• Journal of Power Electronics
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• v.5 no.3
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• pp.233-239
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• 2005

In this paper, a new conceptual circuit configuration of a 3-phase voltage source, soft switching AC-DC-AC converter using an IGBT module, which has one ARCPL circuit and one ARDCL circuit, is presented. In actuality, the ARCPL circuit is applied in the 3-phase voltage source rectifier side, and the ARDCL circuit is in the inverter side. And more, each power semiconductor device has a novel clamp snubber circuit, which can save the power semiconductor device from voltage and current across each power device. The proposed soft switching circuits have only two active power semiconductor devices. These ARCPL and ARDCL circuits consist of fewer parts than the conventional soft switching circuit. Furthermore, the proposed 3-phase voltage source soft switching AC-DC-AC power conversion system needs no additional sensor for complete soft switching as compared with the conventional 3-phase voltage source AC-DC-AC power conversion system. In addition to this, these soft switching circuits operate only once in one sampling term. Therefore, the power conversion efficiency of the proposed AC-DC-AC converter system will get higher than a conventional soft switching converter system because of the reduced ARCPL and ARDCL circuit losses. The operation timing and terms for ARDCL and ARCPL circuits are calculated and controlled by the smoothing DC capacitor voltage and the output AC current. Using this control, the loss of the soft switching circuits are reduced owing to reduced resonant inductor current in ARCPL and ARDCL circuits as compared with the conventional controlled soft switching power conversion system. The operating performances of proposed soft switching AC-DC-AC converter treated here are evaluated on the basis of experimental results in a 50kVA setup in this paper. As a result of experiment on the 50kVA system, it was confirmed that the proposed circuit could reduce conduction noise below 10 MHz and improve the conversion efficiency from 88. 5% to 90.5%, when compared with the hard switching circuit.

• Journal of the Semiconductor & Display Technology
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• v.13 no.4
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• pp.55-58
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• 2014

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.1
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• pp.38-42
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• 2006

We report 1/f noise PSD(Power Spectrum Density) of sub-100 nm MOSFETs as a function of various parameters such as HCS (Hot Carrier Stress), bias condition, temperature, device size and types of MOSFETs. The noise spectra of sub-100 nm devices showed Lorentzian-like noise spectra. We could check roughly the position of a dominant noise source by changing $V_{DS}$. With increasing measurement temperature, the 1/f noise PSD of 50 nm PMOS device decreases, but there is no decrease in the noise of NMOS device. RTN (Random Telegraph Noise) was measured from the device that shows clearly a Lorentzian-like noise spectrum in 1/f noise spectrum.

• Journal of Power Electronics
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• v.9 no.1
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• pp.36-42
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• 2009

This paper presents a review of an improved high power-high frequency III-V wide bandgap (WBG) semiconductor device, Gallium Nitride (GaN). The device offers better efficiency and thermal management with higher switching frequency. By having higher blocking voltage, GaN can be used for high voltage applications. In addition, the weight and size of passive components on the printed circuit board can be reduced substantially when operating at high frequency. With proper management of thermal and gate drive design, the GaN power converter is expected to generate higher power density with lower stress compared to its counterparts, Silicon (Si) devices. The main contribution of this work is to provide additional information to young researchers in exploring new approaches based on the device's capability and characteristics in applications using the GaN power converter design.

• Journal of the Korea Society for Simulation
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• v.4 no.2
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• pp.41-60
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• 1995

The IGBT(Insulated Gate Bipolar Transistor) is a power semiconductor device that has gained acceptance among circuit design engineers for motor drive and power converter applications. IGBT devices(International Rectifier, Proposed proposed model etc) have the best features of both power MOSFETs and power bipolar transistors, i.e., efficient voltage gate drive requirememts and high current density capability. When designing circuit and systems that utilize IGBTs or other power semiconductor devices, circuit simulations are needed to examine how the devices affect the behavior of the circuit. The interaction of the IGBT with the load circuit can be described using the device model and the state equation of the load circuit. The voltage rise rate at turn-off for inductive loads varies significantly for IGBTs with different base life times, and this rate of rise is important in determing the voltage overshoot for a given series resistor-inductor load circuit. Excessive voltage overshoot is potentially destructive, so a snubber protection circuit may be required. The protection circuit requirements are unique for the IGBT and can be examined using the model. The IGBT model in this paper is verified by comparing the results of the model with experimented results for various circuit operating conditions. The model performs well and describes experimented results accurately for the range of static and dynamic condition in which the device is intended to be operated.

