• Journal of Power Electronics
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• v.4 no.4
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• pp.205-216
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• 2004

In this paper, a three-phase induction machine-based wind power generation scheme is proposed. This scheme uses a low-cost diode bridge rectifier circuit connected to an induction machine via an ac load voltage regulator (AC-LVR) to regulate dc power transfer. The AC-LVR is used to regulate the DC load voltage of the diode bridge rectifier circuit which is connected to the three-phase self-excited induction generator (SEIG). The excitation of the three-phase SEIG is supplied by the static VAR compensator (SVC). This simple method for obtaining a full variable-speed wind turbine system by applying a back-to-back power converter to a wound rotor induction generator is useful for wind power generation at widely varying speeds. The dynamic performance responses and the experimental results of connecting a 5kW 220V three-phase SEIG directly to a diode bridge rectifier are presented for various loads. Moreover, the steady-state simulated and experimental results of the PI closed-loop feedback voltage regulation scheme prove the practical effectiveness of these simple methods for use with a wind turbine system.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.305-308
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• 2000

A technique to suppress the low frequency ripple voltage of the DC output in three phase buck diode rectifiers is presented in this paper. The proposed pulse frequency modulation methods and duty ratio modulation methods are employed to regulate the output voltage of the buck diode rectifiers and guarantee zero-current -switching(ZCS) of the switch over the wide load range The proposed control methods used in this paper provide generally good performance such as low THD of the input line current and unity power factor. IN addition control methods can be effectively used to suppress the low frequency ripple voltage appeared in the dc output voltage. The harmonic injection technique illustrates its validity and effectiveness through the simulations.

• Proceedings of the KIPE Conference
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• 1999.07a
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• pp.493-496
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• 1999

A new soft switching single stage AC-DC full bridge boost converter with unit input power factor and isolated output is presented in this paper. Due to the use of a non-dissipative snubber on the primary side, a single stage high-power factor isolated full bridge boost converter has a significant reduction of switching losses in the main switching devices. The non-dissipative snubber adopted in this study consists of a snubber capacitor Cr, a snubber inductor Lr, a fast recovery snubber diode Dr, and a commutation diode Dr, and a commutation diode Dp. This paper presents the complete operating principles, theoretical analysis and experimental results.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.359-359
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• 2010

IGBT(Insulated Gate Bipolar Transistor) 란 MOS(Metal Oxide Silicon) 와 Bipolar 기술의 결정체로 낮은 순방향 손실(Low Saturation)과 빠른 Speed를 특징으로 기존의 Thyristor, BJT, MOSFET 등으로 실현 불가능한 분양의 응용처를 대상으로 적용이 확대 되고 있고, 300V 이상의 High Power Application 영역에서 널리 사용되고 있는 고효율, 고속의 전력 시스템에 있어서 필수적으로 이용되는 Power Device이다. IGBT는 출력 특성 면에서 Bipolar Transistor 이상의 전류 능력을 가지고 있고 입력 특성 면에서 MOSFET과 같이 Gate 구동 특성을 갖기 때문에 High Switching, High Power에 적용이 가능한 소자이다. 반면에, Conventional IGBT는 MOSFET과 달리 IGBT 내부에 Anti-Parallel Diode가 없기 때문에 Inductive Load Application 적용시에는 별도의 Free Wheeling Diode가 필요하다. 그래서, 본 논문에서 별도의 Anti-Parallel Diode의 추가 없이도 Inductive Load Application에 적용 가능한 RC IGBT를 적용하여 600V/15A급 Three Phase Inverter Module을 제안 하고자 한다.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.85-91
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• 2008

A Boost Power Factor Correction (PFC) Converter employing Zero Voltage Switching (ZVS) based Compound Active Clamping (CAC) technique is presented in this paper. An Electro Magnetic Interference (EMI) Filer is connected at the line side of the proposed converter to suppress Electro Magnetic Interference. The proposed converter can effectively reduce the losses caused by diode reverse recovery. Both the main switch and the auxiliary switch can achieve soft switching i.e. ZVS under certain condition. The parasitic oscillation caused by the parasitic capacitance of the boost diode is eliminated. The voltage on the main switch, the auxiliary switch and the boost diode are clamped. The principle of operation, design and simulation results are presented here. A prototype of the proposed converter is built and tested for low input voltage i.e. 15V AC supply and the experimental results are obtained. The power factor at the line side of the converter and the converter efficiency are improved using the proposed technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.3
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• pp.216-221
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• 2006

Lifetime control technique by proton implantation has become an useful tool for production of modern power devices. In this work, punch-through type diodes were irradiated with protons for the high speed power diode fabrication. Proton irradiation which was capable of controlling carrier's lifetime locally was carried out at the various energy and dose conditions. Characterization of the device was performed by current-voltage, capacitance-voltage and reverse recovery time measurement. We obtained enhanced reverse recovery time characteristics which was about $45\;\%$ of original device reverse recovery time and about $73\;\%$ of electron irradiated device reverse recovery time. The measurement results showed that proton irradiation technique was able to effectively reduce minority carrier lifetime without degrading the other characteristics.

• Korean Journal of Optics and Photonics
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• v.12 no.6
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• pp.489-495
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• 2001

We developed a design code for a diode side-pumped Nd:YAG laser with a diffusive reflector to investigate the optimum design conditions resulting in homogeneous absorption distribution and efficient laser output power. By including the thermal tensing effect in the calculation of the laser output power, the calculated output powers were in fairly good agreement with the experimental results within the stable resonator condition. The calculation method can be used effectively for a diode side-pumped Nd:YAG laser in choosing the optimum design parameters and in predicting the laser output power.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.7
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• pp.791-796
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• 2012

A RF limiter is a component to protect the receiver front end from undesired signal. A RF limiter is a key component whose output is constant level for all inputs above a critical value. A RF limiter use a diode to pass signals of low power while attenuating those above some threshold. A RF limiter for receiver protection in modern radar systems is playing a vital role in order to meet challenges of new interference threats and complicated electromagnetic environments. This paper proposed a new circuit for high power RF limiter whose structure is the combination of the PIN diode and Limit diode. PIN diode take a use of its isolation characteristics which act as a switch does. A 2 kW RF limiter with 200 us pulse width at S-band was developed. It shows good agreements between estimated value and measured results.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.451-458
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• 2002

Absorptive type SP3T(Single Pole Three Throw) and SP8T switch modules over the 6-18 GHz are designed and fabricated. The epitaxial structure of GaAs PIN diode for switch modules are designed for low loss and high power capability. The maximum input power of SP3T and SP8T switch modules are 2 W and 1 W, respectively. The switching time with driver circuit is less than 130 nsec. The maximum insertion loss of SP3T switch module and SP8T module shows 2.8 dB and 4.2 dB, respectively. The isolation between input port and output port is more than 55 dB. Two switch modules for electronic warfare system have passed the environment tests of the related test items.

• Korean Journal of Optics and Photonics
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• v.9 no.3
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• pp.186-190
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• 1998

We fabricated a diode-side pumped high power Nd:YAG laser with a gold coated flow tube(diameter of 10mm) and three sets of 140W diode bar. The diameter of Nd:YAG rod was 6mm and its length was 130mm. We obtained 130W cw power from a linear resonator with an 11% output coupler, which corresponds to the slope efficiency of 43% and the optical efficiency of 31%. The measured beam quality factor(M$^2$) reached about 85 which is fairly large due to the large size of the rod. Thermal lensing of the rod was measured to be 5.3-7.4D/$kW_{pump}$ when the laser was operating.