• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.44 no.4
• /
• pp.483-489
• /
• 1995

To investigate the mechanism generated by irradiation in the insulator layer irradiated MIS (Metal - Insulator - Semiconductor) device, the various types of MIS capacitors depending on insulator thickness, insulator types and implanted impurities are fabricated on the P-type wafer. MIS capacitors exposed by 1Mrad Co$^{60}$ .gamma.-ray are measured for flat band voltage and charge density shifts pre- and post-irradiation. The measuring results of post-irradiation show the flat band voltage shifting toward negative direction and charge density increasing regardless of parameters. This results have a good agreement with calculated data by computer simulation. Si$_{3}$N$_{4}$ layers have a good radiation-hardness than SiO$_{2}$ layers compared to the results of post-irradiation. Also, radiation-induced negative trap is discovered in the implanted insulator layer. Using numerical analysis, four continuty equations (conduction-band electrons continuity equation, valence-band holes continuity equation, trapped electrons continuity equation, trapped holes continuity equation) are solved and charge distributions according to the distance and Si-Insulator interface states are investigated.

• Journal of Power Electronics
• /
• v.16 no.6
• /
• pp.2258-2271
• /
• 2016

In this paper, some crucial performance characteristics related to the operational reliability of the post-fault Pulse Width Modulated (PWM) rectifiers, such as line current harmonic distortion, Common Mode Voltage (CMV), and current stress on the capacitors, are fully investigated. The aforementioned performance characteristics of post-fault rectifiers are highly dependent on the utilized space vector modulation (SVM) schemes, which are also examined. Detailed analyses of the three most commonly used SVM schemes for post-fault PWM rectifiers are provided, revealing the major differences in terms of the zero vector synthesis approaches. To compare the performances of the three SVM schemes, the operating principles of a post-fault rectifier are presented with various SVM schemes. Using analytical and numerical methods in the time domain, the performances of the line current distortion, common mode voltage and capacitor current are evaluated and compared for each SVM scheme. The proposed analysis demonstrates that the zero vector synthesis approaches of the considered methods have significant impacts on the performance characteristics of rectifiers. In addition, the advantages and disadvantages of the proposed SVM schemes are discussed. The experimental results verify the effectiveness and validity of the proposed analysis.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.17 no.5
• /
• pp.775-782
• /
• 2022

In this paper, a novel small-diameter cylindrical post capacitor inserted into an evanescent-mode rectangular waveguide (EMRWG) is proposed for easier tuning. In order to feed the EMRWG, the proposed structure uses a single ridge rectangular waveguide with the same width and height as the waveguide at the input and output ends. The inserted post capacitor are made up a circular groove formed in the center of the lower part of the broad wall of the EMRWG, and a concentric cylindrical post inserted into the upper part. First, the equivalent circuit model for the proposed structure is presented. When the EMRWG and the single ridge waveguide are combined, the joint susceptance and the turns ratio of the ideal transformer are calculated by two simulations using HFSS (3d fullwave simulator, Ansoft Co.) respectively. The susceptance and resonance characteristics of the inserted post were analyzed by using the obtained parameters and the characteristics of the EMRWG. A 2-post filter with a center frequency of 4.5 GHz and a bandwidth of 170 MHz was designed using a WR-90 waveguide, and the simulation results by using the HFSS and CST, equivalent circuit model were in good agreement.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.11a
• /
• pp.139-140
• /
• 2006

PZT박막은 비휘발성 재료로 유전율이 높고 항전력이 작으면서 잔류 분극랑이 크기 때문에 적합한 특성을 가지고 FeRAM에 매력적인 물질이다. CMP(chemical mechanical polishing)는 기존의 회생막의 전면 식각 공정과는 달리 특정 부위의 제거 속도를 조절함으로써 평탄화 하는 기술로 wafer 전면을 회전하는 탄성 패드 사이에 액상의 Slurry를 투입하여 연마하는 기술이다. 본 논문에서는 CMP 공정으로 제조한 PZT박막 캐패시터에서 CMP 후처리공정(세척)의 유무 및 종류에 따라 피로특성에 대하여 연구하였다, PZT 박막의 캐패시터의 피로 특성을 연구한 결과 CMP 후처리공정 SC-l용액을 사용하여 세정공정을 하였을때 가장 향상된 PZT 캐패시터의 피로특성이 나타났다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.668-671
• /
• 2001

