• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.59-59
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• 1999

DLC(diamond-like carbon)필름은 다이아몬드와 유사한 강도, 낮은 마차계수, 높은 Optical band gap, NEA(negative electron affinity)등의 우수한 특성을 가지고 있어, 내마모 코팅이나 정보저장 매체의 윤활 코팅, FED(field emission display)의 전계방출소자등 다양한 분야에의 응용이 연구되고 있다. DLC 필름은 PECVD(plasma enhanced chemical vapor deposition), IBAD(ion beam assisted deposition), Laser ablation, Cathodic vacuum arc등의 process를 이용하여 증착되고 있다. 특히 이러한 필름의 물성은 입사되는 이온의 에너지에 의해 좌우되는데, Lifshitz 등의 연구에 의하여 hyperthermal species를 이용한 DLC 필름의 성장은 초기에 subsurface로의 shallow implantation이 일어난 후 높은 sp3 fraction을 갖는 필름이 연속적으로 성장한다는 subplantation model이 제시 되었다. 본 연구에서는 기판과 subplantation 영역이 이후 계속하여 증착되는 순수 DLC 필름의 특성 변호에 미치는 영향에 대하여 관심을 가지고 실험을 행하였다. 본 실험에서는 상기 제시되어 있는 방법보다도 더욱 정확하고도 독립적으로 탄소 음이온의 에너지와 flux를 조절할 수 있는 Cs+ ion beam sputtering system을 이용하여 탄소 음이온의 에너지를 40eV에서 200eV까지 변화시키며 필름을 증착하였다. Si(100) 웨이퍼를 기판으로 사용하였고 증착 압력은 5$\times$10-7torr 였으며 인위적인 기판의 가열은 하지 않았다. 또한 Ion beam deposited DLC film의 growth process를 연구하기 위하여 200eV의 탄소 음이온을 시간(증착두께)을 변수로 하여 증착하였고, 이 때에는 Kaufman type의 gas ion beam을 이용하여 500eV의 Ar+ ion으로 pre-sputering을 행하였다. 탄소 음이온의 에너지와 증착두께에 따라 증착된 film 내의 sp3/sp2 ratio 의 변화를 XPS plasmon loss 와 Raman spectra를 이용하여 분석하였다. 또한 증착두께에 따른 interlayer의 결합상태를 관찰하기 위하여 AES와 XPS 분석을 보조로 행하였다.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.472-476
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• 2007

In this study, we investigated methods for p-type ZnO deposition as well as stability enhancement of its properties. The film was prepared by co-depositing AlAs and ZnO in a RF magnetron sputtering system. Property variation was monitored with photoluminescence and Hall measurements by stressing the films at $250^{\circ}C$ for various duration upto 144 hours. Results indicated that co-deposition is a useful method for p-type ZnO preparation. In particular, pre-treatment in 30% $H_2O_2$ for 1min was observed to be effective in reducing the property variation taking place during the subsequent high temperature processes.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.21 no.6
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• pp.915-919
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• 2012

In constructing all kinds of equipment and steel structure, parts with discontinuities such as weld defects formed in the welded structure can generate fatigue cracks that results in damage or accidents. In this study, weld zones are investigated with X-rays and the latent images are put on film. Weld zone defects can be verified by developing the film. As weld defects are investigated by radiographic testing and correlated with the welding condition, more appropriate welding conditions can be found. According to the result of X-ray radiographic inspection of butt welding ATOS 80 high-strength steel with a thickness of 12mm, the best conditions for welding without creating weld defects are 4 weld-passes, a protective gas of 20% $CO_2$ and 80% Ar, a protective gas flow of 20L/min, a welding current of 200A, an arc voltage of 24V, a welding speed of 14.4cm/min, a welding rod angle of $50^{\circ}$, a welding gap of 5 mm with a ceramic base, and sand pre-heating to $160^{\circ}$ Celsius prior to welding.

• Journal of Electrochemical Science and Technology
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• v.7 no.4
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• pp.277-285
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• 2016

There is a growing demand for simple, cost-effective, and accurate analytical tools to determine the concentrations of biological and environmental compounds. In this study, a stable electroactive thin film of cobalt hexacyanoferrate (Cohcf) was prepared as an in situ chemical precipitant using electrostatic adsorption of $Co^{2+}$ on a silicate sol-gel matrix (SSG)-modified indium tin oxide electrode pre-adsorbed with $[Fe(CN)_6]^{3-}$ ions. The modified electrode was characterized by scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy, and electrochemical techniques. Electrocatalytic oxidation of hydrazine on the modified electrode was studied. An electrochemical sensor for hydrazine was constructed on the SSG-Cohcf-modified electrode. The oxidation peak currents showed a linear relationship with the hydrazine concentration. This study provides insight into the in situ growth and stability behavior of Cohcf nanostructures and has implications for the design and development of advanced electrode materials for fuel cells and sensor applications.

