• 제목/요약/키워드: Precursor

검색결과 3,462건 처리시간 0.032초

MOCVD Deposition of AlN Thin Film for Packaging Materials

  • Chang-Kyu, Ahna;Seung-Chul Choi;Seong-Hoon Cho;Sung-Hwan Han;Je-Hong Kyoung
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2000년도 Proceedings of 5th International Joint Symposium on Microeletronics and Packaging
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    • pp.118-118
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    • 2000
  • New single-source precursor, [AlCI3:NH2tBu] was synthesized for AlN thin f film processing with AICI3 (Aluminum Chloride) and tBuNH2 (tert-butylamine). AlN thin films for packaging aspplication were deposited on sapphire substrate by a atmosph하ie-pressure MOCVD. In most of other study methyl-based AI precursors w were used for source, But herein Aluminum Chloride was used for as AI source i in order to prevent the carbon contamination in the films and stabilize the p precursor. New precursor showed the very high gas vapor pressure so it allowed to m make the film under atmospheric-pressure and get the high purified film. High q quality AlN thin film was obtained at 700 to $900^{\circ}C$. The new precursor was p purified by a sublimation technique and help to fabricate high purity film. It s showed high vapor pressure, which is able to a critieal factor for the high purity a and atmospheric CVD of AlN. High Quality AIN thin film was obtained at $700-900^{\circ}C$. The AIN film was characterized by RBS

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탄탈륨 질화물(Ta3N5)의 적색도 향상에 미치는 NH4Cl의 영향 (Effect of By-product (NH4Cl) on the Improvement of the Red Color Tone of Tantalum Nitride (Ta3N5))

  • 박은영;피재환;김유진;조우석
    • 한국세라믹학회지
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    • 제46권6호
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    • pp.583-586
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    • 2009
  • The Tantalum nitride has attracted wide at attention as issues related to the toxicity of Cd-related materials. But in the titration process of Ta$Cl_5$ solution with $NH_4$OH, $NH_4$Cl, as a by product, was remained in the prepared Tantalum precursor. The tantalum precursor with $NH_4$Cl was nitrided by ammonolysis. The red color tone of $Ta_3N_5$ was reduced by the residual $NH_4$Cl reduce. Therefore, amorphous Tantalum precursor was prepared by filtering process with as hydrous ethanol to remove the $NH_4$Cl. In the case of using Tantalum precursor without $NH_4$Cl, we successfully synthesized the Tantalum nitride with good red color. The value of red color tone was improved from $a^*$=36.8 to $a^*$=53.0. The synthesized powder was characterized by XRD, SEM, the Nitrogen / Oxygen Determinator, TG-DTA, and the CIE $L^*a^*b^*$ colorimeter.

플라즈마 유기금속 화학증착을 이용한 지르코니아 박막제조 (fabrication of Zirconia Thin Films by Plasma Enhanced Metal-Organic Chemical Vapor Deposition)

  • 김기동;조영아;신동근;전진석;최동수;박종진
    • 한국재료학회지
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    • 제9권2호
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    • pp.155-162
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    • 1999
  • Zirconia thin films of uniform structure were fabricated by plasma-enhanced metal-organic chemical vapor deposition. Deposition conditions such as substrate temperature were observed to have much influence on the formation of zirconia films, therefore the mechanism of decomposition of $Zr[TMHD]_4$precursor and film growth were examined by XRD, FT-IR etc., as well as the determination of the optimal deposition condition. From temperature dependence on zirconia, below the deposition temperature of 523K, the amorphous zirconia was formed while the crystalline of zirconia with preferred orientation of cubic (200) was obtained above the temperature. Deposits at low temperatures were investigated by FT-IR and the absorption band of films revealed that the zirconia thin film was in amorphous structure and has the same organic band as that of Zr precursor. In case of high temperature, it was found that Zr precursor was completely decomposed and crystalline zirconia was obtained. In addition, at 623K the higher RF power yielded the increased crystallinity of zirconia implying an increase in decomposition rate of precursor. However, it seems that RF power has nothing with the zirconia deposition process at 773K. It was found that the proper bubbler temperature of TEX>$Zr[TMHD]<_4$ precursor is needed along with high flow rate of carrier gas. Through AFM analysis it was determined that the growth mechanism of the zirconia thin film showed island model.

