• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.77-78
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• 2006

We fabricated photonic crystals on GaAs and GaN substrates. After anodizing the aluminium thin film in electrochemical embient, the porous alumina was implemented to the mask for reactive ion beam etching process of GaAs wafer. And photonic crystals in GaN wafer were also fabricated using electron beam nano-lithography process. The coated PMMA thin film with 200 nm-thickness on GaN surface was patterned with triangular lattice and etched out the GaN surface by the inductively coupled plasma source. The fabricated GaAs and GaN photonic crystals provide the enhanced intensities of light emission for the wavelengths of 858 and 450 nm, respectively. We will present the detailed dimensions of photonic crystals from SEM and AFM measurements.

• 설비공학논문집
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• 제25권12호
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• pp.674-678
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• 2013

We present a non-invasive technique to the measure temperature distribution in nano-sized porous thin films by means of the two-color laser-induced fluorescence (2-LIF) of rhodamine B. The fluorescence induced by the green line of a mercury lamp with the makeup of optical filters was measured on two separate color bands. They can be selected for their strong difference in the temperature sensitivity of the fluorescence quantum yield. This technique allows for absolute temperature measurements by determining the relative intensities on two adequate spectral bands of the same dye. To measure temperature fields, Silica (SiO2) nanoporous structure with 1-um thickness was constructed on a cover glass, and fluorescent dye was absorbed into these porous thin films. The calibration curves of the fluorescence intensity versus temperature were measured in a temperature range of $10-60^{\circ}C$, and visualization and measurement of the temperature field were performed by taking the intensity distributions from the specimen for the temperature field.

• 한국재료학회지
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• 제18권10호
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• pp.529-534
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• 2008

The hydrogen gas sensing properties of a zinc oxide nanowire structure were studied. Porous zinc oxide nanowire structures were fabricated by oxidizing zinc deposited on a single-wall carbon nanotube (SWNT) template. This revealed a porous ZnO-SWNT composite due to the porosity in the SWNT film. The gas sensing properties were compared with those of zinc oxide thin films deposited on SiO2/Si substrates in sensitivity and operating temperature. The composite structure showed higher sensitivity and lower operating temperature than the zinc oxide film. It showed a response even at room temperature while the film structure did not.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1388-1390
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• 2007

This paper investigates how various concentrations of lithium ion influence on crystallization of MgO in thin films formed by spin coating and an the discharge characteristic in a flat fluorescent lamp structure. The XRD results indicate $Li^+$ ion enhances the growth of MgO crystal in a spin coated thin film. The discharge property with the $Li^+$ ion doped MgO films show the lithium ion in MgO film clearly reduce the initial discharge voltages of test devices. Interestingly, the test panels with various doped MgO film have somewhat higher static memory margin of than that of pure-MgO owing probably to the pore structure of spin coated MgO films. The CL spectra, which confirm that the doping creates defects energy levels in the band gap of MgO, show the $F^+$ center is the main defects in doped MgO films.

• 한국재료학회지
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• 제25권12호
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• pp.708-712
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• 2015

This study reports the effects of $H_2S$ gas concentration on the properties of $Cu_2ZnSnS_4(CZTS)$ thin films. Specifically, sulfurization process with low $H_2S$ concentrations of 0.05% and 0.1%, along with 5% $H_2S$ gas, was studied. CZTS films were directly synthesized on Mo/Si substrates by chemical bath deposition method using copper sulfate, zinc sulfate heptahydrate, tin chloride dihydrate, and sodium thiosulfate pentahydrate. Smooth CZTS films were grown on substrates at optimized chemical bath deposition condition. The CZTS films sulfurized at low $H_2S$ concentrations of 0.05 % and 0.1% showed very rough and porous film morphology, whereas the film sulfurized at 5% $H_2S$ yielded a very smooth and dense film morphology. The CZTS films were fully crystallized in kesterite crystal form when they were sulfurized at $500^{\circ}C$ for 1 h. The kesterite CZTS film showed a reasonably good room-temperature photoluminescence spectrum that peaked in a range of 1.4 eV to 1.5 eV, consistent with the optimal bandgap for CZTS solar cell applications.

