• Title/Summary/Keyword: Porous silicon carbide

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Effect of Template Content on Microstructure and Flexural Strength of Porous Mullite-Bonded Silicon Carbide Ceramics (기공형성제 함량이 다공질 Mullite-Bonded SiC 세라믹스의 미세구조와 강도에 미치는 영향)

  • Choi, Young-Hoon;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.47 no.6
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    • pp.509-514
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    • 2010
  • Porous mullite-bonded SiC (MBSC) ceramics were fabricated at temperatures ranging from 1400 to $1500^{\circ}C$ for 2 h using silicon carbide (SiC), alumina ($Al_2O_3$), strontium oxide (SrO), and poly (methyl methacrylate-coethylene glycol dimethacrylate) (PMMA) microbeads. The effect of template content on porosity, pore morphology, and flexural strength were investigated. The porosity increased with increasing the template content at the same sintering temperature. The flexural strength showed maximum after sintering at $1450^{\circ}C$/2 h for all specimens due to small pores and dense strut. By controlling the template content and sintering temperature, it was possible to produce porous MBSC ceramics with porosities ranging from 30% to 54%. A maximum flexural strength of ~51MPa was obtained at 30% porosity when no template were used and specimens sintered at $1450^{\circ}C$/2 h.

Synthesis of ZSM-5 on the Surface of Foam Type Porous SiC Support (폼 형태의 다공성 탄화규소 지지체 표면 위에 ZSM-5 합성)

  • Jung, Eunjin;Lee, Yoon Joo;Won, Ji Yeon;Kim, Younghee;Kim, Soo Ryong;Shin, Dong-Geun;Lee, Hyun Jae;Kwon, Woo Teck
    • Korean Chemical Engineering Research
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    • v.53 no.4
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    • pp.425-430
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    • 2015
  • ZSM-5 crystals grew by hydrothermal synthesis method on the surface of foam type porous silicon carbide ceramics which fabricated by polymer replica method. Oxide layer was developed on the surface of the porous silicon carbide ceramics to induce growth of ZSM-5 from the surface. In this study, hydrothermal synthesis was carried out for 7 h at $150^{\circ}C$ using TEOS, $Al(NO_3){\cdot}9H_2O$ and TPAOH as raw materials in the presence of the porous silicon carbide ceramics. X-ray Powder Diffraction (XRD) and Scanning Electron Microscope (SEM) analyses were confirmed $1{\sim}3{\mu}m$ sized ZSM-5 crystals have grown on the surface of porous silicon carbide ceramics. BET data shows that small pores about $10{\AA}$ size drastically enhanced and surface area increased from $0.83m^2/g$ to $30.75m^2/g$ after ZSM-5 synthesis on the surface of foam type porous silicon carbide ceramics.

Effect of Si:C Ratio on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics (Si:C Ratio가 다공질 Self-Bonded SiC 세라믹스의 기공율과 곡강도에 미치는 영향)

  • Lim, Kwang-Young;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.45 no.5
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    • pp.285-289
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    • 2008
  • Porous self-bonded silicon carbide (SiC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, silicon (Si), and carbon (C) powders as starting materials. The effect of the Si:C ratio on porosity and strength was investigated as a function of sintering temperature. It was possible to produce self-bonded SiC ceramics with porosities ranging from 36% to 43%. The porous ceramics showed a maximal porosity when the Si:C ratio was 2:1 regardless of the sintering temperature. In contrast, the maximum strength was obtained when the ratio was 5:1.

