• Clean Technology
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• v.29 no.4
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• pp.255-261
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• 2023

Power semiconductors are semiconductors used for power conversion, transformation, distribution, and control. Recently, the global demand for high-voltage power semiconductors is increasing across various industrial fields, and optimization research on high-voltage IGBT components is urgently needed in these industries. For high-voltage IGBT development, setting the resistance value of the wafer and optimizing key unit processes are major variables in the electrical characteristics of the finished chip. Furthermore, the securing process and optimization of the technology to support high breakdown voltage is also important. Etching is a process of transferring the pattern of the mask circuit in the photolithography process to the wafer and removing unnecessary parts at the bottom of the photoresist film. Ion implantation is a process of injecting impurities along with thermal diffusion technology into the wafer substrate during the semiconductor manufacturing process. This process helps achieve a certain conductivity. In this study, dry etching and wet etching were controlled during field ring etching, which is an important process for forming a ring structure that supports the 3.3 kV breakdown voltage of IGBT, in order to analyze four conditions and form a stable body junction depth to secure the breakdown voltage. The field ring ion implantation process was optimized based on the TEG design by dividing it into four conditions. The wet etching 1-step method was advantageous in terms of process and work efficiency, and the ring pattern ion implantation conditions showed a doping concentration of 9.0E13 and an energy of 120 keV. The p-ion implantation conditions were optimized at a doping concentration of 6.5E13 and an energy of 80 keV, and the p+ ion implantation conditions were optimized at a doping concentration of 3.0E15 and an energy of 160 keV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.25 no.6
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• pp.346-361
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• 2013

This article reviews the papers published in the Korean Journal of Air-Conditioning and Refrigeration Engineering during 2012. It is intended to understand the status of current research in the areas of heating, cooling, ventilation, sanitation, and indoor environments of buildings and plant facilities. The conclusions are as follows : (1) The research works on thermal and fluid engineering have been reviewed as groups of fluid machinery, pipes and valves, fuel cells and power plants, ground-coupled heat pumps, and general heat and mass transfer systems. Research issues are mainly focused on new and renewable energy systems, such as fuel cells, ocean thermal energy conversion power plants, and ground-coupled heat pump systems. (2) Research works on the heat transfer area have been reviewed in the categories of heat transfer characteristics, pool boiling and condensing heat transfer, and industrial heat exchangers. Researches on heat transfer characteristics included the results for natural convection in a square enclosure with two hot circular cylinders, non-uniform grooved tube considering tube expansion, single-tube annular baffle system, broadcasting LED light with ion wind generator, mechanical property and microstructure of SA213 P92 boiler pipe steel, and flat plate using multiple tripping wires. In the area of pool boiling and condensing heat transfer, researches on the design of a micro-channel heat exchanger for a heat pump, numerical simulation of a heat pump evaporator considering the pressure drop in the distributor and capillary tubes, critical heat flux on a thermoexcel-E enhanced surface, and the performance of a fin-and-tube condenser with non-uniform air distribution and different tube types were actively carried out. In the area of industrial heat exchangers, researches on a plate heat exchanger type dehumidifier, fin-tube heat exchanger, an electric circuit transient analogy model in a vertical closed loop ground heat exchanger, heat transfer characteristics of a double skin window for plant factory, a regenerative heat exchanger depending on its porous structure, and various types of plate heat exchangers were performed. (3) In the field of refrigeration, various studies were executed to improve refrigeration system performance, and to evaluate the applicability of alternative refrigerants and new components. Various topics were presented in the area of refrigeration cycle. Research issues mainly focused on the enhancement of the system performance. In the alternative refrigerant area, studies on CO2, R32/R152a mixture, and R1234yf were performed. Studies on the design and performance analysis of various compressors and evaporator were executed. (4) In building mechanical system research fields, twenty-nine studies were conducted to achieve effective design of mechanical systems, and also to maximize the energy efficiency of buildings. The topics of the studies included heating and cooling, HVAC system, ventilation, renewable energy systems, and lighting systems in buildings. New designs and performance tests using numerical methods and experiments provide useful information and key data, which can improve the energy efficiency of buildings. (5) In the fields of the architectural environment, studies for various purposes, such as indoor environment, building energy, and renewable energy were performed. In particular, building energy-related researches and renewable energy systems have been mainly studied, reflecting interests in global climate change, and efforts to reduce building energy consumption by government and architectural specialists. In addition, many researches have been conducted regarding indoor environments.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.252-259
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• 2005