• 한국표면공학회지
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• 제49권3호
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• pp.286-300
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• 2016

Pd-Ag alloy membranes have attracted a great deal of attention for their use in hydrogen purification and separation due to their high theoretical permeability, infinite selectivity and chemical compatibility with hydro-carbon containing gas streams. For commercial application, Pd-based membranes for hydrogen purification and separation need not only a high perm-selectivity but also a stable long-term durability. However, it has been difficult to fabricate thin, dense Pd-Ag alloy membranes on a porous stainless steel metal support with surface pores free and a stable diffusion barrier for preventing metallic diffusion from the porous stainless steel support. In this study, thin Pd-Ag alloy membranes were prepared by advanced Pd/Ag/Pd/Ag/Pd multi-layer sputter deposition on the modified porous stainless steel support using rough polishing/$ZrO_2$ powder filling and micro-polishing surface treatment, and following Ag up-filling heat treatment. Because the modified Pd-Ag alloy membranes using rough polishing/$ZrO_2$ powder filling method demonstrate high hydrogen permeability as well as diffusion barrier efficiency, it leads to the performance improvement in hydrogen perm-selectivity. Our membranes, therefore, are expected to be applicable to industrial fields for hydrogen purification and separation owing to enhanced functionality, durability and metal support/Pd alloy film integration.

• 대한설비공학회:학술대회논문집
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• 대한설비공학회 2009년도 하계학술발표대회 논문집
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• pp.645-649
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• 2009

Liquid desiccant cooling technology can supply cooling by using waste heat and solar heat which are hard to use effectively. For compact and efficient design of a dehumidifier, it is important to sustain sufficient heat and mass transfer surface area for water vapor diffusion from air to liquid desiccant on heat exchanger. In this study, the plate type heat exchanger is adopted which has extended surface, and hydrophilic coating and porous layer coating are adopted to enhance surface wettedness. PP(polypropylene) plate is coated by porous layer and PET(polyethylene terephthalate) non-woven fabric is coated by hydrophilic polymer. These coated surfaces have porous structure, so that falling liquid film spreads widely on the coated surface foaming thin liquid film by capillary force. The temperature of liquid desiccant increases during dehumidification process by latent heat absorption, which leads to loss of dehumidification capacity. Liquid desiccant is cooled by cooling water flowing in plate heat exchanger. On the plate side, the liquid desiccant can be cooled by internal cooling. However the liquid desiccant on extended surface should be moved and cooled at heat exchanger surface. Optimal mixing and distribution of liquid desiccant between extended surface and plate heat exchanger surface is essential design parameter. The experiment has been conducted to verify effective surface treatment and distribution characteristics by measuring wall side flow rate and visualization test. It is observed that hydrophilic and porous layer coating have excellent wettedness, and the distribution can be regulated by adopting holes on extended surface.

• 한국재료학회지
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• 제20권11호
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• pp.600-605
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• 2010

In order to meet the requirements of faster speed and higher packing density for devices in the field of semiconductor manufacturing, the development of Cu/Low k device material is explored for use in multi-layer interconnection. SiOC(-H) thin films containing alkylgroup are considered the most promising among all the other low k candidate materials for Cu interconnection, which materials are intended to replace conventional Al wiring. Their promising character is due to their thermal and mechanical properties, which are superior to those of organic materials such as porous $SiO_2$, SiOF, polyimides, and poly (arylene ether). SiOC(-H) thin films containing alkylgroup are generally prepared by PECVD method using trimethoxysilane as precursor. Nano voids in the film originating from the sterichindrance of alkylgroup lower the dielectric constant of the film. In this study, methyltriphenylsilane containing bulky substitute was prepared and characterized by using NMR, single-crystal X-ray, GC-MS, GPC, FT-IR and TGA analyses. Solid-state NMR is utilized to investigate the insoluble samples and the chemical shift of $^{29}Si$. X-ray single crystal results confirm that methyltriphenylsilane is composed of one Si molecule, three phenyl rings and one methyl molecule. When methyltriphenylsilane decomposes, it produces radicals such as phenyl, diphenyl, phenylsilane, diphenylsilane, triphenylsilane, etc. From the analytical data, methyltriphenylsilane was found to be very efficient as a CVD or PECVD precursor.

