• Korean Journal of Materials Research
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• v.22 no.11
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• pp.636-641
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• 2012

In this study, we have investigated highly efficient nanoscale surface corrugated light emitting diodes (LEDs) for the enhancement of light extraction efficiency (LEE) of nitride semiconductor LEDs. Nanoscale indium tin oxide (ITO) surface corrugations are fabricated by using the conformal nanoimprint technique; it was possible to observe an enhancement of LEE for the ITO surface corrugated LEDs. By incorporating this novel method, we determined that the total output power of the surface corrugated LEDs were enhanced by 45.6% for patterned sapphire substrate LEDs and by 41.9% for flat c-plane substrate LEDs. The enhancement of LEE through nanoscale surface corrugations was studied using 3-dimensional Finite Different Time Domain (FDTD) calculation. From the FDTD calculations, we were able to separate the light extraction from the top and bottom sides of device. This process revealed that light extraction from the top and bottom sides of a device strongly depends on the substrate and the surface corrugation. We found that enhanced LEE could be understood through the mechanism of enhanced light transmission due to refractive index matching and the increase of light scattering from the corrugated surface. LEE calculations for the encapsulated LEDs devices also revealed that low LEE enhancement is expected after encapsulation due to the reduction of the refractive index contrast.

• Journal of the Optical Society of Korea
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• v.19 no.4
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• pp.409-414
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• 2015

Light-emitting diodes (LED) have many advantages for dental astral lighting because of their high color rendering index (CRI), low power consumption, light weight and longer life. A dental astral lamp is specially designed and simulated for securing the extra space for installing a multimedia display that will be helpful for treating young patients. The optical system using the reverse dual reflection method consisted of four illumination modules disposed at the four corners of the dental astral lamp, and each module comprises a high power LED, an elliptical mirror, and a multifacet reflector assembly using eight cylindrical mirrors. It is shown that the required illuminance, illumination pattern, and the illumination uniformity are well satisfied.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.05a
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• pp.686-689
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• 2012

In this paper, the GaN-based LED characteristics are analyzed using ISE-TCAD. The LED consists of GaN barriers, active region of InGaN quantum well, AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power characteristics of LED considering Auger recombination rate, thickness of quantum well and number of quantum wells are analyzed and some criteria for the design of LED are proposed.

• Journal of Advanced Marine Engineering and Technology
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• v.34 no.6
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• pp.852-857
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• 2010

In this paper, we proposed and demonstrated an indoor visible-light communication system using an array of light-emitting diodes (LEDs). The main idea is based on that the LEDs can be used not only for lighting but also for free-space optical communications. Because LEDs offer advantageous properties such as high brightness, reliability, lower power consumption and long lifetime, the indoor visible-light communication systems are going to provide high quality of service by the high radiation power of the LED lighting. Prototype of simplex channel for audio and the full-duplex channel for text message were developed. Results indicates the viability of creating inexpensive free-space optical communication transceivers that might be embedded in commercial light products to supports indoor wireless networking.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.233-236
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• 2012

In this paper, the output characteristics of GaN-based LED considering blocking layer design variables are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering Al mole fraction of EBL, thickness of EBL, Al mole fraction of HBL and doping concentration of HBL are analyzed using ISE-TCAD.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.251-254
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• 2012

In this paper, the output characteristics of GaN-based LED considering quantum well structure are analyzed. The basic structure of the LED consists of active region of GaN barrier and InGaN quantum well between AlGaN EBL(Electron Blocking Layer) and AlGaN HBL(Hole Blocking Layer) on GaN buffer layer. The output power, internal quantum efficiency characteristics of LED active region considering thickness of quantum well, number of quantum well and doping of barrier are analyzed using ISE-TCAD.

• The Transactions of the Korean Institute of Power Electronics
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• v.26 no.1
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• pp.66-73
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• 2021

This study presents a novel four-channel light-emitting diode (LED) current balancing topology using a current-fed hybrid quasi-Z-source converter. With the proposed structure, currents flowing through four LED strings are automatically balanced owing to the charge (amp-sec) balance condition on capacitors. Thus, automatic current balancing of the proposed driver is simple and precise. In addition, the proposed LED driver uses only one active switch and three diodes. The operating principle and characteristics of the proposed four-channel LED driver are analyzed in detail. To verify the operation of the proposed LED driver, a prototype is built and tested with different numbers of LEDs.

• International Journal of Internet, Broadcasting and Communication
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• v.7 no.2
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• pp.161-167
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• 2015

The performance of high power LEDs highly depends on the junction temperature. Operating at high junction temperature causes elevation of the overall thermal resistance which causes degradation of light intensity and lifetime. Thus, appropriate thermal management is critical for LED packaging. The main goal of this research is to improve thermal resistance by optimizing and comparing nano-pore silicon-based thermal substrate to insulated metal substrate and direct bonded copper thermal substrate. The thermal resistance of the packages are evaluated using computation fluid dynamic approach for 1 W single chip LED module.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.39C no.3
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• pp.234-238
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• 2014

Multichip packaging was achieved the best solution to significantly reduce thermal resistance at the same time, to increase luminance intensity in LEDs packaging application. For the packaging, thermal spreading resistance is an important parameter to get influence the total thermal performance of LEDs. In this study, silicon-based multichip light emitting diodes (LEDs) packaged module has been examined for thermal characteristics in several parameters. Compared to the general conventional single LED packaged chip module, multichip LED packaged module has many advantages of low cost, low density, small size, and low thermal resistance. This analyzed module is comprised of multichip LED array, which consists of 32 LED packaged chips with supplement power of 0.2 W at every single chip. To realize the extent of thermal distribution, the computer-aided design model of 6.4 W Si-based multichip LED module was designed and was performed by the simulation basis of actual fabrication flow. The impact of thermal distribution is analyzed in alternative ways both optimizing numbers of fins and the thickness of that heatsink. In addition, a thermal resistance model was designed and derived from analytical theory. The optimum simulation results satisfies the expectations of the design goal and the measurement of IR camera results. tart after striking space key 2 times.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.216-219
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• 2008

The Power LED is more much than 1W and appliable to lights that is different from signal LED. In this paper we investigated types of tests in reliability assessment standards on Power LED. we make comparison of that military standards, JEITA(Japan Electronics and Information Technology Industries Association) and JEDEC(Joint Electron Device Engineering Council) with RS(reliability standard). Reliability tests should be considered that informations can be obtained from requirements of a real system Therefore, The paper aided companies to criteria for reliability tests by themselves.