Single crystal $CuGaSe_2$ layers were grown on thoroughly etched semi-insulating CaAs(100) substrate at $450^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuGaSe_2$ source at $610^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence (PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuGaSe_2$ thin films measured with Hall effect by Van der Pauw method are $4.87{\times}10^{17}cm^{-3}$ and $129cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.7998eV-(8.7489{\times}10^{-4}eV/K)T^2/(T+335K)$. The voltage, current density of maxiumun power, fill factor, and conversion, efficiency of $n-CdS/p-CuGaSe_2$, heterojunction solar cells under $80mW/cm^2$ illumination were found to be 0.41 V, $21.8mA/cm^2$, 0.75 and 11.17%, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.189-189
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• 2012

Lead sulfide (PbS) nanocrystal quantum dots (NQDs) are promising materials for various optoelectronic devices, especially solar cells, because of their tunability of the optical band-gap controlled by adjusting the diameter of NQDs. PbS is a IV-VI semiconductor enabling infrared-absorption and it can be synthesized using solution process methods. A wide choice of the diameter of PbS NQDs is also a benefit to achieve the quantum confinement regime due to its large Bohr exciton radius (20 nm). To exploit these desirable properties, many research groups have intensively studied to apply for the photovoltaic devices. There are several essential requirements to fabricate the efficient NQDs-based solar cell. First of all, highly confined PbS QDs should be synthesized resulting in a narrow peak with a small full width-half maximum value at the first exciton transition observed in UV-Vis absorbance and photoluminescence spectra. In other words, the size-uniformity of NQDs ought to secure under 5%. Second, PbS NQDs should be assembled carefully in order to enhance the electronic coupling between adjacent NQDs by controlling the inter-QDs distance. Finally, appropriate structure for the photovoltaic device is the key issue to extract the photo-generated carriers from light-absorbing layer in solar cell. In this step, workfunction and Fermi energy difference could be precisely considered for Schottky and hetero junction device, respectively. In this presentation, we introduce the strategy to obtain high performance solar cell fabricated using PbS NQDs below the size of the Bohr radius. The PbS NQDs with various diameters were synthesized using methods established by Hines with a few modifications. PbS NQDs solids were assembled using layer-by-layer spin-coating method. Subsequent ligand-exchange was carried out using 1,2-ethanedithiol (EDT) to reduce inter-NQDs distance. Finally, Schottky junction solar cells were fabricated on ITO-coated glass and 150 nm-thick Al was deposited on the top of PbS NQDs solids as a top electrode using thermal evaporation technique. To evaluate the solar cell performance, current-voltage (I-V) measurement were performed under AM 1.5G solar spectrum at 1 sun intensity. As a result, we could achieve the power conversion efficiency of 3.33% at Schottky junction solar cell. This result indicates that high performance solar cell is successfully fabricated by optimizing the all steps as mentioned above in this work.

• Bulletin of the Korean Chemical Society
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• v.33 no.9
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• pp.3061-3070
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• 2012

Novel 2-hexylthieno[3,2-b]thiophene-containing conjugated molecules have been synthesized via a reduction reaction using tin chloride in an acidic medium. They exhibited good solubility in common organic solvents and good self-film and crystal-forming properties. The single-crystalline objects were fabricated by a solvent slow diffusion process and then were employed for fabricating field-effect transistors (FETs) along with thinfilm transistors (TFTs). TFTs made of 5 and 6 exhibited carrier mobility as high as 0.10-0.15 $cm^2V^{-1}s^{-1}$. The single-crystal-based FET made of 6 showed 0.70 $cm^2V^{-1}s^{-1}$ which was relatively higher than that of the 5-based FET (${\mu}=0.23cm^2V^{-1}s^{-1}$). In addition, we fabricated organic photovoltaic (OPV) cells with new 2-hexylthieno [3,2-b]thiophene-containing conjugated molecules and methanofullerene [6,6]-phenyl C61-butyric acid methyl ester ($PC_{61}BM$) without thermal annealing. The ternary system for a bulk heterojunction (BHJ) OPV cell was elaborated using $PC_{61}BM$ and two p-type conjugated molecules such as 5 and 7 for modulating the molecular energy levels. As a result, the OPV cell containing 5, 7, and $PC_{61}BM$ had improved results with an open-circuit voltage of 0.90 V, a short-circuit current density of 2.83 $mA/cm^2$, and a fill factor of 0.31, offering an overall power conversion efficiency (PCE) of 0.78%, which was larger than those of the devices made of only molecule 5 (${\eta}$~0.67%) or 7 (${\eta}$~0.46%) with $PC_{61}BM$ under identical weight compositions.

