• 제목/요약/키워드: Potential Probe

검색결과 318건 처리시간 0.025초

톱니파 및 삼각파 프로브 bias 전압에 의해 측정된 전자에너지 분포함수의 비교에 관한 연구 (A Study on the Comparision of Electron Energy Distribution Function measured by sawtooth and triangle waveform probe bias voltages)

  • 김두환;신중흥;김규섭;박영찬;조정수;박정후
    • 대한전기학회:학술대회논문집
    • /
    • 대한전기학회 1996년도 하계학술대회 논문집 C
    • /
    • pp.1844-1847
    • /
    • 1996
  • In the paper, we have obtained electron energy distribution function (EEDF) in plasma by using two differentiators. In addition, we have investigated the comparision of the EEDFs by sawtooth and triangle waveform voltages. It is found that as pressure is decreased, electron density is decreased, and plasma potential is increased. And as the position of probe moves the outer of plasma, plasma potential is decreased, and electron temperature is decreased.

  • PDF

Nano-mechanics 분석을 기반으로 Sol-gel PZT 박막의 Plasma에 의한 물리적 특성 변화 연구

  • 김수인;김성준;권구은;김현석;엄은상;박준성;이정현;이창우
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
    • /
    • pp.216.1-216.1
    • /
    • 2013
  • PZT 박막은 강유전 특성과 압전소자 특성을 나타내는 물질로 DRAM (dynamic random acess memory)과 FRAM (ferroelectric RAM) 등의 기억소자용 capacitor와 MEMS (micro electro mechanical system) 소자의 압전 물질로 사용하기 위한 연구가 진행중에 있다. 하지만 이러한 연구에서는 PZT 박막의 전기적 특성 향상을 주목적으로 연구가 진행되어 왔다. 특히, 박막 공정중 발생하는 plasma에 의한 PZT의 전기적 특성 변화가 박막 표면의 물리적 변화에 기인할 것으로 추정하고 있지만 이에 대한 구체적인 연구는 미비하다. 이 연구에서는 plasma에 의한 PZT 박막 표면의 물리적 특성 변화를 연구하기 위하여 PZT 박막을 sol-gel을 이용하여 Si 기판위에 약 100 nm의 두께로 증착하였으며, 이후 최대 300 W의 Ar plasma로 plasma power을 증가시켜 각각 10분간 plasma처리를 실시하였다. PZT 박막 표면의 nano-mechanics 특성을 분석하기 위하여 Nano-indenter와 Kelvin Probe Force Microscopy (KPFM)을 사용하여 surface hardness, surface morphology를 확인하였고 특히, surface potential 분석을 통하여 PZT 박막 표면의 plasma에 의한 박막 극 표면의 전기적 특성 변화를 연구하였다. 이 연구로 plasma에 의한 PZT 박막은 표면으로부터 최대 43 nm 깊이에서의 hardness는 최대 5.1 GPa에서 최소 4.3 GPa의 분포로 plasma power 변화에 의한 특성은 측정 불가능하였다. 이는 plasma에 의한 영향이 시료 극 표면에 국한되어 나타나기 때문으로 추정되며 이를 보완하기 위하여 surface potential을 분석하였다. 결과에 의하면 plasma power가 0 W에서 300 W로 증가함에 따라 potential이 30 mV에서 -20 mV로 감소하였으나 potential의 분산은 100 W에서 최대인 17 mV로 측정되었으며, 이때 RMS roughness역시 가장 높은 20.145 nm로 측정되었다. 특히, 100 W에서 potential에서는 물결 모양과 같은 일정한 패턴의 potential 무늬가 확인되었다.

  • PDF

Science Objectives and Design of Ionospheric Monitoring Instrument Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) for the CAS500-3 Satellite

