• Corrosion Science and Technology
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• 제9권6호
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• pp.281-288
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• 2010

This study examined the carbon corrosion at Pt/C interface in proton exchange membrane fuel cell environment. The Pt nano particles were electrodeposited on carbon substrate, and then the corrosion behavior of the carbon electrode was examined. The carbon electrodes with Pt nano electrodeposits exhibited the higher oxidation rate and lower oxidation overpotential compared with that of the electrode without Pt. This phenomenon was more active at $75^{\circ}C$ than $25^{\circ}C$. In addition, the current transients and the corresponding power spectral density (PSD) of the carbon electrodes with Pt nano electrodeposits were much higher than those of the electrode without Pt. The carbon corrosion at Pt/C interface was highly accelerated by Pt nano electrodeposits. Furthermore, the polarization and power density curves of PEMFC showed degradation in the performance due to a deterioration of cathode catalyst material and Pt dissolution.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.177-185
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• 2005

Fatigue characteristics of lead zirconate titanate (PZT) films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) were investigated. The fatigue characteristics were investigated with respect to PZT film thickness, domain structure, fatigue pulse height, temperature, electrode materials and electrode configurations. The used top and bottom electrode materials were Pt and $RuO_2$. In the fatigue characteristics with fatigue pulse height and PZT film thickness, the fatigue rates are independent of the applied fatigue pulse height at the electric field regions to saturate the P-E hysteresis and polarization $(P^*,\;P^A)$ characteristics. The unipolar and bipolar fatigue characteristics of PZT capacitors with four different electrode configurations $(Pt//Pt,\;Pt//RuO_2,\;RuO_2//Pt,\;and\;RuO_2//RuO_2)$ were also investigated. The polarization-shifts during the unipolar fatigue and the temperature dependence of fatigue rate suggest that the migration of charged defects should not be expected in our CVD-PZT films. It seems that the polarization degradations are attributed to the formation of charged defects only at the Pt/PZT interface during the domain switching. The charged defects pin the domain wall at the vicinity of Pt/PZT interface. When the top and bottom electrode configurations are of asymmetric $(Pt//RuO_2,\;RuO_2//Pt)$, the internal fields can be generated by the difference of charged defect densities between top and bottom interfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.187-187
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• 2010

In this study, we investigated the effect of electrodes on resistance switching of TaOx film. Pt, Ni, TiN, Ti and Al metal electrodes having the different oxidation degree were deposited on TaOx/Pt stack. Unipolar resistance switching behavior in Pt or Ni/TaOx/Pt MIM stacks was investigated, but bipolar resistance switching behavior in TiN, Ti or Al /TaOx/Pt MIM stacks was shown. We investigated that the voltage dependence of capacitance was decreased with higher oxidation degree of metal electrodes. Through the C-V results, we expected that linearity ($\alpha$) and quadratic ($\beta$) coefficient was reduced with an increase of interface layer between top electrode and Tantalum oxide. Transmission Electron Microscope (TEM) images depicted the thickness of interface layer formed with different oxidation degree of top electrode. Unipolar resistance switching behavior shown in lower oxidation degree of top electrode was expected to be generated by the formation of the conducting path in TaOx film. But redox reaction in interface between top electrode and Tantalum oxide may play an important role on bipolar resistance switching behavior exhibited in higher oxidation degree of top electrode. We expected that the resistance switching characteristics were determined by oxidation degree of metal electrodes.

• 한국세라믹학회지
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• 제37권3호
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• pp.263-270
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• 2000

The Pt/copper oxide/n-Si electrodes were fabricated by depositing copper oxide thin film of 500${\AA}$ and very thin Pt layer on the n-type (100) Si substrate. hotoelectrochemical properties and stability profiles of the electrodes were investigated as a function of deposition time of Pt layer. As the deposition time of Pt layer increased up to 10 seconds, the photocurrent and quantum efficiency were increased and then decreased with further depositing time. The better cell stability was observed for the electrode with longer deposition time. The improvements in above photoelectrochemical properties indicate that Pt layer acts as a catalyst layer at electrode/electrolyte interface as well as a protective layer. The decreasing tendency of the photocurrent and efficiency for the electrode with Pt layer deposited above 20 seconds was explained as an increases in probbility of electron-hole pair recombination and also the absorbing photon loss at electrode surface due to the excessive thickness of Pt layer. The results were confirmed by impedance spectroscopy, mutiple cycle voltammograms and microstructural analyses.

• 한국세라믹학회지
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• 제37권11호
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• pp.1126-1129
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• 2000

The crystallographic orientations of $Ba_{0.6}$S $r_{0.4}$Ti $O_3$(BST) thin film deposited by a metal-organic chemical vapor deposition on (111) textured Pt electrode were studied with a transmission electron microscopy. The fully crystallized BST thin film (50nm) has (100) and (110) preferred orientations. A high resolution transmission electron microscopy study has revealed the crystallographic orientation relationships between BST thin film and Pt electrode. These relationships explained the preferred orientation of BST film on (111) textured Pt electrode. With these results, we could represent the atomic arrangement at the BST/Pt interface.e.e.

