• Title/Summary/Keyword: Protection device

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The Development of Surge Protection Circuit Applying SCR for Improving Reliability (신뢰도 향상을 위해 SCR을 응용한 서지 보호회로 개발)

  • NamKoong, Up;Chu, Kwang-Uk
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.8
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    • pp.96-101
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    • 2012
  • A surge protection device of the metal oxide varistor(MOV) has been commonly used for preventing electrical damage in many electronic equipments. The MOV has a property that leakage current is increased and might be permanently damaged when it is exposed continuously to the electrical stresses such as lightening surges. In this paper, we propose a novel surge protection circuit adopting a silicon controlled rectifier(SCR) in the traditional protection circuits using the MOV device simultaneously. When lightning surges are injected to the proposed circuit, the MOV lets the surge pulses bypassing through the ground at first up to the level that SCR begins to operate. Above the threshold level of turning on the SCR, the SCR operates bypasses large surge currents to the ground. Proposed circuit was verified with a leakage current experiment and PSpice circuit simulations under the repeated surge injection environment.

TLP Properties Evaluation of ESD Protection Device of GGNMOS Type for Conventional CMOS Process (Conventional CMOS 공정을 위한 GGNMOS Type의 ESD 보호소자의 TLP 특성 평가)

  • Lee, Tae-Il;Kim, Hong-Bae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.875-880
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    • 2008
  • In this paper, we deal with the TLP evaluation results for GGNMOS in ESD protection device of conventional CMOS process. An evaluation parameter for GGNMOS is that repeatability evaluation for reference device($W/L=50\;{\mu}m1.0\;{\mu}m$) and following factors for design as gate width, number of finger, present or not for N+ gurad -ring, space of N-field region to contact and present or not for NLDD layer. The result of repeatability was showed uniformity of lower than 1 %. The result for design factor evaluation was ; 1) gate width leading to increase It2, 2) An increase o( finger number was raised current capability(It2), and 3) present of N+ gurad-ring was more effective than not them for current sink. Finally we suggest the optimized design conditions for GGNMOS in evaluated factor as ESD protection device of conventional CMOS process.

An Algorithm for Transfer Capability Evaluation in Power Systems with FACTS Device (FACTS적용계통에서의 송전용량 평가 알고리즘)

  • Yoon, Yong-Beum;Yoon, Jong-Su;Choo, Jin-Boo
    • Proceedings of the KIEE Conference
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    • 1998.07c
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    • pp.880-883
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    • 1998
  • In this paper, sensitivity based approach to estimate BITC(bilateral interchange transfer capacity) considering the real power flow control function of FACTS device is presented. The real power flow setting of the FACTS device is adjusted so that it transfer the power flow from the first violation point of transmission capacity to other transmission lines in the power system, thus allowing more power to be transferred from the specified generator bus to the specified load bus. The transfer between the two bus locations is increased from this new operating condition until a violation of transmission capacity limits occurs or until the setting of the FACTS device can no longer be adjusted. The proposed algorithm is illustrated using examples of small and real life power system.

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Improvement of Line Protection Methods by Dynamic Analysis on a FACTS-compensated transmission line (FACTS 보상 송전선의 동적 해석을 통한 송전선 보호 방안 개선)

  • Lim Jung-Uk;Runolfsson Thodur
    • The Transactions of the Korean Institute of Electrical Engineers A
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    • v.54 no.12
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    • pp.573-579
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    • 2005
  • Dynamic analysis of a transmission line which is compensated by a FACTS device such as STATCOM, SSSC and UPFC is carried out in this paper and the impacts on conventional line protection methods such as the DCPM (Differential Current Protection Method) and the DPM (Distance Protection Method) are reviewed. A refined DCRM is proposed to detect faults properly regardless of the FACTS operation. The proposed method is applied to a FACTS-compensated line with a variety of faults and is verified by simulation results. An adaptive DPM on a FACTS-compensated line was proposed previously in the literature. In order to emphasize the necessity of the modified DPM, the conventional DPM is applied to a FACTS-compensated system. Significant factors such as fault types, fault locations, and fault resistances as well as FACTS device types are considered for relaying setting.

