• 접착 및 계면
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• 제4권4호
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• pp.7-14
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• 2003

택(tack)은 아주 가벼운 힘으로 단시간에 피착체와 점착하는 능력이다. 택의 측정기기 중 프로브택(probe tack)은 실험적인 영향인자를 설정할 수 있기에 택의 이론적 고찰이 유리하다. SIS계 핫멜트형 점착제(SIS-based hotmelt PSA)와 수분산성 아크릴 점착제(Water-borne acrylic PSA)를 사용하여 probe가 점착제 표면에 다가가는 속도가 택에 미치는 영향을 살펴보았다.

• 한국음향학회지
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• 제29권6호
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• pp.355-364
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• 2010

초음파 진단장치의 음향출력 특성은 전기음향 변환 장치인 배열 탐침자의 성능에 크게 영향을 받으며, 생물학적안전 측면에서 매우 중요하다. 본 논문에서는 초음파 진단장치용 배열 탐침자로부터 방사되는 음향파워를 소자별로 측정할 수 있는 자동화 시스템을 구성하였으며, 곡선형 탐침자의 경우 각 소자의 지향성이 측정에 미치는 영향을 확인하고 이를 보정하는 기법을 개발하였다. 선형, 위상형, 곡선형 배열 탐침자를 대상으로 음향파워 측정결과, 본 논문에서 제시하는 측정기법은 배열 탐침자의 음향파워 특성을 평가하는데 적합함을 확인하였다.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2003년도 추계학술대회
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• pp.1448-1452
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• 2003

A scratch tester was developed to evaluate the adhesive strength at interface between thin-film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the tangential forces simultaneously as the probe tip of the equipment approaches to the interface between thin-film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ${\sim}$ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester, the feasibility test was performed to evaluate the adhesive strength of thin-film.

• 한국정밀공학회지
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• 제15권3호
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• pp.99-106
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• 1998

Recently, scientists introduced a new type of microscope capable of investigating nonconducting surfaces in an atomic scale, which is called AFM (Atomic Force Microscope). It was an innovative attempt to overcome the limitation of STM (Scanning Tunnelling Microscope) which has been able to obtain the image of conducting surfaces. Surfaces of samples are imaged with atomic resolution. The AFM is an imaging tool or a profiler with unprecedented 3-D resolution for various surface types. The AFM technology, however, leaves a lot of room for improvement due to its delicate and fragile probing mechanism. One of the room for improvements is gap control between probe tip and sample surface. Distance between probe tip and sample surface must be kept in below one Angtrom in order to measure the sample surface in Angstrom resolution. In this paper, AFM system modeling, experimental system identification and control scheme based on system identification are performed and finally sample surface is measured by home-built AFM with such a control scheme.

• 제어로봇시스템학회논문지
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• 제3권3호
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• pp.323-331
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• 1997

A new probing mechanism and an active compliance control algorithm have been developed for the in-circuit test of a PCB( printed circuit board ). Commercially available robotic probing devices are incapable of controlling contact force generated through rigid probe contacts with a solder joint, at high speed. The uncontrollable excessive contact force often brungs about some defects on the surface of the solder joint, which is plastically deformable over some limited contact force. This force also makes unstable contact motions resulting in unreliable test data. To overcome these problems, we propose that a serially connected macro and micro device with active compliance provide the best potential for a safe and reliable in-circuit test. This paper describes the design characteristics, modeling and control scheme of the newly proposed device. The experimental results clearly show the effectiveness of the proposed system.

• Tribology and Lubricants
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• 제30권4호
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• pp.218-223
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• 2014

This paper presents a method of controlling the stiffness of a tungsten probe for an atomic force microscope (AFM) in order to provide high-quality phase contrast images in accordance with sample characteristics. While inducing sufficient deformation on sample surfaces with commercial Si or $Si_3N_4$ probes is difficult because of their low stiffness, a tungsten probe fabricated by electrochemical etching with appropriately high stiffness can generate relatively large elastic deformation without damaging sample surfaces. The fabrication of the tungsten probe involves two separate procedures. The first procedure involves immersing a tungsten wire with both ends bent parallel to the surface of an electrolyte and controlling the stiffness of the tungsten cantilever by decreasing its diameter using electrochemical etching in the direction of the central axis. The second procedure involves immersing the end of the etched tungsten cantilever in the direction perpendicular to the surface of the electrolyte and fabricating a tungsten tip with a tip radius of 20-50 nm via the necking phenomenon. The latter etching process applies pulse waves every 0.25 seconds to the manufactured tip to improve its yield. Finite element analysis (FEA) of the stiffness of the tungsten probe as a function of its diameter showed that the stiffness of the tungsten probes greatly varies from 56 N/m to 3501 N/m according to the cantilever diameters from $30{\mu}m$ to $100{\mu}m$, respectively. Thus, the proposed etching method is effective for producing a tungsten probe having specific stiffness for optimal use with an AFM and certain samples.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.559-559
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• 2012

We developed a new scheme for the highly sensitive near-field scanning optical microscope (NSOM) by using a dithering sample stage rather than a dithering probe. In the proposed scheme, the sample is directly loaded on one prong surface of a dithering bare tuning fork. Gap control between probe and sample is performed by detecting the shear force between an immobile fiber probe and the dithering sample. In a conventional NSOM, the Q factor drastically decreases from 7783 to 1000 or even to 100 by attaching a probe to the tuning fork. In our proposed NSOM, on the contrary, the Q factor does not change significantly, 7783 to 7480, when the sample is loaded directly to the tuning fork instead of attaching a probe. Consequently, the graphene sheets that cannot be observed by a conventional NSOM were clearly observed by the proposed method with sub-nanometer vertical resolution due to the extremely high Q factor.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• 한국공작기계학회논문집
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• 제15권3호
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• pp.82-90
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• 2006

Recently the electrostatic 2-axis MEMS stages have been fabricated for the purpose of an application to PSD (Probe-based Storage Device). However, all of the components(platform, comb electrodes, springs, anchors, etc.) in those stages are placed in-plane so that they have low areal efficienceis, which is undesirable as data storage devices. In this paper, we present a novel structure of an electrostatic 2-axis MEMS stage that is characterized by having large area platform. for obtaining large area efficiency, the actuator part consisting of mainly comb electrodes and springs is placed right below the platform. The structure and operational principle of the MEMS stage are described, followed by a design procedure, structural and modal analyses using FEM(Finite Element Method). The areal efficiency of the MEMS stage was designed to be about 25%, which is very large compared with the conventional ones having a few percentage.

• 정보저장시스템학회논문집
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• 제3권2호
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• pp.73-80
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• 2007

Atomic Force Microscopy (AFM)방식을 이용한 Scanning probe Data Storage (SDS) 시스템은 array cantilever 를 이용하여 나노 단위로 데이터 읽기, 쓰기를 하는 시스템이다. 따라서 미디어가 있는 stage 의 x 축과 y 축 및 두 축간 coupling 을 고려한 제어기 설계가 요구된다. 본 논문은 SDS 시스템의 축간 coupling 을 고려하지 않은 기존의 제안된 LQG 에 PI 를 추가한 제어기 구조를 사용한다. 두 축간 coupling 공진의 영향을 최소화 하기 위해 convex optimization 으로 설계된 최적의 position profile를 기준 입력신호로 사용한다. 제안된 제어기를 SDS 시스템에 적용하여 모의실험을 하고 그 결과 position profile 로 인해 각 축간 coupling 공진 영향이 감소하여 tracking performance 가 기존의 LQG 제어기 보다 향상된 것을 확인한다.