• Title/Summary/Keyword: Pt Thin Films

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Annealing Characteristics of Pt-Co Alloy thin Films for RTD Temperature Sensors (RTD용 Pt-Co 합금박막의 열처리 특성)

  • Hong, Seog-Woo;Seo, Jeong-Hwan;No, Sang-Soo;Chung, Gwiy-Sang
    • Proceedings of the KIEE Conference
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    • 1998.07d
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    • pp.1349-1351
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    • 1998
  • Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.

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A Study on the Saturation of Grain Size in Pb(Zr, Ti)$O_3$ Thin Films (Pb(Zr, Ti)$O_3$ 박막에서 결정립 크기 포화 현상에 관한 연구)

  • 이장식;김찬수;주승기
    • Journal of the Korean Ceramic Society
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    • v.37 no.6
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    • pp.530-536
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    • 2000
  • During the grain growth of the PZT thin films by selective nucleation method using PZT seed, it was found that the grain size was saturated with the annealing temperature. The saturation of grain size was analyzed by the interfacial energy which appeared during the crystallization. The factors affecting the saturation of grain size were found to be the interfacial energy between perovskite phase and pyrochlore phase, and PZT thin film and the bottom Pt electrode. When the ion damage was introduced to the grain-size saturated PZT thin films, further lateral growth was observed. Pt bottom electrode thickness was changed to control the interfacial energy between the PZT thin film and the Pt bottom electrode. When Pt thickness was increased, the grain size was also increased, because the lattice parameter of Pt films was increased with the thickness of the Pt films. The incubation time of nucleation was increased with the amount of the ion damage on the Pt films.

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The Formation of Pt-Co Alloy Thin Films for RTD Temperature Sensors with Wide Temperature Ranges (광대역 측온저항체 온도센서용 Pt-CO 합금박막의 형성)

  • 김서연;노상수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.335-338
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    • 1997
  • Platinum-Cobalt alloy thin films were deposited on A1$_2$O$_3$substrate by magnetron cosputtering for RTD temperature sensors with wide temperature ranges. We made Pt-Co alloy resistance patterns on the A1$_2$O$_3$substrate by lift-off method and fabricated Pt-Co alley RTD temperature sensors by using Pt-wire, Pt-paste. We investigated the physical and electrical characteristics of theme films under various conditions, input power, working vacuum, annealing temperature and time, and also after annealing these films. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature. At input power of Pt : 4.4 W/cm$^2$, Co : 6.91 W/cm$^2$, working vacuum of 10 mTorr and annealing conditions of 800$^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was 15${\mu}$$\Omega$$.$cm and 0.5$\Omega$/ , respectively, and the TCR value of Pt-Co alloy thin films with thickness of 3000${\AA}$ was 3740ppm/$^{\circ}C$ in the temperature range of 25∼600$^{\circ}C$. These results indicate that Pt-Co alloy thin films hove potentiality for the RTD with wide temperature ranges.

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Fabrication of Pt-Co Alloy Thin Films RTD Temperature Sensors (Pt-Co 합금박막 측온저항체 온도센서의 제작)

  • 홍석우;서정환;정귀상;노상수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.431-434
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    • 1998
  • Platinum-Cobalt alloy thin films were deposited on Al$_2$O$_3$ substrate by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the Al$_2$O$_3$ substrate by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : 4.4 W/$\textrm{cm}^2$, Co : 6.91 W/$\textrm{cm}^2$, working vacuum on and annealing conditions of 1000 $^{\circ}C$ and 60 min, the resistivity and the sheet resistive thin films were 15 ${\mu}$$\Omega$$.$cm and 0.5 $\Omega$/$\square$, respectively. The TCR value of Pt-Co a films was measured with various thickness of thin films and annealing temperature. T TCR value is gained under condition 3000${\AA}$ of thin films thickness and 1000$^{\circ}C$ of temperature. These results indicate that Pt-Co alloy thin films have potentiality for the wide temperature ranges.

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The Effect of Annealing Treament with Aluminum Oxide as Medium Layer and Platinum Heater (매개층 알루미늄산화막과 백금 발열체의 열처리 효과)

  • 노상수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.04a
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    • pp.314-317
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    • 1997
  • The electrical and physical characteristics of aluminum oxide and Pt thin films on it, deposited by reactive sputtering and DC magnetron sputtering respectively, were analyzed with increasing annealing temperature(400~80$0^{\circ}C$) by four point probe, SEM and XRD. Under $600^{\circ}C$ of annealing temperature, aluminum oxide had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin films and the resistivity of Pt thin films was improved. But these properties of aluminum oxide and Pt thin films on it were degraded over $700^{\circ}C$ of annealing temperature because aluminum oxide was changed into metal aluminum and then reacted to Pt thin films deposited on it. In the analysis of the thermal charateristics of Pt micro-heater fabricated on Si07/si substrate, the temperature of Pt micro-heater is up to 41$0^{\circ}C$ with the power dissipation 1.8 watts.