• Journal of the Korean Electrochemical Society
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• v.18 no.1
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• pp.38-44
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• 2015

This review article summarizes the recent progress of quantum dot (QD)-sensitized solar cells based on mesoporous $TiO_2$ thin films. From the intrinsic characteristics of nanoscale inorganic QDs with various compositions, it was possible to construct a variety of 3rd-generation thin film solar cells by solution process. Depending on preparation methods, colloidal QD sensitizers are pre-prepared for later deposition onto the surface of $TiO_2$ or in-situ deposition of QDs from chemical bath is done for direct growth of QD sensitizers over substrates. Recently, colloidal QD sensitizers have shown an overall power conversion efficiency of ~7% by a very precise control of composition while a representative CdS/CdSe from chemical bath deposition have done ~5% with polysulfide electrolytes. In the near future, it is necessary to carry out systematic investigations for developing new hole-conducting materials and controlling interfaces within the cell, thus leading to an enhancement of both open-circuit voltage and fill factor while keeping the current high value of photocurrents from QDs towards more efficient and stable QD-sensitized solar cells.

• Proceedings of the Korea Society for Energy Engineering kosee Conference
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• 2002.11a
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• pp.171-184
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• 2002

Approx. 200,000 bpd vacuum residue oil is produced from oil refineries in Korea. These are supplying to use asphalt, high sulfur fuel oil, and upgrading at the residue hydro-desulfurization unit. Vacuum residue oil has high energy content, however high sulfur content and high concentration of heavy metals represent improper low grade fuel. To meet growing demand for effective utilization of vacuum residue oil from refineries, recently some of the oil refinery industries in Korea, such as SK oil refinery and LG Caltex refinery, have already proceeded feasibility study to construct 435-500 MWe IGCC power plant and hydrogen production facilities. Recently, KIER(Korea Institute of Energy Research) are studing on the Vacuum Residue gasification process using an oxygen-blown entrained-flow gasifier. The experiment runs were evaluated under the reaction temperature : 1,100~1,25$0^{\circ}C$, reaction pressure : 1~6kg/$\textrm{cm}^2$G, oxygen/V.R ratio : 0.8~0.9 and steam/V.R ratio : 0.4-0.5. Experimental results show the syngas composition(CO+H$_2$) : 85~93%, syngas flow rate : 50~110Mm$^3$/hr, heating value : 2,300~3,000 ㎉/Nm$^3$, carbon conversion : 65~92, cold gas efficiency : 60~70%. Also equilibrium modeling was used to predict the vacuum residue gasification process and the predicted values were compared reasonably well with experimental data.

• Journal of Energy Engineering
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• v.12 no.1
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• pp.49-57
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• 2003

Approx. 200.000 bpd vacuum residue oil is produced from oil refineries in Korea, and is supplied to use asphalt, high sulfur fuel oil and for upgrading at the residue hydro-desulfurization unit. Vacuum residue oil has high energy content, however its high sulfur content and high concentration of heavy metals represent improper low grade fuel. To meet growing demand for effective utilization of vacuum residue oil from refineries, recently some of the oil refinery industries in Korea, such as SK oil refinery and LG Caltex refinery, have already proceeded feasibility study to construct 435~500 MWe IGCC power plant and hydrogen production facilities. Recently, KIER (Korea Institute of Energy Research) are studying on the Vacuum Residue gasification process using an oxygen-blown entrained-flow gasifier. The experiment runs were evaluated under the reaction temperature: 1.100~l,25$0^{\circ}C$, reaction pressure: 1~6 kg/$\textrm{cm}^2$G, oxygen/V.R ratio: 0.8~0.9 and steam/V.R ratio: 0.4~0.5. Experimental results show the syngas composition (CO+H$_2$): 85~93%, syngas flow rate: 50~l10 Nm$^3$/hr, heating value: 2,300~3,000 k㎈/Nm$^3$, carbon conversion: 65~92, cold gas efficiency: 60~70%. Also equilibrium modeling was used to predict the vacuum residue gasification process and the predicted values were compared reasonably well with experimental data.

• Journal of Broadcast Engineering
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• v.12 no.1 s.34
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• pp.11-27
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• 2007

T-DMB(Terrestrial-Digital Multimedia Broadcasting) for portable and mobile broadcasting service was officially launched in the metropolitan area of Korea in December 2005. The development of interactive data services and the expansion of T-DMB network have been now progressed, and the regional T-DMB broadcasters will be selected in the near future. Although it is important to evaluate service area and reduce a fringe area for optimizing RF coverage of T-DMB, there was no professional system to support those works, and therefore lots of resources in budget, manpower and time were required. The measurement considering characteristics of SFN(Single Frequency Network) is essential in the implementation of T-DMB network which needs to control synchronization, spacing and output power of transmitters. In addition, mobile measurement, enough measured parameters for many-sided analysis of reception quality, efficient management of enormous measured data and representation of measured results on the electronic map are also important in evaluating service area. In this paper, we derived requirements for a new measurement system in T-DMB by considering the above details, and we proposed and developed an integrated measurement and analysis system. The developed system was applied to the implementation of T-DMB network of KBS and field tests, and it proved its efficiency and accuracy in result.