• Korean Journal of Materials Research
• /
• v.16 no.12
• /
• pp.766-770
• /
• 2006

The frictional behavior of oxide films on top of the plasma nitrocarburized compound layers was investigated in terms of post-oxidation treatment temperatures. The post-oxidation treatment at both temperatures($400^{\circ}C,\;500^{\circ}C$) produced magnetite($Fe_3O_4$) films which led to a significant enhancement in corrosion resistance. However, this process did not result in any improvement in frictional behavior of the nitrocarburized surface. The wear mechanisms were governed predominantly by the abrasive action of the slider on the surface irrespective of the counterface material(SiC and Bearing steel). When the specimen was sliding against a SiC counterface, the oxide films were destroyed during the early stage of the sliding process and the wear debris of the oxide film at the sliding track had a great influence on the friction coefficient. On the other hand, when sliding against a bearing steel counterface, the slider was mainly worn out due to the much higher hardness of the surface hardened layer. The fluctuation of the friction coefficient of $400^{\circ}C$-oxidized/ nitrocarburized specimen is much severer than that of $500^{\circ}C$ specimen, due to the less amount of wear debris.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.3
• /
• pp.181-185
• /
• 2003

Influence of post gate oxidation anneal on Negative Bias Temperature Instability (NBTI) of PMOSFE has been investigated. At oxidation anneal temperature raised above 950$^{\circ}$C, a significant improvement of NBTI was observed which enables to reduce PMO V$\_$th/ shift occurred during a Bias Temperature (BT) stress. The high temperature anneal appears to suppress charge generations inside the gate oxide and near the silicon oxide interface during the BT stress. By measuring band-to-band tunneling currents and subthreshold slopes, reduction of oxide trapped charges and interface states at the high temperature oxidation anneal was confirmed.

• Journal of the Korean Society for Heat Treatment
• /
• v.14 no.2
• /
• pp.103-109
• /
• 2001

Plasma nitrocarburising and post oxidation were performed on SM45C steel using a plasma nitriding unit. Nitrocarburising was carried out with various methane gas compositions with 4 torr gas pressure at $570^{\circ}C$ for 3 hours and post oxidation was carried out with 100% oxygen gas atmosphere with 4 torr at different temperatures for various times. It was found that the compound layer produced by plasma nitrocarburising consisted of predominantly ${\varepsilon}-Fe_{2-3}(N,C)$ and a small proportion of ${\gamma}-Fe_4(N,C)$. With increasing methane content in the gas mixture, ${\varepsilon}$ phase compound layer was favoured. In addition, when the methane content was further increased, cementite was observed in the compound layer. The very thin oxide layer on top of the compound layer was obtained by post oxidation. The formation of Oxide phase was initially started from the magnetite($Fe_3O_4$) and with increasing oxidation time, the oxide phase was increased. With increasing oxidation temperature, oxide phase was increased. However the oxide layer was split from the compound layer at high temperature. Corrosion resistance was slightly influenced by oxidation times and temperatures.

• Transactions on Electrical and Electronic Materials
• /
• v.3 no.4
• /
• pp.27-31
• /
• 2002

Thin film diode with reliable interfacial structure was fabricated by using multi-step anodic oxidation. The thickness of the oxide layer was preciously controlled with anodic voltage. Also, interfacial structure between oxide layer and top electrode was improved by applying post heat-treatment. The thin film diode showed symmetric and stable I-V characteristics after the post heat-treatment.

• Journal of the Korean institute of surface engineering
• /
• v.40 no.6
• /
• pp.250-253
• /
• 2007

Plasma nitrocarburizing and plasma oxidizing treatments were performed to improve the wear and corrosion resistance of SKD 11 steel. Plasma nitrocarburizing was conducted for 12 h at $520^{\circ}C$ in the nitrogen, hydrogen and methane atmosphere to produce the $\varepsilon-Fe_{2-3}(N,C)$ phase. It was found that the compound layer produced by plasma nitrocarburising was predominantly composed of $\varepsilon-phase$, with a small proportion of $\gamma'-Fe_4(N,C)$ phase. The thickness of the compound layer was about $5{\mu}m$ and the diffusion layer was about $150{\mu}m$ in thickness, respectively. Plasma post oxidation was performed on the nitrocarburized samples with various oxygen/hydrogen ratio at constant temperature of $500^{\circ}C$ for 1 hour. The very thin magnetite($Fe_3O_4$) layer $1-2{\mu}m$ in thickness on top of the compound layer was obtained by plasma post oxidation. It was confirmed that the corrosion characteristics of the nitrocarburized compound layer could be further improved by the application of the superficial magnetite layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.354-357
• /
• 2002

Thermally grown gate oxide on 4H-SiC wafer was investigated. The oxide layers were grown at l150$^{\circ}C$ varying the carrier gas and post activation annealing conditions. Capacitance-Voltage(C-V) characteristic curves were obtained and compared using various gate electrode such as Al, Ni and poly-Si. The interface trap density can be reduced by using post oxidation annealing process in Ar atmosphere. All of the samples which were not performed a post oxidation annealing process show negative oxide effective charge. The negative oxide effective charges may come from oxygen radical. After the post oxidation annealing, the oxygen radicals fixed and the effective oxide charge become positive. The effective oxide charge is negative even in the annealed sample when we use poly silicon gate. Poly silicon layer was dope by POCl$_3$ process. The oxide layer may be affected by P ions in poly silicon layer due to the high temperature of the POCl$_3$ doping process.