• 전기학회논문지
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• 제56권6호
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• pp.1087-1091
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• 2007

Exact impedance modeling of the electrode/electrolyte interface is important in bio-signal sensing electrode development. Therefore, the investigation of the equivalent circuit models for the interface has been pursued for a long time by several researchers. Previous circuit models fit the experimental results in limited conditions such as frequency range, type of electrode, or electrolyte. This paper describes a new electrical circuit model and its capability of fitting the experimental results. The proposed model consists of three resistors and two constant phase elements. Electrochemical impedance spectroscopy was used to characterize the interface for Au, Pt, and stainless steel electrode in 0.9% NaCl solution. Both the proposed model and the previous model were applied to fit the measured impedance results for comparison. The proposed model fits the experimental data more accurately than other models especially at the low frequency range, and it enables us to predict the impedance at very low frequency range, including DC, using the proposed model.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권4호
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• pp.139-143
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• 2005

For application of carbon nano-tube (CNT) as a counter electrode materials of dye-sensitized solar cell (DSSC), the electrochemical behavior of CNT electrode was studied, employing cyclic-voltammetry (C-V) and impedance spectroscopy. Fabrication of CNT-paste and formation of CNT-counter electrode for characteristic measurement have been carried out using ball-milling and doctor blade process, respectively. Unit cell for measurements was assembled using Pt electrode, CNT electrode, and iodine-embedded electrolyte. Field emission-scanning electron microscopy (FE-SEM) was used for structural investigation of CNT powder and electrode. Sheet resistance of electrode was measured with 4-point probe method. Electrochemical properties of electrode, C-V and impedance spectrum, were studied, employing potentiogalvanostat (EG&G 273A) and lock in amplifier (EG&G 5210). As a results, the sheet resistance of CNT electrode is almost similar to that of F-doped SnO2 (FTO) coated glass substrate as approximately 10 ohm/sq. From C-V and impedance spectroscopy measurements, it was found that CNT electrode has high reaction rate and low interface reaction resistance between CNT surface and electrolyte. These results provides that CNT electrode were superior to that of conventional Pt electrode. Particularly, the reaction rate in the CNT electrode is about thrice high than Pt electrode. Therefore. CNT electrode is to be good candidate material for counter electrode in DSSC.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.87-91
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• 2004

[ $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)/Pt$ ] 구조에서 $350^{\circ}C$ 온도로 수소열처리에 의한 강유전특성 열화를 방지하기 위한 W-N/Pt 하부전극의 효과를 살펴보았다. 그 결과 Pt와 SBT 박막사이에 증착된 W-N박막에 의해 수소의 확산을 차단할 수 있었다. Pt 표면에서 수소원자가 화학적인 흡착이 일어나지 않음으로써 흡착된 수소가 SBT 박막내의 산소와 결합하게 됨으로써 oxygen deficiency가 발생하는 것을 막을 수 있었다. W-N 박막이 양호한 확산방지막으로 작용하여 강유전특성의 열화현상을 방지 할 수 있었다.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.214-220
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• 2005

The ferroelectric properties of the $Pt/PZT(Pb(Zr,Ti)O_3)/Pt$ capacitors are severely degraded when they are annealed in hydrogen-containing environment. Hydrogen atoms created by the catalytic reaction of Pt top electrode during annealing in hydrogen ambient penetrate into PZT films and generate oxygen vacancies by the reduction of the PZT films, which is likely to cause the degradation. The degree of hydrogen-induced degradation and the direction of voltage shift in P-E curves of the pre-poled PZT capacitors after annealing in hydrogen ambient is dependent on the polarity of the pre-poling voltage. This implies that oxygen vacancies causing hydrogen induced degradation are generated by hydrogen ions having a polarity. The degraded ferroelectricity of the PZT capacitors can be effectively recovered by the shift of oxygen vacancies toward the Pt top electrode interface during post-annealing in oxygen environment with applying negative unipolar stressing.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.273-278
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• 2000

In order to study effects of interface layers between PZT films and electrodes for MFM(Metal-Ferroelectric-Metal) structure capacitors, we have fabricated the capacitors with the Pt/PZT/interface-layer/Pt/$TiO_2/SiO_2/Si$ structure. $PT(PbTiO_3)$ interface layers were formed by sol-gel deposition and PbO, $ZrO_2$ and $TiO_2$ thin layers were deposited by reactive sputtering. $TiO_2$ interface layers result in the finest grains of PZT films compared to $PbO_2$ and $ZrO_2$ layers. On the other hand, PT interface layers result in improved morphology of PZT films and do not significantly change ferroelectric properties. It is also observed that seed layers at the middle and top of PZT films do not give significant effects on grain size but the PT seed layer at the interface between the bottom electrode and the PZT films results in the small grain size.