• Macromolecular Research
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• v.14 no.1
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• pp.59-65
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• 2006

We report a new approach to fabricate electrospun polymer nonwoven mats with porous surface morphology by varying the collector temperature during electrospinning. Polymers such as poly(L-lactide) (PLLA), polystyrene (PS), and poly(vinyl acetate) (PVAc) were dissolved in volatile solvents, namely methylene chloride (Me) and tetrahydrofuran (THF), and subjected to electrospinning. The temperature of the collector in the electrospinning device was varied by a heating system. The resulting nonwoven mats were characterized by using scanning electron microscopy (SEM), field emission SEM (FESEM), and atomic force microscopy (AFM). We observed that the surface morphology, porous structure, and the properties such as pore size, depth, shape, and distribution of the nonwoven mats were greatly influenced by the collector temperature.

• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.210-214
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• 2010

Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density.

• New & Renewable Energy
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• v.2 no.2 s.6
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• pp.4-8
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient Reff lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.183-186
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• 2006

Reduction of optical losses in crystalline silicon solar cells by surface modification is one of the most important issues of silicon photovoltaics. Porous Si layers on the front surface of textured Si substrates have been investigated with the aim of improving the optical losses of the solar cells, because an anti-reflection coating and a surface passivation can be obtained simultaneously in one process. We have demonstrated the feasibility of a very efficient porous Si AR layer, prepared by a simple, cost effective, electrochemical etching method. Silicon p-type CZ (100) oriented wafers were textured by anisotropic etching in sodium carbonate solution. Then, the porous Si layer were formed by electrochemical etching in HF solutions. After that, the properties of porous Si in terms of morphology, structure and reflectance are summarized. The surface morphology of porous Si layers were investigated using SEM. The formation of a porous Si layer about $0.1{\mu}m$ thick on the textured silicon wafer result in an effective reflectance coefficient $R_{eff}$ lower than 5% in the wavelength region from 400 to 1000nm. Such a surface modification allows improving the Si solar cell characteristics.

• Bulletin of the Korean Chemical Society
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• v.31 no.6
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• pp.1459-1460
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• 2010

• Korean Journal of Materials Research
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• v.21 no.5
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• pp.268-272
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• 2011

Due to their novel properties, GaN based semiconductors and their nanostructures are promising components in a wide range of nanoscale device applications. In this work, the gallium nitride is deposited on c-axis oriented sapphire and porous SWCNT substrates by molecular beam epitaxy using a novel single source precursor of $Me_2Ga(N_3)NH_2C(CH_3)_3$ with ammonia as an additional source of nitrogen. The advantage of using a single molecular precursor is possible deposition at low substrate temperature with good crystal quality. The deposition is carried out in a substrate temperature range of 600-750$^{\circ}C$. The microstructural, structural, and optical properties of the samples were analyzed by scanning electron microscopy, X-ray diffraction, Raman spectroscopy, and photoluminescence. The results show that substrate oriented columnar-like morphology is obtained on the sapphire substrate while sword-like GaN nanorods are obtained on porous SWCNT substrates with rough facets. The crystallinity and surface morphology of the deposited GaN were influenced significantly by deposition temperature and the nature of the substrate used. The growth mechanism of GaN on sapphire as well as porous SWCNT substrates is discussed briefly.

• Particle and aerosol research
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• v.15 no.4
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• pp.183-190
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• 2019

Here, we introduce porous graphene balls (PGB) showing superior electrochemical properties as supercapacitor electrode materials. PGB was fabricated via activation of graphene oxides (GO) by H₂O₂ and aerosol spray drying in series. Effect of activation on the morphology, specific surface area, pore volume, and electrochemical properties were investigated. As-prepared PGB showed spherical morphology containing pores, which lead to the effective prevention of restacking in graphene sheets. It also exhibited a large surface area, unique porous structures, and high electrical conductivity. The electrochemical properties of the PGB as electrode materials of supercapacitor are investigated by using aqueous KOH under symmetric two-electrode system. The highest specific capacitance of PGB was 279 F/g at 0.1 A/g. In addition, the high rate capability (93.8% retention) and long-term cycling stability (92.2%) of the PGB were found due to the facilitated ion mobility between the porous graphene layers.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.242-248
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• 1997

Porous silicons were prepared by dry etching as well as by chemical etching. The latter is a conventional method used by many researchers. Meanwhile, the former is a new method we developed. Also the porous silicon structure was made by E-beam lithography technique. However, due to the limit of this technique, minimum size we could produce was about 0.3 $\mu\textrm{m}$ in diameter on silicon wafer. In a new method, the porous silicon microstructure was fabricated by using Reactive Ion Etching method after covering with diamond powder on 4 inch wafer by using spin coater. In this method, diamond powder acted as a mask. The morphology of samples prepared under many different conditions were analysed be SEM and AFM. And we measured PL spectra for the samples. Based on these results, we observed the structure of a few hundreds $\AA$ in size from porous silicon which was made by dry etching with diamond powder. Also the PL peak for these samples lied around 590 nm compared to 760 nm for chemically etched porous silicon.

• Korean Journal of Materials Research
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• v.28 no.3
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• pp.189-194
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• 2018

Porous graphites were synthesized by removing the template in HF after cabothermal conversion for 3 h at $900^{\circ}C$, accompanied by intercalations of pyrolyzed fuel oil (PFO) in the interlayer of Co or Ni loaded magadiite. The X-ray powder diffraction pattern of the porous graphites exhibited 00l reflections corresponding to a basal spacing of 0.7 nm. The particle morphology of the porous graphites was composed of carbon plates intergrown to form spherical nodules resembling rosettes like a magadiite template. TEM shows that the cross section of the porous graphites is composed of layers with very regular spaces. In particular, crystallization of the porous graphite was dependent on the content of Co or Ni loaded in the interlayer. The porous graphite had a surface area of $328-477m^2/g$. This indicates that metals such as Co and Ni act as catalysts that accelerate graphite formation.

• Journal of the Korean institute of surface engineering
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• v.53 no.6
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• pp.312-321
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• 2020

Morphology of porous cobalt electro-deposits was systematically investigated as functions of cobalt precursors in the plating bath and applied cathodic current density with a special focus on cobalt nano-rod formation. It was proved that the concentration of cobalt precursor plays little effect on the morphology of cobalt electro-deposits at relatively low plating current density while it significantly affects the morphology with increasing plating current density. Such a dependence was discussed in terms of the kinetics of two competitive reactions of cobalt reduction and hydrogen evolution. Cobalt nano-rod structure was created at specific ranges of cobalt precursor content and applied cathodic current density, and its diameter and length varied with plating time without notable formation of side branches which is usually found during dendrite formation. Specifically, the nano-rod length was preferentially increased in relative short plating time (<15 s), resulting in higher aspect ratio of nano-rod with plating time. Whereas, both the nano-rod length and diameter were increased nearly at the same level in a prolonged plating time, making the aspect ratio unchanged. From the analysis of crystal structure, it was confirmed that the cobalt nano-rod preferentially grew in the form of single crystal on a dense poly-crystalline cobalt thin film initially formed on the substrate.