• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• Journal of the Korean Society for Precision Engineering
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• v.25 no.9
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• pp.78-85
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• 2008

Piezoelectric materials have been investigated as vibration energy converters to power wireless devices or MEMS devices due to the recent low power requirements of such devices and the advancement in miniaturization technology. Piezoelectric power generation can be an alternative to the traditional power source-battery because of the presence of facile vibration sources in our environment and the potential elimination of the maintenance required for large volume batteries. This paper represents the new power source which supplies energy device node. This system, called "energy harvesting system", with piezo materials scavenges extra energy such as vibration and acceleration from the environment. Then it converts the mechanical energy scavenged to electrical energy for powering device This paper explains the properties of piezo material through theoretical analysis and experiments The developed system provides a solution to overcome the critical problem of making up wireless device networks.

• Journal of Electrical Engineering and Technology
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• v.9 no.6
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• pp.2168-2180
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• 2014

In this paper, a generalized power loss algorithm for multilevel neutral-point clamped (NPC) PWM inverters is presented, which is applicable to any level number of multilevel inverters. In the case of three-level inverters, the conduction loss depends on the MI (modulation index) and the PF (power factor), and the switching loss depends on a switching frequency, turn-on and turn-off energy. However, in the higher level of inverters than the three-level, the loss of semiconductor devices cannot be analyzed by conventional methods. The modulation depth should be considered in addition, to find the different conducting devices depending on the MI. In a case study, the power loss analysis for the three- and five-level NPC inverters has been performed with the proposed algorithm. The validity of the proposed algorithm is verified by simulation for the three-and five-level NPC inverters and experiment for three-level NPC inverter.

• Journal of Power Electronics
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• v.14 no.6
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• pp.1272-1280
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• 2014

This paper presents solutions for fault detection and diagnosis of two-level, three phase voltage-source inverter (VSI) topologies with IGBT devices. The proposed solutions combine redundant standby VSI structures and contactors (or relays) to improve the fault-tolerant capabilities of power electronics in applications with safety requirements. The suitable combination of these elements gives the inverter the ability to maintain energy processing in the occurrence of several failure modes, including short-circuit in IGBT devices, thus extending its reliability and availability. A survey of previously developed fault-tolerant VSI structures and several aspects of failure modes, detection and isolation mechanisms within VSI is first discussed. Hardware solutions for the protection of power semiconductors with fault detection and diagnosis mechanisms are then proposed to provide conditions to isolate and replace damaged power devices (or branches) in real time. Experimental results from a prototype are included to validate the proposed solutions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.4
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• pp.276-281
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• 2012

Power semiconductor devices are widely used as high voltage applications to inverters and motor drivers, etc. The blocking voltage is one of the most important parameters for power semiconductor devices. Generally most of field effect concentrations shows on the edge of power devices. Can be improve the breakdown characteristic using edge termination technology. In this paper, considering the variables that affect the breakdown voltage and optimization of parameters result for 600 V Super Junction MOSFET Field ring.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.643-645
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• 1996

In order to improve the voltage profile of the system we introduce the reactive power devices. However, it is difficult to know which bus will be the most effective bus when we inject the reactive power supplier in it. This paper systematically determines indices of the system in order to locate reactive power devices in a power system. To prove the validity and effectiveness of the system we apply the proposed method to the 9 bus system.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.280-283
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• 2004

This paper discribes the design concept, fabrication process and measuring result of 2.5kV Gate Commutated Thyristor devices. Integrated gate commutated thyristors(IGCTs) is the new power semiconductor device used for high power inverter, converter, static var compensator(SVC) etc. Most of the ordinary GTOs(gate turn-off thyristors) are designed as non-punch-through(NPT) concept; i.e. the electric field is reduced to zero within the N-base region. In this paper, we propose transparent anode structure for fast turn-off characteristics. And also, to reach high breakdown voltage, we used 2-stage bevel structure. Bevel angle is very important for high power devices, such as thyristor structure devices. For cathode topology, we designed 430 cathode fingers. Each finger has designed $200{\mu}m$ width and $2600{\mu}m$ length. The breakdown voltage between cathode and anode contact of this fabricated GCT device is 2,715V.

• Journal of Semiconductor Engineering
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• v.2 no.3
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• pp.142-153
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• 2021

Recent research on synaptic devices has been reviewed from the perspective of hardware-based neuromorphic computing. In addition, the backgrounds of neuromorphic computing and two training methods for hardware-based neuromorphic computing are described in detail. Moreover, two types of memristor- and CMOS-based synaptic devices were compared in terms of both the required performance metrics and low-power applications. Based on a review of recent studies, additional power-scalable synaptic devices such as tunnel field-effect transistors are suggested for a plausible candidate for neuromorphic applications.

• Proceedings of the KIPE Conference
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• 2016.11a
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• pp.63-64
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• 2016

This paper deal with single module design of 13.2kVrms/10kVA solid state transformers exchanging conventional transformer. We can design compact hardware system to reduce size and get higher switching frequency by using SiC devices. As a result by comparing simulation results with experiment result, it is verified.

• KSII Transactions on Internet and Information Systems (TIIS)
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• v.10 no.2
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• pp.444-461
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• 2016

A power-saving mechanism for smartphone devices is developed by analyzing the features of data that are received from Internet of Things (IoT) sensors devices to optimize the data processing policies. In the proposed GreenIoT architecture for power-saving in IoT, the power saving and feedback mechanism are implemented in the IoT middleware. When the GreenIoT application in the power-saving IoT architecture is launched, IoT devices collect the sensor data and send them to the middleware. After the scanning module in the IoT middleware has received the data, the data are analyzed by a feature evaluation module and a threshold analysis module. Based on the analytical results, the policy decision module processes the data in the device or in the cloud computing environment. The feedback mechanism then records the power consumed and, based on the history of these records, dynamically adjusts the threshold value to increase accuracy. Two smart living applications, a biomedical application and a smart building application, are proposed. Comparisons of data processed in the cloud computing environment show that the power-saving mechanism with IoT architecture reduces the power consumed by these applications by 24% and 9.2%.