• 통합자연과학논문집
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• 제4권1호
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• pp.1-6
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• 2011

The properties of porous silicon, such as substrate properties, porosity, thickness, refractive index, surface area, and optical properties of porous silicon were reviewed. Some properties, such as porosity, refractive index, thickness, pore diameter, multi-structures, and optical properties, are strongly dependent on the anodization process parameters. These parameters include HF concentration, current density, anodization time, and silicon wafer type and resistivity.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2001년도 춘계학술대회논문집
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• pp.65-71
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• 2001

Absorbers such as porous materials and panels have limited absorption characteristics to some frequency bands. There is a need for absorbers with high absorption coefficients in a wide frequency ranges to make good response of room acoustics. This is almost impossible for a single absorption material. Composite absorption structure with cover, porous material. and air gap is known to have those wide frequency characteristics. In this basis. various composite absorption structures are measured and investigated as wide range absorption structures. Measurements are performed according to an international standard, ISO 354. Various surface types such as wooden slits, wood/steel perforated panels are selected as surface covers, and also various porous materials such as polyurethanes, polyesters, and glasswools are used inside the covers. Result shows that the area of void parts of surface materials is critical to high frequency absorptions, and thickness of air gaps are critical factor of the peak absorptions of low frequency bands.

• 한국표면공학회지
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• 제43권5호
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• pp.217-223
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• 2010

For an application as templates of high performance with proper pore size and shape, porous anodic alumina films were prepared by anodization in oxalic acid, and formation behaviors of anodic alumina layer as well as dissolution process in acid solution have been investigated. The surface characteristics on anodic alumina layer were shown to be dependent on the fabrication parameters for anodization. For the dissolution behaviors of anodic alumina, the thickness of the barrier-type alumina layer decreased linearly with the rate of 0.98 nm/min in $H_3PO_4$ solution at $30^{\circ}C$. The changes of the anodic alumina layers were analyzed by SEM and TEM.

• 한국표면공학회지
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• 제15권2호
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• pp.69-76
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• 1982

With a view to manufacturing membranes for separation of gas mixtures, Al foils were anodized in a 2% oxalic-acid electrolyte at 40V and 80V. When anodizing was completed and Barrier layer existed at the extreme back site of the foil, the anodized foil was made to react with only electrolyte, with switching off the electric power. When the size and density of pores were changed through voltage change, the membr-anes did not show large difference in the permeability. Reacting with electrolyte, the existing Barrier layer turns into porous layer. During this process, several small pores grow from one relatively large pore, getting to the back site. The number and size of the small pores getting to the back surface increase as time passing. This change of Barrier layer into porous layer is thought to be directly related to the permeability change of the membranes. The selectivity of an anodized Al membrane was not related to the voltage change, and was high, being similar to the theoretical selctivity of metallic membranes, according to my observation.

• 한국재료학회지
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• 제17권9호
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• pp.500-506
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• 2007

The effects of anisotropic surface energy on the microstructure development of porous materials have been studied through Monte Carlo simulation using a three dimensional lattice. The changes in porosity ($f_v$), mean grain diameter ($D_s$), fraction of connected pores ($f_{v,c}$) and contiguity of the solid phase (C) were examined in cases with three different ${\gamma}_{SV}$ relations and initial grain diameters ($D_{s,o}$). It has been found that larger ${\gamma}_{SV}$ enhances sintering of particles and increases C and does not change $D_s$. And Introducing anisotropic ${\gamma}_{SV}$ brought an increase in $f_v$ and $f_{v,c}$ and an decrease in $D_s$ and C, and this tendency become more marked for fine $D_{s,o}$.

• International Journal of Air-Conditioning and Refrigeration
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• 제14권2호
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• pp.66-75
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• 2006

The effect of antifreeze solution liquid film on the frost prevention is experimentally investigated. It is desirable that the antifreeze solution spreads widely on the heat exchanger surface forming thin liquid film to prevent frost nucleation while having small thermal resistance across the film. A porous layer coating technique is adopted to improve the wettability of the antifreeze solution on a parallel plate heat exchanger. The antifreeze solution spreads widely on the heat exchanger surface with $100{\mu}m$ thickness by the capillary force resulted from the porous structure. It is observed that the antifreeze solution liquid film prevents a parallel plate heat exchanger from frosting. The reductions of heat and mass transfer rate caused by the thin liquid film are only $1{\sim}2%$ compared with those for non-liquid film surface.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.606-607
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• 2006

A porous material with a surface layer was fabricated using glass abrasive sludge and expanding agents. The glass abrasive sludges were mixed with expanding agents and compacted into pellets. These pellets were sintered in the range of $700-900^{\circ}C$ for 20min. The sintered porous materials had a surface layer with smaller pores and inner parts with larger pores. The surface layer and pores controlled the absorption ratio and physical properties.

• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2474-2479
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• 2024

In-Vessel Retention (IVR) is a key technology to retain the molten core in the reactor vessel during severe accidents of Pressurized-water reactors (PWRs). In order to gain the safety margin of IVR, it is crucial to enhance the critical heat flux (CHF) of the reactor vessel, which is submerged in a water pool. To enhance the CHF, we have designed and additive-manufactured porous grid plates with a 3-D printer for design flexibility. We measured the CHF for the porous grid plate on the boiling heat transfer surface and found that the CHF was enhanced by 50 % more than that of the bare surface. The CHF enhanced more with a narrower grid pitch and a lower grid height. The visual observation study revealed that the vapor film was formed at the bottom of the grid plate.

• 한국분말재료학회지
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• 제22권1호
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• pp.15-20
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• 2015

The composite of porous silicon (Si) and amorphous carbon (C) is prepared by pyrolysis of a nano-porous Si + pitch mixture. The nano-porous Si is prepared by mechanical milling of magnesium powder with silicon monoxide (SiO) followed by removal of MgO with hydrochloric acid (etching process). The Brunauer-Emmett-Teller (BET) surface area of porous Si ($64.52m^2g^{-1}$) is much higher than that before etching Si/MgO ($4.28m^2g^{-1}$) which indicates pores are formed in Si after the etching process. Cycling stability is examined for the nano-porous Si + C composite and the result is compared with the composite of nonporous Si + C. The capacity retention of the former composite is 59.6% after 50 charge/discharge cycles while the latter shows only 28.0%. The pores of Si formed after the etching process is believed to accommodate large volumetric change of Si during charging and discharging process.

• Bulletin of the Korean Chemical Society
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• 제32권12호
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• pp.4392-4396
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• 2011

Porous silicon with a complex network of nanopores is utilized for photoelectrochemical energy conversion. A novel electroless Pt deposition onto porous silicon is investigated in the context of photoelectrochemical hydrogen generation. The electroless Pt deposition is shown to improve the characteristics of the PS photoelectrode toward photoelectrochemical $H^+$ reduction, though excessive Pt deposition leads to decrease of photocurrent. Furthermore, it is found that a thin layer (< 10 ${\mu}m$) of porous silicon can serve as anti-reflection layer for the underlying Si substrate, improving photocurrent by reducing photon reflection at the Si/liquid interface. However, as the thickness of the porous silicon increases, the surface recombination on the dramatically increased interface area of the porous silicon begins to dominate, diminishing the photocurrent.