• Proceedings of the Korea Association of Crystal Growth Conference
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• 1998.06a
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• pp.149-156
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• 1998

In this work, aiming at improvement of growth processes for the bulk GaAs single crystals, efforts have been made first in investigate thermodynamic properties of the Ga and As system and second to suggest that bulk GaAs crystals could be grown in principle with the single temperature zone only by determining the excess arsenic charge as a function of growth conditions. During crystal growth, this will be evaporized inside the growth chamber to induce the required inner pressure, instead of aesenic vapor pressure in the double temperature zone method, so as to be in equilibrium with the method, growth experiments have been prepared and carried out for dopes and undoped GaAs crystals with the newly built Bridgman system which was designed according to this principle. To compare the results to those of the double temperature zone method, the same numbers of GaAs crystals have been grown with both processes and all of them were characterized in single crystallinity, lattice defects and electrical properties. Especially, the relationship between growth conditions and crystal quality was discussed from the viewpoint of growth peculiarities with this method.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2008.05a
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• pp.115-118
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• 2008

Many theoretical and experimental studies have been conducted to investigate elements of the hydrodynamic process, such as variations in liquid film thickness or air core diameter. From these studies, some theoretical relationships have been established through an approximated analytical solution of flow hydrodynamics in a swirl nozzle. However, experimental studies on elements such as internal flow have not produced conclusive results. In this study, the variations and stability of the internal flow were examined by visualizing the air core and measuring the liquid film thickness.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.870-873
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• 2003

We have fabricated a carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size by using screen printing method and vacuum in-line sealing technology. The sealing temperature of the panel was around 390 $^{\circ}C$ and the leak test was carried out for 72 hrs after sealing process. When field emission properties of fabricated and sealed CNT FED panel were characterized and compared with those of unsealed panel which was located in vacuum chamber of vacuum level similar with the sealed panel, the sealed panel showed more improved field emission properties.

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.03b
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• pp.17-17
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• 2010

Polycrystalline $CuInS_2$ thin films were performed from S/In/Cu Stacked elemental layer(SEL) method with post annealing. In thin method, the thin films were annealed in Vacuum of $10^{-3}$ torr or in S ambient. $CuInS_2$ thin films were manufctured by using the evaporation and the annealing with vacuum quartz furnace of sulfurization process was used in the vacuum chamber to the substrate temperature on the glass substrate the annealing temperature and characteristics thereof were investigated. The physical properties of the thin film were investigated under various fabrication conditions including the substrate temperature annealing time by XRD, FE-SEM, and Hall measurement system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.552-557
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• 2012

In this study, we have coated the inner surface of YSZ channel using LSM powder ink through depressurization process for making the cathode of a stacked planar-type SOFC module. To coat the surface of YSZ channel uniformly, we tried to find the optimum manufacturing condition for LSM ink. We used four different dispersants (BYK series) and two different solvents (ethanol and DMF) to make the LSM ink. It was revealed that the ink made with the ethanol solvent and the BYK-111 dispersant has the lowest viscosity, relatively low contact angle and most excellent dispersibility. After depressurizing a chamber filled with LSM ink and sintered YSZ channel, we have found that the YSZ channel was uniformly coated with LSM cathode. The LSM ink with 25 vol% BYK-111 showed the most uniform coating.

• IEIE Transactions on Smart Processing and Computing
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• v.2 no.1
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• pp.11-19
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• 2013

A video-zoom driven audio-zoom algorithm is proposed to provide audio zooming effects according to the degree of video-zoom. The proposed algorithm is designed based on a super-directive beamformer operating with a 4-channel microphone array in conjunction with a soft masking process that uses the phase differences between microphones. The audio-zoom processed signal is obtained by multiplying the audio gain derived from the video-zoom level by the masked signal. The proposed algorithm is then implemented on a portable digital imaging device with a clock speed of 600 MHz after different levels of optimization, such as algorithmic level, C-code and memory optimization. As a result, the processing time of the proposed audio-zoom algorithm occupies 14.6% or less of the clock speed of the device. The performance evaluation conducted in a semi-anechoic chamber shows that the signals from the front direction can be amplified by approximately 10 dB compared to the other directions.

• Journal of Environmental Science International
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• v.18 no.11
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• pp.1283-1289
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• 2009

Eco-physiological research and the control of Cochlodinium polykrikoides was carried out to elucidate eco-physiological characteristics of red tide organism through culture experiment depending on the condition of photon irradiance. Oxygen consumption of C. polykrikoides was high with a value of 1.12 mg/L/hr in the dark compared with that of 0.13 mg/L/hr at $100{\mu}mEm^{-2}s^{-1}$. DO values in a circular chamber with the lapse of time in seawater containing C. polykrikoides were declined in the dark period. DO values of seawater containing C. polykrikoides in the dark were declined from 7.01 mg/L to 2.65 mg/L in 30 cm depth and from 7.01 mg/L to 6.63 mg/L in 5 cm depth depending on the depth of circular culture vessel. Olive flounder, Paralichthys olivaceus and file fish, Stephanolepis cirrhifer exposed to Cochlodinium showed the separation of the lamella epithelium from gill filament, which disrupted the respiratory process at the gill level.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.3
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• pp.205-212
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• 2002

The growth characteristics of metal-organic chemical vapor deposition (MOCVD) $Pb(Zr_xTi_{1-x})O_3 (PZT) thin films were investigated for the application of high-density ferroelectric random access memories (FRAM) devices beyond 64Mbit density. The supply control of Pb precursor plays the most critical role in order to achieve a reliable process for PZT thin film deposition. We have monitored the changes in the microstructure and electrical properties of films on increasing the Pb precursor supply into the reaction chamber. Under optimized conditions, $Ir/IrO_2/PZT(100nm)/Ir capacitor shows well-saturated hysteresis loops with a remanent polarization (Pr) of $~28{\mu}C/textrm{cm}^2$ and coercive voltage of 0.8V at 2.5V. Other issues such as step coverage, compositional uniformity and low temperature deposition was discussed in viewpoint of actual device application.

• Journal of Advanced Marine Engineering and Technology
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• v.18 no.1
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• pp.81-91
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• 1994

Combustion noise involved with chemical heat release and turbulent process in turbopropulsion systems, gasturbine, industrial furnaces and internal engines is indeed noisy. The experimental study reported in this paper is made to identify a dominant combustion noise in jet flames. Gaseous propane and kerosene fuel have been used with air as the oxidizer in a different jet combustion systems. Combustion and aerodynamic noise are studied through far field sound pressure measurements in an anechoic chamber. And also mean temperature and velocities and turbulent intensities of both isothermal and reacting flow fields were measured. It is shown that axial mean velocity of reacting flow fields is higher about 1 to 3m/sec than that of cold flow in a gaseous combustor. As the gaseous fuel flow rate increases, the acoustic power increases. But the sound pressure level for the spray flame decreases with increasing equivalence ratio. The influence of temperature in the combustion fields due to chemical heat release has been observed to be a dominant noise source in the spray flame. The spectra of combustion noise in gaseous propane and kerosene jet flame show a predominantly low frequency and a broadband nature as compared with the noise characteristics in an isothermal air jet.