• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.2
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• pp.43-47
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• 2003

Lead zirconate titanate (PZT) thin films were fabricated by the pulsed laser ablation deposition (PLAD) method onto Pt/Ti/SiO$_2$/Si substrates. Crystalline phases as well as preferred orientations in PZT films were investigated by X-ray diffraction analysis (XRD). The well-crystallized perovskite phase and the (101) preferred orientation were obtained by two-step annealing at the conditions of $650^{\circ}C$, 1 hour. It was found that the temperature for the pulsed laser ablated PZT films annealed via a two-step annealing process can be reduced 20$0^{\circ}C$ compared to that of the conventional three-step annealing temperature profile for enhancing the transformation of the perovskite phase. The remanent polarization and the coercive field of this film were about 20 $\mu$C/$\textrm{cm}^2$ and 46 kV/cm, while the dielectric constant and loss values measured at 1 KHz were approximately 860 and 0.04, respectively. The interesting phenomena of this film, such as vertical shift in hysteresis curve, are also discussed.

• Electrical & Electronic Materials
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• v.9 no.2
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• pp.196-203
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• 1996

The highly c-axis oriented zinc oxide thin films were deposited on Sapphire(0001) substrates by reactive RF magnetron sputtering. The characteristics of zinc oxide thin films on RF power, substrate-target distance, and substrate temperature were investigated by XRD, SEM and EDX analyses. The physical characteristics of zinc oxide thin films changed with various deposition conditions. The higher substrate temperatures were, The better crystallinity of zinc oxide thin films. The highly c-axis oriented zinc oxide thin films were obtained at sputter pressure 5mTorr, rf power 200W, substrate temperature 350.deg. C, substrate-target distance 5.5cm. In these conditions, the resistivity of zinc oxide thin films deposited on pt/sapphire was 12.196*10$^{9}$ [.ohm.cm].

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.131-136
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• 2005

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.

• Journal of the Korean institute of surface engineering
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• v.36 no.2
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• pp.141-147
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• 2003

Silicon carbide thin film was deposited in APCVD and LPCVD system with 1,3-DSB precursor 1,3-DSB is the single precursor to deposit SiC on Si at low temperature. SiC film was deposited at $850^{\circ}C$ lower than ordinary temperature ($1000~1200^{\circ}C$) in CVD process. SiC thin film glowed to high oriented (111) plane in APCVD system. In LPCVD system, SiC film groved to preferred (220) plane at same temperature. This discrepancy between preferred planes can be described by the difference of deposition mechanism. Amorphous phase and crystal defect were observed in APCVD system with the main growth mechanism of mass transport limited region. But in LPCVD system, we got the SIC film of uniform, faceted structure and high quality.

• Korean Journal of Materials Research
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• v.27 no.2
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• pp.69-75
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• 2017

To establish low-temperature process conditions, process-property correlation has been investigated for Ga-doped ZnO (GZO) thin films deposited by pulsed DC magnetron sputtering. Thickness of GZO films and deposition temperature were varied from 50 to 500 nm and from room temperature to $250^{\circ}C$, respectively. Electrical properties of the GZO films initially improved with increase of temperature to $150^{\circ}C$, but deteriorated subsequently with further increase of the temperature. At lower temperatures, the electrical properties improved with increasing thickness; however, at higher temperatures, increasing thickness resulted in deteriorated electrical properties. Such changes in electrical properties were correlated to the microstructural evolution, which is dependent on the deposition temperature and the film thickness. While the GZO films had c-axis preferred orientation due to preferred nucleation, structural disordering with increasing deposition temperature and film thickness promoted grain growth with a-axis orientation. Consequently, it was possible to obtain a good electrical property at relatively low deposition temperature with small thickness.

• Science of Emotion and Sensibility
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• v.9 no.4
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• pp.353-366
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• 2006

The aim of this study is to characterize the optical properties of white light-emitting diodes lighting modules and then to evaluate the sensitivity of students and teachers in reacting to the optical properties of these modules. For the sake of this study, each of 5 lighting modules was introduced to the 5 test cabinets. The 5 test cabinets were evaluated and analyzed the student and teacher's sensitivity reaction. We have selected If questions on sensitivity of the lighting and evaluated these questions with semantic differential method. To verify the reliability and objectivity of the questions, the feasibility survey was carried out by a preliminary test. As a result of the test, the sensitivities on the test cabinets were classified the 4 factors, namely, activity as the first factor, stability as the second one , potency as the third one and sensitive image as the fourth one respectively. By the evaluation of student and teacher's sensitivity on the correlated color temperature, they preferred the cabinet with the higher color temperature in view of the activity and potency. And they preferred the cabinet with the lower color temperature in view of the stability factor. In the sensitive image, they preferred the 5800K, bluish white lighting regardless of the color temperature. By the evaluation on the color rendering index, they preferred the cabinet with the higher color rendering index in view of the activity, stability and sensitive image. In the potency factor, they preferred the white lighting with the middle color rendering index.

