• 해양환경안전학회지
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• 제25권4호
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• pp.498-503
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• 2019

해양산업분야에서는 극심한 대기오염으로 인하여 전기추진선박에 대한 관심이 높아지고 있다. 이로 인해 선내 전력품질의 저하를 개선하기 위한 연구가 활발히 진행되고 있다. 기존 DFE 정류기의 입력전류 고조파 함유량을 완화시키기 위해 수동형필터, 노치필터, 능동형필터 등을 이용한 다양한 방법이 등장하였다. 그 중에서도 능동필터의 일종인 AFE(Active Front End) 정류장치가 우수한 기술로써 평가받고 있다. 본 논문에서는 공간벡터변조에 의한 AFE정류장치의 전류제어방식을 제안하였다. 기존의 히스테리시스 방식, 삼각파 변조방식 및 공간벡터변조방식을 PSIM을 사용해 시뮬레이션을 수행하여 비교, 분석하였고, 그 결과 공간벡터변조방식이 구조가 간단하고 성능이 가장 우수함을 확인하였다.

• 한국세라믹학회지
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• 제56권1호
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• pp.71-76
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• 2019

Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

• 대한금속재료학회지
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• 제46권10호
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• pp.683-690
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• 2008

In order to develop transparent electrodes for high efficiency GaN-based light emitting diodes (LEDs), the electrical and optical properties of the electron beam evaporated ITO contacts have been investigated as a function of the deposition temperature and flow rate of oxygen during the deposition. As the deposition temperature increases from $140^{\circ}C$ to $220^{\circ}C$, the resistivity of the ITO films decreases slightly from $4.0{\times}10^{-4}{\Omega}cm$ to $3.3{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films significantly increases from 67% to 88% at the wavelength of 470 nm. When the flow rate of oxygen during the deposition increases from 2 sccm to 4 sccm, the resistivity of the ITO films increases from $3.6{\times}10^{-4}{\Omega}cm$ to $7.4{\times}10^{-4}{\Omega}cm$, meanwhile the transmittance of the ITO films increases from 86% to 99% at 470 nm. Blue LEDs fabricated with the electron beam evaporated ITO electrode show that the ITO films deposited at $200^{\circ}C$ and 3 sccm of the oxygen flow rate give a low forward-bias voltage of 3.55 V at injection current of 20 mA with a highest output power.

• Tribology and Lubricants
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• 제38권3호
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.20-20
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• 2003

We developed 30 ㎽-AlInGaN based violet laser diodes. The fabrication procedures of the laser diodes are described as follows. Firstly, GaN layers having very low defect density were grown on sapphire substrates by lateral epitaxial overgrowth method. The typical dislocation density was about 1-3$\times$10$^{6}$ /$\textrm{cm}^2$ at the wing region. Secondly, AlInGaN laser structures were grown on LEO-GaN/sapphire substrates by MOCVD. UV activation method, instead of conventional annealing, was conducted to achieve good p-type conduction. Thirdly, ridge stripe laser structures were fabricated. The cavity mirrors were formed by cleaving method. Three pairs of SiO$_2$ and TiO$_2$ layers were deposited on the rear facet for mirror coating. Lastly, laser diode chips were mounted on AlN submount wafers by epi-down bonding method. The lifetime of the laser diodes was over 10,000 hrs at room temperature under automatic power controlled condition. We expect the performance of the LDs to be improved by the optimization of the growth and fabrication process. The detailed characteristics and important issues of the laser diodes will be discussed at the conference.

• 전기전자학회논문지
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• 제26권1호
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• pp.50-55
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• 2022

SiC는 차세대 전력반도체의 핵심 재료로 넓은 밴드갭과 높은 절연파괴강도, 열전도율을 가지고 있지만 deep level defect와 같은 다양한 문제를 야기하는 결함이 존재한다. SiC에서 나타나는 defect는 물성에서 나타나는 defect와 계면에서 나타나는 interface trap 2가지로 나뉜다. 본 논문은 상온 (300 K)에서 보고되는 Z_1/2 trap concentration 0 ~ 9×10¹⁴ cm^-3을 SiC substrate와 epi layer에 적용하여 turn-on 특성을 알아보고자 한다. 전류밀도와 SRH(Shockley-Read-Hall), Auger recombination을 통해 구조 내 재 결합률을 확인하였다. trap concentration이 증가할수록 turn-on시 전류밀도와 재 결합률은 감소하며 Ron은 0.004에서 0.022 mΩ으로 약 550% 증가하였다.

