • 2019
  • Herein, we report an electrode surface with a hierarchical assembly of wild-type M13 virus nanofibers (M13) to nucleate the AuPt alloy nanostructures by electrodeposition. M13 was pulled on the electrode surface to produce a virus film, and then a layer of sol-gel matrix (SSG) was wrapped over the surface to protect the film, thereby a bio-template was constructed. Blending of metal binding domains of M13 and amine groups of the SSG of the bio-template were effectively nucleate and directed the growth of nanostructures (NSs) such as Au, Pt and AuPt alloy onto the modified electrode surface by electrodeposition. An electrocatalytic activity of the modified electrode toward methanol oxidation in alkaline medium was investigated and found an enhanced mass activity ($534mA/mg_{Pt}$) relative to its controlled experiments. This bio-templated growth of NSs with precise composition could expedite the intention of new alloy materials with tuneable properties and will have efficacy in green energy, catalytic, and energy storage applications.

Analysis of Magnetic Isotropy Property using Magnetoresistance Curve of CoFe/Cu/CoFe/PtMn Multilayer Film (CoFe/Cu/CoFe/PtMn 다층박막의 자기저항 곡선을 이용한 자기 등방성 특성 분석)

  • Choi, Jong-Gu;Kim, Su-Hee;Choi, Sang-Heon;Lee, Sang-Suk;Rhee, Jang-Roh
    • Journal of the Korean Magnetics Society
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    • v.27 no.4
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    • pp.123-128
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    • 2017
  • The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field ($H_{ex}$), coercivity ($H_c$), and MR ratio of Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/Ta(4 nm) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/Ta(4 nm) SV multilayer film showed $H_{ex}=2Oe$, $H_c=316Oe$, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 nm)/CoFe(6 nm)/Cu(2.5 nm)/CoFe(3 nm)/PtMn(6 nm)/CoFe(3 nm)/Cu(2.5 nm)/CoFe(6 nm)/Ta(4 nm) SV multilayer film showed $H_c=37.5Oe$ and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of $H_{ex}$ and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.

Study on Pt thin film property of Resistance Temperature Detect (측온 저항체의 Pt 박막 특성 연구)

  • Park, Jung-Ho;Ji, Mi-Jung;Choi, Byung-Heon;Lee, Jung-Min;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.29-29
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    • 2008
  • Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.

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Fabrication of Micro-heaters Using MgO as Medium Layer and It`s Application for Micro-Flowsensors (매개층 산화마그네슘막을 이용한 백금박막 미세발열체의 제작과 마이크로 유량센서에의 응용)

  • 홍석우;조정복;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.358-361
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    • 1999
  • This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD\`s and micro-heater on the Si substrate, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer The MgO layer improved adhesion of Pt thin-films to SiO$_2$` layer without any chemical reactions to Pt thin-films under high as gas flow rate and its conductivity increased due to increase of heat-loss from sensor to external. Output voltage was 82 mV at N2 flow rate of 2000 sccm/min, heating power of 1.2W. The respons time was about 100 msec when input flow was step-input

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