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A Systematic Proteome Study of Seed Storage Proteins from Two Soybean Genotypes

  • Cho, Seong-Woo;Kwon, Soo-Jeong;Roy, Swapan Kumar;Kim, Hong-Sig;Lee, Chul-Won;Woo, Sun Hee
    • 한국작물학회지
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    • 제59권3호
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    • pp.359-363
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    • 2014
  • Soybean seed is a good source of plant protein in human consumables such as baby formula and protein concentrate. The seeds contain an abundance of storage proteins, namely ${\beta}$-conglycin and glycinin that account for ~ 70-80% of the total seed protein content. Proteome profiling has been proved to be an efficient way that can help us to investigate the seed storage proteins. In the present study, the seeds were removed from the pods and the cotylendonary tissues were separated from the testa for proteome analysis in order to investigate the seed storage proteins. A systematic proteome profiling was conducted through one-dimensional gel electrophoresis followed by MALDI-TOF-TOF mass spectrometry in the seeds (cotyledonary tissue) of soybean genotypes. Two dimensional gels stained with CBB, a total of 10 proteins were identified and analyzed using MASCOT search engine according to the similarity of sequences with previously characterized proteins along with the UniProt database. A total of ten proteins such as glycinin Gy4 precursor, glycinin G3 precursor, glycinin G1 precursor, glycinin chain A2B1a precursor, glycinin chain A2B1a precursor were identified in our investigation. However, the glycinin subunit may be considered to play important roles in soybean breeding and biochemical characterization. In addition, the improved technique will be useful to dissect the genetic control of glycinin expression in soybean.

Amorphous Citrate Precursor 법으로 제조한 La0.6Ca0.4CoO3와 Pb2Ru2O6의 전기화학적 촉매능 (Electrocatalytic Performances of La0.6Ca0.4CoO3 and Pb2Ru2O6 prepared by Amorphous Citrate Precursor Method)

  • 이철경;손헌준
    • 공업화학
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    • 제10권3호
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    • pp.331-335
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    • 1999
  • 진이급속 산화물은 전기화학적 산소 발생/환원에 대한 bifunctional 촉매효과가 있어 금속-공기 이차전지와 같은 에너지 저장기술 개발에 연구대상이 되어왔다. Amorphous citrate precursor법을 이용하여 perovskite 구조를 갖는 La-Ca-Co 산화물과 pyrochlore 구조를 갖는 Pb-Ru 산화물을 제조하고, 이후 열처리법으로 표면적이 큰 전이금속 산화물 촉매분말을 제조하였다. PTFE 결합 기체확산형 전극의 충방전 실험을 통하여 전기화학적 산소발생/환원에 대한 좋은 촉매능을 가짐을 확인하였고, ${\pm}25mA/cm^2$의 전류밀도를 가하고 공기를 공급하면서 충방전 실험한 결과 100시간 이내에서 두촉매분말 모두 안정하였다. ACP법으로 제조한 perovskite 구조의 La0.6Ca0.4CoO3과 pyrochlore 구조의 Pb2Ru2O6가 이차전지용 공기전극 재료로 사용할 수 있음을 확인하였다.

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Cu2In3, CuGa, Cu2Se를 이용한 전구체박막을 셀렌화하여 제조한 Cu(In,Ga)Se2 박막의 미세구조 및 농도분포 변화 (Microstructure and Compositional Distribution of Selenized Cu(In,Ga)Se2 Thin Film Utilizing Cu2In3, CuGa and Cu2Se)

