• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.244.2-244.2
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• 2015

염료감응형 태양전지(DSSC)는 친환경성과 저렴한 제조공정이 장점으로 최근에 많은 관심을 받고 있다. 현재에는 DSSC를 다양한 반도체 나노입자를 염료에 흡착시키거나, 무반사 코팅등 광학적인 접근을 통해 효율을 증가시키려는 실험이 활발히 진행되고 있다. 다른 한편으로는 DSSC의 효율을 떨어뜨리지 않으면서 DSSC의 장점인 저렴한 제조단가를 더 줄이는 연구가 진행되고 있다. 본 연구에서는 DSSC의 재료물질 중 가장 비싼 편인 Pt 박막을 다른 물질로 대체하기 위해, 몇 가지 공정을 거쳐 추출한 carbon을 사용하였다. 전형적인 DSSC 제작을 위해, FTO glass와 TiO2, 액체전해질을 사용하였고, 제작된 carbon 물질을 solvent에 섞은 뒤 counter electrode에 닥터 블레이드 방식으로 바르고 열처리하였다. 제작된 carbon을 분석하기 위해서 scanning electron microscope (SEM)과 X-ray diffraction (XRD)를 사용하였으며, counter electrode에 carbon을 사용한 DSSC는 Pt 박막을 사용한 일반적인 DSSC와 비교하였을 시에 만족할 만한 효율을 보이는 것을 확인하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.5
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• pp.382-385
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• 2021

Electrical poling is a crucial step to convert ferroelectrics to piezoelectrics. Nevertheless, no systematic investigation on the effect of poling has been reported. Given that the poling involves an alignment of spontaneous polarization, the condition for poling should be different when a material has an internal bias field that influences the domain stability. Here, we present the effect of poling profile on the dielectric and piezoelectric properties in Mn-doped Pb(Mg_1/3Nb_2/3)O₃-29 mol%PbTiO₃ single crystal with an internal bias field. We showed that both the dielectric permittivity and the piezoelectric coefficient were further enhanced when the poling procedure ends with a field application along the opposite direction to the internal bias field. We expect that the current finding would give a clue to understanding the true mechanism for the electrical poling.

• Journal of Sensor Science and Technology
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• v.7 no.2
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• pp.103-110
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• 1998

Pyroelectric infrared detectors based on La-modified $PbTiO_{3}$ (PLT) thin films have been fabricated by RF magnetron sputtering and rnicrornachining technology. The detectors form $Pb_{l-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.05) thin film ferroelectric capacitors epitaxially grown by RF magnetron sputtering on Pt/MgO (100) substrate. The sputtered PLT thin film exhibits highly c-axis oriented crystal structure that no poling treatment for sensing applications is required. This is an essential factor to increase the yield for realization of an infrared image sensor. Micromachining technology is used to lower the thermal mass of the detector by giving maximum sensor efficiency. Polymide is coated on top of the sensing elements to support the fragile structure and the backside of the MgO substrate is selectively etched to reduce the heat loss. The sensing element exhibited a very high detectivity D* of $8.5{\times}10^{8}cm{\cdot}\sqrt{Hz}/W$ at room temperature and it is about 100 times higher than the case of micromachining technology is not used. A sensing system that detects the position as well as the existence of a human body is realized using the array sensor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.297-302
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• 2013

Enhancement of photocatalytic activity of UV/photocatalysis was carried out to oxidize the gaseous $H_2S$ in a tubular reactor coated with photocatalyst of sol type $TiO_2$. EtOH was used as the standard material to select the photocatalyst, and it was confirmed that the reactor activity was dependent on the coated surface characteristics. The selected photocatalytic reactor, which coated with STS-01, showed about 80% conversion when the gas linear velocity was 0.01 m/s and relative humidity was 40%. However, the conversion level of the reaction decreased significantly with increasing gas linear velocity. Pt was loaded on the photocatalyst to enhance and maintain the performance of the reactor, which enhanced the conversion level of $H_2S$ more than 95% under the same experimental condition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.594-597
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• 2003

In the present study, the piezoelectricity and polarization of multilayer ceramic actuator, being designed to stack PMN-PZ-PT ceramic layers and Ag-Pd electrode layers alternatively, were investigated under a consideration of geometric factor, the volume ratio of the ceramic to the electrode layers. The actuators were fabricated by tape casting of 0.2Pb(Mg1/3Nb2/3)O3-0.38PbZrO3-0.42PbTiO3 followed by lamination and burnout & co-firing processes. The actuators of 10 10 0.62 nm3 in size were formed in a way that 60 200 m thick ceramics were stacked alternatively with 5 m thick electrode layer. Increases in polarization and electric field-induced displacement with thickness of the ceramic layer were attributed to change of 90o/180o domain ratio, which was affected by interlayer internal stress. The piezoelectricity and actuation behaviors were found to depend upon the volume ratio (or thickness ratio) of ceramic to electrode layers.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.92-96
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• 1998

