• Journal of Korea Multimedia Society
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• v.23 no.1
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• pp.8-14
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• 2020

For a reliable fingerprinting system, improving fingerprint matching accuracy is crucial. In this paper, we try to improve a binary image fingerprint matching performance by utilizing auxiliary information, power mask, which is obtained while constructing fingerprint DB. The power mask is an expected robustness of each fingerprint bit. A caveat of the power mask is the increased storage cost of the fingerprint DB. This paper mitigates the problem by reducing the size of the power mask utilizing spatial correlation of an image. Experiments on a publicly-available image dataset confirmed that the power mask is effective in improving fingerprint matching accuracy.

• The Journal of the Korea Contents Association
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• v.16 no.11
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• pp.754-766
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• 2016

What is the relationship between the power of mask and the popularity of 'Umakdaejang(which means a band master in Korean)' who was one of the mask-singers in King of Masksinger? And which aspects of the contemporary Korean society were projected to this fever of Umakdaejang? This study has made efforts to answer these questions. To do this, it has examined the episodes that Umakdaejang appeared in the TV program King of Masksinger, has dealt with the origin and purpose of mask, and with the cultural meaning of the mask's concealing and revealing identity in order to understand the power of mask. Findings are as follows. Umakdaejang amplified the curiosity of his identity by displaying anonymous typicality with the mask. He also showed the resistant gestures against the forms and manners of the existing TV music programs through the way of somewhat tough, uncontrolled, and mischievous behaviors. By doing so, he exposed the desire of self-revelation. As a result, by means of its anonymity and resistance, the mask functioned as an effective apparatus being able to resist against the class polarization of the capitalist ideology. This can be viewed as the origin of the fever of Umakdaejang as well as the very power of mask itself.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.2
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.10
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• Proceedings of the IEEK Conference
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• 2000.11a
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• pp.325-328
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• 2000

This paper has been studied a rower amplifier for IMT-2000 handset. Circuit design is performed and optimized by using HP ADS RF software. Designed amplifier consist of 2 stage, has 25㏈ gain, over 27㏈m output power and about 40% power efficiency. Power amplifier operation frequency range is 1955${\pm}$70MHz. Mask layout of the designed Amplifier consisting of 4 mask. The measured results of these values are satisfying the specification of IMT-2000 handset.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.12
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• pp.50-56
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• 2007

Femtosecond laser ablation of the Invar alloy and hole drilling for a shadow mask are studied. We used a regenerative amplified Ti-sapphire laser with a 1kHz repetition rate, 184fs pulse duration and 785nm wavelength. Femtosecond laser pulse was irradiated on the Invar alloy with air blowing at the condition of various laser peak power. An ablation characteristic of the Invar alloy was appeared non-linear at $125J/cm^2$ of energy fluence. For the application to a shadow mask, the hole drilling of the Invar alloy with the cross section of a trapezoidal shape was investigated. The ablated micro-holes were characterized using an atomic force microscopy(AFM). The optimal condition of hole pattern f3r a shadow mask was $4\;{\mu}m$ z-axis feed rate, 0.2mm/s circular velocity, $26.4{\mu}J$ laser peak power. With the optimal processing condition, the fine circular hole shape without burr and thermal damage was achieved. Using the femtoseocond laser system, it demonstrates excellent tool for the Invar alloy micro-hole drilling without heat effects and poor edge.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• American Studies
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• v.43 no.1
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• pp.83-97
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• 2020

"Behind a Mask" (1866) marks the new direction of Louisa May Alcott's artistic and personal life. Her European trip solidified her identity as a mature woman, most importantly as a mature American woman, one whose independence from Victorian stereotypes would, from now on, make her fortune and fame. Her sensational stories, especially "Behind a Mask," would tell truths that readers recognized but had rarely seen written. These truths would free them, and the author herself, to explore their talents as individuals. Henceforth, Alcott would embody the successful American artistic entrepreneur as one who shed the European domination of false titles and inherited wealth. These motifs of the transnational connection pervade the story, in the form of images and likenesses. Just as Alcott would soon, in two years, reach astonishing financial success with the publication of Little Women, her meteoric ascent parallels America's rise to power in the world's economy, which came about with almost alarming speed after the conclusion of the American Civil War.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.8B
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• pp.1188-1196
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• 2010

In this paper, worldwide standards and regulations on in-band/out-of-band emission characteristics of DMB broadcasting equipments are reviewed, and emission mask requirements of terrestrial low power DMB repeater under 10mW/MHz are analyzed. Out-of-band emission mask drafts suitable for single/multiple block low power repeaters are proposed. Validity and usefulness of the proposed drafts is evaluated and verified in the several experiments. Using the proposed standard, small-sized and cost-effective DMB repeater can be easily implemented to broaden DMB broadcasting coverage by reducing weak signal areas.