• The Transactions of the Korean Institute of Electrical Engineers P
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• v.57 no.3
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• pp.209-214
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• 2008

A precision guided kit is a GPS/INS guided range extension system to improve the accuracy and availability of existing dumb bombs. The PSD(power supply device) installed in the GPS guided kit supplies electrical power to all electrical loads in the kit. In this paper, design process and test results of the PSD have been presented. Additionally, the performance results of the PSD during actual ground and flight tests have been described.

• Proceedings of the Korea Society for Simulation Conference
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• 1999.10a
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• pp.272-277
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• 1999

The necessity of voice recording device was increased using voice signal IC with designed LSI/VLSI. The control unit which developed here voice recorder has low power dissipation, portable, and comfortable using voice source. However, the Korea voice recorder abilities far behind of foreign products for its performance and size on sailing. So we used Chua circuit to improvement voice quality abilities after minimize power supply device and circuit by designing voice recording device into lower power dissipation power circuit.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.121-127
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• 2016

We propose a algorithm to calculate power factor of fundamental waveform in an environment where the voltage and current have been distorted by harmonics. In the proposed power factor computation algorithm, voltage and current are converted to rotating DQ reference frame, and power factor is calculated from active power and reactive power. We compare the proposed method with the conventional power factor measurement method as mathematically. In a condition that voltage and current are distorted by harmonics, the proposed method accurately measure the power factor of fundamental wave, and it is confirmed by simulation using MATLAB. If the proposed power factor measurement method is applied to an automatic power factor control system, a power factor compensation performance can be maximized in harmonic distortion environment. As a result, it is possible to reduce electricity prices, reduce line loss, increase load capacity, ensure the transmission margin capacity, and reduce the amount of power generation.

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.2323-2328
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• 2011

There have been many changes in Subway train types since SeoulMetro opened the Line No.1 in 1974. Propulsion control device has changed many times following the generations of control method from resistance control method which uses large resistor for the traction motor control to chopping control which uses power semiconductors and finally to inverter control. Railroad vehicle propulsion control device refers to devices such as converter/inverter which supply power for subway operation, power conversion equipment like small switching-mode power supply and traction motor. In this paper, we will analyze every part of railroad vehicle propulsion control device of SeoulMetro so we can find problems in the subway operation. And we will present propulsion control device model which makes minimized failures, efficient maintenance possible when replacing railroad vehicle later. By doing this, we hope to ensure stability and improve energy efficiency to the top.

• The KSFM Journal of Fluid Machinery
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• v.15 no.4
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• pp.42-49
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• 2012

This study is performance estimation of wind augmentation device for BiWP(Building-integrated Wind Power) which recently attracts attention as a local power. various structures are installed on a rooftop of residential complex buildings. Changing a profile of these, we designed a configuration that is able to capture much air and increase exit velocity. To estimate wind augmented effect of this device, we compared numerical analysis results with wind tunnel test results. Results show that exit velocity is increased from 24% to 60% by wind augmented device on a rooftop of building.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.4
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• pp.284-288
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• 2013

Power MOSFETs(Metal Oxide Semiconductor Field Effect Transistor) operate as energy control semiconductor switches. In order to reduce energy loss of the device during switch-on state, it is essential to increase its conductance. We have experimental results and explanations on the doping profile dependence of the electrical behavior of the vertical MOSFET. The device is fabricated as $8.25{\mu}m$ cell pitch and $4.25{\mu}m$ gate width. The performances of device with various p base doping concentration are compared at Vth from 1.77 V to 4.13 V. Also the effect of the cell structure on the on-resistance and breakdown voltage of the device are analyzed. The simulation results suggest that the device optimized for various applications can be further optimized at power device.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.1-6
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• 2016

