• Journal of the Semiconductor & Display Technology
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• 제22권3호
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• pp.8-13
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• 2023

High bandwidth memory a core technology of the future memory semiconductor industry, is attracting attention. Temporary bonding and debonding process technology, which plays an important role in high bandwidth memory process technology, is also being studied. In this process, total thickness variation is a major factor determining wafer performance. In this study, the reliability of the equipment measuring total thickness variation is identified, and the servo motor settling, and wafer total thickness variation measurement accuracy are analyzed. As for the experimental variables, vacuum, acceleration time, and speed are changed to find the most efficient value by comparing the stabilization time. The smaller the vacuum and the larger the radius, the longer the settling time. If the radius is small, high-speed rotation performance is good, and if the radius is large, low-speed rotation performance is good. In the future, we plan to conduct an experiment to measure the entire of the wafer.

• Korean Journal of Cognitive Science
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• 제33권1호
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• pp.23-50
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• 2022

Source memory is a cognitive process that combines the representation of the origin of the episodic experience with an item. By studying this daily process, researchers have made fundamental discoveries that make up the foundation of brain and behavior research, such as executive function and binding. In this paper, we review and conduct a bibliometric analysis on source memory papers published from 1989 to 2020. This review is based on keyword co-occurrence networks and author citation networks, providing an in-depth overview of the development of source memory research and future directions. This bibliometric analysis discovers a change in the research trends: while research prior to 2010 focused on individuality of source memory as a cognitive function, more recent papers focus more on the implication of source memory as it pertains to connectivity between disparate brain regions and to social neuroscience. Keyword network analysis shows that aging and executive function are continued topics of interest, although frameworks in which they are viewed have shifted to include developmental psychology and meta memory. The use of theories and models provided by source memory research seem essential for the future development of cognitive enhancement tools within and outside of the field of Psychology.

• Korean Journal of Cognitive Science
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• 제19권3호
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• pp.311-330
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• 2008

The effect of spatial attention gradually decreases as a function of the distance between the locus of attention and a target. According to this hypothesis, we tested the spatial-effect profile of visual attention when it operates on perception and memory. Experiment 1 measured accuracy of discriminating the color of a simultaneously masked target after presenting a pre-cue to either at the target location or away from the target (perception-intensive task). Experiment 2 measured accuracy of recognizing the color of several items at and around the pre-cued location (memory-intensive task). In the perception-intensive condition, the accuracy gradually dropped as the distance between the cue and target location increases. However, in the memory-intensive condition, subjects remembered only the item at the cued location. This suggests spatial attention in a memory-intensive process would operate on object-based representations. Experiment 2 showed the object-based effect observed in Experiment 1 can be also present in perception under a special circumstance. The results indicate that spatial attention can operate on object-based representations in a memory-intensive process whereas it flexibly can operate either on location-based or object-based representations in a perception-intensive process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제28권5호
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• pp.285-290
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• 2015

The phase change memory material is an active element in phase change memory and exhibits reversible phase transition behavior by thermal energy input. The doping of the phase change memory material with Ga leads to the increase of its crystallization temperature and the improvement of its amorphous stability. In this study, we investigated the effect of GaGe sputtering power on the formation of the phase change memory material including Ga. The deposition rate linearly increased to a maximum of 127 nm and the surface roughness remained uniform as the GaGe sputtering power increased in the range from 0 to 75 W. The Ga concentration in the thin film material abruptly increased at the critical sputtering power of 60 W. This influence of GaGe sputtering power was confirmed to result from a combined sputtering-evaporation process of Ga occurring due to the low melting point of Ga ($29.77^{\circ}C$).

• Proceedings of the Korean Operations and Management Science Society Conference
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• 한국경영과학회 1999년도 추계학술대회 및 정기총회 : 정보통신기술의 활용과 21세기 전자상거래
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• pp.42-46
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• 1999

Knowledge management(KM) is emerging as a robust management mechanism with which an organization can remain highly intelligent and competitive in a turbulent market. Organization memory(or knowledge) is at the heart of KM success. How to create organizational memory has been debated among researchers. In literature, a wide variety of methods for creating organizational memory have been proposed only to prove that its applicability is limited to decision-making problems which require shallow or non-causal knowledge type. However, organizational memory with a sense of causal knowledge is highly required in solving complicated decision-making problems in which complex dynamics exist between various factors and influence each other with cause and effect relationship among them. In this respect, we propose a new approach to creating a causal-typed organizational memory (CATOM), which has a form of causal knowledge and is represented in a matrix form, by using an inference diagram. An algorithm for CATOM creation is suggested and applied to an illustrative example. Results show that our proposed KM approach can effectively equip an organization with semi-automated CATOM creation and inference process which is deemed useful in a highly competitive business environment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.32-35
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• 2002