• Proceedings of the KSME Conference
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• 2004.04a
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• pp.240-245
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• 2004

Tensile properties of hard coating material, TiN, were evaluated using micro-tensile testing system. TiN has been known as a hard coating material commonly used today. Micro-tensile testing system consisted of a micro tensile loading system and a micro-ESPI(Electronic Speckle Pattern Interferometry) system. Micro-tensile loading system had a maximum load capacity of 500mN and a resolution of 4.5 nm in stroke. TiN thin film $1{\mu}m$ thick was deposited on the Si wafer pre-deposited of $Si_3N_4$ film substrate by the closed field unbalanced magnetron sputtering (CFUBMS) process. Three kinds of micro-tensile specimen with the respective width of $50{\mu}m$, $100{\mu}m$ and $500{\mu}m$ were fabricated by MEMS process. The mechanical properties including tensile strength and elastic modulus were determined using the micro-tensile testing system and compared by those obtained by nano-indentation

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.105-109
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• 1992

ITO film, 1500${\AA}$ of thickness, onto glass and p-InP wafer was prepared by e-beam evaporator. The bet ITO film had the resistivity 5.3${\times}$10$\^$-3/ $\Omega$-cm, the concentration 6.5${\times}$10$\^$20/cm$\^$-3/, the transmittance above 80%, and the optical energy gap about 3.5eV. The higher pressure of injected oxygen, the less reverse bias saturation current and the more open circuit voltage. Under the optimum evaporation conditions, the efficiency was 7.19% and the series resistance, and the shunt resistance were respectively 8.5%, 3${\alpha}$, and 26K$\Omega$. The interdependence between activation energy and pre-exponential factor was found. We found he surface of the p-InP became n-type and consquently supposed that the buried homojunction formation, that is, n+-ITO/n-InP/p-InP was caused by Sn diffusion or loss of phosphorus in the interface layer.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.5
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• pp.1057-1061
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• 2007

In this study, we investigated the properties of ZnO thin films prepared by layer-by-layer method in RF magnetron sputtering system using AlAs and ZnO targets. Effects of $H_2O_2$ dip prior to thermal treatment were studied as well. Either n-type or p-type films were observed in our study depending on the annealing conditions. It thus indicates the feasibility of arbitrarily modifying the conductivity type. At the same time, it also implies the thermal instabilities of the film properties. Property measurements after stressing the films up to 144 hours showed that thermal variations of properties nay be suppressed by pre-treatment in 30% $H_2O_2$ for 1 min.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.418-419
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• 2007

Effects of Fe catalyst film and carbon nanotube (CNT) growth temperature on the characteristics of carbon nanotube were investigated in thermal chemical vapor deposition (CVD) process. Fe catalyst was prepared by DC magnetron sputter with thickness of 5-40 nm and pre-treated with ammonia gas. CNTs were grown at $700-900^{\circ}C$. It was found that the island formation of catalyst is necessary for the CNT growth. The diameter of these CNTs shows a strong correlation with the catalyst film thickness and growth temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.407-408
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• 2005

High surface area electrodes for aluminum electrolytic capacitors are produced by AC electrochemical processes. Optimization of crystallographic etch pit growth on aluminium during AC etching of cathode film for aluminium as electrolytic capacitor has been established. In this work, we present the observations of pit distributions by galvanostatic measurements. The effects of electrolyte concentration, current density, frequency, various pre-treatments and etching time have been studied. The specimen was pretreated in 0.5M NaOH and 1M HCl at $40\sim60^{\circ}C$, and transferred into a cell containing 1M HCl, then various mol $H_2SO_4$ etchant was added. Pit size distributions were determined with scanning electron microscopy (SEM).

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.318.1-318.1
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• 2013

Nowadays Cu2ZnSnS4 (CZTS) solar cell is attracting a lot of attention as a strong alternative to CIGS solar cell due to nontoxic and inexpensive constituent elements of CZTS. From various processes for the fabrication of CZTS solar cell, solution-based deposition of CZTS thin films is well-known non-vacuum process and many researchers are focusing on this method because of large-area deposition, high-throughput, and efficient material usage. Typically the solution-based process consists of two steps, coating of precursor solution and annealing of the precursor thin films. Unlike vacuum-based deposition, precursor solution contains unnecessary elements except Cu, Zn, Sn, and S in order to form high quality precursor thin films, and thus the precise control of precursor thin film preparation is essential for achieving high efficient CZTS solar cells. In this work, we have investigated the effect of preparation condition of CZTS precursor thin films on the performance of CZTS solar cells. The composition of CZTS precursor solution was controlled for obtaining optimized chemical composition of CZTS absorber layers for high-efficiency solar cells. Pre-annealing process of the CZTS precursor thin films was also investigated to confirm the effect of thermal treatment on chemical composition and carbon residues of CZTS absorber layers. The change of the morphology of CZTS precursor thin film by the preparation condition was also observed.