• 제목/요약/키워드: Potential Field

검색결과 3,795건 처리시간 0.028초

다채널 청각 사건관련전위 P300 결정에서 전부위장력측정법과 전통적방법의 비교 (Comparison of Global Field Power Measurement and Conventional Method in Multi-channel Auditory Event Related Potential P300 Determination)

  • 전양환;한상익
    • 생물정신의학
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    • 제7권2호
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    • pp.180-185
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    • 2000
  • Objective : The present study was designed to compare Global Field Power Measurement and conventional method in P300 determination. Method : The subjects were composed of patients(N=20) with schizophrenia by DSM-IV and normal controls(N=20). The auditory event related potential P300 was measured by "oddball paradigm". P300 components were determined by Global Field Power Measurement and conventional method at 5 electrodes(Fz, Cz, Pz, $T_3$, $T_4$). Results : P300 amplitudes of patients were smaller than those of controls across all electrodes and in both methods, but there was no differential power in P300 determination between two methods. Asymmetry of auditory event-related potential P300 was not shown between patients with schizophrenia and normal controls. Conclusion : It is implicated that it depends on clinical situations and research purposes what method of P300 determination will be more appropriate for patients with schizophernia.

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Compact Current Model of Single-Gate/Double-Gate Tunneling Field-Effect Transistors

  • Yu, Yun Seop;Najam, Faraz
    • Journal of Electrical Engineering and Technology
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    • 제12권5호
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    • pp.2014-2020
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    • 2017
  • A compact current model applicable to both single-gate (SG) and double-gate (DG) tunneling field-effect transistors (TFETs) is presented. The model is based on Kane's band-to-band tunneling (BTBT) model. In this model, the well-known and previously-reported quasi-2-D solution of Poisson's equation is used for the surface potential and length of the tunneling path in the tunneling region. An analytical tunneling current expression is derived from expressions of derivatives of local electric field and surface potential with respect to tunneling direction. The previously reported correction factor with three fitting parameters, compensating for superlinear onset and saturation current with drain voltage, is used. Simulation results of the proposed TFET model are compared with those from a technology computer-aided-design (TCAD) simulator, and good agreement in all operational bias is demonstrated. The proposed SG/DG-TFET model is developed with Verilog-A for circuit simulation. A TFET inverter is simulated with the Verilog-A SG/DG-TFET model in the circuit simulator; the model exhibits typical inverter characteristics, thereby confirming its effectiveness.

등각사상방법을 이용한 도체로 보강된 결합 도파 선로의 정전기장과 전위 분포 해석 (Analysis of Electrostatic Field and Potential Distributions in Conductor-Backed Coupled Coplanar Waveguide Using Conformal Mapping Method)

  • 유태훈;한기수
    • 조명전기설비학회논문지
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    • 제24권6호
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    • pp.35-42
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    • 2010
  • 본 논문에서는 등각사상 방법(conformal mapping method)을 사용하여 도체로 보강된 결합 도파 선로(conductor-backed coupled coplanar waveguide)의 정전기장 분포와 전위 분포를 계산하는 해석적인 수식을 유도하였다. 그리고 유도한 수식을 사용하여 결합 도파 선로 구조 전체에 분포하는 정전기장과 전위분포를 계산하고 이를 분석하였다. 논문에서 사용한 방법은 반복계산 과정을 필요로 하지 않으므로 이를 사용하면 전파해석방법(full-wave analysis method)보다 전기장분포를 빠르고 간편하게 계산할 수 있다. 이 방법은 결합기, 필터, 마이크로스트립 안테나와 같은 결합선로를 사용한 마이크로파집적회로의 분석에 폭넓게 응용될 수 있다.

Evaluating seismic liquefaction potential using multivariate adaptive regression splines and logistic regression

  • Zhang, Wengang;Goh, Anthony T.C.
    • Geomechanics and Engineering
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    • 제10권3호
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    • pp.269-284
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    • 2016
  • Simplified techniques based on in situ testing methods are commonly used to assess seismic liquefaction potential. Many of these simplified methods were developed by analyzing liquefaction case histories from which the liquefaction boundary (limit state) separating two categories (the occurrence or non-occurrence of liquefaction) is determined. As the liquefaction classification problem is highly nonlinear in nature, it is difficult to develop a comprehensive model using conventional modeling techniques that take into consideration all the independent variables, such as the seismic and soil properties. In this study, a modification of the Multivariate Adaptive Regression Splines (MARS) approach based on Logistic Regression (LR) LR_MARS is used to evaluate seismic liquefaction potential based on actual field records. Three different LR_MARS models were used to analyze three different field liquefaction databases and the results are compared with the neural network approaches. The developed spline functions and the limit state functions obtained reveal that the LR_MARS models can capture and describe the intrinsic, complex relationship between seismic parameters, soil parameters, and the liquefaction potential without having to make any assumptions about the underlying relationship between the various variables. Considering its computational efficiency, simplicity of interpretation, predictive accuracy, its data-driven and adaptive nature and its ability to map the interaction between variables, the use of LR_MARS model in assessing seismic liquefaction potential is promising.