  • 이종철;정광선;안병태
    • 한국재료학회지
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    • 제21권10호
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    • pp.550-555
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    • 2011
  • A high-quality CIGS film with a selenization process needs to be developed for low-cost and large-scale production. In this study, we used $Cu_2In_3$, CuGa and $Cu_2Se$ sputter targets for the deposition of a precursor. The precursor deposited by sputtering was selenized in Se vapor. The precursor layer deposited by the co-sputtering of $Cu_2In_3$, CuGa and $Cu_2Se$ showed a uniform distribution of Cu, In, Ga, and Se throughout the layer with Cu, In, CuIn, CuGa and $Cu_2Se$ phases. After selenization at $550^{\circ}C$ for 30 min, the CIGS film showed a double-layer microstructure with a large-grained top layer and a small-grained bottom layer. In the AES depth profile, In was found to have accumulated near the surface while Cu had accumulated in the middle of the CIGS film. By adding a Cu-In-Ga interlayer between the co-sputtered precursor layer and the Mo film and adding a thin $Cu_2Se$ layer onto the co-sputtered precursor layer, large CIGS grains throughout the film were produced. However, the Cu accumulated in the middle of CIGS film in this case as well. By supplying In, Ga and Se to the CIGS film, a uniform distribution of Cu, In, Ga and Se was achieved in the middle of the CIGS film.

Amyloid Precursor Protein Binding Protein-1 Is Up-regulated in Brains of Tg2576 Mice

  • Yang, Hyun-Jung;Joo, Yu-Young;Hong, Bo-Hyun;Ha, Sung-Ji;Woo, Ran-Sook;Lee, Sang-Hyung;Suh, Yoo-Hun;Kim, Hye-Sun
    • The Korean Journal of Physiology and Pharmacology
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    • 제14권4호
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    • pp.229-233
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    • 2010
  • Amyloid precursor protein binding protein-1 (APP-BP1) binds to the carboxyl terminus of amyloid precursor protein and serves as a bipartite activation enzyme for the ubiquitin-like protein, NEDD8. Previously, it has been reported that APP-BP1 rescues the cell cycle S-M checkpoint defect in Ts41 hamster cells, that this rescue is dependent on the interaction of APP-BP1 with hUba3. The exogenous expression of APP-BP1 in neurons has been reported to cause DNA synthesis and apoptosis via a signaling pathway that is dependent on APP-BP1 binding to APP. These results suggest that APP-BP1 overexpression contributes to neurodegeneration. In the present study, we explored whether APP-BP1 expression was altered in the brains of Tg2576 mice, which is an animal model of Alzheimer's disease. APP-BP1 was found to be up-regulated in the hippocampus and cortex of 12 month-old Tg2576 mice compared to age-matched wild-type mice. In addition, APP-BP1 knockdown by siRNA treatment reduced cullin-1 neddylation in fetal neural stem cells, suggesting that APP-BP1 plays a role in cell cycle progression in the cells. Collectively, these results suggest that increased expression of APP-BP1, which has a role in cell cycle progression in neuronal cells, contributes to the pathogenesis of Alzheimer's disease.

Production and Purification of Single Chain Human Insulin Precursors with Various Fusion Peptides

  • Cho, Chung-Woo;Park, Sun-Ho;Nam, Doo-Hyun
    • Biotechnology and Bioprocess Engineering:BBE
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    • 제6권2호
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    • pp.144-149
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    • 2001
  • For the production and purification of a single chain human insulin precursor, four types of fusion peptides $\beta$-galactosidase (LacZ), maltose binding protein (MBP), glutathione-S-transferase (GST), and (His)(sub)6-tagged sequence (HTS) were investigated. Recombinant E. coli harboring hybrid genes was cultivated at 37$\^{C}$ for 1h, and gene induction occurred when 0.2mM of isopropyl-D-thiogalactoside (IPTG) was added to the culture broth, except for E. coli BL21 (DE3) pLysS harboring a pET-BA cultivation with 1.0mM IPTG, followed by a longer than 4h batch fermentation respectively. DEAE-Sphacel and Sephadex G-200 gel filtration chromatography, amylose affinity chromatography, glutathione-sepharose 4B affinity chromatography, and a nickel chelating affinity chromatography system as a kind of immobilized metal ion affinity chromatography (IMAC) were all employed for the purification of a single chain human insulin precursor. The recovery yields of the HTS-fused, GST-fused, MBP-fused, and LacZ-fused single chain human insulin precursors resulted in 47%, 20%, 20%, and 18% as the total protein amounts respectively. These results show that a higher recovery yield of the finally purified recombinant peptides was achieved when affinity column chromatography was employed and when the fused peptide had a smaller molecular weight. In addition the pET expression system gave the highest productivity of a fused insulin precursor due to a two-step regulation of the gene expression, and the HTS-fused system provided the highest recovery of a fused insulin precursor based on a simple and specific separation using the IMAC technique.

