• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• 한국재료학회지
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• 제21권5호
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.194-198
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• 2004

The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

• 통합자연과학논문집
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• 제3권4호
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• pp.202-205
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• 2010

Nanocrystalline porous silicon surfaces have been used to detect nitroaromatic compounds in vapor phase. The mode of photoluminescence is emphasized as a sensing attitude or detection technique. Quenching of photoluminescence from nanocrystalline porous surfaces as a transduction mode is measured upon the exposure of nitroaromatic compounds. Reversible detection mode for nitroaromatics is, too, observed. To verify the detection afore-mentioned, photoluminescent freshly prepared porous silicons are functionalized with different groups. The mechanism of quenching of photoluminescence is attributed to the electron transfer behaviors of quantum-sized nano-crystallites in the porous silicon matrix to the analytes(nitroaromatics). An attempt has been done to prove that the surface-derivatized photoluminescent porous silicone surfaces can act as versatile substrates for sensing behaviors due to having a large surface area and highly sensitive transduction mode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of Photoscience
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• 제12권3호
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• 한국세라믹학회지
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• 제45권10호
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• pp.584-588
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• 2008

Porous hydroxyapatite(HA) and HA-coated porous $Al_2O_3$ possessing pore characteristics required for bone substitutes were prepared by a slurry foaming method combined with gelcasting. The HA coating was deposited by heating porous $Al_2O_3$ substrates in an aqueous solution containing $Ca^{2+}$ and ${PO_4}^{3-}$ ions at $65{\sim}95^{\circ}C$ under ambient pressure. The pore characteristic, microstructure, and compressive strength were investigated and compared for the two kinds of samples. The porosity of the samples was about 81% and 80% for HA and $Al_2O_3$, respectively with a highly interconnected network of spherical pores with size ranging from 50 to $250{\mu}m$. The porous $Al_2O_3$ sample showed much higher compressive strength(25 MPa) than the porous HA sample(10 MPa). Fairly dense and uniform HA coating(about $2{\mu}m$ thick) was deposited on the porous $Al_2O_3$ sample. Since the compressive strength of cancellous bone is $2{\sim}12$ MPa, both the porous HA and HA-coated porous $Al_2O_3$ samples could be successfully utilized as scaffolds for bone repair. Especially the latter is expected suitable for load bearing bone substitutes due to its excellent strength.

• 대한환경공학회지
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• 제27권5호
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• pp.542-548
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• 2005

부착 미생물을 이용한 다공성 담체 유동상 반응기는 하폐수중의 유기물 및 질소제거에 많이 적용되어져 왔다. 특히 생물막이 형성된 담체에서는 호기, 무산소 그리고 혐기영역이 공존하여 동시적 질산화/탈질 반응에 의한 질소제거에 유리한 환경이 제공된다고 알려져 있다. 이러한 반응을 활성화시키기 위해서는 담체표면과 내부에서 산소와 유기물등의 적절한 기질확산이 이루어져야 한다. 그러나 하폐수중의 유기물농도나 생물막의 마찰조건등 운전조건에 따라서는 표면에서의 종속영양균의 과잉성장에 의해 질소 제거 반응이 저해되기도 한다. 다공성 담체 유동상 반응기에 막모듈을 결합시킨 하이브리드 반응기는 단일조내에서 활성화된 동시적 질산화/탈질 반응으로 종래의 유동상 반응기에 비해 30% 이상 질소제거 효율이 증가하였다. 미소전극 연구를 통해 담체내부의 탈질율을 조사할 수 있으며 유동상 반응기에 비하여 하이브리드 반응기내 담체내부에서는 탈질반응에 대한 유기물의 확산에 대한 제한인자가 작으며 따라서 보다 높은 탈질율을 유지할 수 있음을 보였다.

• 전기화학회지
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• 제26권4호
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• pp.71-79
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• 2023

본 연구에서는 세공충진막 제조를 위해 활용되는 다공성 지지체의 친수화 처리를 위해서 음이온성, 양이온성, 비이온성 계면활성제를 사용하였으며, 계면활성제 종류, 농도 및 함침 시간에 따른 친수화 정도를 확인하였다. 또한 친수화 처리한 지지체를 이용하여 세공충진형 음이온교환막을 제조하고 이온전도도를 비교하여 최적의 친수화 조건을 선정하였다. 본 연구에서 사용한 이온성 계면활성제의 경우에는 함침 적용 농도가 3.0 wt% 이상일 때 함침 초기부터 다른 농도(0.05, 0.5 및 1.0 wt%)에 비해 급격하게 친수화가 진행되는 것을 관찰할 수 있었다. 그에 비해 분자량이 상대적으로 큰 비이온성 계면활성제의 경우는 친수화 진행이 원활하지 않은 것을 관찰할 수 있었다. 친수화 정도와 음이온교환막의 이온전도도와의 상관성이 나타나지 않았는데, 이러한 이유는 다공성 지지체의 친수화 공정 시 과도한 친수화 과정은 다공성 지지체의 소수 표면에 계면활성제가 과도하게 흡착하게 되어 기공률 감소가 커지게 되고 이를 통해 이온을 교환할 수 있는 고분자 전해질의 함량이 낮아지게 됨으로써 막의 전기적 저항을 크게 증가시키는 결과를 초래하게 되는 것으로 나타났다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1993년도 추계학술대회 논문집
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• pp.109-111
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• 1993

We reported the fabrication and thermal cross-linking of the LB files on porous substrates. The monolayers of the polymers which polyion-conplexed with PAA at the air-water interface can be transferred onto solid substrates such as porous fluorocarbon membrane filter and quartz crystal microbalance. The properties of the monolayers and the LB films investigated by $\pi$-A isothem, FT-IR, and SEM will be discussed. In addition, it was attempted to investigate the reaction of polymer LB films in the organic gas surrounding by the use of LB technique.