• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.311-314
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• 1999

Ferroelectric PZT heterolayered thin films were fabricated by spin coating method on the Pt/Ti/SiO$_2$/Si substrate using PZT(10/90) and PZT(90/10) metal alkoxide solutions. All PZT heterolayered films showed a homogeneous grain structure without presence of the rosette structure. It can be assumed that the lower PZT layers a role of nucleation site or seeding layer for the formation of the upper PZT layer. Zr and Ti diffusion into the Pt electrode were mainly distributed at the surface of Pt electrode beneath the PZT/Pt interface. The PZT/Pt interfacial layer showed a microstructure characterized by a grain phase surrounded by a Pb-deficient pyrochlore matrix phase. The relative dielectric constant and the dielectric loss of the PZT-6 film were 567 and 3.6, respectively.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.274-275
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• 2007

The investigation of the equivalent circuit models for the electrode/electrolyte interface has been pursued for a long time by several researchers. Previous circuit models fit the experimental results in limited conditions such as frequency range, type of electrode, or electrolyte. This paper describes a new electrical circuit model and its capability of fitting the experimental results. Electrochemical impedance spectroscopy was used to characterize the interface for Au, Pt, and stainless steel electrode in 0.9% NaCl solution. Both the proposed model and the previous model were applied to fit the measured impedance results for comparison. The proposed model fits the experimental data more accurately than other models especially at the low frequency range, and it enables us to predict the impedance at very low frequency range, including DC, using the proposed model.

• Korean Journal of Materials Research
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• v.10 no.10
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• pp.684-690
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• 2000

In order to study effects of interfacial layers between $Pb(Zr,Til)Q_3(PZT)$ films and electrodes for Metal-Ferroelectric-MetaI(MFM) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interfacial-layer/Pt/$TiO_2/SiO_2$/Si structure. $PbTiO_3(PT)$ interfacial layers were formed by sol-gel deposition and PbO, ZrO, and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT(crystalline Temp. $600^{\circ}C$) films compare to $PbO_2\;and\;ZrO_2$ layers. However, as the thickness of $TiO_2$ layer increases. PZT thin films become rough and electrical characteristics were deteriorated due to remained anatase phase. On the other hand. PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is a also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.7
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• pp.77-84
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• 1995

We studied the effects of the Zr/Ti ration and the bottom electrode (Pt or ITO) on the electrical properties of PZT thin films prepared by sol-gel method. Their permittivities and tagent losses with the variation of frequencies were measured by the LCR meter and their maximum polarizations, remanent polarizations, and coercive fields were obtained from the hysteresis loops measured by the Sawyer-Tower circuit. For the PZT thin film of the Zr/Ti ration of 53/47, permittivity at 10kHz, coercive field, maximum and remanent polarizations ere measured as 952, 20.7kV/cm, 10.43${\mu}C/cm^{2}$ and 4.3${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ration of 25/75, coercive field, maximum and remanent polarizations were measured as 33.12kV/cm, 5.59${\mu}C/cm^{2}$ and 1.5${\mu}C/cm^{2}$, respectively. For the film of the Zr/Ti ratio of 75/25, they were measured as 23.8kV/cm, 7.45${\mu}C/cm^{2}$, and 3.5${\mu}C/cm^{2}$, repectively. Our investigation into the effects of the lower electrode on the electrical properties of PZT films showed the following results. The permittivities of the PZT films deposited on the ITO electrode decreased more quickly than those of the PZT films on the Pt electrode. The tangent losses of the former films increased more quickly than those of the latter. These may be due to the degradation of the quality of the interface between the electrode and the film, which results from the diffusion of Pb. It is also noticeable that permittivities and tangent losses of the PZT films deposited on the ITO electrode varied differently with the Zr/Ti ratio. This may indicate that the quality of the interface between the electrode and the film changes with the Zr/Ti ration of the PZT film.