Ensuring the secure operation of power systems has become an important and critical matter during the present time, along with the development of large, complex and load-increasing systems. Security constraints such as the thermal limits of transmission lines and bus-voltage limits must be satisfied under all of a system’s operational conditions. An alternative solution to improve the security of a power system is the employment of Flexible Alternating-Current Transmission Systems (FACTS). FACTS devices can reduce the flows of heavily loaded lines, maintain the bus voltages at desired levels, and improve the stability of a power network. The Unified Power Flow Controller (UPFC) is a versatile FACTS device that can independently or simultaneously control the active power, the reactive power and the bus voltage; however, to achieve such functionality, it is very important to determine the optimal location of the UPFC device, with the appropriate parameter setting, in the power system. In this paper, a genetic algorithm (GA) method is applied to determine the optimal location of the UPFC device in a network for the enhancement of the power-system loadability and the minimization of the active power loss in the transmission line. To verify our approach, simulations were performed on the IEEE 14 Bus, 30 Bus, and 57 Bus test systems. The proposed work was implemented in the MATLAB platform.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.40 no.10
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• pp.1986-1993
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• 2015

We investigate the optimal resource and power allocation for device-to-device (D2D) communications in a multicell environment. When D2D links reuse the cellular radio resources, each D2D user will interfere with a cellular link and other D2D links, in its own cell as well as in adjacent cells. Under such situation, we propose a coordinated resource allocation scheme that can handle the intercell interferences as well as the intracell interference. For a given resource allocation, we also formulate a power optimization problem and present an algorithm for finding the optimal solution. The resource and power allocation algorithms are designed to maximize the achievable rate of the D2D link, while limiting the generated interference to the cellular link. The performance of the proposed algorithms is evaluated through simulations in a multicell environment. Numerical results are presented to verify the coordination gain in the resource and power allocation.

• Electronics and Telecommunications Trends
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• v.36 no.3
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• pp.53-64
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• 2021

As the 5G service market is expected to grow rapidly, the development of high-power, high-efficiency power amplifiers for the 5G communication infrastructure is indispensable. Gallium nitride (GaN) is attracting great interest as a key device in power devices and integrated circuits due to its wide bandgap, high carrier concentration, high electron mobility, and high-power saturation characteristics. In this study, we investigate the technology trends of Ka-band GaN radio frequency (RF) power devices and integrated circuits for operation in the millimeter-wave band of recent 5G mobile communication services. We review the characteristics of GaN RF high electron mobility transistor (HEMT) devices to implement power amplifiers operating at frequencies around 28 GHz and compare the technology of foreign companies with the device characteristics currently developed by the Electronics and Telecommunication Research Institute (ETRI). In addition, the characteristics of Ka-band GaN monolithic microwave integrated circuit (MMIC) power amplifiers manufactured using various GaN HEMT device technologies are reviewed by comparing characteristics such as frequency band, output power, and output power density of integrated circuits. In addition, by comparing the performance of the power amplifier developed by ETRI, the current status and future direction of domestic GaN power devices and integrated circuit technology will be discussed.

• Nuclear Engineering and Technology
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• v.34 no.5
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• pp.502-516
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• 2002

Wolsong NPP are CANDU6 type reactors and there are 4 CANDU6 type reactors in commercial operation. CANDU type reactors require on-power refuelling by two remote controlled F/Ms (Fuelling Machines). Most of channels, fuel bundles are float by channel coolant flow and move toward downstream, however in about 30% of channels the coolant flow are not sufficient enough to carry fuel bundles to downstream. For those channels a special device, FARE (Flow Assist Ram Extension) device, is used to create additional force to push fuel bundles. It has been showing that during fuelling operation of some channels the channel coolant flow rate is reduced below specified limit (80% of normal), and consequently trip alarm signal turns on. This phenomenon occurs on selected channels that are instrumented for the channel flow and required to use the FARE device for refuelling. Hence it is believed that the FARE device causes the problem. It is also suspected that other channels that do not use the FARE device for refuelling might also go into channel flow low state. The analysis revealed that the channel How low occurs as the FARE device is introduced into the core and disappears as the FARE device is removed from the core. This paper presented the FARE device behavior, detailed fuelling operation sequence with the FARE device and effect on channel flow low phenomena. The FARE device components design changes are also suggested, such as increasing the number or now holes in the tube and flow slots in the ring orifice.