  • Ryu, Kwangsun;Lee, Seunguk;Woo, Chang Ho;Lee, Junchan;Jang, Eunjin;Hwang, Jaemin;Kim, Jin-Kyu;Cha, Wonho;Kim, Dong-guk;Koo, BonJu;Park, SeongOg;Choi, Dooyoung;Choi, Cheong Rim
    • Journal of Astronomy and Space Sciences
    • /
    • 제39권3호
    • /
    • pp.117-126
    • /
    • 2022
  • The Ionospheric Anomaly Monitoring by Magnetometer And Plasma-probe (IAMMAP) is one of the scientific instruments for the Compact Advanced Satellite 500-3 (CAS 500-3) which is planned to be launched by Korean Space Launch Vehicle in 2024. The main scientific objective of IAMMAP is to understand the complicated correlation between the equatorial electro-jet (EEJ) and the equatorial ionization anomaly (EIA) which play important roles in the dynamics of the ionospheric plasma in the dayside equator region. IAMMAP consists of an impedance probe (IP) for precise plasma measurement and magnetometers for EEJ current estimation. The designated sun-synchronous orbit along the quasi-meridional plane makes the instrument suitable for studying the EIA and EEJ. The newly-devised IP is expected to obtain the electron density of the ionosphere with unprecedented precision by measuring the upper-hybrid frequency (fUHR) of the ionospheric plasma, which is not affected by the satellite geometry, the spacecraft potential, or contamination unlike conventional Langmuir probes. A set of temperature-tolerant precision fluxgate magnetometers, called Adaptive In-phase MAGnetometer, is employed also for studying the complicated current system in the ionosphere and magnetosphere, which is particularly related with the EEJ caused by the potential difference along the zonal direction.

KSUPRAMAX-O 선형의 규칙파 중 상대파고 계측에 대한 연구 (A Study on Relative Wave Elevation Measurement of KSUPRAMAX-O in Regular Waves)

  • 박동민;권용주;김건우;남현승;황승현
    • 대한조선학회논문집
    • /
    • 제60권5호
    • /
    • pp.305-319
    • /
    • 2023
  • This study focuses on measuring the relative wave elevation around the KSUPRAMAX-O ship and comparing it with numerical analysis results (potential and computational fluid dynamics). The relative wave elevation is a good indicator of the pressure distribution on the ship's surface, which is affected by the ship's motion, incident waves, and distributed waves. Prior to measuring the relative wave elevation, a comparative test was conducted on resistance type, capacitance type, and ultrasonic type wave probe to measure the relative wave elevation, and it was confirmed that the resistance type wave probe was suitable for measuring the relative wave elevation. A model test was performed at low speed and design speed using resistance type wave probe and compared with the results of numerical analysis result. As for the motion response, it was confirmed that the result of experiments and the result of the numerical analysis were in good agreement. The relative wave elevation showed a similar trend between the experiment and the computational fluid dynamics, but the potential analysis result showed a difference from the experiment in design speed.

원자힘현미경을 이용한 탄화규소 미세 패터닝의 Scanning Kelvin Probe Microscopy 분석 (Scanning Kelvin Probe Microscope analysis of Nano-scale Patterning formed by Atomic Force Microscopy in Silicon Carbide)

  • 조영득;방욱;김상철;김남균;구상모
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2009년도 추계학술대회 논문집
    • /
    • pp.32-32
    • /
    • 2009
  • Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

  • PDF

생체조직내 레이저 광 밀도 향상을 위한 압력 인가형 저출력 레이저 프로브 (A Pressure Applied Low-Level Laser Probe to Enhance Laser Photon Density in Soft Tissue)

  • 여창민;박정환;손태윤;이용흠;정병조
    • 대한의용생체공학회:의공학회지
    • /
    • 제30권1호
    • /
    • pp.18-22
    • /
    • 2009
  • Laser has been widely used in various fields of medicine. Recently, noninvasive low-level laser therapeutic medical devices have been introduced in market. However, low-level laser cannot deliver enough photon density to expect positive therapeutic results in deep tissue layer due to the light scattering property in tissue. In order to overcome the limitation, this study was aimed to develop a negative pressure applied low-level laser probe to optimize laser transmission pattern and therefore, to improve photon density in soft tissue. In order to evaluate the possibility of clinical application of the developed laser probe, ex-vivo experiments were performed with porcine skin samples and laser transmissions were quantitatively measured as a function of tissue compression. The laser probe has an air suction hole to apply negative pressure to skin, a transparent plastic body to observe variations of tissue, and a small metallic optical fiber guide to support the optical fiber when negative pressure was applied. By applying negative pressure to the laser probe, the porcine skin under the metallic optical fiber guide is compressed down and, at the same time, low-level laser is emitted into the skin. Finally, the diffusion images of laser in the sample were acquired by a CCD camera and analyzed. Compared to the peak intensity without the compression, the peak intensity of laser increased about $2{\sim}2.5$ times and FWHM decreased about $1.67{\sim}2.85$ times. In addition, the laser peak intensity was positively and linearly increased as a function of compression. In conclusion, we verified that the developed low-level laser probe can control the photon density in tissue by applying compression, and therefore, its potential for clinical applications.