The work focuses on the development of a Cu lead-frame with a single-sided adhesive tape for cost reduction and reliability improvement of LOC (lead on chip) package products, which are widely used for the plastic-encapsulation of memory chips. Most of memory chips are assembled by the LOC packaging process where the top surface of the chip is directly attached to the area of the lead-frame with a double-sided adhesive tape. However, since the lower adhesive layer of the double-sided adhesive tape reveals the disparity in the coefficient of thermal expansion from the silicon chip by more than 20 times, it often causes thermal displacement-induced damage of the IC pattern on the active chip surface during the reliability test. So, in order to solve these problems, in the resent work, the double-sided adhesive tape is replaced by a single-sided adhesive tape. The single-sided adhesive tape does net include the lower adhesive layer but instead, uses adhesive materials, which are filled in clear holes of the base film, just for the attachment of the lead-frame to the top surface of the memory chip. Since thermal expansion of the adhesive materials can be accommodated by the base film, memory product packaged using the lead-flame with the single-sided adhesive tape is shown to have much improved reliability. Author allied this invention to the Korea Patent Office for a patent (4-2000-00097-9).

• Proceedings of the Korean Vacuum Society Conference
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.9-9
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• 2011

There has been strong demand for novel nonvolatile memory technology for low-cost, large-area, and low-power flexible electronics applications. Resistive memories based on metal oxide thin films have been extensively studied for application as next-generation nonvolatile memory devices. However, although the metal oxide-based resistive memories have several advantages, such as good scalability, low-power consumption, and fast switching speed, their application to large-area flexible substrates has been limited due to their material characteristics and necessity of a high-temperature fabrication process. As a promising nonvolatile memory technology for large-area flexible applications, we present a graphene oxide-based memory that can be easily fabricated using a room temperature spin-casting method on flexible substrates and has reliable memory performance in terms of retention and endurance. The microscopic origin of the bipolar resistive switching behaviour was elucidated and is attributed to rupture and formation of conducting filaments at the top amorphous interface layer formed between the graphene oxide film and the top Al metal electrode, via high-resolution transmission electron microscopy and in situ x-ray photoemission spectroscopy. This work provides an important step for developing understanding of the fundamental physics of bipolar resistive switching in graphene oxide films, for the application to future flexible electronics.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2000년도 ITC-CSCC -1
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• pp.429-432
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• 2000

The new MPEG-4 video coding standard enables content-based functionalities. In order to support the philosophy of the MPEG-4 visual standard, each frame of video sequences should be represented in terms of video object planes (VOP’s). In other words, video objects to be encoded in still pictures or video sequences should be prepared before the encoding process starts. Therefore, it requires a prior decomposition of sequences into VOP’s so that each VOP represents a moving object. A parallel processing system is required an automatic segmentation to be processed in real-time, because an automatic segmentation is time consuming. This paper addresses the parallel processing: system for an automatic segmentation for separating moving object from the background in image sequences. The proposed parallel processing system comprises of processing elements (PE’s) and a multi-access memory system (MAMS). Multi-access memory system is a memory controller to perform parallel memory access with the variety of types: horizontal, vertical, and block access way. In order to realize these ways, a multi-access memory system consists of a memory module selection module, data routing modules, and an address calculation and routing module. The proposed system is simulated and evaluated by the CADENCE Verilog-XL hardware simulation package.

• The Journal of the Korea institute of electronic communication sciences
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• 제10권2호
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• pp.275-282
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• 2015

Since a NAND-flash memory is able to keep data during electricity-off and has small cost to store data per bytes, it is widely used on hand-held devices. It is necessary to use an index in order to process mass data effectively on the flash memory. However, since the flash memory requires high cost for a write operation and does not support an overwrite operation, it is possible to reduce the performance of the index when the disk based index is exploited. In this paper, we implement the fixed grid file index and evaluate the performance of the index on various conditions. To do this, we measure the average processing time by the ratio of query operations and update operations. We also the compare the processing times of the flash memory with those of the magnetic disk.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.15-16
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• 2005

Chalcogenide phase change memory has high performance to be next generation memory, because it is a nonvolatile memory processing high programming speed, low programming voltage, high sensing margin, low consumption and long cycle duration. We have developed a new material of PRAM with $Ge_1Se_1Te_2$. This material has been propose to solve the high energy consumption and high programming current. We have investigated the phase transition behaviors in function of various process factor including contact size, cell size, and annealing time. As a result, we have observed that programming voltage and writing current of $Ge_1Se_1Te_2$ are more improved than $Ge_2Sb_2Te_5$ material.