• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.557-560
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• 2004

In this study, we design the one-chip PWM IC for SMPS (Switching Mode Power Supply) application. We determine the IC spec. and simulated each block of PWM IC (Reference, Error amp., Comparator, Oscillator) with Smart Spice (SILVACO Circuit Simulation Tool). Reference circuits generate constant voltage(5V) in the various of power supply and temperature condition. Error amp. is designed with large DC gain (${\simeq}65dB$), unity frequency (${\simeq}190kHz$) and large PM($75^{\circ}$).Saw tooth generators operate with 20K oscillation frequency (external resistor, capacitor).

• Journal of IKEEE
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• v.16 no.3
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• pp.177-181
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• 2012

This paper introduces a thermal compensation circuit with improved compensation characteristic for amplifiers to provide stable output power regardless environmental temperature. The proposed thermal compensation circuit is composed of two branchline couplers having two diodes between them. And, the thermistor whose resistance varies significantly with temperature inversely and a operational amplifiers, so called as OP-amp, control the diodes in the compensations circuit to realize more effective thermal compendation characteristic compared with conventional circuit.

• Proceedings of the KIEE Conference
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• 2004.11c
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• pp.632-634
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• 2004

First for high-qualify images and reducing process-error and driving speed, the designed 8-bit data driving circuit consists of a constant transconductance bias circuit, D-F/Fs by shift registers using static transmission gates, 1st latch and 2nd latch by tristate inverters, level shifters, current steering segmented D/A converters by 4MSB thermometer decoder and 4LSB weighted type. Second, we designed gray amp for power saving. These data driving circuits are designed with $0.35-{\mu}m$ CMOS technologies at 3.3 V and 18 V power supplies and simulated with HSPICE.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.2
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• pp.16-21
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• 1993

A newly advanced method of characterizing large signal S-parameters of TR using the overall gain of normally operating TR is proposed based on the load pull method which gives the matching network only. Large signal S-parameters of TR are characterized from the circuit which consists of TR and 3dB Coupler Tuners at the input and output ports, and which is B class biased with 0dBminput signal. Amplifier can be designed to have 8.5dB gain at 770MHz using the calculated large signal S-parameters with the resulting gain of 8.786dB.

• 한국정보통신설비학회:학술대회논문집
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• 2004.08a
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• pp.23-26
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• 2004

본 논문은 전력증폭기의 효율을 개선하기 위한 도허티증폭기의 특성 분석에 관한 것이다. 도허티증폭기의 특성을 분석하기 위해 2-tone신호와 WCDMA신호를 사용하였고 180W PEP LDMOSFET을 사용하였다. 제작된 도허티증폭기는 출력 전력 20W에서 약 10%정도의 효율개선을 나타냈지만 선형성이 저하되는 특성을 나타내었다. 저하된 선형성을 개선시키기 위해 carrier 증폭기(Amp. A)와 peaking 증폭기(Amp. B)를 각각 변화하였으며, carrier 증폭기는 높은 PEP(Peak Envelope Power)와 적은 Id(drain current)가 되도록 하였고, peaking 증폭기는 높은 이득과, 낮은 gate bias에서 IMD(Intermodulation Distortion)가 상쇄되도록 하였다. 최종 측정 결과 출력전력 20W에서 선형성은 class AB증폭기와 비교하여 유사한 결과를 얻었으며, 효율은 약 10% 이상의 개선을 얻을 수 있었다.

• The Transactions of the Korean Institute of Power Electronics
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• v.21 no.1
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• pp.65-71
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• 2016

This study investigates a high-accuracy alternate QD model to estimate the characteristics of induction motor under light loads. To demonstrate the usefulness of the alternate QD model, a maximum torque per amp (MTPA) control based on the alternate model is shown to outperform MTPA control based on the standard QD model. The experimental study conducted in this work exhibits that the MTPA control based on the alternate QD model tracks torque commands between 20 Nm and 30 Nm with 5% error, whereas the MTPA control based on the standard QD model generates torques lower by over 23% compared with the aforementioned torque commands. This result indicates that the alternate QD model is a highly accurate model for induction motors under light loads.

• Journal of the Korea Institute of Military Science and Technology
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• v.26 no.3
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• pp.227-233
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• 2023

In this paper, to substitute the existing TWTA(Travailing Wave Tube Amplifier) component in small radar system, we developed the Ku band SSPA(Solid-State Power Amplifier) based on the fabrication of power MMIC (Monolithic Microwave Integrated Circuit) chips. For the development of the 500 W SSPA, the 40 W-grade power MMIC was designed by ADS(Advanced Design System) at Keysight company with UMS GH015 library, and was processed by UMS foundry service. And 70 W main power modules were achieved the 2-way T-junction combiner method by using the 40 W-grade power MMICs. Finally, the 500 W SSPA was fabricated by the wave guide type power divider between the drive power amplifier and power modules, and power combiner with same type between power modules and output port. The electrical properties of this SSPA had 504 W output power, -58.11 dBc spurious, 1.74 °/us phase variation, and -143 dBm/Hz noise level.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.1
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• pp.41-46
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• 2003

In this paper, We designed the millimeter wave power amplifier employing PBG. The amplifier has the bandwidth from 24.6 GHz to 24.75 GHz. For improvement of the Linearity and the PAE of the amplifier, PBG was designed to suppress the 2nd harmonic of the Amplifer. The Proposed PBG have smaller area and better rejection characteristic than conventional PBG structure. The fabricated PBG shows 35 dB or more of rejection characteristic at the 2nd harmonic band of the amplifier. The amplifier has balanced structure having lange coupler which means better input$.$output return loss and higher output power.

• ETRI Journal
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• v.31 no.6
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• pp.717-724
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• 2009

This paper describes a 1.2 V 12 b 60 MS/s CMOS analog front-end (AFE) employing low-power and flexible design techniques for image signal processing. An op-amp preset technique and programmable capacitor array scheme are used in a variable gain amplifier to reduce the power consumption with a small area of the AFE. A pipelined analog-to-digital converter with variable resolution and a clock detector provide operation flexibility with regard to resolution and speed. The AFE is fabricated in a 0.13 ${\mu}m$ CMOS process and shows a gain error of 0.68 LSB with 0.0352 dB gain steps and a differential/integral nonlinearity of 0.64/1.58 LSB. The signal-to-noise ratio of the AFE is 59.7 dB at a 60 MHz sampling frequency. The AFE occupies 1.73 $mm^2$ and dissipates 64 mW from a 1.2 V supply. Also, the performance of the proposed AFE is demonstrated by an implementation of an image signal processing platform for digital camcorders.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2000.11a
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• pp.167-170
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• 2000