Mapping of Work Function in Self-Assembled V2O5 Nanonet Structures

  • Park, Jeong Woo;Kim, Taekyeong
    • 대한화학회지
    • /
    • 제61권1호
    • /
    • pp.12-15
    • /
    • 2017
  • We presented a mapping the work function of the vanadium pentoxide ($V_2O_5$) nanonet structures by scanning Kelvin probe microscopy (SKPM). In this measurement, the $V_2O_5$ nanonet was self-assembled via dropping the solution of $V_2O_5$ nanowires (NWs) onto the $SiO_2$ substrate and drying the solvent, resulting in the networks of $V_2O_5$ NWs. We found that the SKPM signal as a surface potential of $V_2O_5$ nanonet is attributed to the contact potential difference (CPD) between the work functions of the metal tip and the $V_2O_5$ nanonet. We generated the histograms of the CPD signals obtained from the SKPM mapping of the $V_2O_5$ nanonet as well as the highly ordered pyrolytic graphite (HOPG) which is used as a reference for the calibration of the SKPM tip. By using the histogram peaks of the CPD signals, we successfully estimated the work function of ~5.1 eV for the $V_2O_5$ nanonet structures. This work provides a possibility of a nanometer-scale imaging of the work function of the various nanostructures and helps to understand the electrical characteristics of the future electronic devices.

Write Characteristics of Silicon Resistive Probe

  • Jung, Young-Ho;Kim, Jun-Soo;Shin, Hyung-Cheol
    • 대한전자공학회:학술대회논문집
    • /
    • 대한전자공학회 2005년도 추계종합학술대회
    • /
    • pp.821-824
    • /
    • 2005
  • Probe storage is one of the strong candidates for future mobile storage device since it has potential of recording density over I $Tb/in^2$ with r/w speed over 100 Mbps. It also uses silicon-processing technology that suits the purpose of small form factor. In this paper, write characteristics of resistive probe that can rotate the field direction of PZT by field-induced resistance changes in a small resistive region at the apex of the tip will be presented. Also, the relationship between the size of tip and the available write width is investigated for different source bias conditions. For this study, two-dimensional computer simulation ($SILVACO^{TM}$) was performed. With optimum design, the width of the writing electric field can be smaller than 50nm

  • PDF

Plasma Uniformity Analysis of Inductively Coupled Plasma Assisted Magnetron Sputtering by a 2D Voltage Probe Array

  • Joo, Junghoon
    • Applied Science and Convergence Technology
    • /
    • 제23권4호
    • /
    • pp.161-168
    • /
    • 2014
  • A real-time monitoring of immersed antenna type inductively coupled plasma (ICP) was done with a homemade 2 dimensional voltage probe array to check the uniformity of the plasma. Measured voltage values with a high impedance voltmeter are close to the floating potential of the plasma. As the substrate carrier was moving into a magnetron sputtering plasma diffusive from a $125mm{\times}625mm$ size cathode, measured results showed reliably separation of plasma into the upper and lower empty space over the carrier. Infra red thermal imaging camera was used to observe the cross corner effect in situ without eroding a target to the end of the usage. 3 dimensional particle trace model was used to analyze the magnetron discharge's behavior.

Teaching a Known Molecule New Tricks: Optical Cyanide Recognition by 2-[(9-Ethyl-9H-carbazol-3-yl)methylene]propanedinitrile in Aqueous Solution

  • Tang, Lijun;Zhao, Guoyou;Wang, Nannan
    • Bulletin of the Korean Chemical Society
    • /
    • 제33권11호
    • /
    • pp.3696-3700
    • /
    • 2012
  • The colorimetric and fluorescent cyanide recognition properties of 2-[(9-ethyl-9H-carbazol-3-yl)methylene]-propanedinitrile (1) in $CH_3CN-H_2O$ (2/1, v/v, HEPES 10 mM, pH = 7.0) solution were evaluated. The optical recognition process of probe 1 exhibited high sensitivity and selectivity to cyanide ion with the detection limit of $2.04{\times}10^{-6}$ M and barely interfered by other coexisting anions. The sensing mechanism of probe 1 is speculated to undergo a nucleophilic addition of cyanide to dicyanovinyl group present in compound 1. The colorimetric and fluorescent dual-modal response to cyanide makes probe 1 has a potential utility in cyanide detection.