• Journal of Fashion Business
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• v.3 no.2
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• pp.31-36
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• 1999

This study is to examine personal color - preferred color, well-matched color and the relations between preferred color and the well-matched color. Focus is also placed on how sexual difference influences color temperature preference. For data collection, a questionnaire including color stimulus was employed. The subjects of this study were the male and female college students who lived in Pusan. The results of the research are summarized as the following : In view of preferred color, male subjects preferred KEY2 color(warm) in red, pink, and yellow, and preferred KEY1(cool) in green and blue. While most subjects showed the same signal, in green, male preferred KEY1 color and female preferred KEY2 color. Concerning preferred personal color type, KEY1 type person liked KEY1 color except red, and KEY2 type person liked KEY2 color except blue. This shows that people prefer the focused color presenting its own traits. In view of well-matched color, most subjects liked KEY2 color in red, yellow, pink, and they selected KEY1 color in blue as the well-matched color. However, in green, each sex showed different preferences; while male subjects selected KEY1 color as the well-matched color, female ones selected KEY2 color. In each personal color type, KEY1 type male evaluated KEY1 color as the well-matched color, KEY2 type male evaluated KEY2 color except blue. KEY1 type female chose all the KEY1 color as well-matched colors, and KEY2 type female chose KEY2 color. The well-matched colors are similar between male and female subjects. In over 80 percentage of the answers, the preferred colors coincided with well-matched colors. KEY1 type persons chose KEY1 color, and KEY2 type person chose KEY2 color as the well-matched color. These results show that there is a meaningful relationship between the preferred color and well-matched color.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.88-92
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• 2003

In this paper, the characteristics of the ZnO films deposited on AI bottom electrode and the temperature effects on the ZnO film growth are presented along with the fabrication and their evaluation of the film bulk acoustic wave resonator (FBAR) devices. All the films used in this work were deposited using a radio-frequency (RF) magnetron sputtering technique. Growth characteristics of the ZnO films are shown to have a strong dependence on the deposition temperatures ranged from room temperature to 35$0^{\circ}C$ regardless of the RF power applied for sputtering the ZnO target. In addition, according to the growth characteristics of the distinguishably different micro-crystal structures and the degree of the c-axis preferred orientation, the deposition temperatures can be divided into 3 temperature regions and 2 critical temperatures in-between. Overall, the ZnO films deposited at/below 20$0^{\circ}C$ are seen to have columnar grains with a highly preferred c-axis orientation where the full width at half maximum (FWHM) of X-ray diffraction rocking curve is 14$^{\circ}$. Based on the experimental findings, several FBAR devices were fabricated and measured. As a result, the FBAR devices show return loss of ~19.5dB at resonant frequency of ~2.05GHz.

• Nuclear Engineering and Technology
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• v.29 no.6
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• pp.488-499
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• 1997

The measurements of the moderator temperature coefficient (MTC) are performed to demonstrate that the calculational model produces results that are consistent with the measurements. Since negative MTC is also a technical specification value that may limit the cycle length, it is important to measure it as accurately as possible. In this report, preferred choice of test method depending on the time in cycle, best power indication and temperature definition in MTC calculation were determined based on the MTC test results taken during initial startup testing and at 2/3 cycle burnup in the Yonggwang nuclear power plant. The results show that the ratio and rodded methods provided good agreement with the predictions during initial startup testing. However, near end-of-cycle the depletion method gives better results, and so is suggested to be used in the MTC measurements at 2/3 cycle burnup. The use of primary Delta T power as a power indicator in the MTC calculations is highly advisable since it responds with good consistent results very quickly to changes unlike secondary calorimetric power. For the appropriate temperature definitions used in the MTC calculations, it is considered that the arithmetic average temperature measured simply by inlet and outlet thermocouples is preferred. Although volumetric average temperature provides better results, the improvement is not sufficient to compensate for the simplicity of calculations by arithmetic average temperature.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.89-92
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• 2005

The AIN/AI thin films were prepared at various conditions, such as $N_2$ gas flow rate [$N_2(N_2+Ar)$] from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AIN/AI thin films as function of AI electrode surface roughness. The optimal processing conditions for AI electrode were found at substrate temperature of $300^{\circ}C$ sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AIN/AI/SiO_2/Si$ thin film about 4 degree.