• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Transactions on Electrical and Electronic Materials
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• v.5 no.5
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• pp.194-198
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• 2004

The influences of the deep-level concentration of p-type Si substrates on the optical properties of nano-porous silicon (PS) are investigated by deep level transient spectroscopy (DLTS) and photoluminescence (PL). Utilizing a Si substrate with Fe contaminations significantly enhanced the PL intensity of PS. All the PS samples formed on Fe-contaminated silicon substrates had stronger PL yield than that of reference PS without any intentional Fe contamination but the emission peak is not significantly changed. For the PS 1000 sample with Fe contamination of 1,000 ppb, the maximum PL intensity showed about ten times stronger PL than that of the reference PS sample. From PL and DLTS results, the PL efficiency strongly depends on the Fe-related trap concentration in Si substrates.

• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.202-205
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• 2010

Nanocrystalline porous silicon surfaces have been used to detect nitroaromatic compounds in vapor phase. The mode of photoluminescence is emphasized as a sensing attitude or detection technique. Quenching of photoluminescence from nanocrystalline porous surfaces as a transduction mode is measured upon the exposure of nitroaromatic compounds. Reversible detection mode for nitroaromatics is, too, observed. To verify the detection afore-mentioned, photoluminescent freshly prepared porous silicons are functionalized with different groups. The mechanism of quenching of photoluminescence is attributed to the electron transfer behaviors of quantum-sized nano-crystallites in the porous silicon matrix to the analytes(nitroaromatics). An attempt has been done to prove that the surface-derivatized photoluminescent porous silicone surfaces can act as versatile substrates for sensing behaviors due to having a large surface area and highly sensitive transduction mode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.45-45
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• 2009

This paper describes the formation of porous 3C-SiC by anodization. 3C-SiC thin films were deposited on p-type Si(100) substrates by APCVD using HMDS (Hexamethyildisilane: $Si_2(CH_3)_6$). UV-LED(380 nm) was used as a light source. The surface morphology was observed by SEM and the pore size was increased with increase of current density. Pore diameter of 70 ~ 90 nm was achieved at 7.1 $mA/cm^2$ current density and 90 sec anodization time. FT-IR was conducted for chemical bonding of thin film and porous 3C-SiC. The Si-H bonding was observed in porous 3C-SiC around wavenumber 2100 $cm^{-1}$. PL shows the band gap enegry of thin film (2.5 eV) and porous 3C-SiC (2.7 eV).

• Journal of Photoscience
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• v.12 no.3
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• pp.171-174
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• 2005

The relationship between porous surfaces and photoluminescence (PL) behavior of porous silicon carbide (PSC) in various solvents has been studied. The porous surfaces of p-type silicon carbide can be fabricated by electrochemical anodization from the 6H, 15R, 4H-${\alpha}$-SiC substrates in dark-current mode (DCM) condition. We have been investigated the dependence of the PL spectra of PSC under the medium having the different dielectric constants. It has been found that PL depends sensitively on the environment surrounding the surface. The extent of chemically stability on the surface of PSC due to the various solvents was confirmed by reflectance Fourier transform infrared (FTIR) spectroscopy. Detailed IR experiments on the PSC samples were carried out before and after various solvents immersion. These results will be offered important information on the origin of PL in porous structure.

• Journal of the Korean Ceramic Society
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• v.45 no.10
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• pp.584-588
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• 2008

Porous hydroxyapatite(HA) and HA-coated porous $Al_2O_3$ possessing pore characteristics required for bone substitutes were prepared by a slurry foaming method combined with gelcasting. The HA coating was deposited by heating porous $Al_2O_3$ substrates in an aqueous solution containing $Ca^{2+}$ and ${PO_4}^{3-}$ ions at $65{\sim}95^{\circ}C$ under ambient pressure. The pore characteristic, microstructure, and compressive strength were investigated and compared for the two kinds of samples. The porosity of the samples was about 81% and 80% for HA and $Al_2O_3$, respectively with a highly interconnected network of spherical pores with size ranging from 50 to $250{\mu}m$. The porous $Al_2O_3$ sample showed much higher compressive strength(25 MPa) than the porous HA sample(10 MPa). Fairly dense and uniform HA coating(about $2{\mu}m$ thick) was deposited on the porous $Al_2O_3$ sample. Since the compressive strength of cancellous bone is $2{\sim}12$ MPa, both the porous HA and HA-coated porous $Al_2O_3$ samples could be successfully utilized as scaffolds for bone repair. Especially the latter is expected suitable for load bearing bone substitutes due to its excellent strength.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.5
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• pp.542-548
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• 2005

A fluidized bed reactor containing porous media has been known to be effective for nitrogen and organic matters removal in wastewater. The porous media which attached microbes plays important roles in simultaneous nitrification/denitrification (SND) due to coexistence of oxic, anaerobic and anoxic zone. For SND reaction, oxygen and organic substrates should be effectively diffused from wastewater into the intra-carrier zone. However, the overgrowth heterotrophic microbes at the surface of porous media may restrict from substrates diffusion. From these viewpoints, the existence and effect of heterotrophic bacteria at surface of porous media might be the key point for nitrogen removal. A porous media-membrane hybrid process was found to have improved nitrogen removal efficiency, due to stimulated denitrification as well as nitrification. Microelectrode studies revealed that although intra-media denitrification rate in a conventional fluidized bed was limited by organic carbon, this limitation was reduced in the hybrid process, resulting in the increased denitrification rate from 0.5 to $4.2\; mgNO_3-N/L/hr$.

• Journal of the Korean Electrochemical Society
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• v.26 no.4
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• pp.71-79
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• 2023

In this study, we employed anionic, cationic, and nonionic surfactants for the hydrophilization of porous substrates used in the fabrication of pore-filling membranes. We investigated the extent of hydrophilization based on the type of surfactant, its concentration, and immersion time. Furthermore, we used the hydrophilized substrates to produce pore-filling anion exchange membranes and compared their ion conductivity to determine the optimal hydrophilization conditions. For the ionic surfactants used in this study, we observed that hydrophilization progressed rapidly from the beginning of immersion when the applied concentration was 3.0 wt%, compared to lower concentrations (0.05, 0.5, and 1.0 wt%). In contrast, for the relatively larger molecular weight non-ionic surfactants, smooth hydrophilization was not observed. There was no apparent correlation between the degree of hydrophilization and the ion conductivity of the anion exchange membrane. This discrepancy suggests that an excessive hydrophilization process during the treatment of porous substrates leads to excessive adsorption of the surfactant on the sparse surfaces of the porous substrate, resulting in a significant reduction in porosity and subsequently decreasing the content of polymer electrolyte capable of ion exchange, thereby greatly increasing the electrical resistance of the membrane.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1993.11a
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• pp.109-111
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• 1993

We reported the fabrication and thermal cross-linking of the LB files on porous substrates. The monolayers of the polymers which polyion-conplexed with PAA at the air-water interface can be transferred onto solid substrates such as porous fluorocarbon membrane filter and quartz crystal microbalance. The properties of the monolayers and the LB films investigated by $\pi$-A isothem, FT-IR, and SEM will be discussed. In addition, it was attempted to investigate the reaction of polymer LB films in the organic gas surrounding by the use of LB technique.