• Title/Summary/Keyword: Programmable metallization cell

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Solid Electrolytes Characteristics Based on Cu-Ge-Se for Analysis of Programmable Metallization Cell

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Transactions on Electrical and Electronic Materials
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    • v.9 no.6
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    • pp.227-230
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    • 2008
  • Programmable Metallization Cell (PMC) Random Access Memory is based on the electrochemical growth and removal of electrical nanoscale pathways in thin films of solid electrolytes. In this study, we investigated the nature of thin films formed by the photo doping of copper ions into chalcogenide materials for use in programmable metallization cell devices. These devices rely on metal ions transport in the film so produced to create electrically programmable resistance states. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

Characteristics research of Cu-doped Programmable Metallization Cell (Cu를 도핑시킨 Programmable Metallization Cell의 특성연구)

  • Nam, Ki-Hyun;Ju, Long-Yun;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1289-1290
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    • 2008
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigate the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Properties on Annealing of Chalcogenide Materials at Programmable Metallization Cell (Programmable Metallization Cell에서 칼코게나이드 물질의 열처리에 따른 특성)

  • Choi, Hyuk;Kim, Hyun-Gu;Nam, Ki-Hyun;Ju, Long-Yun;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.164-164
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    • 2007
  • Photodiffusion of silver into chalcogenide thin film is one of the most interesting effects that occurs in chalcogenide glass as it theatrically changes the properties of the initial material and forms a ternary. Programmable Metallization Cell(PMC) Randon Access Memory use for photodiffusion of mobile metal is based on the electrochemical growth and removal of nanoscale metallic pathway in thin film of solid electrolyte. This paper investigates the annling properties on Ag-doped $Ge_{25}Se_{75}$ thin film structure and describes the electrical characteristics of PMC-RAM. The composition of the intercalation products containing Ag is confirmed using X-ray diffraction which shows the formation of Ag-doped $Ge_{25}Se_{75}$.

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Properties on Electrical Resistance Change of Ag-doped Chalcogenide Thin Films Application for Programmable Metallization Cell (Programmable Metallization Cell 응용을 위한 Ag-doped 칼코게나이드 박막의 전기적 저항 변화 특성)

  • Choi, Hyuk;Koo, Sang-Mo;Cho, Won-Ju;Lee, Young-Hie;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.12
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    • pp.1022-1026
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30 nm and 50 nm respectively, device have excellent characteristics.

Electrical and Optical Properties on Thickness of Ag and Chalcogenide Thin Films at Programmable Metallization Cell Device (Programmable Metallization Cell(PMC) 소자에서 Ag와 칼코게나이드 박막의 두께에 따른 전기적 광학적 특성)

  • Choi, Hyuk;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.24-24
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated chalcogenide glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. In this paper, we investigated electrical and optical properties of Ag-doped chalcogenide thin film on changed thickness of Ag and chalcogenide thin films, which is concerned at Ag-doping effect of PMC cell. As a result, when thickness of Ag and chalcogenide thin film was 30nm and 50nm respectively, device have excellent characteristics.

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The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell (Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성)

  • Nam, Ki-Hyun;Koo, Sang-Mo;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.86-87
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    • 2008
  • In this study, we studied the nature of thin films formed by photodoping chalcogenide materials with for use in programmable metallization cell devices, a type of ReRAM. We investigated the resistance of Ag-doped chalcogenide thin films varied in the applied voltage bias direction from about 1 M$\Omega$ to several hundreds of $\Omega$. As a result of these resistance change effects, it was found that these effects agreed with PMC-RAM. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from the chalcogenide materials.

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The Solid-electrolyte Characteristics of Ag-doped Germanium Selenide for Manufacturing of Programmable Metallization Cell (Programmable Metallization Cell 제작을 위한 Ag-doped Germanium Selenide의 고체전해질 특성)

  • Nam, Ki-Hyun;Chung, Hong-Bay
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.22 no.5
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    • pp.382-385
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    • 2009
  • In this study, we studied switching characteristics of germanium selenide(Ge-Se)/silver(Ag) contact formed by photodoping for use in programmable metallization cell devices. We have been investigated the switching characteristics of Ag-doped chalcogenide thin films. Changed resistance range by direction of applied voltage is about $1\;M{\Omega}$ $\sim$ hundreds of $\Omega$. The cause of these resistance change can be thought the same phenomenon such as resistance variation of PMC-RAM. The results imply that the separated Ag-ions react the atoms or defects in chalcogenide thin films.

Cu-doped Programmable Metallization Cell의 스위칭 특성 연구

  • Nam, Gi-Hyeon;Jeong, Hong-Bae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.11a
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    • pp.57-57
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    • 2009
  • Programmable Metallization Cell (PMC) is a memory device based on the electrolytical characteristic of chalcogenide materials. We investigated the nature of thin films formed by photo doping of Cu ions into chalcogenide materials for use in solid electrolyte of PMC. We were able to do more economical approach by using copper which play an electrolyte ions role. The results imply that a Cu-rich phase separates owing to the reaction of Cu with free atoms from chalcogenide materials.

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Ge-Se 이원계 화합물을 이용한 ReRAM 스위칭 특성 분석에 관한 연구

  • Nam, Gi-Hyeon;Kim, Jang-Han;Jeong, Hong-Bae
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.137-137
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    • 2011
  • Programmable Metallization Cell (PMC) is a ReRAM device based on the electrolytical characteristic of chalcogenide materials. In this study, we investigated the nature of thin films formed by photo doping of Ag+ ions into chalcogenide materials for use in solid electrolyte of programmable metallization cell devices. We were able to do more economical approach by using Ag+ ions which play an electrolyte ions role. The results imply that a Ag-rich phase separates owing to the reaction of Ag with free atoms from chalcogenide materials.

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A Study on Ag-doping in Chalocogenide Thin Films Application for Programmable Metallization Cell (PMC(Programmable Metallization Cell) 응용을 위한 칼코게나이드 박막에서의 Ag-doping에 관한 연구)

  • Choi, Hyuk;Nam, Ki-Hyun;Ju, Yong-Woon;Lee, Yung-Hie;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
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    • 2007.07a
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    • pp.1325-1326
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    • 2007
  • We have demonstrated new functionalities of Ag doped chalcogenide glasses based on their capabilities as solid electrolytes. Formation of such amorphous systems by the introduction of silver via photo-induced diffusion in thin chalcogenide films is considered. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics and Ag saturation is related to the composition of the hosting material. Silver saturated is related to the composition of the hosting material. Silver saturated Ge-Ch glasses have been used in the formation of solid electrolyte which is the active medium in programmable metallization cell (PMC) devices. This paper concerns our more recent work on silver-doped germanium selenide electrolytes and describes the electrical characteristics of PMC devices made from these materials following annealing at $300^{\circ}C$.

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