Effect of Aluminum Addition on Porosity and Flexural Strength of Porous Self-Bonded Silicon Carbide Ceramics (알루미늄 첨가가 다공질 Self-Bonded SiC 세라믹스의 기공률과 꺾임강도에 미치는 영향)

  • Lim, Kwang-Young;Kim, Young-Wook;Woo, Sang-Kuk;Han, In-Sub
    • Journal of the Korean Ceramic Society
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    • v.46 no.5
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    • pp.520-524
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    • 2009
  • Porous self-bonded silicon carbide (SBSC) ceramics were fabricated at temperatures ranging from 1750 to $1850^{\circ}C$ using SiC, Si, C as starting materials and Al as an optional sintering additive. The effect of Al addition on the porosity and strength of the porous SBSC ceramics were investigated as functions of sintering temperature and Si:C ratio. The porosity increased with decreasing the Si:C ratio and increasing the sintering temperature. It was possible to fabricate SBSC ceramics with porosities ranging from 37% to 44% by adjusting the Si:C ratio and the sintering temperature. Addition of Al additive promoted densification and necking between SiC grains, resulting in improved strength. Typical flexural strengths of SBSC ceramics with and without Al addition were 44 MPa and 34MPa, respectively.

Fabrication of Porous Reaction Bonded Silicon Carbide with Multi-Layered Pore Structures (다층 기공구조를 갖는 다공성 반응소결 탄화규소 다공체 제조)

  • Cho, Gyoung-Sun;Kim, Gyu-Mi;Park, Sang-Whan
    • Journal of the Korean Ceramic Society
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    • v.46 no.5
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    • pp.534-539
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    • 2009
  • Reaction Bonded Silicon Carbide(RBSC) has been used for engineering ceramics due to low-temperature fabrication and near-net shape products with excellent structural properties such as thermal shock resistance, corrosion resistance and mechanical strength. Recently, attempts have been made to develop hot gas filter with gradient pore structure by RBSC to overcome weakness of commercial clay-bonded SiC filter such as low fracture toughness and low reliability. In this study a fabrication process of porous RBSC with multi-layer pore structure with gradient pore size was developed. The support layer of the RBSC with multi-layer pore structure was fabricated by conventional Si infiltration process. The intermediate and filter layers consisted of phenolic resin and fine SiC powder were prepared by dip-coating of the support RBSC in slurry of SiC and phenol resin. The temperature of $1550^{\circ}C$ to make Si left in RBSC support layer infiltrate into dip-coated layer to produce SiC by reacting with pyro-carbon from phenol resin.

Characteristics of Silicon Carbide Nanowires Synthesized on Porous Body by Carbothermal Reduction

  • Kim, Jung-Hun;Choi, Sung-Churl
    • Journal of the Korean Ceramic Society
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    • v.55 no.3
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    • pp.285-289
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    • 2018
  • We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

Bend Deformation Behavior of Silicon Carbide Reticulated Porous Ceramics

  • Zhu, Xinwen;Sakka, Yoshio;Tan, Shouhong;Jiang, Dongliang
    • Proceedings of the Korean Powder Metallurgy Institute Conference
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    • 2006.09a
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    • pp.608-609
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    • 2006
  • The deformation behavior under three-point bend test was found to depend on the loading uniformity and the macrostructure for SiC reticulated porous ceramics (RPCs). However, this dependence of loading uniformity is alleviated by improved macrostructure with fewer flaws and clogged pores. Even, this dependence becomes less important as the struts become thicker and stronger. The bend result of RPCs with highly uniform macrostructure is in excellent agreement with the GA (Gibson and Ashby) model, but the one with un-uniform macrostructure deviates from the GA model, suggesting that the macrostructure plays an important role in deformation behavior of RPCs under bend.