• Korean Journal of Materials Research
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• v.14 no.10
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• pp.688-695
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• 2004

The capacitor contact barrier(CCB) layers have been introduced in the FeRAM integration to prevent the Pt/Al reaction during the back-end processes. Therefore, the interdiffusion and intermetallic formation in $Pt(1500{\AA})/Al(3000{\AA})$ film stacks were investigated over the annealing temperature range of $100\sim500^{\circ}C$. The interdiffusion in Pt/Al interface started at $300^{\circ}C$ and the stack was completlely intermixed after annealing over $400^{\circ}C$ in nitrogen ambient for 1 hour. Both XRD and SBM analyses revealed that the Pt/Al interdiffusion formed a single phase of $RtAl_2$ intermetallic compound. On the other hand, in the presence of TiN($1000{\AA}$) barrier layer at the Pt/Al interface, the intermetallic formation was completely suppressed even after the annealing at $500^{\circ}C$. These were in good agreement with the predicted effect of the TiN diffusion barrier layer. But the conventional TiN CCB layer could not perfectly block the Pt/Al reaction during the back-end processes of the FeRAM integration with the maximum annealing temperature of $420^{\circ}C$. The difference in the TiN barrier properties could be explained by the voids generated on the Pt electrode surface during the integration. The voids were acted as the starting point of the Pt/Al reaction in real FeRAM structure.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.227-228
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• 2012

In interfaces between carbon black or Pt and FTO glass in dye-sensitized solar cell counter electrodes, a marginal resistant channel for electrons, we tried to improve the connection by modifying the sintering process. A stepwise sintering process for carbon black and Pt counter electrodes was applied and its effect on power conversion efficiency was studied. Power conversion efficiencies of built-in DSSC made by a one-step sintering process with carbon black and Pt counter electrodes were about 5.01% and 5.02%, respectively. Cells made with the stepwise sintering process were 5.96% and 6.21%, respectively, indicating an 20% improvement. Fill factor (FF) increased, and it was them main reason for the power conversion efficiency improvement. Step wise sintering increased the adhesion of the interface and reduced the film thickness and surface roughness. As a result, the resistivity of the counter electrode and EIS impedance of DSSCs decreased.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.360-363
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• 2009

In order to improve the overall power conversion efficiency, it is very important to reduce the interface resistance of dye-sensitized solar cells (DSSCs). In this approach, tiny $TiO_2$ nanoparticles with the primary size of 10~20nm were synthesized and deposited between FTO glass and preformed $TiO_2$ layer by $TiOCl_2$ treatment, and also Pt catalysts were deposited on the counter electrode by both ion-sputter and thermal deposition to reduce the electrolyte-counter electrode interface resistance. The influence of these processes on the performace of DSSCs were discussed in terms of fill factor, short circuit current, and conversion efficiency.

• Journal of the Microelectronics and Packaging Society
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• v.10 no.2
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• pp.49-54
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• 2003

We have investigated the effects of hydrogen annealing on the physical and electrical properties of $SrBi_{2}Ta_{2}O_9(SBT)$ thin films in the Pt/SBT/Si (MFS) structure and Pt/SBT/Pt (MFM) one, respectively. The microstructure and electrical characteristics of the SBT films were deteriorated after hydrogen annealing due to the damage of the SBT films during the annealing process. To investigate the reason of the degradation of the SBT films in this work, in particular, the effect of the Pt top electrodes, SBT thin films deposited on Si, Pt, respectively, were annealed with the same process conditions. From the XRD, XPS, P-V, and C-V data, it was seen that the SBT itself was degraded after $H_2$ annealing even without the Pt top electrodes. In addition, the degradation of the SBT films after $H_2$ annealing was accelerated by the catalytic reaction of the Pt top electrodes which is so-called hydrogen degradation. To prevent this phenomenon, we proposed the alternative top electrode material, i.e. Ir, and the electrical properties of the SBT thin films were examined in the $Ir/IrO_2/SBT/IrO_2$ structures before and after the H$_2$ annealing and recovery heat-treatment processes. From the results of the P-V measurement, it could be concluded that Ir is one of the promising candidate as the electrode material for degradation resistance in the MFM structure using SBT thin films.

• Journal of the Korean Electrochemical Society
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• v.2 no.1
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• pp.23-26
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• 1999

The Langmuir adsorption isotherm at the $(Pt)/0.1M\;H_2SO_4$ electrolyte interface has been qualitatively analyzed using the ac impedance measurement and phase-shift method. The phase shift $(\phi)$ depends on both the cathode potential (E<0) and frequency (f) and is inversely proportional to the factional surface coverage $(\theta)$. At an intermediate frequency band (ca. $1\~100$ Hz), the phase-shift profile $(\phi\;vs.\;E)$ can be related to the fractional surface coverage $(\theta\;vs.\;E)$. The phase-shift profile $(\phi\;vs.\;E)$ can be used as an experimental method to estimate and analyze the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) and the standard free energy $({\Delta}G_{ads})$ of the adsorbed hydrogen atom $(H_{ads})\;and\;3\times10^{-4}$ and 20.1 kJ/mol, respectively.