• Korean Journal of Exercise Nutrition
• /
• v.14 no.2
• /
• pp.87-93
• /
• 2010

PURPOSE. The purpose of this study was to investigate the effect of red-pepper ingestion on excess post-exercise oxygen consumption in young women. METHODS. The six female college students involved in this experiment. The subjects participated in two trials, standard meal (650 kcal) and standard meal +10 g red-pepper with 200 ml water. After the subjects allowed to have rest for 60 min, exercised by resistance program for 40 minutes. RESULTS. The excess post-exercise oxygen consumption (EPOC) was not affected by the red-pepper ingestion. However, post-exercise fat oxidation and plasma free fatty acid levels were higher in red-pepper trial than in control trial. CONCLUSION. Therefore, red-pepper ingestion before resistance exercise might be improve body fat reduction.

• Bulletin of the Korean Chemical Society
• /
• v.33 no.11
• /
• pp.3544-3550
• /
• 2012

Cetrizine dihydrochloride (CTZH) is widely used as an anti-allergic drug. Sodium N-bromo-p-toluenesulfonamide or bromamine-T (BAT) is the bromine analogue of chloramine-T (CAT) and is found to be a better oxidizing agent than CAT. In the present research, the kinetics of oxidation of CTZH with BAT in acid and alkaline media was studied at 313 K. The experimental rate laws obtained are: -d[BAT]/dt=$k[BAT][CTZH]^{0.80}[H^+]^{-0.48}$ in acid medium and -d[BAT]/dt=$k[BAT][CTZH]^{0.48}[OH^-]^{0.52}[PTS]^{-0.40}$ in alkaline medium where PTS is p-toluenesulfonamide. Activation parameters and reaction constants were evaluated. The solvent isotope effect was studied using $D_2O$. The dielectric effect is positive. The stoichiometry of the reaction was found to be 1:1 and the oxidation products were identified as 4-chlorobenzophenone and (2-piperazin-1-yl-ethoxy)-acetic acid in both media. The rate of oxidation of CTZH is faster in acid medium. Suitable mechanisms and related rate laws have been worked out.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.6
• /
• pp.766-772
• /
• 1996

Undoped $SnO_x$ thin films were deposited on Si(100) substrate by using reactive ioassisted deposition technique (R-IAD). In order to investigate the effect of initial oxygen content and heat treatment on the oxidation state and crystalline structure of tin oxide films, $SnO_x$ thin films were post-annealed at 400~$600^{\circ}C$ for 1 hr. in a vacuum ~$5 \times 10^{-3}$ -3/ Torr or were directly deposited on the substrate of $400^{\circ}C$ and the relative arrival ration ($Gamma$) of oxygen ion to Sn metal varied from 0.025 to 0.1, i.e., average impinging energy ($E_a$) form 25 to 100 eV/atom. As $E_a$ increased, the composition ratio of $N_ON{sn}$ changed from 1.25 to 1.93 in post-annealing, treatment and 1.21 to 1.87 in in-situ substrate heating. In case of post-annealing, the oxidation from SnO to $SnO_2$ was closely related to initial oxygen contents and post-annealing temperature, and the perfect oxidation of $SnO_2$ in the film was obtained at higher than $E_a$=75 eV/atom and $600^{\circ}C$. The temperature for perfect oxidation of $SnO_2$ was reduced as low as $400^{\circ}C$ through in-situ substrate heating. The variation of the chemical state of $SnO_x$ thin films with changing $E_a$'s and heating method were also observed by Auger electron spectroscopy.

• Korean Journal of Community Nutrition
• /
• v.17 no.2
• /
• pp.215-225
• /
• 2012

The purpose of this study was to measure and investigate the acute effects of two fatty meals (high-SFA & high-PUFA) on post-prandial thermic effect, substrate oxidation, and satiety. Eight healthy adults (four males and four females) aged 19-22 years were assigned to consume two isocaloric meals: high in saturated fatty acids from butter and high in polyunsaturated fatty acids from sesame oil. Indirect calorimetry was used to measure resting energy expenditure (REE), post-prandial energy expenditure for five hours, and substrate oxidation. Satiety of the subjects after meals was estimated by using visual analogue scales (VAS). Five hours thermic effect of food (TEF) was not significantly different between butter meal (6.5% of energy intake) and sesame oil meal (7.3% of energy intake), but, the TEF of butter meal reached the peak point at 150 min and decreased more rapidly arriving to REE in 270 min. On the other hand, TEF of sesame oil meal reached the peak at 90 min and decreased slower than butter meal (still higher than REE at 300 min). No significant differences in substrate oxidation rates were found between the two meals. Post-prandial fat oxidation rates increased significantly after the consumption of both butter and sesame oil meal than that of the pre-prandial state. Satiety values (hunger, fullness, and appetite) were similar among the meals, but recovery of hunger and fullness to the pre-prandial state was faster in butter meal than that of the sesame oil meal.