• Journal of the Korean Society of Industry Convergence
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• v.26 no.6_1
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• pp.967-976
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• 2023

Currently, with the thriving development in the field of solar energy, the widespread adoption of solar grid-connected power conversion systems is rapidly expanding. As the market continues to grow, the efficiency of solar power conversion systems is steadily increasing, while prices are rapidly decreasing. Photovoltaic panels often produce low output voltages, and Boost converters are commonly employed to elevate and stabilize these voltages. They are also utilized for implementing Maximum Power Point Tracking (MPPT), ensuring the full utilization of solar power generation. Recently, synchronous control techniques have been introduced, using controllable switching devices like Si IGBT or SiC MOSFET to replace the diodes in the original circuits. However, this has raised concerns related to costs. This paper offers a compromise solution, considering both the performance and economic factors of the converter. It proposes a hybrid high-efficiency synchronous converter structure that combines Si IGBT and SiC MOSFET. Additionally, the proposed topology has been practically implemented and tested, with results confirming its feasibility and cost-effectiveness.

• Proceedings of the KIPE Conference
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• 2016.07a
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• pp.161-162
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• 2016

일반적으로 사용되는 전력 스위치 소자에는 IGBT, MOSFET 등이 있다. 그 중 IGBT 소자는 용량 특성이 우수하여 고 용량 인버터에서 사용가능하다는 장점이 있으나 턴 오프 동작 시 손실 특성과 다이오드 역 회복 특성으로 인해 고속 스위칭 동작에는 부적합하다는 단점이 있다. 최근에는 SiC를 사용한 MOSFET의 개발이 진행되어 MOSFET의 대용량화 및 스위칭 손실저감이 이루어졌고 이에 따라, 본 논문에서는 SiC MOSFET을 이용한 고속 스위칭 인버터를 제안하였으며 그 특성을 기존의 IGBT 소자를 이용한 인버터와 비교분석하고 이를 시뮬레이션을 통해 검증하였다.

• Journal of the Korean Society of Industry Convergence
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• v.10 no.4
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• pp.227-233
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• 2007

In case of design of a rectifier to supply high current, To select switching frequency of semiconductor switches affect absolutely the design of the LC filter value in an power conversion circuit. The conventional rectifier by using MOSFET is no use in high current equipments because of small drain-source current. To solve this problem, this paper proposes to design of high capacity rectifier by parallel driving of MOSFET in the single half bridge DC-DC converter. This method can be able to develop high current rectifier by distributed drain-source current. The proposed scheme is able to expect a decrease in size, weight and cost of production by decreasing the LC filter value and increasing maximumly the switching frequency. The validity of the proposed parallel driving strategy is verified through computer-aided simulations and experimental results.

• Proceedings of the IEEK Conference
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• 2009.05a
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• pp.159-162
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• 2009

The necessity of radiation dosimeter with precise measurement of radiation dose is increased and required in the field of spacecraft, radiotheraphy hospital, atomic plant facility, etc. where radiation exists. Until now, a low power commercial metal-oxide semiconductor(MOS) transistor has been tested as a gamma radiation dosimeter. The measurement error between the actual value and the measurement one can occur since the MOSFET(MOS field-effect transistor) dosimeter, which is now being used, has two gates with same width. The measurement value of dosimeter depends on the variation of threshold voltage, which can be affected by the environment such as temperature. In this paper, a radiation dosimeter having a pair of MOSFET is designed in the same silicon substrate, in which each of the MOSFETs is operable in a bias mode and a test mode. It can measure the radiation dose by the difference between the threshold voltages regardless of the variation of temperature.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.10a
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• pp.606-609
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• 2003

It is known that 1/f noise of MOSFET is generated by superposition of single Random Telelgraph Signal (RTS). In this study, jitter from 1/f noise of MOSFET is analysed with RTS supplied to one of the nodes of the ring oscillator under investigation. Jitter rates are investigated as the number of stage, power supply voltage, and the amplitude of RTS change.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.05a
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• pp.321-324
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• 2001

The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased packing density. This paper has compared Micro-Tec with ISE-TCAD. This paper investigates LDD MOSFET using two simulators. Bias condition is applied to the devices with gate lengths 180nm. We have presented MOSF ET's characteristics such as I-V characteristic, electric field. and compared with Micro-Tec and ISE-TCAD.

• Proceedings of the KIPE Conference
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• 2002.07a
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• pp.759-762
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• 2002

A ZCT(Zero Current Transition) PWM(Pulse-Width-Modulation) boost converter using parallel MOSFET switch is proposed in this paper. The IGBT(main switch) of the proposed converter is always turned on with zero current switching and turned off with zero current/zero voltage switching. The MOSFET(auxiliary switch) is also operates with soft switching condition. In addtion to, the proposed converter eliminates the reverse recovery current of the freewheeling diode by adding the resonant inductor, Lr, in series with the main switch. Therefore, the turn on/turn off switching losses of switches are minimized and the conduction losses by using IGBT switch are reduced. In addition to, using parallel MOSFET switch overcomes the switching frequency limitation occurred by current tail. As mentioned above, the characteristics are verified through experimental results.

• Journal of Korean Vacuum Science & Technology
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• v.3 no.1
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• pp.66-73
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• 1999

In this paper, the design of one-chip FED system integrated with driving circuits in reported on the basis of MOSFET controlled FEA (MCFEA). To integrate a MOSFET with a FEA efficiently, a new fabrication process is proposed. It is confirmed that the MOSFET with threshold voltage of about 2volts controls the FEA emission current up to 20 ${\mu}$A by applying driving voltage of 15 volts, which is enough current level to utilize the MCFEA as a pixel for FED. The drain breakdown voltage of the MOSFET is measured to be 70 volts, which is also high enough for 60 volt operation of FED. The circuits for row and column driver are designed stressing on saving area, reducing malfunction probability and consuming low power to maximize the merit of on-chip driving circuits. Dynamic logic concept and bootstrap capacitors are used to meet these requirements. By integrating the driving circuit with FEA, the number of external I/O lines can be less than 20, irrespectively of the number of pixels.

• Proceedings of the KIPE Conference
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• 2014.07a
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• pp.468-469
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• 2014

본 논문은 AC 직구동 LED를 위한 MOSFET 기반의 위상 제어 조광기에 관한 것이다. 기존의 트라이악을 기반으로 하는 조광기는 트라이악 소자 특성에 많은 영향을 받는다. 트라이악은 래칭 전류와 유지 전류의 특성을 가지고 있다. 특히 래칭 전류는 조광기의 최소 조광 범위를 제한하는 요소로 작용한다. 또한 최대 조광 범위는 트라이악을 구동하기 위한 에너지에 의해 제한된다. 이러한 단점들을 극복하기 위해 본 논문에서는 트라이악이 아닌 MOSFET을 기반으로 하는 조광기를 제안한다. MOSFET은 래칭 전류, 유지 전류의 특성이 없으며 전압 구동 소자이기 때문에 기존의 조광기에 비해서 훨씬 넓은 조광 범위를 가진다. 또한, 제안하는 모델은 기존의 트라이악 기반의 조광기와 핀투핀 호환이 가능하다. 마지막으로 실제 실험을 통해 제안하는 조광기의 성능을 검증하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.133-134
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• 2005

When Power MOSFET is operated, it causes lots of heat, which influences negatively on the characteristics of the devices and shorten the lifespan of them. Therefore, a heat sink should be mounted on to emit the heat. In this experiment, we've found the changes of the characteristics of Thermal Transient of MOSFET when a heat sink is applied. In addition, we've found other changes when heat sink compound is applied as well.