• 한국멀티미디어학회논문지
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• 제23권1호
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• pp.8-14
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• 2020

For a reliable fingerprinting system, improving fingerprint matching accuracy is crucial. In this paper, we try to improve a binary image fingerprint matching performance by utilizing auxiliary information, power mask, which is obtained while constructing fingerprint DB. The power mask is an expected robustness of each fingerprint bit. A caveat of the power mask is the increased storage cost of the fingerprint DB. This paper mitigates the problem by reducing the size of the power mask utilizing spatial correlation of an image. Experiments on a publicly-available image dataset confirmed that the power mask is effective in improving fingerprint matching accuracy.

• 한국콘텐츠학회논문지
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• 제16권11호
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• pp.754-766
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• 2016

가면의 힘과 <복면가왕>의 출연자 중 한 사람인 '우리 동네 음악대장(이하 '음악대장')'의 인기는 어떠한 관련성이 있으며 음악대장의 열풍은 동시대 한국 사회의 어떠한 측면을 투영하고 있는가? 이 연구는 이러한 질문들에 답하고자 하였다. 이를 위해 <복면가왕>의 여러 회차들 중 음악대장의 도전부터 탈락까지를 연구의 대상과 범위로 선정하였고, 가면의 힘을 이해하기 위해 가면의 기원 및 용도, 그리고 가면의 정체성 숨기기 및 노출시키기의 문화적 의미에 대해 살펴보았다. 연구 결과, 음악대장은 가면을 통해 익명적 전형성을 전시함으로써 정체성에 대한 궁금증을 증폭시켰다. 그는 또한 가면 아래에서 다소 거칠고 통제되지 않은 그러면서도 장난스러운 방식으로 기존 음악 프로그램의 형식과 매너에 저항적 몸짓을 보여주었다. 이러한 과정을 통해 음악대장은 주류 세계에 자신을 알리고자 하는 자기현시의 욕망을 노출하였다. 결과적으로 가면은 그것의 익명성과 저항성을 통해 자본주의 이데올로기의 계층 고착화에 저항할 수 있는 효율적인 도구로 기능하는데, 바로 이것이 가면의 힘이자 음악대장 열풍의 근원이라 할 수 있다.

• 한국전기전자재료학회논문지
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• 제21권2호
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• pp.111-117
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• 2008

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

• 한국전기전자재료학회논문지
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• 제18권10호
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• pp.945-949
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• 2005

We have grown GaN layers with in-situ SiN mask by metal organic chemical vapor deposition (MOCVD) and study the physical properties of the GaN layer. We have also fabricate PN junction light emitting diode (LED) to investigate the effect of the SiN mask on its optical property By inserting a SiN mask, (102) the full width at half maximum (FWHM) decreased from 480 arcsec to 409 arcsec and threading dislocation (TD) density decreased from $3.21{\times}10^9\;cm^{-2}$ to $9.7{\times}10^8\;cm^{-2}$. The output power of the LED with a SiN mask increased from 198 mcd to 392 mcd at 20 mA. We have thus shown that the SiN mask improved significantly the physical and optical properties of the GaN layer.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(1)
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• pp.325-328
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• 2000

This paper has been studied a rower amplifier for IMT-2000 handset. Circuit design is performed and optimized by using HP ADS RF software. Designed amplifier consist of 2 stage, has 25㏈ gain, over 27㏈m output power and about 40% power efficiency. Power amplifier operation frequency range is 1955${\pm}$70MHz. Mask layout of the designed Amplifier consisting of 4 mask. The measured results of these values are satisfying the specification of IMT-2000 handset.