The Sr$\_$0.8/Si$\_$2.4/Ta$_2$O$\_$9/(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO$_2$/SiO$_2$/Si) using RF magnetron sputtering method. With increasing post-annealing temperature from 600[$^{\circ}C$] to 850[$^{\circ}C$], Bi-layered perovskite phase was crystallized above 650[$^{\circ}C$]. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}$C/$\textrm{cm}^2$], 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of 750[$^{\circ}C$] is 1.01${\times}$10$\^$-8/ A/$\textrm{cm}^2$ at 100[kV/cm]. The fatigue characteristics of SBT thin films did not change up to 10$\^$10/ switching cycles.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2000.04b
• /
• pp.80-83
• /
• 2000

The post-annealing treatments on rf magnetron sputtered PZT($Pb_{1.05}(Zr_{0.52},\;Ti_{0.48})O_3$) thin films($4000{\AA}$) have been investigated for a structure of PZT/Pt/Ti/Coming glass(1737). Crystallization properties of PZT films were strongly dependent on RTA(Rapid Thermal Annealing) annealing temperature and time. We were able to obtain a perovskite structure of PZT at $650^{\circ}C$ and 10min. P-E curves of Pd/PZT/Pt capacitor demonstrate typical hysteresis loops. The measured values of $P_r$, $E_c$ were $8.1[{\mu}C/cm^2]$, 95[kV/cm] respectively. Polarization value decrease about 25% after $10^9$ cycles.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.2
• /
• pp.69-75
• /
• 1999

The characteristics of $H_2$ gas detection have been investigated using the Pt-MIS capacitor composed of the LPCVD nitride on the oxide. The flat band voltage shift is measured as 0.1 V in 1,000 ppm $H_2$ gas ambient and to be independent of Pt catalyst thickness. It is found that the flatband voltage shift is proportional to the hydrogen concentrations. The response and recovery time of Pt-MIS capacitor are 5 mins and 25 mins respectively. The samples of 30nm thick Pt revealed much higher sensitivity than that of 150nm samples. The samples of 150nm Pt showed that the flatband voltage shift of the device is due to the formation of the dipole layer of the adsorbed hydrogen atoms at the Pt-insulator interface.

• Proceedings of the KIEE Conference
• /
• 2005.07c
• /
• pp.1829-1831
• /
• 2005

Ferroelectric $Bi_{3.25}Nd_{0.75}Ti_3O_{12}$(BNdT) thin films were proposed for capacitor of FeRAM. The BNdT thin films were grown on Pt/Ti $SiO_2/P-Si(100)$ substrates by the RF magnetron sputtering deposition. The dielectric properties of the BNdT were investigated by varying post-annealing temperatures. Increasing post-annealing temperature, the (117) peak was increased. An increase of rod type grains of BNdT films with increasing post-annealing temperature was observed by the Field Emission Scanning Electron Microscopy(FE-SEM). The dielectric constant and dielectric loss of the BNdT thin films with post-annealing temperature of $700^{\circ}C$ were 418 and 0.37, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.09a
• /
• pp.9-12
• /
• 2001

The $Sr_{0.8}Bi_{2.4}Ta_2O_9(SBT)$ thin films are deposited on Pt-coated electrode($Pt/TiO_2/SiO_2/Si$) using RF magnetron sputtering method. With increasing post-annealing temperature from $600[^{\circ}C]$ to $850[^{\circ}C]$, Bi-layered perovskite phase was crystallized above $650[^{\circ}C]$. The maximum remanent polarization and the coercive electric field is 11.60[${\mu}C/cm^{2}$] 48[kV/cm] respectively. The leakage current density of SBT capacitor at post-annealing temperature of $750[^{\circ}C]$ is $1.01{\times}10^{-8}A/cm^2$ at 100[kV/cm]

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.36D no.6
• /
• pp.44-51
• /
• 1999

The electrical conduction mechanism of high dielectric $(Ba,Sr)TiO_3$ (BST) thin film capacitor, which is the promising cell capacitor for high density DRAM, was investigated in low field region (<0.2MV/cm). It is known that the current in the low field region consists of dielectric relaxation current and leakage current. The current-time (I-t) measurement technique under the constant voltage was used for extracting successfully each current component. The conduction mechanism of the BST capacitor was deduced from the dependency of the current on the measurement temperature, strength of electric field, the polarity of applied electric field and post annealing process. From these results, it was suggested that the dielectric relaxation current and the leakage current are originated from the redistribution of internally trapped electron by hopping process and Pool-Frenkel conduction mechanism, respectively. It was also concluded that traps causing these two current components are due to oxygen vacancies within the BST film.