The Stress Field in a Body Caused by the Tangential Force of a Rectangular Patch on a Semi-Infinite Solid

  • Cho, Yong-Joo;Kim, Tae-Wan;Lee, Mun-Ju
    • KSTLE International Journal
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    • 제2권1호
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    • pp.29-34
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    • 2001
  • The stress field in a body caused by the tangential loading of a rectangular patch on a semi-infinite solid has been solved analytically using a potential function. The validity of the results of this study was preyed by Saint-Venant's principle in the remote region and by the superposition of point loads in the vicinity of the surface.

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Dual Gate L-Shaped Field-Effect-Transistor for Steep Subthreshold Slope

  • Najam, Faraz;Yu, Yun Seop
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2018년도 춘계학술대회
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    • pp.171-172
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    • 2018
  • Dual gate L-shaped tunnel field-effect-transistor (DG-LTFET) is presented in this study. DG-LTFET achieves near vertical subthreshold slope (SS) and its ON current is also found to be higher then both conventional TFET and LTFET. This device could serve as a potential replacement for conventional complimentary metal-oxide-semiconductor (CMOS) technology.

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Compact Model of Tunnel Field-Effect-Transistors

  • Najam, Faraz;Yu, Yun Seop
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2016년도 춘계학술대회
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    • pp.160-162
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    • 2016
  • A compact model of tunnel field effect transistor (TFET) has been developed. The model includes a surface potentia calculation module and a band-to-band-tunneling current module. Model comparison with TCAD shows that the mode calculates TFET surface potential and drain current accurately.

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무게중심 보로노이 테셀레이션을 이용한 군집로봇의 협조탐색 (The Cooperate Navigation for Swarm Robot Using Centroidal Voronoi Tessellation)

  • 방문섭;주영훈
    • 전기학회논문지
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    • 제61권1호
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    • pp.130-134
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    • 2012
  • In this paper, we propose a space partitioning technique for swarm robots by using the Centroidal Voronoi Tessellation. The proposed method consists of two parts such as space partition and collision avoidance. The space partition for searching a given space is carried out by a density function which is generated by some accidents. The collision avoidance is implemented by the potential field method. Finally, the numerical experiments show the effectiveness and feasibility of the proposed method.

The magnetic properties of optical Quantum transitions of electron-piezoelectric potential interacting systems in CdS and ZnO

  • Lee, Su Ho
    • 전기전자학회논문지
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    • 제22권1호
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    • pp.61-67
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    • 2018
  • We investigated theoretically the magnetic field dependence of the quantum optical transition of qusi 2-Dimensional Landau splitting system, in CdS and ZnO. In this study, we investigate electron confinement by square well confinement potential in magnetic field system using quantum transport theory(QTR). In this study, theoretical formulas for numerical analysis are derived using Liouville equation method and Equilibrium Average Projection Scheme (EAPS). In this study, the absorption power, P (B), and the Quantum Transition Line Widths (QTLWS) of the magnetic field in CdS and ZnO can be deduced from the numerical analysis of the theoretical equations, and the optical quantum transition line shape (QTLS) is found to increase. We also found that QTLW, ${\gamma}(B)_{total}$ of CdS < ${\gamma}(B)_{total}$ of ZnO in the magnetic field region B<25 Tesla.

Electrical Characteristics of (BaSr)TiO3-based PTCR Devices under the Electric Field

  • Lee, Joon-Hyung;Cho, Sang-Hee
    • 한국세라믹학회지
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    • 제39권1호
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    • pp.16-20
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    • 2002
  • Semiconducting (Ba.Sr)TiO$_3$ceramic device, which shows the PTCR effect, has been usually used as a current limiter. In this case, the device should endure the condition under the high electric field. In this study, the dynamic electrical properties of the PTCR device under high voltage has been evaluated. Two different formulated powders were used and the sintered bodies exhibited the different grain size and porosity. The wide range of characterization such as complex impedance spectroscopy, microstructure, I-V characteristics and voltage dependence of resistivity of the samples were performed. The PTCR effect of the specimen containing coarse grains was very sensitively dependent on the AC electric field, showing that it was inversely pro-portional to the grain boundary potential barrier. The withstanding voltage was proportional to the potential barrier of grain boundary.