• 공업화학
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• 제8권4호
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• pp.589-594
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• 1997

화학증착법을 통하여 $650^{\circ}C$의 증착온도와 0.0126Torr의 산소분압인 증착조건에서 원료물질로 $\beta$-diketonates 킬레이트 화합물을 사용하여 Si(111) 및 $SrTiO_3(100)$ 기판에 $YBa_2Cu_3O_y$ 고온 초전도 박막을 제조하였다. $SrTiO_3(100)$기판에서 제조된 박막의 $T_{c,onset}$과 $T_{c.0}$는 각각 91K와 87K로 나타났다. 또한, Si(111)기판에서 제조된 박막의 $T_{c,onset}$은 91K였지만 $T_{c.0}$는 액체질소 비등점(77.3K)에서는 보이지 않았다. $SrTiO_3(100)$에 증착된 초전도 박막은 치밀하고 2차원적으로 배열된 미세구조를 갖고 있는 반면, Si(111)에 증착된 초전도 박막은 상대적으로 기공이 많으며 무질서한 미세구조를 형성하였다.

• 공업화학
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• 제24권4호
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• pp.438-442
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• 2013

본 연구에서는 무전해 도금법으로 니켈과 인을 탄소섬유 표면에 코팅한 후, 열처리시키는 과정에서 일어나는 변화를 다양한 분석방법을 이용하여 연구하였다. 전자현미경(Scanning Electron Microscopy, SEM)을 이용한 연구에서는, 코팅 후 추가적인 열처리를 하지 않은 경우 평평한 표면구조를 관찰하였으나, 열처리 온도가 $350^{\circ}C$에 이르면서 다공성구조가 생성됨을 알았다. 열처리 온도를 $50^{\circ}C$ 간격으로 증가시키면서 연구한 결과 $650^{\circ}C$까지는 열처리 온도가 증가할수록 기공의 크기는 증가하고, 개수는 감소하는 경향성이 관찰되었다. X-선 회절법(x-ray diffraction, XRD) 측정 결과, 코팅 후 추가 열처리가 없는 경우 금속성 Ni, Ni-P 화합물이 관찰되었으며, 열처리 온도가 증가함에 따라 NiO 봉우리는 세기가 증가하며, 금속성 Ni 봉우리의 세기는 감소하였다. X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS) 측정에서는 $650^{\circ}C$, $700^{\circ}C$의 열처리 후 인 산화물이 표면에서 검출됨을 확인하였는데, 이는 코팅된 니켈 필름의 내부에 존재하던 인 화합물이 열처리 온도가 증가함에 따라서 표면 밖으로 빠져 나오는 현상이 일어나는 결과로 해석할 수 있다. 이상의 분석 데이터를 토대로, 무전해 도금으로 코팅된 Ni-P 화합물($Ni_xP_y$)이 열처리 과정에서 산화되면서, 이때 생성된 인 화합물 기체가 승화하면서 필름에 기공을 생성시키는 것으로 제안할 수 있다. 다공성 물질은 넓은 비표면적 등의 우수한 물성때문에 불균일 촉매 등 다양한 분야에 적용될 수 있으며, 본 연구에서 소개하는 다공성 니켈 필름의 제작법은 대량 생산에 적용이 쉬워 환경 필터 분야 등의 다양한 곳에 응용될 수 있을 것으로 생각된다.