• Medical Lasers
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• 제8권2호
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• pp.50-58
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• 2019

Background and Objectives Low-level light therapy (LLLT) is an application of low-power light for various purposes such as promoting tissue repair, reducing inflammation, causing analgesia, etc. A previous study suggested the effect of light emitting diode (LED) light with the wavelength of 740 nm for promoting wound healing of corneal epithelial cells. This current study aimed to confirm the effect of LLLT for managing inflammation of a dry eye disease (DED) mouse model. Materials and Methods A total of 50C57BL/6 female mice were randomly grouped into 5 groups to compare the effect of LLLT:1) Control group, 2) Only LLLT group, 3) Dry eye group, 4) LLLT in dry eye group, and 5) Early treatment group. DED was induced with 4 daily injections of scopolamine hydrobromide and desiccation stress for 17 days, and LLLT at 740 nm was conducted once every 3 days. To analyze the effect of LLLT on the DED mouse model, tear volume, corneal surface irregularities, and fluorescence in stained cores were measured, and the level of inflammation was assessed with immunohistochemistry. Results The DED mouse model showed significant deterioration in the overall eye condition. After LLLT, the amount of tear volume was increased, and corneal surface irregularities were restored. Also, the number of neutrophils and the level of inflammatory cytokines significantly decreased as well. Conclusion This study showed that LLLT at 740 nm was effective in controlling the corneal conditions and the degree of inflammation in DED. Such findings may suggest therapeutic effects of LLLT at 740 nm on DED.

• 한국재료학회지
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• 제34권2호
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• pp.111-115
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• 2024

Silicon carbide (SiC) has emerged as a promising material for next-generation power semiconductor materials, due to its high thermal conductivity and high critical electric field (~3 MV/cm) with a wide bandgap of 3.3 eV. This permits SiC devices to operate at lower on-resistance and higher breakdown voltage. However, to improve device performance, advanced research is still needed to reduce point defects in the SiC epitaxial layer. This work investigated the electrical characteristics and defect properties using DLTS analysis. Four deep level defects generated by the implantation process and during epitaxial layer growth were detected. Trap parameters such as energy level, capture-cross section, trap density were obtained from an Arrhenius plot. To investigate the impact of defects on the device, a 2D TCAD simulation was conducted using the same device structure, and the extracted defect parameters were added to confirm electrical characteristics. The degradation of device performance such as an increase in on-resistance by adding trap parameters was confirmed.

• 대한전자공학회논문지TC
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• 제43권5호
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• pp.59-67
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• 2006

외부에서 주입된 비간섭성 광원 (BLS: Broadband Light Source)에 파장 잠김된 패브리 페롯 레이저 다이오드(wavelength-locked F-P LD: wavelength-locked Fabry-Perot Laser Diode)를 광원으로 사용해서 50 GHz의 채널 간격을 갖는 양방향 장거리 저송 35 채널 고밀도 파장분할 다중방식 수동형 광 가입자망 (DWDM-PON: Dense Wavelength Division Multiplexing-Passive Optical Network)을 구현한다. 장거리 전송을 위해 F-P LD의 발진 모드를 제어하여 F-P LD에 주입이 요구되는 BLS 파워를 감소시키면서 출력 파워를 높인다. 결과적으로 광 증폭기의 사용 없이 70 km 단일 모드 광섬유를 통해 가입자당 100 Mb/s 이상의 대역폭을 제공하면서 모든 상하향 70 채널에서 손실 없이 이더넷 패킷을 전송하였다. 구현된 장거리 저송 DWDM-PON은 다수의 중앙국을 바이패스(Bypass)함으로써 메트로망과 가입자망을 통합할 수 있다. 또한, 구현한 DWDM-PON은 상용의 어븀 첨가 광섬유 증폭기를 광대역 광원으로 사용하여 80 가입자를 수용할 수 있으며, 반도체 광대역 광원을 사용하면, 100 가입자 이상의 수용이 가능하다.

• 센서학회지
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• 제11권6호
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• pp.358-364
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• 2002

본 논문에서는 백금박막 온도센서의 $0^{\circ}C$, $100{\Omega}$ 세팅을 위해 355nm 파장을 갖는 자외선 레이저를 이용하였다. 국제적으로 온도센서의 A-class 기준오차는 $0^{\circ}C$에서 ${\pm}0.060{\Omega}$이다. 실제적으로 이 값은 $0.15^{\circ}C$이하에 해당하는 오차로 저항체 제작시 고정밀 가공 기술을 필요로 한다. 가공에 이용된 355nm DYP(Diode-Pumped YAG) 레이저는 power : 37mW, rep rate 주파수 : 200Hz 그리고 bite size : $7.5{\mu}m$에서 $1{\sim}1.5{\mu}m$ 두께의 백금박막을 가장 안전하게 가공할 수 있었으며, 가공선폭은 $10{\mu}m$ 안팎임을 확인하였다. 그리고 사진식각 공정기술을 이용하여 제작된 $2"{\times}2"$ 기판내의 96개(4 by 24) 저항체는 상온 $25^{\circ}C$에서 $79{\sim}90{\Omega}$ : 42.7%, $91{\sim}102{\Omega}$ : 57.3%의 비율로 각각 제작되어졌다. $109.73{\Omega}$를 목표 값으로 $25^{\circ}C$에서 자외선 레이저를 이용하여 가공한 결과, 82.3%가 가공오차가 ${\pm}0.03{\Omega}$이하에 들어왔으며 나머지 17.7%도 국제규격 A-Class내인 ${\pm}0.06{\Omega}$내에 포함되었다.