• Journal of Power Electronics
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• v.18 no.6
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• pp.1912-1919
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• 2018

The output capacitance of power semiconductor devices is important in determining the switching losses and in the operation of some resonant converter topologies. Thus, it is important to be able to accurately determine the output capacitance of a particular device operating at elevated power levels so that the contribution of the output capacitance discharge to switch-on losses can be determined under these conditions. Power semiconductor switch manufacturers usually measure device output capacitance using small-signal methods that may be insufficient for power switching applications. This paper shows how first principle methods are applied in a novel way to obtain more relevant large signal output capacitances of Gallium-Nitride (GaN) FETs using the drain-source voltage transient during device switch-off numerically. A non-linear capacitance for an increase in voltage is determined with good correlation. Simulations are verified using experimental results from two different devices. It is shown that the large signal output capacitance as a function of the drain-source voltage is higher than the small signal values published in the data sheets for each of the devices. It can also be seen that the loss contribution of the output capacitance discharging in the channel during switch-on correlates well with other methods proposed in the literature, which confirms that the proposed method has merit.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.361-364
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• 2004

Surface doped SOI RESURF LDMOSFET with recessed source region is proposed to improve the on- and off-state characteristics. Surface region of the proposed LDMOS structure is doped like step. The characteristics of the proposed LDMOS is verified by two-dimensional process simulator ATHENA and device simulator ATLAS[1]. The numerically calculated on-resistance($R_{ON}$) of the proposed LDMOS is $10.36\Omega-cm$ and breakdown voltage is 205V when $L_{dr}=7{\mu}m$ with step doped surface.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.14 no.4
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• pp.275-283
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• 2021

In this study, a driver IC for an AC-powered LED that can be manufactured with a low voltage semiconductor process is designed and the performances of the driver IC were simulated. In order to manufacture a driver IC that operates directly at AC 220V, a semiconductor manufacturing process that satisfies a breakdown voltage of 500V or higher is required. A semiconductor manufacturing process for a high-voltage device requires a much higher manufacturing cost than a general semiconductor process for a low-voltage device. Therefore, the LED driver IC is designed in series so that it can be manufactured with semiconductor process technology that implements a low-voltage device. This makes it possible to divide and apply the voltage to each LED block even if the input voltage is high. The LED lighting circuit shows a power factor of 96% at 220V. In the pnp transistor circuit, a very high power factor of 99.7% can be obtained, and it shows a very stable operation regardless of the fluctuation of the input voltage.

• Proceedings of the KIEE Conference
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• 2007.07a
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• pp.1678-1679
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• 2007

This paper is the electric power system remote control of semiconductor plasma manufacturing equipment using PLC(power line communication). PLC is useful for economical data link but various problems and limitations are caused in using power lines for communications channel Develop of Semiconductor plasma manufactur ing equipment and remote automation technologies of tool develops day after day and standards. Also, Remote electric power control and device module control by GUIRCS(Graphic User Interface Remote Control System) of tool are monitoring in real time.

• Proceedings of the KIEE Conference
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• 2003.11c
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• pp.860-863
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• 2003

In this paper high power SMU(Source Measurement Unit) having 50V/1.5A source/measure range has been designed and implemented. The SMU has two operation mode, voltage mode and current mode. The SMU can be used as variable voltage source, variable current source, voltage meter, or current meter. Combining two different unit, output power can be doubled as 100V/1.5A. The developed SMU tan be used many semiconductor testing system and electronic device inspecting system.