Design of Low-Melting Metal Fuse Elements of Current Sensing Type Protection Device for Large Capacity Secondary Battery Protection System (대용량 이차전지 보호 시스템용 전류 감지 동작형 보호소자의 저융점 금속 가용체 설계)

  • Kim, Eun Min;Kang, Chang yong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.6
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    • pp.427-432
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    • 2018
  • High-capacity secondary batteries can cause explosion hazards owing to microcurrent variations or current surges that occur in short circuits. Consequently, complete safety cannot be achieved with general protection that is limited to a mere current fuse. Hence, in the case of secondary batteries, it is necessary for the protector to limit the inrush current in a short circuit, and to detect the current during microcurrent variations. To serve this purpose, a fuse can be employed for the secondary battery protection circuit with current detection. This study aims at designing a protection device that can stably operate in the hazardous circumstances associated with high-capacity secondary batteries. To achieve the said objective, a detecting fuse was designed from an alloy of low melting point elements for securing stability in abnormal current states. Experimental results show that the operating I-T and V-T characteristic constraints can be satisfied by employing the proposed current detecting self-contained low melting point fuse, and through the resistance of the heating resistor. These results thus verify that the proposed protection device can prevent the hazards of short circuit current surges and microcurrent variations of secondary batteries.

A Novel Electrostatic Discharge (ESD) Protection Device by Current Feedback Using $0.18\;{\mu}m$ Process ($0.18\;{\mu}m$ 공정에서 전류 피드백을 이용한 새로운 구조의 정전기 보호 소자에 관한 연구)

  • Bae, Young-Seok;Lee, Jae-In;Jung, Eun-Sik;Sung, Man-Young
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.3-4
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    • 2009
  • As device process technology advances, effective channel length, the thickness of gate oxide, and supply voltage decreases. This paper describes a novel electrostatic discharge (ESD) protection device which has current feedback for high ESD immunity. A conventional Gate-Grounded NMOS (GGNMOS) transistor has only one ESD current path, which makes, the core circuit be in the safe region, so an GGNMOS transistor has low current immunity compared with our device which has current feedback path. To simulate our device, we use conventional $0.18\;{\mu}m$ technology parameters with a gate oxide thickness of $43\;{\AA}$ and power supply voltage of 1.8 V. Our simulation results indicate that the area of our ESD protection, device can be smaller than a GGNMOS transistor, and ESD immunity is better than a GGNMOS transistor.

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Development of a Screening Method and Device for the Detection of Escherichia coli from Agri-Food Production Environments and Fresh Produce

  • Yun, Bohyun;An, Hyun-Mi;Shim, Won-Bo;Kim, Won-Il;Hung, Nguyen Bao;Han, Sanghyun;Kim, Hyun-Ju;Lee, Seungdon;Kim, Se-Ri
    • Journal of Microbiology and Biotechnology
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    • v.27 no.12
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    • pp.2141-2150
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    • 2017
  • This study was conducted to develop a screening method using Colilert-18 and a device for the detection of E. coli from agri-food production environments and fresh vegetables. The specificity and sensitivity of Colilert-18 by temperature ($37^{\circ}C$ and $44^{\circ}C$) were evaluated with 38 E. coli and 78 non-E. coli strains. The false-positive rate was 3.8% (3/78) and 0% (0/78) at $37^{\circ}C$ and $44^{\circ}C$, respectively. The detection limit of E. coli at $37^{\circ}C$ at <1.0 log CFU/250 ml was lower than that at $44^{\circ}C$. The efficiency of the developed device, which comprised an incubator equipped with a UV lamp to detect E. coli in the field, was evaluated by measuring the temperature and UV lamp brightness. The difference between the set temperature and actual temperature of the developed device was about $1.0^{\circ}C$. When applying the developed method and device to various samples, including utensils, gloves, irrigation water, seeds, and vegetables, there were no differences in detection rates of E. coli compared with the Korean Food Code method. For sanitary disposal of culture samples after experiments, the sterilization effect of sodium dichloroisocyanurate (NaDCC) tablets was assessed for use as a substitute for an autoclave. The addition of one tablet of NaDCC per 50 ml was sufficient to kill E. coli cultured in Colilert-18. These results show that the developed protocol and device can efficiently detect E. coli from agri-food production environments and vegetables.

