• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.9
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• pp.41-45
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• 2014

In this paper, a high-efficiency power amplifier is implemented by using a drain bias control circuit operated at low input power for WPT(Wireless Power Transfer). Adaptive bias control circuit was added to high-efficiency class-E amplifier. It was possible to obtain the overall improvement in efficiency by adjusting the drain bias at low input power. The proposed adaptive class-E amplifier is implemented by using the input and output matching network and serial resonant circuit for improvement in efficiency. Drain bias control circuit consists of a directional coupler, power detector, and operational amplifier for adjusting the drain bias according to the input power. The measured results show that output powers of 41.83 dBm were obtained at 13.56 MHz. At this frequency, we have obtained the power added efficiency(PAE) of 85.67 %. It was confirmed increase of PAE of an average of 8 % than the fixed bias from the low input power level of 0 dBm ~ 6 dBm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.2 s.344
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• pp.88-93
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• 2006

In this paper, smaller load has been used compared with the conventional Doherty amplifier and PBG structure have been employed to suppress IMD (Inter-modulation Distortion) and improve PAE (Power Added Efficiency). And The PBG structure has been employed on the output macthing network of Doherty amplifier. The proposed power amplifier has been improved more the IMD3 by 5.5 dBc, and the average PAE by $5\%,$ at peak output power, $18\%$ at 8dB back-off point respectively than the conventional Doherty power amplifier.

• Proceedings of the KIPE Conference
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• 2010.07a
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• pp.15-16
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• 2010

This paper is study on a high efficiency DC-DC converter of discontinuous conduction mode (DCM) added electric isolation. The converters of high efficiency are generally made that the power losses of the used semiconductor switching devices is minimized. To achieve high efficiency system, the proposed converter is constructed by using a quasi resonant circuit. The control switches using in the converter are operated with soft switching by quasi resonant method. The control switches are operated without increasing their voltage and current stresses by the soft switching technology. The result is that the switching loss is very low and the efficiency of the system is high. The proposed converter is also added electric isolation which is used a pulse transformer. When the power conversion system is required electric isolation, the proposed converter is adopted with the converter system development of high efficiency. The soft switching operation and the system efficiency of the proposed converter are verified by digital simulation and experimental results.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.47-54
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• 2003

New efficiency enhancement techniques have been devised and implemented to InGaP/GaAs HBT MMIC power amplifiers for W-CDMA mobile terminals applications. Two different types of bias current control circuits that select the efficient quiescent currents in accordance with the required output power levels are proposed for overall power efficiency improvement. A dual chain power amplifier with single matching network composed of two different parallel-connected power amplifier is also introduced. With these efficiency enhancement techniques, the implemented MMIC power amplifiers presents power added efficiency (PAE) more than 14.8 % and adjacent channel leakage ratio(ACLR) lower than -39 dBc at 20 dBm output power and PAE more than 39.4% and ACLR lower than -33 dBc at 28 dBm output power. The average power usage efficiency of the power amplifier is improved by a factor of more than 1.415 with the bias current control circuits and even up to a factor of 3 with the dual chain power amplifier.

• Journal of electromagnetic engineering and science
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• v.15 no.2
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• pp.82-88
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• 2015

The magnetron, a vacuum tube, is currently the usual high-power microwave power source used for microwave heating. However, the oscillating frequency and output power are unstable and noisy due to the low quality of the high-voltage power supply and low Q of the oscillation circuit. A heating system with enhanced reliability and the capability for control of chemical reactions is desired, because microwave absorption efficiency differs greatly depending on the object being heated. Recent studies on microwave high-efficiency power amplifiers have used harmonic processing techniques, such as class-F and inverse class-F. The present study describes a high-efficiency 100 W GaN-HEMT amplifier that uses a harmonic processing technique that shapes the current and voltage waveforms to improve efficiency. The fabricated GaN power amplifier obtained an output power of 50.4 dBm, a drain efficiency of 72.9%, and a power added efficiency (PAE) of 64.0% at 2.45 GHz for continuous wave operation. A prototype microwave heating system was also developed using this GaN power amplifier. Microwaves totaling 400 W are fed from patch antennas mounted on the top and bottom of the microwave chamber. Preliminary heating experiments with this system have just been initiated.

• Journal of Advanced Navigation Technology
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• v.14 no.2
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• pp.176-182
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• 2010

This paper proposes that an inverse class-E amplifier is used a tunable parallel resonator at output port in order to maintain a high power-added efficiency(PAE) and output power with wide frequency ranges. A tunable circuit has a constant Q factor at operating frequency ranges and because of using varactor diode, the inductor and capacitor values of resonator can be changed. Also, the inductance value for zero-current switching (ZCS) is implemented a lumped element and the capacitance value is made a distributed element for phase compensation. The inverse class E amplifier using tunable parallel resonator is obtained to deliver 25dBm output power and achieve maximum power added efficiency(PAE) of 75% at 65-120MHz frequency ranges.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.6
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• pp.52-61
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• 1996

In this paper, harmonic-tuning method to achieve the maximum efficiency is proposed. Harmonic tuning method is applied to the optimum load impedance of a class B amplifier, which is extracted by using the modified cripps method. High efficiency power amplifier utilizing GaAs MESFET is designed and fabricated in the 835MHz band. The performance of th eamplifier is presented by having output power of 30.8dBm, drain efficiency of 80.5% and power added efficiency of 66% with an associated power gain of 7.4dB.

• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.12
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• pp.1-6
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• 2008

In this paper, bias control circuit structure have been employed to improve the power added efficiency of the CMOS class-E power amplifier on low input power level. The gate and drain bias voltage has been controlled with the envelope of the input RF signal. The proposed CMOS class-E power amplifier using bias controlled circuit has been improved the PAE on low output power level. The operating frequency is 2.14GHz and the output power is 22dBm to 25dBm. In addition to, it has been evident that the designed the structure has showed more than a 80% increase in PAE for flatness over all input power level, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.9
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• pp.49-54
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• 2008

In this paper, the power added efficiency(PAE) of class F power amplifier is improved by applying a new Photonic Bandgap (PBG) structure on the output of amplifier. The proposed spiral PBG structure is a two-dimensional (2-D) periodic lattice patterned on a dielectric slab that does not require nonplanar fabrication process. This structure bas higher suppression performance at second harmonic. Also, It has a sharp skirt property. This new PBG structure can be applied with class F power amplifier for efficiency improvement. We obtained the PAE of 73.62 % for CDMA applications, and the PAE performance is improved as much as 6.2 % compared with that of a conventional class F power amplifier.