Proceedings of the Korean Institute of Information and Commucation Sciences Conference (한국정보통신학회:학술대회논문집)
- 2018.05a
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- Pages.171-172
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- 2018
Dual Gate L-Shaped Field-Effect-Transistor for Steep Subthreshold Slope
- Najam, Faraz (Hankyong National University) ;
- Yu, Yun Seop (Hankyong National University)
- Published : 2018.05.31
Abstract
Dual gate L-shaped tunnel field-effect-transistor (DG-LTFET) is presented in this study. DG-LTFET achieves near vertical subthreshold slope (SS) and its ON current is also found to be higher then both conventional TFET and LTFET. This device could serve as a potential replacement for conventional complimentary metal-oxide-semiconductor (CMOS) technology.