Ferroelectric Bi-layered oxides SrBi2Ta2O9 (SBT) thin films have been deposited on Pt/Ti/SiO2/Si substrates using multi-target sputtering. Structure, composition, and electrical properties have been investigated on films. The SBT films were deposited with the various bismuth sputtering powers. The SBT films deposited with the bismuth sputtering power of 20 W have the most dense microstructure and the remanent polarization (Pr) of 9.2 ${\mu}$C/cm and the coercive field (Ec) of 43.8 kV/cm at an applied voltage of 5V. The SBT films deposited with the bismuth sputtering power of 20W showed a fatigue-free characteristics up to 1.0${\times}$1010 cycles under 5V bipolar pulse and a leakage current density of 2.0${\times}$10-8 A/$\textrm{cm}^2$ at 200 kV/cm.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.697-700
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• 2004

The SBT$(Sr_{0.8}Bi_{2.4}Ta_2O_9)$ thin films for semiconductor device were deposited on Pt-coated $Pt/TiO_2/SiO_2Si$ wafer by RF magnetron sputtering method at $400[^{\circ}C]$ and annealed at the temperature range from $600[^{\circ}C]$ to $850[^{\circ}C]$. The top electrodes(Pt) were deposited on SBT thin film by DC sputtering method. The crystallinity of SBT thin films were increased with increase of annealing temperature in the temperature range of $600[{\circ}C]\sim850[^{\circ}C]$. The annealing temperature properties were to be most excellent in the case of annealed SBT thin film at $750^{\circ}C]$. And, the maximum remanent polarization$(2P_r)$ and the coercive electric field$(E_c)$ at annealing temperature of $750[^{\circ}C]$ obtained about $11.60[{\mu}C/cm^2]$ and 48[kV/cm], respectively. Specially, it was seen that fatigue properties does not change in $10^{10}$ switching cycle.

• Korean Journal of Materials Research
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• v.23 no.6
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• pp.329-333
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• 2013

The structural phase transformations of $0.7Pb(Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) were studied using high resolution x-ray diffraction (HRXRD) as a function of temperature and electric field. A phase transformational sequence of cubic (C)${\rightarrow}$tetragonal (T)${\rightarrow}$rhombohedral (R) phase was observed in zero-field-cooled conditions; and a $C{\rightarrow}T{\rightarrow}$monoclinic $(M_C){\rightarrow}$ monoclinic ($M_A$) phase was observed in the field-cooled conditions. The transformation of T to $M_A$ phase was realized through an intermediate $M_C$ phase. The results also represent conclusive and direct evidence of a $M_C$ to $M_A$ phase transformation in field-cooled conditions. Beginning from the zero-field-cooled condition, a $R{\rightarrow}M_A{\rightarrow}M_C{\rightarrow}T$ phase transformational sequence was found with an increasing electric field at a fixed temperature. Upon removal of the field, the $M_A$ phase was stable at room temperature. With increasing the field, the transformation temperature from T to $M_C$ and from $M_C$ to $M_A$ phase decreased, and the phase stability ranges of both T and $M_C$ phases increased. Upon removal of the field, the phase transformation from R to $M_A$ phase was irreversible, but from $M_A$ to $M_C$ was reversible, which means that $M_A$ is the dominant phase under the electric field. In the M phase region, the results confirmed that lattice parameters and tilt angles were weakly temperature dependent over the range of investigated temperatures.

• Korean Journal of Materials Research
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• v.21 no.7
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• pp.391-395
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• 2011

The structure and dielectric properties of poled <001>-oriented 0.7Pb($Mg_{1/3}Nb_{2/3})O_3-0.3PbTiO_3$ (PMN-0.3PT) crystals have been investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric field induced monoclinic phase was observed for the initial poled sample. The phase remained stable after the field was removed. A quite different temperature dependence of dielectric constant has been observed between heating and cooling due to an irreversible phase transformation. The results of mesh scans and temperature dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase at 370K and to a paraelectric cubic phase at 405K upon heating. However, upon subsequent cooling from the unpoled state, the cubic phase changes to a poly domain tetragonal phase and to a rhombohedral phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that of the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary and at the phase transition temperature.