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Electrical Properties of Pt/SCT/Pt Thin Film Structure (Pt/SCT/Pt 박막 구조의 전기적인 특성)

  • Kim, Jin-Sa;Shin, Cheol-Gi
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.10
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    • pp.1786-1790
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    • 2007
  • The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

Pyroelectric Peyformance Evaluation of Pure PZT and Alternately Deposited PZT/PT Thin Films (PZT 순수박막과 PZT/PT 교차박막의 적외선 감지 특성 비교)

  • Ko, Jong-Soo;Kwak, Byung-Man
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.26 no.6
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    • pp.1001-1007
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    • 2002
  • To improve the performance of the PZT thin flms, each PZT and PT layer was alternately deposited on a Pt/Ti/Si$_3$N$_4$/SiO$_2$/Si substrate by a modified sol-gel solid precursor technique. For comparison, PZT thin films were also prepared with an identical method under the same conditions. XRD measurement revealed that the diffraction pattern of the multilayer film was due to the superimposition of the PZT and PT patterns. At 1㎑, a dielectric constant of 389 and 558, a dielectric loss of 1.2% and 1.1% were obtained for the PZT/PT and PZT thin films, respectively. If we consider the PT dielectric constant to be 260, it is clear that the dielectric constant of alternately deposited PZT/PT thin films was well adjusted. The PZT/PT thin film showed a low dielectric constant and a similar dielectric loss compared with those of the PZT film. The figures of merit on detectivity for the PZT/PT and PZT thin films were 20.3$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and 18.7$\times$10$\^$-6/㎩$\^$-$\sfrac{1}{2}$/, and the figures of merit on voltage response were 0.038㎡/C and 0.028 ㎡/C, respectively. The high figures of merit for the PZT/PT film were ascribed to its relatively low dielectric constant when compared to the PZT thin films.

Characteristics of Thin-film Type Pt-RTD's Fabricated on Si Wafers (Si기판상에 제작된 박막형 백금 측온저항체 온도센서의 특성)

  • 홍석우;노상수;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.354-357
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    • 1999
  • This paper describes on the electrical and physical charateristics thin-film type Pt-RTD\\`s on Si wafers, in which MgO thin-films were used as medium layer in order to improve adhesion of Pt thin-films to SiO$_2$ layer. The MgO medium layer had the properties of improving Pt adhesion to SiO$_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had 3927 ppm/$^{\circ}C$ and liner in the temperature range of room temperature to 40$0^{\circ}C$

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Characteristics of Pt thin films on WC for glass lens molding (유리렌즈 성형용 초경합금의 Pt 박막의 특성에 관한 연구)

  • Park, Soon-Sub;Lee, Ki-Yung;Won, Jong-Ho
    • Journal of the Korean Society of Manufacturing Process Engineers
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    • v.8 no.3
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    • pp.62-67
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    • 2009
  • Pt thin films on Cr or Ti interlayer were deposited onto a tungsten carbide(WC) substrate by the ion beam assisted DC magnetron sputtering. The various atomic percent of Cr and Ti underneath of the Pt films were prepared to examine the total thin film characteristics. The microstructure and surface analysis of the specimen were conducted by using the SEM, XRD and AFM. Mechanical properties such as hardness and adhesion strength of Pt thin film also were examined. The interlayer of pure Ti was formed with 40 nm thickness while that of pure Cr was done with 50 nm as standard reference. The growth rate of either Cr or Ti thin film was almost same under the same deposition conditions. The SEM images showed that anisotropic grain of Pt thin films consisting of dense columnar structures irrespectively grew from the different target compositions. The values of hardness and adhesion strength of Cr/Pt thin film coated on a WC substrate were higher than those of Ti/Pt thin film.

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Study on Pt thin film property of Resistance Temperature Detect (측온 저항체의 Pt 박막 특성 연구)

  • Park, Jung-Ho;Ji, Mi-Jung;Choi, Byung-Heon;Lee, Jung-Min;Ju, Byeong-Kwon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.29-29
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    • 2008
  • Platinum Thin films were deposited on $Al_2O_3$ by Rf magnetic Sputtering. The physical and electrical characteristics of these films were analyzed under various deposition conditions(Ar gas pressure, input power, substrate temperature.) and annealing condition. The deposition rate was increased with increasing the input power but not increased linear. In the other factor, The Pt thin films property was associated with resistance. so lower resistance had more and more good Pt thin films condition. For the purpose of this study, we will get the best Pt thin film characteristics.

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