• 한국정밀공학회지
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• 제24권12호
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• pp.50-56
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• 2007

Femtosecond laser ablation of the Invar alloy and hole drilling for a shadow mask are studied. We used a regenerative amplified Ti-sapphire laser with a 1kHz repetition rate, 184fs pulse duration and 785nm wavelength. Femtosecond laser pulse was irradiated on the Invar alloy with air blowing at the condition of various laser peak power. An ablation characteristic of the Invar alloy was appeared non-linear at $125J/cm^2$ of energy fluence. For the application to a shadow mask, the hole drilling of the Invar alloy with the cross section of a trapezoidal shape was investigated. The ablated micro-holes were characterized using an atomic force microscopy(AFM). The optimal condition of hole pattern f3r a shadow mask was $4\;{\mu}m$ z-axis feed rate, 0.2mm/s circular velocity, $26.4{\mu}J$ laser peak power. With the optimal processing condition, the fine circular hole shape without burr and thermal damage was achieved. Using the femtoseocond laser system, it demonstrates excellent tool for the Invar alloy micro-hole drilling without heat effects and poor edge.

• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.312-316
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• 2015

Through silicon via (TSV) technology holds the promise of chip-to-chip or chip-to-package interconnections for higher performance with reduced signal delay and power consumption. It includes high aspect ratio silicon etching, insulation liner deposition, and seamless metal filling. The desired etch profile should be straightforward, but high aspect ratio silicon etching is still a challenge. In this paper, we investigate the use of etch hard mask for finer TSVs etching to have clear definition of etched via pattern. Conventionally employed photoresist methods were initially evaluated as reference processes, and oxide and metal hard mask were investigated. We admit that pure metal mask is rarely employed in industry, but the etch result of metal mask support why hard mask are more realistic for finer TSV etching than conventional photoresist and oxide mask.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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• pp.457-461
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• 1996

An optimum design methodology for the power MOSFET's with a predetermined mask is proposed and verified by comparing with the results of MEDICI simulation and the data of commercially available devices. Optimization is completed by determining a doping concentration and a thickness of the epitaxial layer which satisfy a specific voltage and current rating requirements as well as a minimum on-resistance for the mask set. The commercial HEX-1 mask set with a die area of $40.4{\times}10^{-3}\;cm^2$ and a T0-220 package has the on-resistance of $1.5{\Omega}$ at 200 V/2.5 A rating while the M-1 mask from this study exhibits $0.6{\Omega}$ on-resistance at 200 V/6 A. The 60 % reduction in the on-resistance and 58 % enhancement in the current rating have been obtained by the proposed method.

• 미국학
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• 제43권1호
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• pp.83-97
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• 2020

"Behind a Mask" (1866) marks the new direction of Louisa May Alcott's artistic and personal life. Her European trip solidified her identity as a mature woman, most importantly as a mature American woman, one whose independence from Victorian stereotypes would, from now on, make her fortune and fame. Her sensational stories, especially "Behind a Mask," would tell truths that readers recognized but had rarely seen written. These truths would free them, and the author herself, to explore their talents as individuals. Henceforth, Alcott would embody the successful American artistic entrepreneur as one who shed the European domination of false titles and inherited wealth. These motifs of the transnational connection pervade the story, in the form of images and likenesses. Just as Alcott would soon, in two years, reach astonishing financial success with the publication of Little Women, her meteoric ascent parallels America's rise to power in the world's economy, which came about with almost alarming speed after the conclusion of the American Civil War.

• 한국통신학회논문지
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• 제35권8B호
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• pp.1188-1196
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• 2010

본 논문에서는 DMB 방송장치의 대역외발사강도에 대한 국내외 기준을 고찰하였으며, 10mW/MHz 이하의 지상파 소출력 중계기 방사 마스크 요구조건들을 분석하였다. 이를 토대로 소출력 DMB 중계기에 적합한 대역외방사특성 기준을 제안하였으며, 3개 블록들을 포함하는 멀티블록 중계기에 대한 기준도 함께 제안하였다. 제안된 기술기준의 타당성 및 유용성은 다양한 실험들을 통하여 입증하였다. 제안된 기술기준값을 이용하면 DMB 중계기의 소형화 및 저가화가 가능하며, 향후 DMB 음영지역 해소를 통한 방송구역 확대 등에 유용하게 사용될 수 있다.