• Title/Summary/Keyword: Protection Device

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A Study on SCR-based Dual Directional ESD Protection Device with High Holding Voltage by Self-Biasing Effect (Self-Biasing 효과로 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구)

  • Jung, Jang-Han;Jeong, Seung-Koo;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.119-123
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    • 2022
  • This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.

A Study on AC Modeling of the ESD Protection Devices (정전기 보호용 소자의 AC 모델링에 관한 연구)

  • Choi, Jin-Young
    • Journal of IKEEE
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    • v.8 no.1 s.14
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    • pp.136-144
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    • 2004
  • From the AC analysis results utilizing a two dimensional device simulator, the ac equivalent-circuit modeling of the ESD protection devices is executed. It is explained that the ac equivalent circuit of the NMOS protection transistor is modeled by a rather complicated form and that, depending on the frequency range, the error can be large if it is modeled by a simple RC serial circuit. It is also shown that the ac equivalent circuit of the thyristor-type pnpn protection device can be modeled by a simple RC serial circuit. Based on the circuit simulations utilizing the extracted equivalent circuits, the effects of the parasitics in the protection device on the characteristics of LNA are examined when the LNA, which is one of the important RF circuits, is equipped with the protection device. It is explained that a large error can result in estimating the circuit characteristics if the NMOS protection transistor is modeled by a simple capacitor. It is also confirmed that the degradation of the LNA characteristics by incorporating the ESD protection device can be reduced a lot by adopting the suggested pnpn device.

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Custom-Made ITE Type Hearing Protection Device Using a Small Acoustic Filter

  • Lee, Yun-Jung;Kim, Pil-Un;Jung, Young-Jin;Chang, Yong-Min;Cho, Jin-Ho;Kim, Myoung-Nam
    • Journal of Biomedical Engineering Research
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    • v.27 no.6
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    • pp.376-383
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    • 2006
  • Noise induced hearing loss (NIHS), the well-known occupational disease, is caused by continuous excessive noise. The prevention of NIHS is very important, because it is unrecoverable. There are some kinds of hearing protection device (HPD), and those are effective in preventing NIHS. But workers in noisy environment often resist to wearing them. Because they are ready - made products, so workers feel uncomfortable to wear. Also, they didn't maintain the conversation frequency range, so workers are hard to communicate in wearing them. To prevent hearing loss effectively, it is important that workers keep wearing HPD. Therefore, a HPD is needed to be comfortable to wear and be effective not only in hearing protection but also in preserving communication ability. So we proposed a custom - made hearing protection device in which a small acoustic filter is inserted. We designed several kinds of small acoustic filters and carried out some acoustic experiments for measuring characteristics of filters. We confirmed that acoustic transmission characteristic can be adjusted from experimental results using designed small acoustic filters. And we researched for the actual efficiency of a new developed custom - made hearing protection device using a small size acoustic filter. Also, we found out that workers are more satisfied with the new development than a former protection device from a workers' response.

A Study on the Short-circuit Protection System for Learning Teaching Instruction Using Incandescent Light Bulb (백열전구를 이용한 학습 교구용 단락보호장치에 대한 고찰)

  • Hong-yong Kim
    • Journal of the Society of Disaster Information
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    • v.19 no.4
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    • pp.844-850
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    • 2023
  • Purpose: This paper is about the development of a short-circuit protection power supply device using incandescent bulbs and its application for educational materials. This article, which considers electrical safety and energy conservation at the same time, has many kinds of potential applications for both educational and industrial areas. The above mentioned short-circuit protection power supply device using incandescent bulbs enhances safety and efficiency compared to normal current power supply devices. Additionally, as an educational materials, it can be used for electric safety training, and provides practical electrical safety knowledge on our actual life. Method: Using incandescent bulbs, design new type of short-circuit protection power supply device, and through verifying the function and safety of the device, make new type device, and applying it for an educational tool. Conclusion: This study is to develop new type of power supply device, and verify the possibility of the application for the device as an educational materials. Through this research, show an innovative solution, which contribute to electrical safety and energy conservation, and open the potential possibility on educational and industrial sectors.This kind of research is expected to contributes to enhanced research, and education on electrical safety and energy conservation management.

Study on Side Buffer & Overload Protection applied Local EMU (국내 전동차에 적용된 SIDE BUFER와 OVERLOAD PROTECTION의 고찰)

  • Hwang, Jin-Taek
    • Proceedings of the KSR Conference
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    • 2009.05a
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    • pp.695-701
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    • 2009
  • Side Buffer with Anti-Climber is absorber and anti climber during impact. The Overload Protection Device protects the car underframe from being damaged in case of release of the overload protection. In case of heavy impacts(60 ton), the load is converted into deformation energy by plastic deformation of the tear-off bolts This paper describes a study on this function applied for Side Buffer and Overload Protection Device.