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Photoluminescence and Photoluminescence Excitation from Porous Silicon Carbide

  • Lee, Gi Hwan;Ying Lei Du;Lee, Tae Ho
    • Bulletin of the Korean Chemical Society
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    • v.21 no.8
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    • pp.769-773
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    • 2000
  • The dependence of photoluminescence (PL) and photoluminescence itation (PLE) on preparation condi-tions and the aging of porous silicon carbide (PSC) have been investigatted. The fiber size of the material pre-pared under dark-current mode, labele d DCM, was larger than that of the photoassisted (PA)process.The intensity of the PL spectrum for the PA condition was higher than that of the DCM condition. The PA condition giving small fiber size exhibited amore prominent high-energy component but the emission bands of both con-ditionsobserved were rather similar. The origin of the PL may have played an importantrole in the surface defect center introduced by the reaction conditions ofHFatthe surface of the silicon carbide. Selective excita-tion of the PL bandsusingdifferent excitation wavelengths has been used to identify distinct componentswith-in the PL bandwidth. Two main PL bands with peak wavelength of494 and534 nm were clearly resolved. On the other hand, selectivc emission of the PLEbands using different emission wavelengths has been used to identify distinct components within the PLE bandwidth. The higher energy band with peak wavelength of 338 nm and the lower energy bands involving 390,451 and 500 nm were clearly resolved. According to the pro-ionged aging in air, PL spectra appearedasone band, This emission probably originated from states localized to the band-to-band recombination due to the oxidation on the crystallite surface.

Effect of SiC Filler Content on Microstructure and Flexural Strength of Highly Porous SiC Ceramics Fabricated from Carbon-Filled Polysiloxane (SiC 필러 함량이 탄소 함유 Polysiloxane으로부터 제조된 고기공률 탄화규소 세라믹스의 미세조직과 꺾임강도에 미치는 영향)

  • Eom, Jung-Hye;Kim, Young-Wook;Song, In-Hyuck
    • Journal of the Korean Ceramic Society
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    • v.49 no.6
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    • pp.625-630
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    • 2012
  • Highly porous silicon carbide (SiC) ceramics were fabricated from polysiloxane, SiC and carbon black fillers, AlN-$Y_2O_3$ additives, and poly (ether-co-octene) (PEOc) and expandable microsphere templates. Powder mixtures with a fixed PEOc content (30 wt%) and varying SiC filler contents from 0-21 wt% were compression-molded. During the pyrolysis process, the polysiloxane was converted to SiOC, the PEOc generated a considerable degree of interconnected porosity, and the expandable microspheres generated fine cells. The polysiloxane-derived SiOC and carbon black reacted and synthesized nano-sized SiC with a carbothermal reduction during a heat-treatment. Subsequent sintering of the compacts in a nitrogen atmosphere produced highly porous SiC ceramics with porosities ranging from 78 % to 82 % and a flexura lstrength of up to ~7 MPa.

Effects of Amounts of Carbon Source and Infiltrated Si on the Porosity and Fracture Strength of Porous Reaction Bonded SiC (침윤된 Si 및 성형체내 Carbon Source의 양이 반응소결 탄화규소 다공체의 기공률 및 파괴강도에 미치는 영향)

  • Yun, Sung-Ho;Tan, Phung Nhut;Kim, Young-Do;Park, Sang-Whan
    • Journal of the Korean Ceramic Society
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    • v.44 no.7
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    • pp.381-386
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    • 2007
  • A porous reaction bonded silicon carbide (RBSC) was fabricated by a molten Si infiltration method. The porosity and flexural strength of porous RBSC fabricated in this study were dependent upon the amount of carbon source used in the SiC/carbon preform as well as the amount of Si infiltrated into the SiC/carbon preform. The porosity and flexural strength of porous RBSC were in the range of $20 vo1.{\sim}49 vo1.%$ and $38{\sim}61 MPa$, respectively. With increase of carbon contents and molten Si for infiltration, volume fraction of the pores was gradually decreased, and flexural strength was increased. The porous RBSCs fabricated with the same amount of molten Si show less residual Si around neck with increase of carbon source, as well as a new SiC was formed around neck which resulted in the decreased porosity and improvement of the flexural strength. In addition, decrease of the porosity and increase of the flexural strength were also obtained by increase of the amount of molten Si with the same amount of carbon source. However, it was found that the flexural strength of porous RBSC depends on the porosity rather than the amount of the newly formed SiC in neck phase between SiC particles used as a starting material.