Evaluation of Reinforcing Performance of Window Protection Device Against Strong Wind (강풍에 대비한 창호보호장치의 보강성능 평가)

  • Park, Won Bin;Kim, Hong Jin
    • Journal of the wind engineering institute of Korea
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    • v.22 no.4
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    • pp.155-161
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    • 2018
  • In modern society, damage caused by strong winds such as typhoons is expected to increase due to urbanization and global warming. In order to test the reinforcement performance of the newly developed window protection device, two-point force test and uniformly distributed load test were carried out on non-reinforced plate glass. It reinforcement performance of the window protection device was evaluated based on the flexural performance improvement. The analytical performance of the window protection device was evaluated by analysis using differential equations of elastic loading method and deflection curve and Midas-Gen. First, the analytical window protection device was evaluated by formulae derived using differential equations of elastic loading and deflection curve. The validity of the derived formulae investigated by comparing the maximum deflection of the central part of the plate with the experimental value and the theoretical value at maximum load. Then the results were compared with those by finite element FE method using Midas-Gen. Under the experimental conditions, with the window protection device, stress reduction effect up to 40% and deflection reduction up to 71.4% under the same load were obtained. It was also found that it is advantageous to perform the FE analysis using the plate element when the performance is evaluated because the error of FE analysis result using plate elements is far less than that using beam elements.

A Study on LVTSCR-Based N-Stack ESD Protection Device with Improved Electrical Characteristics (향상된 전기적 특성을 지닌 LVTSCR 기반의 N-Stack ESD 보호소자에 관한 연구)

  • Jin, Seung-Hoo;Woo, Je-Wook;Joung, Jang-Han;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.25 no.1
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    • pp.168-173
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    • 2021
  • In this paper, we propose a new structure of ESD protection device that achieves improved electrical characteristics through structural change of LVTSCR, which is a general ESD protection device. In addition, it applies N-Stack technology for optimized design in the ESD Design Window according to the required voltage application. The N-Well area additionally inserted in the existing LVTSCR structure provides an additional ESD discharge path by electrically connecting to the anode, which improves on-resistance and temperature characteristics. In addition, the short trigger path has a lower trigger voltage than the existing LVTSCR, so it has excellent snapback characteristics. In addition, Synopsys' T-CAD Simulator was used to verify the electrical characteristics of the proposed ESD protection device.

A Fundamental Research on the Safety Facilities of Railroad (철도 선로안전시설에 관한 기초연구)

  • Lee Seong-Won;Kim Seung-Hwan;Shin Seung-Kyo;Kim Tae-Wook
    • Proceedings of the KSR Conference
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    • 2005.05a
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    • pp.550-555
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    • 2005
  • In this research, safety requirements for guard rail, buffer stop, car stop scotch block, protection device, fire protection facilities, safety siding, escape facilities and inundation protection facilities are studied to establish a standard. First, various kinds of guard rails and their construction methods are investigated. Researches on the level difference of main track and guard rail, joint, length, and fastening force of guard rail are done. Second, the classification of buffer stop and car stop scotch block and its characteristics are examined, and the impact force, speed limit and capacity of buffer stop are summarized. Details of protection device, fire protection facilities, safety siding, escape facilities and inundation protection facilities are also investigated. From this fundamental research results, basic data on the safety facilities of railroad system are established.

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