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Properties evaluation for ESD Protection device of Diode type using TLP evaluation method (TLP 평가기법을 이용한 Diode type의 ESD 보호소자 특성 평가)

  • Lee, Tae-Il;Kim, Hong-Bae
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.4
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    • pp.53-57
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    • 2007
  • In paper, We evaluated for various diode type ESD protection device using TLP measurement method. An Evaluation diode is divided to Enclosed type and Stripe type as pattern style in extensive. These diodes is split up followed factor that Anode-to-Cathod space, N+ region width, Multi type and Contact to Active space. After a TLP measurement, we can be got the Vt2, It2 by I-V characteristic values. In the results, diode of enclosed type is present relatively higher Current capability(It2) than stripe type in a same voltage conditions. And the Second-breakdown voltage(Vt2) were that Stripe type's diode higher than Enclosed type's diode as have $14{\sim}15V$. Finally we suggest the best diode design condition as ESD protection device using entire consequence.

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Optimal Design of ESD Protection Device with different Channel Blocking Ion Implantation in the NSCR_PPS Device (NSCR_PPS 소자에서 채널차단 이온주입 변화에 따른 최적의 정전기보호소자 설계)

  • Seo, Yong-Jin;Yang, Jun-Won
    • Journal of Satellite, Information and Communications
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    • v.11 no.4
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    • pp.21-26
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    • 2016
  • The ESD(electrostatic discharge) protection performance of PPS(PMOS pass structure) embedded N-type silicon controlled rectifier(NSCR_PPS) device with different implant of channel blocking region was discussed for high voltage I/O applications. A conventional NSCR standard device shows low on-resistance, low snapback holding voltage and low thermal breakdown voltage, which may cause latch-up problem during normal operation. However, our proposed NSCR_PPS devices with modified channel blocking structure demonstrate the improved ESD protection performance as a function of channel implant variation. Therefore, the channel blocking implant was a important parameter. Since the modified device with CPS_PDr+HNF structure satisfied the design window, we confirmed the applicable possibility as a ESD protection device for high voltage operating microchips.

Study on Pedestrian Protection device in collision using Pneumatic cylinder and simple link mechanism (공압 실린더 및 단순 링크기구를 이용한 충돌 보행자 보호 장치에 관한 연구)

  • Noh, S.H.;Lee, D.R.
    • Journal of Power System Engineering
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    • v.12 no.4
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    • pp.64-71
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    • 2008
  • This study is on pedestrian protection device using pneumatic cylinder and simple link mechanism when vehicle collide with pedestrian. This study ensured the safety space between engine and hood after it applies to simple link mechanism and pneumatic cylinder. It can absorb the damage which measure the specific device if vehicle collide with pedestrian. Combination of simple link mechanism and pneumatic cylinder was more superior than the present pedestrian protection device. Simple link mechanism could confirm superior height and survival probability than when only cylinder operated. It also ensured enough space between engine and hood. And if a cylinder is not working because of old cylinder, poor repair or damage of accident vertical cylinder would be difficult to execute because there exists the irregular space between engine and hood. If simple link mechanism operates with only one cylinder it could ensure the regular space because simple link mechanism set up at the middle of hood. So this device could confirm high safety for pedestrian.

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Passive Transient Voltage Suppression Devices for 42-Volt Automotive Electrical Systems

  • Shen, Z.John
    • Journal of Power Electronics
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    • v.2 no.3
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    • pp.171-180
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    • 2002
  • New 42-volt automotive electrical systems can provide significant improvements in vehicle performance and fuel economy. It is crucial to provide protection against load dump and other overvoltage transients in 42-volt systems. While advanced active control techniques are generally considered capable of providing such protection, the use of passive transient voltage suppression (TVS) devices as a secondary or supplementary protection means can significantly improve design flexibility and reduce system costs. This paper examines the needs and options for passive TVS devices for 42-volt applications. The limitations of the commonly available automotive TVS devices, such as Zener diodes and metal oxide varistors (MOV), are analyzed and reviewed. A new TVS device concept, based on power MOSFET and thin-film polycrystalline silicon back-to-back diode technology, is proposed to provide a better control on the clamp voltage and meet the new 42-volt specification. Both experimental and modeling results are presented. Issues related to the temperature dependence and energy absorbing capability of the new TVS device are discussed in detail. It is concluded that the proposed TVS device provides a cost-effective solution for load dump protection in 42-volt systems.

Analysis of the Protective Distance of Low-Voltage Surge Protective Device(SPD) to Equipment (저압용 서지 보호 장치(SPD)의 보호 거리 해석)

  • Lee, Jung-Woo;Oh, Yong-Taek
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.4
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    • pp.28-34
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    • 2012
  • Installing surge protection devices for a low-voltage system is important to ensure the survival of electric or electronic devices and systems. If surge protection devices (SPD) are installed without consideration of the concept of lightning protection zones, the equipment to be protected might be damaged despite the correct energy coordination of SPDs. This damage is induced by the reflection phenomena on the cable connecting an external SPD and the load protected. These reflection phenomena depend on the characteristics of the output of the external SPD, the input of the loads, and the cables between the load and the external SPD. Therefore, the SPD has an effective protection distance under the condition of the specific load and the specific voltage protection level of SPD. In this paper, PSCAD/EMTDC software is used to simulate the residual voltage characteristics of SPD Entering the low-voltage device. And by applying a certain voltage level, the effective protection distances of SPD were analyzed according to the each load and length of connecting cable, and the effectiveness of SPD were verified.