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중성리간드(L)가 (hfac)Cu(I)L 전구체의 특성 및 구리 MOCVD 공정에 미치는 영향 (Effect of Neutral Ligand(L) on the Precursor Characteristics of (hfac)Cu(I)L and on Cu MOCVD Process)

  • 최경근;김경원;이시우
    • 한국재료학회지
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    • 제11권3호
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    • pp.184-184
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    • 2001
  • (hfac)Cu(I)L구리 1가 전구체의 경우 L의 종류에 따라 여러 화합물이 존재하며 L이 전구체의 특성 및 증착에 미치는 영향을 규명하였다. 이때 중성리간드는 ATMS(allytrimethylsilane), VTMS(vinyltri-methylsilane), VCH(vinylcyclohexane), MP (4-methyl-1-pentene), ACP(allylcyclopentane), DMB (3,3-dimethyl-1-butene) 등의 alkene류이었다 hfacCu(I)L 전구체는 TG-DSC 분석에서 관찰된 Cu(I)-L 분해 온도가 낮으면 $100^{\circ}C$ 이하의 저온 증착이 가능하였고 저온에서 낮은 박막 비저항 값을 얻을 수 있었다. 또한 이 분해온도가 높은 전구체 일수록 열적으로 안정함을 일정 시간 가열평가를 통해 알 수 있었다. 약 $125~175^{\circ}C$ 증착온도에서는 중성리간드의 종류에 무관하게 증착된 구리 박막의 비저항값이 거의 비슷하였고 약 $226^{\circ}C$ 이상의 증착온도에서는 박막의 비저항이 중성리간드의 분자량의 크기에 비례하여 증가하였다. 전구체의 증기압은 중성리간드의 끓는점과 가장 밀접한 관계가 있으며 중성리간드의 끓는점이 낮으면 낮을수록 증기압은 높았다.

중성리간드(L)가 (hfac)Cu(I)L 전구체의 특성 및 구리 MOCVD 공정에 미치는 영향 (Effect of Neutral Ligand(L) on the Precursor Characteristics of (hfac)Cu(I)L and on Cu MOCVD Process)

  • 최경근;김경원;이시우
    • 한국재료학회지
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    • 제11권3호
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    • pp.185-190
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    • 2001
  • (hfac)Cu(I)L구리 1가 전구체의 경우 L의 종류에 따라 여러 화합물이 존재하며 L이 전구체의 특성 및 증착에 미치는 영향을 규명하였다. 이때 중성리간드는 ATMS(allytrimethylsilane), VTMS(vinyltri-methylsilane), VCH(vinylcyclohexane), MP (4-methyl-1-pentene), ACP(allylcyclopentane), DMB (3,3-dimethyl-1-butene) 등의 alkene류이었다 hfacCu(I)L 전구체는 TG-DSC 분석에서 관찰된 Cu(I)-L 분해 온도가 낮으면 $100^{\circ}C$ 이하의 저온 증착이 가능하였고 저온에서 낮은 박막 비저항 값을 얻을 수 있었다. 또한 이 분해온도가 높은 전구체 일수록 열적으로 안정함을 일정 시간 가열평가를 통해 알 수 있었다. 약 $125~175^{\circ}C$ 증착온도에서는 중성리간드의 종류에 무관하게 증착된 구리 박막의 비저항값이 거의 비슷하였고 약 $226^{\circ}C$ 이상의 증착온도에서는 박막의 비저항이 중성리간드의 분자량의 크기에 비례하여 증가하였다. 전구체의 증기압은 중성리간드의 끓는점과 가장 밀접한 관계가 있으며 중성리간드의 끓는점이 낮으면 낮을수록 증기압은 높았다.

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