• 전기전자학회논문지
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• 제10권2호통권19호
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• pp.141-148
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• 2006

In this study, the design of advanced LVDS(Low Voltage Differential Signaling) I/O interface circuit with new structural low triggering ESD (Electro-Static Discharge) protection circuit was investigated. Due to the differential transmission technique and low signal swing range, maximum transmission data ratio of designed LVDS transmitter was simulated to 5Gbps. And Zener Triggered SCR devices to protect the ESD Phenomenon were designed. This structure reduces the trigger voltage by making the zener junction between the lateral PNP and base of lateral NPN in SCR structure. The triggering voltage was simulated to 5.8V. Finally, The high speed I/O interface circuit with the low triggered ESD protection device in one-chip was designed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 A
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• pp.366-368
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• 2003

In this paper, a parametric evaluation method of protection ability is proposed. The adequacy of every parameter is evaluated for the setting rules. Then the results are combined to give protection level of a whole protective system. The setting rules are categorized into three groups for hierarchical calculation. The proposed scheme is applied to a location problem of a new protective device to show its effectiveness.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2003년도 추계학술대회 논문집(III)
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• pp.252-257
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• 2003

It is necessary to have a maintenance of track and its equipment for safety and s the railroad transportation. In the paper, we examine the safety problems, protecti and composition of protection system for safety within the track which RTRI develo system consists of a mobile business tool carried by each worker. a terminal of t platform temporarily installed in the maintenance car. a connector attached to signalling system and a central administrative device installed at the control cen used independently to detect positions of workers and maintenance cars. Each m correctly grasp the geometrical relations with other workers cars and other objects conditions based on the state information exchanged between the machines by the control protocol. the track occupancy monitor information broadcast by th administrative device and the line information. The protection system executes its f this basic structure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.140-141
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• 2006

Background doping concentration (BDC) is proven to be a critical factor to affect the high current behavior of the extended drain NMOSFET (EDNMOS) devices. The EDNMOS device with low BDC suffers from strong snapback in the high current region, which results in poor electrostatic discharge (ESD) protection performance and high latchup risk. However, the strong snapback can be avoided in the EDNMOS device with high BDC. This implies that both the good ESD protection performance and the latchup immunity can be realized in terms of the EDNMOS by properly controlling its BDC.

• Journal of Radiation Protection and Research
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• 제43권3호
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• pp.97-106
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• 2018

Background: A cargo container scanner using a high-energy X-ray generates a fan beam X-ray to acquire a transmitted image. Because the generated X-rays by LINAC may affect the image quality and radiation protection of the system, it is necessary to acquire accurate information about the generated X-ray beam distribution. In this paper, a diode-based multi-channel spatial dose measuring device for measuring the X-ray dose distribution developed for measuring the high energy X-ray beam distribution of the container scanner is described. Materials and Methods: The developed high-energy X-ray spatial dose distribution measuring device can measure the spatial distribution of X-rays using 128 diode-based X-ray sensors. And precise measurement of the beam distribution is possible through automatic positioning in the vertical and horizontal directions. The response characteristics of the measurement system were evaluated by comparing the signal gain difference of each pixel, response linearity according to X-ray incident dose change, evaluation of resolution, and measurement of two-dimensional spatial beam distribution. Results and Discussion: As a result, it was found that the difference between the maximum value and the minimum value of the response signal according to the incident position showed a difference of about 10%, and the response signal was linearly increased. And it has been confirmed that high-resolution and two-dimensional measurements are possible. Conclusion: The developed X-ray spatial dose measuring device was evaluated as suitable for dose measurement of high energy X-ray through confirmation of linearity of response signal, spatial uniformity, high resolution measuring ability and ability to measure spatial dose. We will perform precise measurement of the X-ray beamline in the container scanning system using the X-ray spatial dose distribution measuring device developed through this research.

• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권1호
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• pp.23-33
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• 2002

A hysteresis control is widely used to control output current of inverter. A hysteresis bandwidth is affected by system parameters such as source voltage, device on/off time, load inductance and resistance. The frequency limiter is used to protect switching devices overload. In the conventional hysteresis controller, a lock-out circuit with D-latch and timer is used to device protection circuit. But switching delay time and harmonic components are appeared in output current. In this paper the performance of lock-out circuit is tested, and new circuit for switching device fault protection is proposed ad it's performance is simulated.

• 전자공학회논문지D
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• 제34D권11호
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• pp.37-47
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• 1997

Utilizing 2-dimensional device simulations incorporating lattic eheating models, we analyzed in detail the DC breakdown characterisics of NMOS trasistors with different structures, which are commonly used as ESD protection transistors. The mechanism leading to device failure resulting from electrostatic discharge was explained by analyzing the 1st and 2nd breakdown characteristics of LDD devices. Also a criteria for more robust designs of NMOS transistor structures against ESD was suggested by examining the characteristics changes with changes in structural parameters such as the LDD doping concentration, the drain junction depth, the distance between source/drain contacts, and the source junction area.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.90-92
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• 2005

Lightning surge damages of low voltage equipments in building are increasing due to increase in electrical and communication networks in the information-oriented society. And electronic equipments contained electrical circuits with semiconductor are very weak against lightning surge. The surge protective devices for electronic circuit in electronic equipments and AC power lines are becoming more widely. To achieve effective method of surge protection, there are needs for correlation between lightning surge protective effect of electronic equipment and installation method of surge protective device. This paper describes as a result of experiments for correlation between lightning surge protective effect and installation of surge protective device and Earth Leakage Breaker.

• 전기학회논문지
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• 제62권2호
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• pp.190-195
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• 2013

Vacuum circuit breaker(VCB) has been widely used for interruption of load current and fault current for high voltage motor in the industrial field. Its arc extinguishing capability is excellent compared to other breakers. But it has the potential to cause multi reignition surge by high extinguishing capability. Surge voltage is generated by the opening and closing of VCB. Multi reignition surge of VCB is steep-fronted waveform. It may have a detrimental effect on the motor winding insulation. So, most of users install a protection device to limit steep-front waveform at the motor terminal or breaker side. So, most of users install a protection device at the motor terminal or breaker side. This protective device is surge absorber(SA) such as ZnO and RC type. In this study, we analyzed whether there is any effect when two type SA is applied to the VCB multi reignition surge. We confirmed that ZnO SA is slightly more effective than RC SA for reduction of multi reignition surge.

• 전기전자학회논문지
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• 제26권2호
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• pp.196-204
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• 2022

Electrostatic discharge (ESD) protection devices of P-type embedded silicon-controlled rectifier (PESCR) structure were analyzed for high-voltage operating input/output (I/O) applications. Conventional PESCR standard device exhibits typical SCR characteristics with very low-snapback holding voltages, resulting in latch-up problems during normal operation. However, the modified device with the counter pocket source (CPS) surrounding N⁺ source region and partially formed P-well (PPW) structures proposed in this study could improve latch-up immunity by indicating high on-resistance and snapback holding voltage.