• 제목/요약/키워드: Process Parameter

검색결과 3,067건 처리시간 0.026초

Effects of the Grinding Conditions on the Machining Elasticity Parameter

  • Kim, Kang
    • International Journal of Precision Engineering and Manufacturing
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    • 제4권3호
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    • pp.62-67
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    • 2003
  • The grinding force generated during the grinding process causes an elastic deformation of the workpiece, grinding wheel, and machine system. Thus, the true depth of cut is always smaller than the apparent depth of cut. This is known as machining elasticity phenomenon. The machining elasticity parameter is defined as a ratio between the true depth of cut and the apparent depth of cut. It is an important factor to understand the material removal mechanism of the grinding process. To increase productivity, the value of this machining elasticity parameter must be large. Therefore, it is essential to know the characteristics of this parameter. The objective of this research is to study the effect of the major grinding conditions, such as table speed, depth of cut, on this parameter experimentally, Through this research, it is found that this parameter value is increasing when the table speed is decreasing or the depth of cut is increasing. Also, this parameter value depends on the grinding mode (up grinding, down grinding).

원자력발전소 PID 공정제어기에 대한 튜닝 최적화 방법 (A Method of Tuning Optimization for PID Controller in Nuclear Power Plants)

  • 성찬호;민문기
    • 한국압력기기공학회 논문집
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    • 제10권1호
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    • pp.1-6
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    • 2014
  • PID(Proportional, Integral, Derivative) controller is one of the most used process controllers in nuclear power plants. The optimized parameter setting of process controller contributes to the stable operation and efficiency in the operating nuclear power plants. PID parameter setting is tuned when new process control system is established or process control system is changed. It is a burdensome work for I&C(Instrument and Control) engineers to tune the PID controller because it requires a lot of experience and knowledge. When the plant is in operation, inadequate PID parameter setting can be the cause of the unstable process of the plant. Therefore the results of PID parameter setting should be compared, simulated, verified and finally optimized. The practical PID tuning methods used in process controller are tuning operation calculation(Ziegler-Nicholes, Minimum TIAE, Lambda, IMC), exclusive tuning program based on computer and Matlab application. This paper introduces the various tuning methods and suggests an optimized PID tuning process in the operating nuclear power plants.

DTC에 의한 MOSFET의 공정 및 소자특성에 관한 연구 (A Study on Process and Characteristics of nMOSFET by DTC Method)

  • 류찬형;신희갑;이철인;서용진;김태형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1995년도 추계학술대회 논문집
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    • pp.236-239
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    • 1995
  • In short channel MOSFET, it is very important to establish optimal process conditions because of variation of devise characteristics due to the process parameters. In this paper, we used process simulator and device simulator in order to optimize process parameter which changes of the device characteristics caused by process parameter variation. From this simulation, it has been derived to the dependence relations between process parameter and device characteristics. The experimental results of fabricated short channel device according to the optimal process parameters demonstrate good device characteristics.

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잡음 ARMA 프로세스의 적응 매개변수추정 (Adaptive Parameter Estimation for Noisy ARMA Process)

  • 김석주;이기철;박종근
    • 대한전기학회논문지
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    • 제39권4호
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    • pp.380-385
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    • 1990
  • This Paper presents a general algorithm for the parameter estimation of an antoregressive moving average process observed in additive white noise. The algorithm is based on the Gauss-Newton recursive prediction error method. For the parameter estimation, the output measurement is modelled as an innovation process using the spectral factorization, so that noise free RPE ARMA estimation can be used. Using apriori known properties leads to algorithm with smaller computation and better accuracy be the parsimony principle. Computer simulation examples show the effectiveness of the proposed algorithm.

전자기 리니어 액츄에이터의 집중매개변수 모델링 및 해석 (Lumped Parameter Modeling and Analysis of Electromagnetic Linear Actuator)

  • 장재환;조성진;김진호
    • 한국기계가공학회지
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    • 제15권5호
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    • pp.18-24
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    • 2016
  • An electromagnetic linear actuator is controlled precisely and securely and is useful in devices that require linear motion. The most commonly used method in the performance verification process for an electromagnetic actuator is finite element analysis that utilizes CAE. However, finite element analysis has the disadvantage that modeling and analysis consume a lot of time. Accordingly, lumped parameter analysis can be an alternative approach to the finite element method because of its computation iteration capability with fair accuracy. In this paper, the lumped parameter model and simulation results are presented. In addition, the results of the lumped parameter analysis are compared with those obtained from finite element analysis for verification.

