• 전력전자학회:학술대회논문집
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• 전력전자학회 2013년도 추계학술대회 논문집
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• pp.89-90
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• 2013

Higher power density, higher operational temperature, lower on state resistance and higher switching frequency capabilities of Silicon Carbide (SiC) technology devices compared to Silicon (Si) devices makes it has higher promising market. One of the most developed SiC devices is the power MOSFET. This study tests the SiC MOSFET under short circuit conditions taking into account the effect of gate voltage characteristics. The results will be compared to IGBT and MOSFET Si devices with similar ratings. A tester circuit was designed to perform the short circuit operation.

• 전기학회논문지
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• 제56권9호
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• pp.1535-1542
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• 2007

HTS (High Temperature Superconducting) Power devices has the several useful characteristics from the technical and economical viewpoint. Possible application to the utility industry have been widely discussed in various research projects. For the successful introduction of HTS power devices into power system, establishing a proper R&D and marketing strategies through estimating the future market size are necessary. However, quantitative estimates of how well HTS power devices will serve their markets have been lacking. In this paper, we propose a estimation methodology of future market size for HTS power divices such as cable, transformer, generator, and motor, and also evaluate the future international and domestic market size by using proposed methodology.

• 한국초전도ㆍ저온공학회논문지
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• 제8권1호
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• pp.34-38
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• 2006

There are many parameters that should be considered from the viewpoint of real power system operation and planning in designing HTS power devices. Especially, in the power system with HTS-FCL(fault current limiter) and TR(transformer), there is close correlation between parameters of the HTS power devices. This paper describes some considerations in determining parameters of HTS power devices, which are related to technical and economical aspects. The main parameters in this study are the quench resistance of HTS-FCL and the % impedance of HTS-TR. The results may give basic information for developing the devices.

• 한국군사과학기술학회지
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• 제11권6호
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• pp.148-155
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• 2008

We investigated the damage effects of microcontroller devices under high power electromagnetic(HPEM) wave. HPEM wave was radiated from the open-ended standard rectangular waveguide(WR-340) to free space. The influence of different reset-, clock-, data-, and power supply-line lengths has been tested. The susceptibility of the tested microcontroller devices was in general much influenced by clock-, reset-, and power supply-line length, little influenced by data-line length. Further the line length was increased, the malfunction threshold was decreased as expected, because more energy couples to the devices. The surfaces of the destroyed microcontroller devices were removed and the chip conditions were investigated with microscope. The microscopic analysis of the damaged devices showed component and bondwire destructions such as breakthroughs and melting due to thermal effects.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.55-58
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• 2014

The next-generation AlGaN/GaN HEMT power devices need higher power at higher frequencies. To know the device characteristics, the simulation of those devices are made. This paper presents a simulation study on the DC and RF characteristics of AlGaN/GaN HEMT power devices. According to the reduction of gate length from $2.0{\mu}m$ to $0.1{\mu}m$, the simulation results show that the drain current at zero gate voltage increases, the gate capacitance decreases, and the maximum transconductance increases, and thus the cutoff frequency and the maximum oscillation frequency increase. The maximum oscillation frequency maintains higher than the cutoff frequency, which means that the devices are useful for power devices at very high frequencies.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1556-1558
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• 2003

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.

• 마이크로전자및패키징학회지
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• 제21권2호
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• pp.71-78
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• 2014

Silicon has been most widely used semiconductor material for power electronic systems. However, Si-based power devices have attained their working limits and there are a lot of efforts for alternative Si-based power devices for better performance. Advances in power electronics have improved the efficiency, size, weight and materials cost. New wide band gap materials such as SiC have now been introduced for high power applications. SiC power devices have been evolved from lab scale to a viable alternative to Si electronics in high-efficiency and high-power density applications. In this article, the potential impact of SiC devices for power applications will be discussed along with their Si counterpart in terms of higher switching performance, higher voltages and higher power density. The recent progress in the development of high voltage power semiconductor devices is reviewed. Future trends in device development and industrialization are also addressed.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 합동 추계학술대회 논문집 정보 및 제어부문
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• pp.38-41
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• 2001

To reduce the wasted power with using an OP-AMP, 3 circuit supplying the same amount of power to load through overall voltage range can able proposed. With this type of design, the power that induced to the devices in the circuit will be reduced, we can also develope a small size power supply with the OP-AMP developed using this design. If we need a OP-AMP needed to handle higher power than usual, another design technique can be proposed. With substituting one device with the devices connected in series, the power loaded to each devices in the series devices can be reduced. This thesis contents the design of an OP-AMP to use in high power fields with small thermal dissipation.

• 한국산업정보학회논문지
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• 제12권3호
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• pp.95-103
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• 2007

데이터, 비디오, 오디오 등에 대한 디지털 컨버전스 추세와 함께, 최근 휴대용 멀티미디어 재생기(PMP)가 점차 대중화되고 있다. PMP는 DSP, 보다 큰 LCD 스크린, 하드디스크 등이 장착되는 이유로 다른 휴대형 장치들에 비해서 효과적인 전력관리에 대한 필요성이 강조되고 있다. 본 논문에서는 데이터수집 장치를 기반으로 한 하드웨어/소프트웨어기반 전력 측정 시스템 구축에 대해서 설명하고, PMP에서 발생하는 부팅, 동영상 재생, 다양한 비디오 코딩 방식 적용과 같은 다양한 사건 실행시의 전력소모 패턴을 측정하고 분석한다. 분석 결과는 저전력 PMP 장치를 설계하기 위한 유용한 정보를 제공한다.

• 한국컴퓨터정보학회논문지
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• 제22권2호
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• pp.9-19
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• 2017

Useful continuous sensing applications are increasingly emerging as a new class of mobile applications. Meanwhile, open, multi-use sensor devices are newly adopted beyond smartphones, and provide huge opportunities to expand potential application categories. In this upcoming environment, uncoordinated use of sensor devices would cause severe imbalance in power consumption of devices, and thus result in early shutdown of some sensing applications depending on power-hungry devices. In this paper, we propose EnergyCordy, a novel inter-device energy use coordination system; with a system-wide holistic view, it coordinates the energy use of concurrent sensing applications over multiple sensor devices. As its key approach, we propose a relaxed sensor association; it decouples the energy use of an application from specific sensor devices leveraging multiple context inference alternatives, allowing flexible energy coordination at runtime. We demonstrated the effectiveness of EnergyCordy by developing multiple example applications over custom-designed wearable senor devices. We show that EnergyCordy effectively coordinates the power usage of concurrent sensing applications over multiple devices and prevent undesired early shutdown of applications.