A Weak Convergence of the Linear Random Field Generated by Associated Randomvariables ℤ2

  • Kim, Tae-Sung;Ko, Mi-Hwa;Kim, Hyun-Chull
    • Communications for Statistical Applications and Methods
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    • 제15권6호
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    • pp.959-967
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    • 2008
  • In this paper we show the weak convergence of the linear random(multistochastic process) field generated by identically distributed 2-parameter array of associated random variables. Our result extends the result in Newman and Wright (1982) to the linear 2-parameter processes as well as the result in Kim and Ko (2003) to the 2-parameter case.

다결정 실리콘 박막 트랜지스터에서 공정 파라미터에 따른 전기적 특성의 모델링 (Modeling of Electrical Characteristics in Poly Silicon Thin Film Transistor with Process Parameter)

  • 정은식;최영식;이용재
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.201-204
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    • 2001
  • In this paper, for modeling of electrical characteristics in Poly Silicon Thin Film Transistors with process parameters set up optimum values. So, the I-V characteristics of poly silicon TFT parameters are examined and simulated in terms of the variations in process parameter. And these results compared and analyzed simulation values with examination value. The simulation program for characteristic analysis used SUPREM IV for processing, Matlab for modeling by mathematics, and SPICE for electric characteristic of devices. Input parameter for simulation characteristics is like condition of device process sequence, these electric characteristic of I$_{D}$-V$_{D}$, I$_{D}$-V$_{G}$, variations of grain size. The Gate oxide thickness of poly silicon are showed similar results between real device characteristics and simulation characteristics.ristics.

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동적 모수를 사용한 EWMA 제어의 시뮬레이션 연구 (A Simulation study of EWMA control using dynamic control parameter)

  • 강석찬;황지빈;김성식;김지현
    • 한국시뮬레이션학회논문지
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    • 제16권2호
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    • pp.37-44
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    • 2007
  • EWMA(지수가중평균)을 사용한 제어 방법은 반도체 제조 공정의 런투런 제어 환경에서 사용되는 대표적인 제어 방법이다. EWMA 제어에서는 제어 모수 값의 선택이 제어 결과에 주된 영향을 미치기 때문에, 공정 상황에 적합한 제어 모수 값을 사용하는 것이 중요하다. 불안정적인 공정 상황에서는 변화하는 공정 상황에 적합한 값으로 EWMA 제어 모수를 동적으로 변경하면서 제어해 주는 것이 고정된 모수 값을 사용하는 EWMA 제어에 비해 효율적이다. 본 연구에서는 동적인 EWMA 제어 모수를 사용한 기존 연구들을 살펴보고 이들의 단점을 보완한 새로운 알고리즘을 제시하며, 시뮬레이션을 통해 우수한 수행 결과를 확인하였다.

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서브마이크론 MOSFET의 파라메터 추출 및 소자 특성 (1)

  • 서용진;장의구
    • E2M - 전기 전자와 첨단 소재
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    • 제7권2호
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    • pp.107-116
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    • 1994
  • In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

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AN AVERAGE OF SURFACES AS FUNCTIONS IN THE TWO-PARAMETER WIENER SPACE FOR A PROBABILISTIC 3D SHAPE MODEL

  • Kim, Jeong-Gyoo
    • 대한수학회보
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    • 제57권3호
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    • pp.751-762
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    • 2020
  • We define the average of a set of continuous functions of two variables (surfaces) using the structure of the two-parameter Wiener space that constitutes a probability space. The average of a sample set in the two-parameter Wiener space is defined employing the two-parameter Wiener process, which provides the concept of distribution over the two-parameter Wiener space. The average defined in our work, called an average function, also turns out to be a continuous function which is very desirable. It is proved that the average function also lies within the range of the sample set. The average function can be applied to model 3D shapes, which are regarded as their boundaries (surfaces), and serve as the average shape of them.